Product Datasheet Search Results:

1N5551.pdf2 Pages, 263 KB, Original
1N5551
American Microsemiconductor, Inc.
3 A, 400 V, SILICON, RECTIFIER DIODE
1N5551.pdf2 Pages, 292 KB, Original
1N5551
Central Semiconductor Corp.
3 A, 400 V, SILICON, RECTIFIER DIODE
1N5551BK.pdf1 Pages, 24 KB, Scan
1N5551BK
Central Semiconductor Corp.
3 A, 400 V, SILICON, RECTIFIER DIODE
1N5551LEADFREE.pdf2 Pages, 292 KB, Original
1N5551LEADFREE
Central Semiconductor Corp.
3 A, 400 V, SILICON, RECTIFIER DIODE
1N5551TR.pdf1 Pages, 24 KB, Scan
1N5551TR
Central Semiconductor Corp.
3 A, 400 V, SILICON, RECTIFIER DIODE
1N5551TRLEADFREE.pdf1 Pages, 24 KB, Scan
1N5551TRLEADFREE
Central Semiconductor Corp.
3 A, 400 V, SILICON, RECTIFIER DIODE

Product Details Search Results:

Americanmicrosemi.com/1N5551
{"Status":"ACTIVE","Rep Pk Reverse Voltage-Max":"400 V","Application":"FAST RECOVERY","Diode Type":"RECTIFIER DIODE","Diode Element Material":"SILICON","Average Forward Current-Max":"3 A","Number of Phases":"1","Reverse Recovery Time-Max":"2 us"}...
935 Bytes - 12:48:33, 14 November 2024
Centralsemi.com/1N5551
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"400 V","Number of Phases":"1","Diode Element Material":"SILICON","Application":"GENERAL PURPOSE","Average Forward Current-Max":"3 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"100 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ELLIPTICAL","Configuration":"SINGLE","Number of Terminals":"2","...
1214 Bytes - 12:48:33, 14 November 2024
Centralsemi.com/1N5551BK
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"400 V","Number of Phases":"1","Diode Element Material":"SILICON","Application":"GENERAL PURPOSE","Average Forward Current-Max":"3 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"100 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ELLIPTICAL","Configuration":"SINGLE","Number of Terminals":"2","...
1223 Bytes - 12:48:33, 14 November 2024
Centralsemi.com/1N5551LEADFREE
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"400 V","Number of Phases":"1","Diode Element Material":"SILICON","Application":"GENERAL PURPOSE","Average Forward Current-Max":"3 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"100 A","EU RoHS Compliant":"Yes","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ELLIPTICAL","...
1313 Bytes - 12:48:33, 14 November 2024
Centralsemi.com/1N5551TR
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"400 V","Number of Phases":"1","Diode Element Material":"SILICON","Application":"GENERAL PURPOSE","Average Forward Current-Max":"3 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"100 A","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ELLIPTICAL","Configuration":"SINGLE","Number of Terminals":"2","...
1222 Bytes - 12:48:33, 14 November 2024
Centralsemi.com/1N5551TRLEADFREE
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"400 V","Number of Phases":"1","Diode Element Material":"SILICON","Application":"GENERAL PURPOSE","Average Forward Current-Max":"3 A","Case Connection":"ISOLATED","Non-rep Pk Forward Current-Max":"100 A","EU RoHS Compliant":"Yes","Terminal Position":"AXIAL","Diode Type":"RECTIFIER DIODE","Package Shape":"ELLIPTICAL","...
1321 Bytes - 12:48:33, 14 November 2024
Dla.mil/1N5551+JAN
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"100","I(O) Max.(A) Output Current":"5.0","V(FM) Max.(V) Forward Voltage":"1.2","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"400","V(RRM)(V) Rep.Pk.Rev. Voltage":"400","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Package":"SOD-61H2","I(RM) Max.(A) Pk. Rev. Current":"75u","Military":"Y","Mil Number":"JAN1N5551","Semiconductor Material":"Silicon","@Temp (°C) (Test Condition)":"55","I(RM) Max.(A) Reverse Current":"1.0u","@I(FM) (A) (Test Condition)":"9....
1038 Bytes - 12:48:33, 14 November 2024
Dla.mil/1N5551+JANS
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"100","I(O) Max.(A) Output Current":"5.0","V(FM) Max.(V) Forward Voltage":"1.2","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"400","V(RRM)(V) Rep.Pk.Rev. Voltage":"400","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Package":"SOD-61H2","I(RM) Max.(A) Pk. Rev. Current":"75u","Military":"Y","Mil Number":"JANS1N5551","Semiconductor Material":"Silicon","@Temp (°C) (Test Condition)":"55","I(RM) Max.(A) Reverse Current":"1.0u","@I(FM) (A) (Test Condition)":"9...
1044 Bytes - 12:48:33, 14 November 2024
Dla.mil/1N5551+JANTX
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"100","I(O) Max.(A) Output Current":"5.0","V(FM) Max.(V) Forward Voltage":"1.2","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"400","V(RRM)(V) Rep.Pk.Rev. Voltage":"400","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Package":"SOD-61H2","I(RM) Max.(A) Pk. Rev. Current":"75u","Military":"Y","Mil Number":"JANTX1N5551","Semiconductor Material":"Silicon","@Temp (°C) (Test Condition)":"55","I(RM) Max.(A) Reverse Current":"1.0u","@I(FM) (A) (Test Condition)":"...
1050 Bytes - 12:48:33, 14 November 2024
Dla.mil/1N5551+JANTXV
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"100","I(O) Max.(A) Output Current":"5.0","V(FM) Max.(V) Forward Voltage":"1.2","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"400","V(RRM)(V) Rep.Pk.Rev. Voltage":"400","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Package":"SOD-61H2","I(RM) Max.(A) Pk. Rev. Current":"75u","Military":"Y","Mil Number":"JANTXV1N5551","Semiconductor Material":"Silicon","@Temp (°C) (Test Condition)":"55","I(RM) Max.(A) Reverse Current":"1.0u","@I(FM) (A) (Test Condition)":...
1055 Bytes - 12:48:33, 14 November 2024
Dla.mil/1N5551US+JAN
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"400","V(RRM)(V) Rep.Pk.Rev. Voltage":"400","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JAN1N5551US","@I(R) (A) (Test Condition)":"1.0"}...
1042 Bytes - 12:48:33, 14 November 2024
Dla.mil/1N5551US+JANS
{"@Temp. (°C) (Test Condition)":"100","I(RM) Max.(A) Pk. Rev. Current":"25u","t(rr) Max.(s) Rev.Rec. Time":"2.0u","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.2","Package":"DO-213AB","I(O) Max.(A) Output Current":"3.0","I(RM) Max.(A) Reverse Current":"1.0u","@V(R) (V)(Test Condition)":"400","V(RRM)(V) Rep.Pk.Rev. Voltage":"400","Military":"Y","@I(F) (A) (Test Condition)":"500m","@I(FM) (A) (Test Condition)":"9.0","Mil Number":"JANS1N5551US","@I(R) (A) (Test Condition)":"1.0"}...
1048 Bytes - 12:48:33, 14 November 2024

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