Product Datasheet Search Results:
- 1N5465C
- Aeroflex / Metelics
- 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
- 1N5465CCO
- Aeroflex / Metelics
- 15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
- 1N5465CO
- Aeroflex / Metelics
- 15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
- 1N5465C
- Api Electronics Group
- VHF-UHF BAND, 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
- 1N5465C
- Codi Semiconductor, Inc.
- 30V Vrrm, 15pF Capacitance Varactor Diode
- 1N5465C+JAN
- Defense Electronics Supply Center
- 30V Vrrm, 15pF Capacitance Varactor Diode
- 1N5465C+JANTX
- Defense Electronics Supply Center
- 30V Vrrm, 15pF Capacitance Varactor Diode
- 1N5465C+JANTXV
- Defense Electronics Supply Center
- 30V Vrrm, 15pF Capacitance Varactor Diode
- 1N5465C
- Motorola / Freescale Semiconductor
- 30V Vrrm, 15pF Capacitance Varactor Diode
- 1N5465C
- Knox Semiconductor, Inc.
- 30V Vrrm, 15pF Capacitance Varactor Diode
- 1N5465C
- Microsemi Corp.
- 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
Product Details Search Results:
Aeroflex.com/1N5465C
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"15 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"550","Terminal Position":...
1351 Bytes - 22:32:13, 16 November 2024
Aeroflex.com/1N5465CCO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.8","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"15 pF","Diode Cap Tolerance":"2 %","Quality Factor-Min":"550","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNSP...
1225 Bytes - 22:32:13, 16 November 2024
Aeroflex.com/1N5465CO
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.8","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"15 pF","Diode Cap Tolerance":"20 %","Quality Factor-Min":"550","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNS...
1221 Bytes - 22:32:13, 16 November 2024
Apitech.com/1N5465C
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"15 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"5...
1382 Bytes - 22:32:13, 16 November 2024
Dla.mil/1N5465C+JAN
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"550","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"15p","Military":"Y","Mil Number":"JAN1N5465C","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
857 Bytes - 22:32:13, 16 November 2024
Dla.mil/1N5465C+JANTX
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"550","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"15p","Military":"Y","Mil Number":"JANTX1N5465C","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
869 Bytes - 22:32:13, 16 November 2024
Dla.mil/1N5465C+JANTXV
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"550","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"15p","Military":"Y","Mil Number":"JANTXV1N5465C","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
874 Bytes - 22:32:13, 16 November 2024
Microsemi.com/1N5465C
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.8","Package Style":"LONG FORM","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"15 pF","Power Dissipation Limit-Max":"0.4000 W","Diode Cap Tolerance":"2 %","Quality Factor-Min":"550","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND"...
1272 Bytes - 22:32:13, 16 November 2024
Various/1N5465C
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"550","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"15p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
761 Bytes - 22:32:13, 16 November 2024
Various/1N5465CCHIP
{"C1/C2 Min. Capacitance Ratio":"2.8","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"550","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"15p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
743 Bytes - 22:32:13, 16 November 2024
Documentation and Support
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