Datasheet.Directory

{"V(FM) Max.(V) Forward Voltage":"1.1","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"1.0","Package":"DO-7","I(O) Max.(A) Output Current":"100m","@Temp. (°C) (Test Condition)":"150","@t(w) (s) (Test Condition)":"10m","@V(R) (V)(Test Condition)":"380","V(RRM)(V) Rep.Pk.Rev. Voltage":"380","Military":"N","I(RM) Max.(A) Reverse Current":".25u","@I(FM) (A) (Test Condition)":"100m","I(RM) Max.(A) Pk. Rev. Current":"50u"}...

{"V(FM) Max.(V) Forward Voltage":"1.2","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"4.0k","Package":"DO-9","I(O) Max.(A) Output Current":"250","@Temp. (°C) (Test Condition)":"120","@Temp (°C) (Test Condition)":"120","@V(R) (V)(Test Condition)":"100","V(RRM)(V) Rep.Pk.Rev. Voltage":"100","Military":"N","@I(FM) (A) (Test Condition)":"250","I(RM) Max.(A) Pk. Rev. Current":"10m"}...

{"V(Z) Nom.(V) Reference Voltage":"20","Package":"Axial-6","Z(z) Max. (Ohms) Dyn. Imped.":"9.0","Tolerance (%)":"10","P(D) Max.(W) Power Dissipation":"3.0","@I(Z) (A) (Test Condition)":"40m","Military":"N"}...

{"V(Z) Nom.(V) Reference Voltage":"36","Package":"Axial-6","Z(z) Max. (Ohms) Dyn. Imped.":"21","Tolerance (%)":"10","P(D) Max.(W) Power Dissipation":"3.0","@I(Z) (A) (Test Condition)":"20m","Military":"N"}...

{"Semiconductor Material":"Silicon","Package":"DO-4","P(D) Max.(W) Power Dissipation":"20","V(RRM)(V) Rep.Pk.Rev. Voltage":"150","Ct{Cj} Nom. (F) Junction Cap.":"33p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"6.0"}...

{"Semiconductor Material":"Silicon","Package":"DO-4","P(D) Max.(W) Power Dissipation":"20","V(RRM)(V) Rep.Pk.Rev. Voltage":"120","Military":"N","@V(T){V(J)}(V)(Test Condition)":"6.0"}...

{"V(FM) Max.(V) Forward Voltage":"115","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"150","Package":"BR-6t","I(O) Max.(A) Output Current":"1.25","@Temp. (°C) (Test Condition)":"50","@Temp (°C) (Test Condition)":"40","@V(R) (V)(Test Condition)":"75k","V(RRM)(V) Rep.Pk.Rev. Voltage":"75k","Military":"N","@I(FM) (A) (Test Condition)":"1.2","I(RM) Max.(A) Pk. Rev. Current":"600u"}...

{"t(rr) Max.(s) Rev.Rec. Time":"500p","Semiconductor Material":"Silicon","V(FM) Max.(V) Forward Voltage":"1.0","Package":"DO-7","I(O) Max.(A) Output Current":"20m","@V(R) (V)(Test Condition)":"5.0","V(RRM)(V) Rep.Pk.Rev. Voltage":"12","I(RM) Max.(A) Reverse Current":"50n","Military":"N","@I(FM) (A) (Test Condition)":"20m","@I(R) (A) (Test Condition)":"20m"}...

{"V(Z) Nom.(V) Reference Voltage":"62","Package":"Axial-9","Z(z) Max. (Ohms) Dyn. Imped.":"42","Tolerance (%)":"5","P(D) Max.(W) Power Dissipation":"5.0","@I(Z) (A) (Test Condition)":"20m","Military":"N"}...

{"V(FM) Max.(V) Forward Voltage":"1.0","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"2.0","Package":"DO-7","I(O) Max.(A) Output Current":"200m","@Temp. (°C) (Test Condition)":"150","@t(w) (s) (Test Condition)":"10m","@V(R) (V)(Test Condition)":"380","V(RRM)(V) Rep.Pk.Rev. Voltage":"380","Military":"N","I(RM) Max.(A) Reverse Current":".10u","@I(FM) (A) (Test Condition)":"100m","I(RM) Max.(A) Pk. Rev. Current":"25u"}...

{"V(FM) Max.(V) Forward Voltage":"1.0","I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"2.0","Package":"DO-14","I(O) Max.(A) Output Current":"200m","@Temp. (°C) (Test Condition)":"150","@t(w) (s) (Test Condition)":"10m","@V(R) (V)(Test Condition)":"380","V(RRM)(V) Rep.Pk.Rev. Voltage":"380","Military":"N","I(RM) Max.(A) Reverse Current":"100n","@I(FM) (A) (Test Condition)":"100m","I(RM) Max.(A) Pk. Rev. Current":"10u"}...