Product Datasheet Search Results:

1N4788.pdf1 Pages, 57 KB, Scan
1N4788
Api Electronics Group
10 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1N4788A.pdf1 Pages, 57 KB, Scan
1N4788A
Api Electronics Group
10 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1N4788B.pdf1 Pages, 57 KB, Scan
1N4788B
Api Electronics Group
10 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1N4788C.pdf1 Pages, 57 KB, Scan
1N4788C
Api Electronics Group
10 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1N4788.pdf4 Pages, 258 KB, Scan
1N4788
Codi Semiconductor, Inc.
JEDEC Registered Voltage Variable Capacitor, DO-7
1N4788A.pdf4 Pages, 258 KB, Scan
1N4788A
Codi Semiconductor, Inc.
JEDEC Registered Voltage Variable Capacitor, DO-7
1N4788B.pdf4 Pages, 258 KB, Scan
1N4788B
Codi Semiconductor, Inc.
JEDEC Registered Voltage Variable Capacitor, DO-7
1N4788C.pdf2 Pages, 151 KB, Original
1N4788C
Codi Semiconductor, Inc.
Voltage-Variable Capacitance (Tuning) Diodes
1N4788D.pdf4 Pages, 258 KB, Scan
1N4788D
Codi Semiconductor, Inc.
JEDEC Registered Voltage Variable Capacitor, DO-7
1N4788.pdf2 Pages, 112 KB, Scan
1N4788
Crystalonics
Voltage Variable Capacitance Diodes Data Book 1976
1N4788.pdf1 Pages, 48 KB, Scan
1N4788
Eastron Corp.
Capacitance Varactor Diode, TO-7
1N4788A.pdf1 Pages, 48 KB, Original
1N4788A
Eastron Corp.
Voltage Variable Capacitor

Product Details Search Results:

Apitech.com/1N4788
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.17","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"20 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"15","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"RO...
1272 Bytes - 05:59:07, 17 November 2024
Apitech.com/1N4788A
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.17","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"15","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"RO...
1278 Bytes - 05:59:07, 17 November 2024
Apitech.com/1N4788B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.17","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"15","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROU...
1277 Bytes - 05:59:07, 17 November 2024
Apitech.com/1N4788C
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.17","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"15","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROU...
1277 Bytes - 05:59:07, 17 November 2024
Various/1N4788
{"C1/C2 Min. Capacitance Ratio":"2.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"25","Semiconductor Material":"Silicon","@V(Q min)(V) (Test Condition)":"4.0","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","Q Factor Min.":"15"}...
829 Bytes - 05:59:07, 17 November 2024
Various/1N4788A
{"C1/C2 Min. Capacitance Ratio":"2.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"25","Semiconductor Material":"Silicon","@V(Q min)(V) (Test Condition)":"4.0","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","Q Factor Min.":"15"}...
835 Bytes - 05:59:07, 17 November 2024
Various/1N4788B
{"C1/C2 Min. Capacitance Ratio":"2.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"25","Semiconductor Material":"Silicon","@V(Q min)(V) (Test Condition)":"4.0","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","Q Factor Min.":"15"}...
835 Bytes - 05:59:07, 17 November 2024
Various/1N4788C
{"C1/C2 Min. Capacitance Ratio":"2.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"25","Semiconductor Material":"Silicon","@V(Q min)(V) (Test Condition)":"4.0","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","Q Factor Min.":"15"}...
834 Bytes - 05:59:07, 17 November 2024
Various/1N4788D
{"C1/C2 Min. Capacitance Ratio":"2.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"25","Semiconductor Material":"Silicon","Q Factor Min.":"15","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
797 Bytes - 05:59:07, 17 November 2024

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