Product Datasheet Search Results:
1 Pages, 57 KB, Scan- 1N4788
- Api Electronics Group
- 10 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1 Pages, 57 KB, Scan- 1N4788A
- Api Electronics Group
- 10 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1 Pages, 57 KB, Scan- 1N4788B
- Api Electronics Group
- 10 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
1 Pages, 57 KB, Scan- 1N4788C
- Api Electronics Group
- 10 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
4 Pages, 258 KB, Scan- 1N4788
- Codi Semiconductor, Inc.
- JEDEC Registered Voltage Variable Capacitor, DO-7
4 Pages, 258 KB, Scan- 1N4788A
- Codi Semiconductor, Inc.
- JEDEC Registered Voltage Variable Capacitor, DO-7
4 Pages, 258 KB, Scan- 1N4788B
- Codi Semiconductor, Inc.
- JEDEC Registered Voltage Variable Capacitor, DO-7
2 Pages, 151 KB, Original- 1N4788C
- Codi Semiconductor, Inc.
- Voltage-Variable Capacitance (Tuning) Diodes
4 Pages, 258 KB, Scan- 1N4788D
- Codi Semiconductor, Inc.
- JEDEC Registered Voltage Variable Capacitor, DO-7
2 Pages, 112 KB, Scan- 1N4788
- Crystalonics
- Voltage Variable Capacitance Diodes Data Book 1976
1 Pages, 48 KB, Scan- 1N4788
- Eastron Corp.
- Capacitance Varactor Diode, TO-7
1 Pages, 48 KB, Original- 1N4788A
- Eastron Corp.
- Voltage Variable Capacitor
Product Details Search Results:
Apitech.com/1N4788
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.17","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"20 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"15","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"RO...
1272 Bytes - 22:05:56, 21 September 2024
Apitech.com/1N4788A
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.17","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"15","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"RO...
1278 Bytes - 22:05:56, 21 September 2024
Apitech.com/1N4788B
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.17","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"15","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROU...
1277 Bytes - 22:05:56, 21 September 2024
Apitech.com/1N4788C
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.17","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"10 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"15","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROU...
1277 Bytes - 22:05:56, 21 September 2024
Various/1N4788
{"C1\/C2 Min. Capacitance Ratio":"2.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"25","Semiconductor Material":"Silicon","@V(Q min)(V) (Test Condition)":"4.0","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","Q Factor Min.":"15"}...
829 Bytes - 22:05:56, 21 September 2024
Various/1N4788A
{"C1\/C2 Min. Capacitance Ratio":"2.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"25","Semiconductor Material":"Silicon","@V(Q min)(V) (Test Condition)":"4.0","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","Q Factor Min.":"15"}...
835 Bytes - 22:05:56, 21 September 2024
Various/1N4788B
{"C1\/C2 Min. Capacitance Ratio":"2.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"25","Semiconductor Material":"Silicon","@V(Q min)(V) (Test Condition)":"4.0","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","Q Factor Min.":"15"}...
835 Bytes - 22:05:56, 21 September 2024
Various/1N4788C
{"C1\/C2 Min. Capacitance Ratio":"2.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"25","Semiconductor Material":"Silicon","@V(Q min)(V) (Test Condition)":"4.0","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","Q Factor Min.":"15"}...
834 Bytes - 22:05:56, 21 September 2024
Various/1N4788D
{"C1\/C2 Min. Capacitance Ratio":"2.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"25","Semiconductor Material":"Silicon","Q Factor Min.":"15","P(D) Max.(W) Power Dissipation":"500m","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"10p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
797 Bytes - 22:05:56, 21 September 2024
