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RD12MVS1-101.pdf7 Pages, 448 KB, Original
RD12MVS1-101,T112.pdf7 Pages, 410 KB, Original

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Mitsubishichips.com/RD12MVS1-101
{"Terminal Finish":"MATTE TIN","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"50 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Pac...
1503 Bytes - 05:10:55, 05 November 2024
Mitsubishichips.com/RD12MVS1-101,T112
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"ROHS COMPLIANT PACKAGE-10","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"CHIP CARRIER","Drain Current-Max (ID)":"4 A","Transistor Application":"AMPLIFIER","Highest Frequency Band":"VERY HIGH FREQUENCY BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","T...
1462 Bytes - 05:10:55, 05 November 2024

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