Product Datasheet Search Results:

NDP4060L.pdf6 Pages, 44 KB, Original
NDP4060L
Fairchild
MOSFET N-CH 60V 15A TO-220 - NDP4060L
NDP4060LJ69Z.pdf6 Pages, 109 KB, Scan
NDP4060LJ69Z
Fairchild Semiconductor Corporation
15 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
NDP4060LS62Z.pdf6 Pages, 222 KB, Scan
NDP4060LS62Z
Fairchild Semiconductor Corporation
15 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
NDP4060L.pdf6 Pages, 186 KB, Original
NDP4060L
National Semiconductor
N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP4060L.pdf67 Pages, 163 KB, Original
NDP4060L
Toshiba
Power MOSFETs Cross Reference Guide

Product Details Search Results:

Fairchildsemi.com/NDP4060L
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Series":"-","Standard Package":"50","Supplier Device Package":"TO-220","Datasheets":"NDP4060L, NDB4060L TO220B03 Pkg Drawing","Rds On (Max) @ Id, Vgs":"80 mOhm @ 15A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"50W","Package / Case":"TO-220-3","Mounting Type":"Through Hole","Drain to Source Voltage (V...
1686 Bytes - 05:26:03, 05 November 2024
Fairchildsemi.com/NDP4060LJ69Z
{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"45 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"40 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"15 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type...
1503 Bytes - 05:26:03, 05 November 2024
Fairchildsemi.com/NDP4060LS62Z
{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"45 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"40 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"15 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type...
1509 Bytes - 05:26:03, 05 November 2024

Documentation and Support

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File NameFile Size (MB)DocumentMOQSupport
US2:SN4060L1225W.pdf5.321Request
US2:PN4060L1200CW.pdf5.321Request
US2:PN4060L1200C.pdf3.251Request
US2:SN4060L1225.pdf3.251Request
EJB34060LC.pdf5.531Request
EGB34060LC.pdf5.531Request