Datasheet.Directory

{"Terminal Finish":"TIN LEAD","Frequency Band":"VERY HIGH FREQUENCY","Terminal Form":"WIRE","Diode Cap Tolerance":"10 %","Quality Factor-Min":"200","Package Shape":"ROUND","Breakdown Voltage-Min":"12 V","Status":"ACTIVE","Package Body Material":"GLASS","Variable Capacitance Diode Classification":"HYPERABRUPT","Diode Capacitance-Nom (Cd)":"22 pF","Configuration":"SINGLE","Power Dissipation Limit-Max":"0.4000 W","Diode Element Material":"SILICON","Case Connection":"ISOLATED","Mfr Package Description":"GLASS P...

{"Terminal Finish":"TIN LEAD","Frequency Band":"VERY HIGH FREQUENCY","Terminal Form":"WIRE","Diode Cap Tolerance":"10 %","Quality Factor-Min":"200","Package Shape":"ROUND","Breakdown Voltage-Min":"12 V","Status":"ACTIVE","Package Body Material":"GLASS","Variable Capacitance Diode Classification":"HYPERABRUPT","Diode Capacitance-Nom (Cd)":"22 pF","Configuration":"SINGLE","Power Dissipation Limit-Max":"0.4000 W","Diode Element Material":"SILICON","Case Connection":"ISOLATED","Mfr Package Description":"GLASS P...

{"C1\/C2 Min. Capacitance Ratio":"9.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"12","Q Factor Min.":"200","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"1.0M","@V(C1) Min.(V)(Test Condition)":"2.0","Ct{Cj} Nom. (F) Junction Cap.":"22p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"2.0","@V(Q min)(V) (Test Condition)":"2.0"}...