Product Datasheet Search Results:

IRF840.pdf4 Pages, 95 KB, Original
IRF840
Advanced Power Electronics Corp. Usa
8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF840I.pdf5 Pages, 151 KB, Original
IRF840I
Advanced Power Electronics Corp. Usa
8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF840S.pdf4 Pages, 96 KB, Original
IRF840S
Advanced Power Electronics Corp. Usa
8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
IRF840.pdf8 Pages, 285 KB, Original
IRF840
Fairchild Semiconductor
Trans MOSFET N-CH 500V 8A 3-Pin (3+Tab) TO-220AB
IRF840A.pdf6 Pages, 151 KB, Original
IRF840AJ69Z.pdf7 Pages, 186 KB, Scan
IRF840AJ69Z
Fairchild Semiconductor Corporation
8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF840B.pdf10 Pages, 910 KB, Original
IRF840B
Fairchild
MOSFET N-CH 500V 8A TO-220 - IRF840B
IRF840BJ69Z.pdf10 Pages, 910 KB, Original
IRF840BJ69Z
Fairchild Semiconductor Corporation
8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
IRF840B_NL.pdf10 Pages, 910 KB, Original
IRF840B_NL
Fairchild Semiconductor
500V N-Channel B-FET / Substitute of IRF840 & IRF840A
IRF840S.pdf6 Pages, 152 KB, Original
IRF840.pdf4 Pages, 200 KB, Original
IRF840.pdf4 Pages, 200 KB, Original
IRF840
Frederick Components
Power MOSFET Selection Guide

Product Details Search Results:

A-power.com.tw/IRF840
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"32 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"320 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor ...
1468 Bytes - 08:53:25, 22 October 2024
A-power.com.tw/IRF840I
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"320 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V",...
1508 Bytes - 08:53:25, 22 October 2024
A-power.com.tw/IRF840S
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"320 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Tr...
1498 Bytes - 08:53:25, 22 October 2024
Fairchildsemi.com/IRF840
887 Bytes - 08:53:25, 22 October 2024
Fairchildsemi.com/IRF840AJ69Z
{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"32 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"640 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type...
1496 Bytes - 08:53:25, 22 October 2024
Fairchildsemi.com/IRF840B
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"50","Supplier Device Package":"TO-220","Datasheets":"IRF(S)840B TO220B03 Pkg Drawing","Rds On (Max) @ Id, Vgs":"800 mOhm @ 4A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"134W","Package / Case":"TO-220-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"500V","C...
1650 Bytes - 08:53:25, 22 October 2024
Fairchildsemi.com/IRF840BJ69Z
{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"32 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"320 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type...
1495 Bytes - 08:53:25, 22 October 2024
Infineon.com/IRF840PBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"8(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"500(V)","Power Dissipation":"125(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1481 Bytes - 08:53:25, 22 October 2024
Intersil.com/IRF840R
841 Bytes - 08:53:25, 22 October 2024
Irf.com/IRF840
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"8 A","Mounting":"Through Hole","Noise Figure":"Not Required dB","Drain-Source On-Volt":"500 V","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Power Dissipation":"125 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-220AB","Output Power (Max)":"Not Required W","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":...
1606 Bytes - 08:53:25, 22 October 2024
Siliconix_vishay/IRF840
771 Bytes - 08:53:25, 22 October 2024
Siliconix_vishay/IRF840APBF
795 Bytes - 08:53:25, 22 October 2024

Documentation and Support

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