Datasheet.Directory

{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"74(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail\/Tube","Power Dissipation":"200(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"74A (Tc)","Gate Charge (Qg) @ Vgs":"180nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly\/Origin":"Warehouse Transfer 29\/Jul\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"20 mOhm @ 38A, 10V","Datasheets":"IRF4905PbF","FET Type":"MOSFET P-Channel, Met...

{"Category":"MOSFET","Maximum Drain Source Voltage":"-55 V","Typical Turn-Off Delay Time":"61 ns","Description":"Value","Maximum Continuous Drain Current":"-74 A","Package":"3TO-220AB","Typical Turn-On Delay Time":"18 ns","Mounting":"Through Hole","Typical Rise Time":"99 ns","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"20@-10V mOhm","Maximum Gate Source Voltage":"\u00b120 V","Manufacturer":"International Rectifier","Typical Fall Time":"96 ns"}...