Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1.06V @ 250\u00b5A","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Gate Charge (Qg) @ Vgs":"0.7nC @ 4.5V","Product Photos":"SOT-23-3","PCN Assembly\/Origin":"SOT23 Manufacturing Source 31\/May2013 Qualification of Manufacturing Source 25\/Nov\/2013 Assembly Site Add 21\/Jul\/2015","PCN Design\/Specification":"Mold Compound 12\/Dec\/2007","Product Training Modules":"High Voltage Switches for Power Processing"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.06V @ 250\u00b5A","Series":"-","Standard Package":"10,000","Supplier Device Package":"SOT-23","Datasheets":"FDV301N Molded Pkg, SUPERSOT, 3 Lead Drawing","Rds On (Max) @ Id, Vgs":"4 Ohm @ 400mA, 4.5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"350mW","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Mounting Typ...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.2200 A","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","C...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.2200 A","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","C...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.06V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"9.5pF @ 10V","Series":"-","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Supplier Device Package":"SOT-23","Datasheets":"FDV301N Molded Pkg, SUPERSOT, 3 Lead Drawing","Rds On (Max) @ Id, Vgs":"4 Ohm @ 400mA, 4.5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"35...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.2200 A","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"REC...

{"Polarity":"N","Gate-Source Voltage (Max)":"8(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.22(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"25(V)","Packaging":"Tape and Reel","Power Dissipation":"0.35(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"8(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.22(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"25(V)","Packaging":"Tape and Reel","Power Dissipation":"0.35(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...