Product Datasheet Search Results:
4 Pages, 42 KB, Original- APT8030
- Advanced Power Technology
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
4 Pages, 42 KB, Original- APT8030B2VFR
- Advanced Power Technology
- High voltage N-Channel enhancement mode power MOSFET
4 Pages, 41 KB, Original- APT8030B2VR
- Advanced Power Technology
- High voltage N-Channel enhancement mode power MOSFET
4 Pages, 383 KB, Original- APT8030DN
- Advanced Power Technology
- APT Power MOS IV Commercial and Custom DIE
4 Pages, 45 KB, Original- APT8030JN
- Advanced Power Technology
- N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
4 Pages, 49 KB, Original- APT8030JVFR
- Advanced Power Technology
- POWER MOS V 800V 25A 0.300 Ohm
4 Pages, 48 KB, Original- APT8030JVR
- Advanced Power Technology
- High voltage N-Channel enhancement mode power MOSFET
4 Pages, 54 KB, Original- APT8030LVFR
- Advanced Power Technology
- Power MOS V
Product Details Search Results:
Advancedpower.com/APT8030CFN
{"Absolute Max. Power Diss. (W)":"595","Package":"F-Pack SIP","V(BR)DSS (V)":"800","Circuits Per Package":"1","I(D) Abs. Drain Current (A)":"29","r(DS)on Max. (Ohms)":"300m"}...
720 Bytes - 02:43:42, 06 October 2024
Advancedpower.com/APT8030DN
{"@V(DS) (V) (Test Condition)":"1k","Package":"Chip","I(DSS) Max. (A)":"250u","I(GSS) Max. (A)":"100n","V(BR)DSS (V)":"800","@I(D) (A) (Test Condition)":"1","Military":"N","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"300m","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2"}...
796 Bytes - 02:43:42, 06 October 2024
Advancedpower.com/APT8030FN
{"C(iss) Max. (F)":"6.3n","Absolute Max. Power Diss. (W)":"595","V(BR)DSS (V)":"800","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"120n","r(DS)on Max. (Ohms)":"300m","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"14.5","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"F-Pack SIP","Military":"N","td(on) Max (s) On time delay":"30n","I(DSS) Max. (A)":"250u","@(VDS) (V) (Test Condition)":"30","t(r) Max. (s) Rise time":"60n","Thermal Resistance Junc-Amb.":"20...
1136 Bytes - 02:43:42, 06 October 2024
Advancedpower.com/APT8030HBEN
{"Absolute Max. Power Diss. (W)":"400","Package":"Module-s\/q","V(BR)DSS (V)":"800","Circuits Per Package":"1","I(D) Abs. Drain Current (A)":"23.5","r(DS)on Max. (Ohms)":"300m"}...
728 Bytes - 02:43:42, 06 October 2024
Advancedpower.com/APT8030JNFR
{"@V(DS) (V) (Test Condition)":"25","C(iss) Max. (F)":"11n","t(r) Max. (s) Rise time":"25n","@Freq. (Hz) (Test Condition)":"1.0M","Absolute Max. Power Diss. (W)":"520","I(GSS) Max. (A)":"100n","V(BR)DSS (V)":"800","Circuits Per Package":"1","V(BR)GSS (V)":"20","t(f) Max. (s) Fall time.":"25n","I(D) Abs. Drain Current (A)":"27","Package":"SOT-227B","@V(GS) (V) (Test Condition)":"20","t(d)off Max. (s) Off time":"140n","r(DS)on Max. (Ohms)":"300m"}...
976 Bytes - 02:43:42, 06 October 2024
Advancedpower.com/APT8030SAEN
{"Absolute Max. Power Diss. (W)":"400","Package":"Module-s","V(BR)DSS (V)":"800","Circuits Per Package":"1","I(D) Abs. Drain Current (A)":"23.5","r(DS)on Max. (Ohms)":"300m"}...
724 Bytes - 02:43:42, 06 October 2024
Microchip.com/APT8030B2VRG
1072 Bytes - 02:43:42, 06 October 2024
Microsemi.com/APT8030B2VFR
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1517 Bytes - 02:43:42, 06 October 2024
Microsemi.com/APT8030B2VFRG
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHA...
1576 Bytes - 02:43:42, 06 October 2024
Microsemi.com/APT8030B2VR
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1499 Bytes - 02:43:42, 06 October 2024
Microsemi.com/APT8030B2VRG
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHA...
1560 Bytes - 02:43:42, 06 October 2024
Microsemi.com/APT8030JVFR
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"UNSPECIFIED","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"25 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"100 A","Channel Type":"N-CHAN...
1539 Bytes - 02:43:42, 06 October 2024
