Datasheet.Directory

{"V(RWM) (V) Work.Pk.Rev.Voltage":"21.8","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"39.1","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"29.7","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"27","V(BR) Min.(V)Breakdown Voltage":"24.3","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"38.5","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"23.1","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"27.5","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"28.4","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"27","V(BR) Min.(V)Breakdown Voltage":"25.7","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"40","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...