Datasheet.Directory

{"V(RWM) (V) Work.Pk.Rev.Voltage":"202","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"360","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"275","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"250","V(BR) Min.(V)Breakdown Voltage":"225","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"5.0","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"214","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"344","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"267","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"250","V(BR) Min.(V)Breakdown Voltage":"237","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"5.0","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"202","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"360","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"275","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"250","V(BR) Min.(V)Breakdown Voltage":"225","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"5.0","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...

{"V(RWM) (V) Work.Pk.Rev.Voltage":"214","Semiconductor Material":"Silicon","V(C) Nom. (V) Clamping Voltage":"344","Package":"DO-201","V(BR) Max.(V)Breakdown Voltage":"267","P(D) Max.(W) Power Dissipation":"5.0","V(BR) Nom.(V)Rev.Break.Voltage":"250","V(BR) Min.(V)Breakdown Voltage":"237","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(R) (A) (Test Condition)":"1.0m","@I(PP) (A) (Test Condition)":"5.0","P(PP) Max.(W) Peak Pulse Power":"1.5k"}...