Product Datasheet Search Results:
4 Pages, 348 KB, Scan- 3SK225
- Toshiba America Electronic Components, Inc.
- UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
4 Pages, 110 KB, Scan- 3SK225TE85L
- Toshiba America Electronic Components, Inc.
- UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
4 Pages, 110 KB, Scan- 3SK225TE85R
- Toshiba America Electronic Components, Inc.
- UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
Product Details Search Results:
Toshiba.co.jp/3SK225
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"19 dB","Drain Current-Max (ID)":"0.0300 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"13.5 V","Transistor Application":"AMPLIFIER","Surf...
1565 Bytes - 17:57:19, 05 October 2024
Toshiba.co.jp/3SK225TE85L
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"19 dB","Drain Current-Max (ID)":"0.0300 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"13.5 V","Transistor Application":"AMPLIFIER","Surface M...
1541 Bytes - 17:57:19, 05 October 2024
Toshiba.co.jp/3SK225TE85R
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Power Gain-Min (Gp)":"19 dB","Drain Current-Max (ID)":"0.0300 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"13.5 V","Transistor Application":"AMPLIFIER","Surface M...
1542 Bytes - 17:57:19, 05 October 2024
