Product Datasheet Search Results:

2N6851TX.pdf5 Pages, 167 KB, Scan
2N6851TX
International Rectifier
4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6851TXV.pdf5 Pages, 167 KB, Scan
2N6851TXV
International Rectifier
4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
2N6851TX.pdf1 Pages, 31 KB, Original
2N6851TX
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
2N6851TXV.pdf1 Pages, 31 KB, Original
2N6851TXV
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.

Product Details Search Results:

Irf.com/2N6851TX
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"DISCONTINUED","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1428 Bytes - 06:16:12, 28 September 2024
Irf.com/2N6851TXV
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"DISCONTINUED","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1433 Bytes - 06:16:12, 28 September 2024