Product Datasheet Search Results:
- 2N6851TX
- International Rectifier
- 4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
- 2N6851TXV
- International Rectifier
- 4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
Product Details Search Results:
Irf.com/2N6851TX
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"DISCONTINUED","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1428 Bytes - 06:16:12, 28 September 2024
Irf.com/2N6851TXV
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"DISCONTINUED","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1433 Bytes - 06:16:12, 28 September 2024