CMT2N7002E SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is Low On-Resistance: 3 produced using high cell density, DMOS technology. These Low Threshold: 2V (typ.) products have been designed to minimize on-state Low Input Capacitance: 25pF resistance while provide rugged, reliable, and fast switching Fast Switching Speed: 7.5ns performance. This product is particularly suited for low Low Input and Output Leakage voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION SYMBOL SOT-23 D Top View 1 G SOURCE DRAIN GATE 3 S 2 N-Channel MOSFET ORDERING INFORMATION Part Number Package CMT2N7002E SOT-23 CMT2N7002EG* *Note: G : Suffix for Pb Free Product SOT-23 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 V Drain-Gate Voltage (RGS = 1.0M) VDGR 60 V Continuous Drain Current (TJ = 150) TA = 25 TA = 70
CMT2N7002E SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is ! Low On-Resistance: 3 produced using high cell density, DMOS technology. These ! Low Threshold: 2V (typ.) products have been designed to minimize on-state ! Low Input Capacitance: 25pF resistance while provide rugged, reliable, and fast switching ! Fast Switching Speed: 7.5ns performance. This product is particularly suited for low ! Low Input and Output Leakage voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION SYMBOL SOT-23 D Top View 1 G SOURCE DRAIN GATE 3 S 2 N-Channel MOSFET ORDERING INFORMATION Part Number Package CMT2N7002E SOT-23 ABSOLUTE MAXIMUM RATINGS Rating Drain Source Voltage Drain-Gate Voltage (RGS = 1.0M) Continuous Drain Current (TJ = 150) Symbol Value Unit VDSS 60 V 60 V VDGR TA = 25 TA = 70 ID 240 190 mA Pulsed Drain Current (Note 1) IDM 1300 mA Gate-