CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state resistance Rugged and Reliable while provide rugged, reliable, and fast switching performance. High Saturation Current Capability It can be used in most applications requiring up to 115mA DC and can deliver pulsed currents up to 800mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION SYMBOL SOT-23, SOT-323 SOT-363 Top View Top View D2 G1 D S1 1 G SOURCE DRAIN GATE 3 S2 2 G2 S D1 N-Channel MOSFET ORDERING INFORMATION Part Number Package CMT2N7002 SOT-23 CMT2N7002G* SOT-23 CMT2N7002WG* SOT-323 CMT2N7002DWG* S
CMT2N7002E SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is Low On-Resistance: 3 produced using high cell density, DMOS technology. These Low Threshold: 2V (typ.) products have been designed to minimize on-state Low Input Capacitance: 25pF resistance while provide rugged, reliable, and fast switching Fast Switching Speed: 7.5ns performance. This product is particularly suited for low Low Input and Output Leakage voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION SYMBOL SOT-23 D Top View 1 G SOURCE DRAIN GATE 3 S 2 N-Channel MOSFET ORDERING INFORMATION Part Number Package CMT2N7002E SOT-23 CMT2N7002EG* *Note: G : Suffix for Pb Free Product SOT-23 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 V Drain-Gate Voltage (RGS = 1.0M) VDGR 60 V Continuous Drain Current (TJ = 150) TA = 25 TA = 70
CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state resistance Rugged and Reliable while provide rugged, reliable, and fast switching performance. High Saturation Current Capability It can be used in most applications requiring up to 115mA DC and can deliver pulsed currents up to 800mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION SYMBOL SOT-23, SOT-323 SOT-363 Top View Top View D2 G1 D S1 1 G SOURCE DRAIN GATE 3 S2 2 G2 S D1 N-Channel MOSFET ORDERING INFORMATION Part Number Package CMT2N7002 SOT-23 CMT2N7002G* SOT-23 CMT2N7002WG* SOT-323 CMT2N7002DWG* S
CMT2N7002K SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state resistance Rugged and Reliable while provide rugged, reliable, and fast switching and ESD High Saturation Current Capability enhanced performance. It can be used in most applications ESD Protected 2KV HBM requiring up to 115mA DC and can deliver pulsed currents up to 800mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION SYMBOL SOT-23 TOP View SOURCE DRAIN GATE 3 N-Channel MOSFET 2 1 ORDERING INFORMATION Part Number Package CMT2N7002K SOT-23 CMT2N7002KX* SOT-23 *Note: X : Suffix for Halogen Free Product ABSOLUTE MAXIMUM RATINGS Ra
CMT2N7002K SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state resistance Rugged and Reliable while provide rugged, reliable, and fast switching and ESD High Saturation Current Capability enhanced performance. It can be used in most applications ESD Protected 2KV HBM requiring up to 115mA DC and can deliver pulsed currents up to 800mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION SYMBOL SOT-23 TOP View SOURCE DRAIN GATE 3 N-Channel MOSFET 2 1 ORDERING INFORMATION Part Number Package CMT2N7002K SOT-23 CMT2N7002KX* SOT-23 *Note: X : Suffix for Halogen Free Product ABSOLUTE MAXIMUM RATINGS Ra
CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is ! High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These ! Voltage Controlled Small Signal Switch products have been designed to minimize on-state ! Rugged and Reliable resistance while provide rugged, reliable, and fast switching ! High Saturation Current Capability performance. It can be used in most applications requiring up to 115mA DC and can deliver pulsed currents up to 800mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION SYMBOL SOT-23 D Top View 1 G SOURCE DRAIN GATE 3 S 2 N-Channel MOSFET ORDERING INFORMATION Part Number Package CMT2N7002 SOT-23 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 V Drain-Gate Voltage (RGS = 1.0M) VDGR 60 V mA Drai
CMT2N7002 Formosa MS SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state Rugged and Reliable resistance while provide rugged, reliable, and fast switching High Saturation Current Capability performance. It can be used in most applications requiring up to 115mA DC and can deliver pulsed currents up to 800mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION SYMBOL SOT-23 D Top View 1 G SOURCE DRAIN GATE 3 S 2 N-Channel MOSFET ORDERING INFORMATION Part Number Package CMT2N7002 SOT-23 CMT2N7002G* *Note: G : Suffix for Pb Free Product SOT-23 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain S
CMT2N7002E SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is ! Low On-Resistance: 3 produced using high cell density, DMOS technology. These ! Low Threshold: 2V (typ.) products have been designed to minimize on-state ! Low Input Capacitance: 25pF resistance while provide rugged, reliable, and fast switching ! Fast Switching Speed: 7.5ns performance. This product is particularly suited for low ! Low Input and Output Leakage voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION SYMBOL SOT-23 D Top View 1 G SOURCE DRAIN GATE 3 S 2 N-Channel MOSFET ORDERING INFORMATION Part Number Package CMT2N7002E SOT-23 ABSOLUTE MAXIMUM RATINGS Rating Drain Source Voltage Drain-Gate Voltage (RGS = 1.0M) Continuous Drain Current (TJ = 150) Symbol Value Unit VDSS 60 V 60 V VDGR TA = 25 TA = 70 ID 240 190 mA Pulsed Drain Current (Note 1) IDM 1300 mA Gate-
CMT2N7002AG SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor High Density Cell Design for Low RDS(ON) is produced using high cell density, DMOS technology. Voltage Controlled Small Signal Switch These products have been designed to minimize Rugged and Reliable on-state resistance while provide rugged, reliable, and High Saturation Current Capability fast switching performance. It can be used in most Built-in G-S Protection Diode applications requiring up to 115mA DC and can deliver pulsed currents up to 800mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION SYMBOL SOT-23 Top View 1 SOURCE DRAIN GATE 3 2 N-Channel MOSFET ORDERING INFORMATION Part Number CMT2N7002AG Package SOT-23 *Note: G : Suffix for Pb Free Product 2007/07/18 Rev. 1.0 Champion Microelectronic Corporation Page 1 CM
-220, TO-220FP 6 28 SOP-08 -5.3 90 SOP-08 -4.5 90 SOP-08 LOW VOLTAGE DUAL N-CHANNEL CMT9926 20 LOW VOLTAGE DUAL P-CHANNEL CMT4953 -30 LOW VOLTAGE SINGLE P-CHANNEL CMT9435 30 LOW POWER SINGLE N-CHANNEL CMT2302 20 2.8 85 SOT-23-3 CMT2304 30 2.5 117 SOT-23-3 CMT2N7002 60 0.115 7.5 SOT-23-3 CMT2N7002W 60 0.115 7.5 SOT-323 LOW POWER SINGLE P-CHANNEL CMT2301 -20 -2.3 13 SOT-23-3 CMT2303 -30 -1.7 24 SOT-23-3 ~11~ Schottky Barrier Diodes 8.0AM P Schottky Barrier Diodes Part # SR820 SR830 SR840 SR850 SR860 SR880 SR8100 10.0AMP Schottky Part # SR1020 SR1030 SR1040 SR1050 SR1060 SR1080 SR10100 SR10150 SR10200 16.0AMP Schottky Part # SR1620 SR1630 SR1640 SR1650 SR1660 SR1680 SR16100 SR16150 SR16200 20.0AMP Schottky Part # SR2020 SR2030 SR2040 SR2050 SR2060 SR2080 SR20100 SR20150 SR20200 30.0AMP Schottky Part # SR3020 SR3030 SR3040 SR3050 SR3060 SR3080 SR30100 PIV (V) 20 30 40 50 60 80 100 Barrier Diodes PIV (V) 20 30 40 50 60 80 100 150 200 Barrier Diodes PIV (V) 20 30 40 50 60 80 100 150 200 Ba