BC328 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (PNP) Features TO-226AA (TO-92) * PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. * These types are also available subdivided into three groups, -16, -25, and -40, according to their DC current gain. As complementary types, the NPN transistors BC327 and BC338 are recommended. * On special request, these transistors are also manufactured in the pin configuration TO-18. 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Mechanical Data max. 0.022 (0.55) 0.098 (2.5) Dimensions in inches and (millimeters) Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk - 5K per container, 20K/box E7/4K per Ammo mag., 20K/box Bottom View Maximum Ratings & Thermal Characteristics Parameter Ratings at 25C ambient temperature unless otherwise specified. Symbol Value Unit Collecto

BC328 BC327 / BC328 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren fur universellen Einsatz PNP PNP Version 2006-05-30 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Mae [mm] 625 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. - Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) BC327 BC328 Collector-Emitter-volt. - Kollektor-Emitter-Spannung E-B short - VCES 50 V 30 V Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open - VCEO 45 V 25 V Emitter-Base-voltage - Emitter-Basis-Spannung C open - VEBO 5V Power dissipation - Verlustleistung Ptot 625 mW 1) Collector current - Kollektorstrom (dc) - IC 800 mA Peak Collector current - Kollektor-Spitzenstrom - ICM 1A Base current - Basisst

BC328-16/25/40 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features * x x x * * * PNP Plastic-Encapsulate Transistors Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Capable of 0.625Watts of Power Dissipation. Collector-current : -0.8A Collector-base Voltage :VCBO=-50V(BC327) , VCBO=-30V(BC328) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Halogen free available upon request by adding suffix "-HF" TO-92 Maximum Ratings x Operating temperature : -55 to +150 x A E Storage temperature : -55 to +150 Electrical Characteristics @ 25 Unless Otherwise Specified Symbol Parameter Min Max Units --- Vdc B OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO Collector-Emitter Breakdown Voltage (IC=-10mAdc, IB=0) BC327 BC328 Collector-Base Breakdown Voltage (IC=-100Adc, IE=0) BC327 BC328 Collector-Emitter Breakdown Voltage (IE=-10Adc, IC=0) Collector

KSA733 KSA733 KSA733 KSA733 KSA733 KSA733 KSA733 KSA733 KSA733 KSA733 KSC945 KSC945 KSC945 KSC945 KSA733 KSA703 KSC945 BC307 BC307B BC308 BC308A BC308C BC309 BC309C KSA733 KSC945 KSC945 BC318C KSC945 KSA733 KSA733 BC327 BC327-16 Industry BC327-25 BC327A BC328 BC328-25 BC330 BC332 BC333 BC334 BC335 BC336 BC337 BC337-16 BC337-25 BC337A BC338 BC340 BC341 BC342 BC343 BC347 BC348 BC349 BC350 BC351 BC352 BC358 BC360 BC361 BC368 BC369 BC381 BC382 BC383 BC384 BC385 BC386 BC395 BC396 BC407 BC408 BC409 BC417 BC418 BC419 BC437 BC438 BC439 BC451 BC452 BC453 BC454 BC456 BC467 BC468 BC469 BC512 BC513 BC514 BC516 BC517 Fairchild Closest Equivalent Industry BC327-25 BC327A BC328 BC328-25 KSC945 KSC945 KSC945 KSA733 KSC945 KSA733 BC337 BC337-16 BC337-25 BC337A BC338 KSC1008 KSC1008 KSC1008 KSA708 KSC945 KSC945 KSC945 KSA733 KSA733 KSA733 KSA708 KSA708 KSD261 BC368 BC369 KSC945 KSC945 KSC945 KSC945 KSC945 KSC945 KSC1008 KSA708 KSC945 KSC945 KSC945 KSA733 KSA733 KSA733 KS

200 200 100m 100m 100m 100m 100m 100m -.7 800m 1.0 25 25 25 25 25 25 25 25 25 200 200 214 220 220 220 240 240 240 25 25 25 25 25 25 250 250 250 250 250 250 1.0 2.0 800m 100m 700m 1.0 100m 100m 100m m 100m 100m 100m 200m 500m 500m 70 80 fT BCX18R BC328 BC328-18 BC328-5 BC328L BCS08 BCS08-16 A5T3638A MPS3638AK 65 75 Ic Max (A) 100 100 100 100 100 100 100 100 100 100 1 100 100 100 100 100 100 100 100 100 40 50 hFE BC308B BC308B18 BC308B5 BC309B BC309B18 BC309B5 2SB810 2SA1298 2SB564 2SB1119R 2SB1121R TEC9012J BC308P 2SB81OJ 2SB811J BC158B BC158B BC158B 2SA550 2SA550 2SA550 2SA677 BCS08-40 TBC328A Cobo Max ( ICBO Max (A) V(BR)C80 Po Max (W) Derate at (WrC Toper 5.0m 2.0m 1.5m 150 J 175 125 J Max eC) Package Style >= 20 V, (Cont'd) 35 45 Y(BR)CEO ecsnc Sanyo Elect Sanyo Elect ToshibaCorp FerrantiLtd NECElecslnc NECElecslnc Semi Ltd NthAmerSemi Bharat e n ex Advncd Semi Semi Inc Elec Trans Solid Stlnc See Index Indust

BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren fur universellen Einsatz PNP PNP Version 2010-06-23 Power dissipation Verlustleistung 0.1 CBE min 12.5 4.6 0.1 4.6 2 x 1.27 625 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. - Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Special packaging bulk Sonder-Lieferform Schuttgut Dimensions - Mae [mm] Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) BC327 BC328 Collector-Emitter-volt. - Kollektor-Emitter-Spannung E-B short - VCES 50 V 30 V Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open - VCEO 45 V 25 V Emitter-Base-voltage - Emitter-Basis-Spannung C open - VEBO 5V Power dissipation - Verlustleistung Ptot 625 mW 1) Collector current - Kollektorstrom (dc) - IC 800 mA Peak Collector current - Kollektor-Spitzenstrom - ICM 1A Base current - Basi

BC328-16/25/40 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Capable of 0.625Watts of Power Dissipation. Collector-current : -0.8A Collector-base Voltage :VCBO=-50V(BC327) , VCBO=-30V(BC328) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 PNP Plastic-Encapsulate Transistors TO-92 Maximum Ratings x x A Operating temperature : -55 to +150 Storage temperature : -55 to +150 E Electrical Characteristics @ 25 Unless Otherwise Specified Symbol Parameter Min Max Units --- Vdc --- Vdc --- Vdc B OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO Collector-Emitter Breakdown Voltage (IC=-10mAdc, IB=0) BC327 BC328 Collector-Base Breakdown Voltage (IC=-100Adc, IE=0) BC327 BC328 Collector-Emitter Breakdown Voltage (IE=-10Adc, IC=0) Collector Cutoff Current (VCB=-45Vdc,IE=0) BC327 (VCB=-25Vdc,IE=0) BC328 Collector Cutoff Current BC327 (VCE=-40Vdc,IB=0) (V

BC328 1 TO-92 1. Collector 2. Base 3. Emitter Ordering Information Part Number Top Mark Package Packing Method BC33716BU BC33716 TO-92 3L Bulk BC33716TA BC33716 TO-92 3L Ammo BC33716TFR BC33716 TO-92 3L Tape and Reel BC33725BU BC33725 TO-92 3L Bulk BC33725TA BC33725 TO-92 3L Ammo BC33725TAR BC33725 TO-92 3L Ammo BC33725TF BC33725 TO-92 3L Tape and Reel BC33725TFR BC33725 TO-92 3L Tape and Reel BC33740BU BC33740 TO-92 3L Bulk BC33740TA BC33740 TO-92 3L Ammo BC33825TA BC33825 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol

PE NUMBER DESCRIPTION PAGE 2N5400; 2N5401 NPN high-voltage transistors x 2N5550; 2N5551 NPN high-voltage transistors x 2N7000 N-channel enhancement mode vertical D-MOS transistor x 2N7002 N-channel vertical D-MOS transistor x BC327; BC327A; BC328 PNP general purpose transistors x BC337; BC337A; BC338 NPN general purpose transistors x BC546; BC547; BC548 NPN general purpose transistors x BC556; BC557; BC558 PNP general purpose transistors x BC846; BC847; BC848 NPN general purpose transistors x BC856; BC857;BC857 PNP general purpose transistors x BR211 series Breakover diodes x BS107 N-channel enhancement mode vertical D-MOS transistor x BS107A N-channel enhancement mode vertical D-MOS transistor x BS108 N-channel enhancement mode vertical D-MOS transistor x BS170 N-channel vertical D-MOS transistor x BSN10; BSN10A N-channel enhancement mode vertical D-MOS transistor x BSN20 N-channel enhancement mode vertical D-MOS transistor x BSN254; BSN254A

ject to all applicable copyright laws and is not for resale in any manner. BC337 / BC338 NPN Epitaxial Silicon Transistor Features * Switching and Amplifier Applications * Suitable for AF-Driver Stages and Low-Power Output Stages * Complement to BC327 / BC328 TO-92 12 3 Straight Lead Bulk Packing 1 2 1. Collector 2. Base 3. Emitter 3 Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number Top Mark Package Packing Method BC33716BU BC33716 TO-92 3L Bulk BC33716TA BC33716 TO-92 3L Ammo BC33716TFR BC33716 TO-92 3L Tape and Reel BC33725BU BC33725 TO-92 3L Bulk BC33725TA BC33725 TO-92 3L Ammo BC33725TAR BC33725 TO-92 3L Ammo BC33725TF BC33725 TO-92 3L Tape and Reel BC33725TFR BC33725 TO-92 3L Tape and Reel BC33740BU BC33740 TO-92 3L Bulk BC33740TA BC33740 TO-92 3L Ammo BC33825TA BC33825 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera

BC328 Small Signal Transistors (PNP) TO-92 FEATURES .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suit-able for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the NPN transistors BC337 and BC338 are recommended. max. .022 (0.55) On special request, these transistors are also .098 (2.5) manufactured in the pin configuration TO-18. E C MECHANICAL DATA B Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Value Unit Collector-Emitter Voltage BC327 BC328 -VCES -VCES 50 30 V V Collector-Emitter Voltage BC327 BC328 -VCEO -VCEO 45 25 V V Emitter-Base Voltage -

er applications. Especially suited for AF-driver stages and low power output stages. * These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the PNP transistors BC327 and BC328 are recommended. * On special request, this transistor is also manufactured in the pin configuration TO-18. 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) max. 0.022 (0.55) Mechanical Data 0.098 (2.5) Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk - 5K per container E7/4K per Ammo tape Dimensions in inches and (millimeters) Bottom View Maximum Ratings & Thermal Characteristics Parameters Ratings at 25C ambient temperature unless otherwise specified. Symbols Value Units Collector-Emitter Voltage BC337 BC338 VCES 50 30 V Collector-Emitter Voltage BC337 BC338 VCEO 45 25 V VEBO 5 V IC 800 mA ICM 1 A IB 100 Emitter-Base Voltage Collector Current Peak Collector Curre

ter 2 base 3 collector * General purpose switching and amplification, e.g. driver and output stages of audio amplifiers. handbook, halfpage1 DESCRIPTION 3 2 3 2 NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC327, BC327A and BC328. 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS - 50 V BC337A - 60 V - 30 V BC337 - 45 V BC337A - 60 V BC338 - 25 V - 1 A - 625 mW BC337; BC338 100 600 BC337A 100 400 100 - collector-emitter voltage open base peak collector current Ptot total power dissipation Tamb 25 C hFE DC current gain IC = 100 mA; VCE = 1 V 1997 Mar 10 UNIT open emitter ICM fT MAX. BC337 BC338 VCEO MIN. transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 2 MHz Philips Semiconductors Product specification NPN general purpose transistors BC337; BC337A; BC338 LIMITING VALUES In accordance with the Absolute Ma

BC328 VISHAY Vishay Semiconductors Small Signal Transistors (PNP) Features * PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. * These types are also available subdivided into three groups, -16, -25, and -40, according to their DC current gain. As complementary types, the NPN transistors BC337 and BC338 are recommended. C 1 2 B 18979 1 2 3 E 3 Mechanical Data Case: TO-92 Plastic Package Weight: approx. 177 mg Packaging Codes/Options: BULK / 5 k per container 20 k/box TAP / 4 k per Ammopack 20 k/box Parts Table Part Type differentiation Ordering code Remarks BC327-16 hFE, typ. 160 @ 100 mA BC327-16-BULK or BC327-16-TAP Bulk / Ammopack BC327-25 hFE, typ. 250 @ 100 mA BC327-25-BULK or BC327-25-TAP Bulk / Ammopack BC327-40 hFE, typ. 400 @ 100 mA BC327-40-BULK or BC327-40-TAP Bulk / Ammopack BC328-16 hFE, typ. 130 @ 300 mA BC328-16-BULK or

BC328 BC327 ... BC328 IC = -800 mA hFE ~ 160/250/400 Tjmax = 150C General Purpose PNP Transistors Universal-PNP-Transistoren VCEO = -25 ... -45 V Ptot = 625 mW Version 2018-02-02 (1) 18 9 16 C BE Typische Anwendungen Signalverarbeitung, Schalten, Verstarken Standardausfuhrung 1) Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Besonderheiten Universell anwendbar Drei Stromverstarkungsklassen Konform zu RoHS, REACH, Konfliktmineralien 1) RoHS Pb EE WE 2 x 2.54 Typical Applications Signal processing, Switching, Amplification Commercial grade 1) EL V TO-92 (10D3) Mechanical Data 1) 0.1 (2) CBE min 12.5 4.60.1 4.6 2 x 1.27 Mechanische Daten 1) (1) Taped in ammo pack (Raster 2.54) (2) On request: in bulk (Raster 1.27, suffix "BK") 4000 (1) Gegurtet in Ammo-Pack (Raster 2.54) (2) Auf Anfrage: Schuttgut (Raster 1.27, Suffix "BK") 5000 Weight approx. 0.18 g Gewicht ca. Case material UL 94V-0 Gehausematerial

NS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified) PARAMETER SYMBOL Collector-emitter voltage : BC327 : BC328 Collector-emitter voltage : BC327 : BC328 Emitter-base voltage Collector current (DC) Collector dissipation Junction Temperature Storage Temperature RATING UNIT -50 -30 V V -45 -25 -5 -800 625 150 -55 ~ +150 V V V mA mW C C VCES VCEO VEBO Ic Pc Tj TSTG ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-emitter breakdown voltage : BC327 : BC328 Collector-emitter breakdown voltage : BC327 : BC328 Emitter-base breakdown voltage Collector Cut-off Current : BC327 : BC328 DC current gain BVCEO Ic=-10mA, IB=0 Collector-emitter saturation voltage UTC BVCES BVEBO ICES hFE1 hFE2 VCE(sat) MIN TYP MAX UNIT -45 -25 V V

BC328. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Emitter Current IE -800 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT - - 100 nA Collector Cut-off Current ICBO VCB=25V, IE=0 DC Current Gain (Note) hFE VCE=1V, IC=100mA 100 - 630 Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.7 V Base-Emitter Voltage VBE(ON) VCE=1V, IC=300mA - - 1.2 V Transition Frequency fT VCE=5V, IC=-10mA, f=100MHz - 100 - MHz VCB=10V, f=1MHz, IE=0 - 12 - pF Cob Collector Output Capacitance Note : hFE Classification none:100630, 2000. 2. 28 16:100250, Revision No : 2 25:160400, 40:250630 1/2 BC338 2000. 2. 28 Revision No

BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B BC547,A,B,C BC548,A,B,C BC549B,C BC550B,C BC556,A,B BC557,A,B,C BC558B BC559B,C BC560B,C BC618 BC639 BC640 BC807-16,25,40 BC817-16,25,40 BC846AL,BL BC847AL,BL,CL BC848AL,BL,CL BC856AL,BL BC857AL,BL BC858AL,BL,CL BCY58-VIII BCY59-VIII,IX GROUP CASE SECT-4 SECT-4 SECT-4 SECT-4 SECT-4 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 SECT-2 CASE-389 CASE-389 CASE-389 CASE-389 CASE-389 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-206 TO-206 TO-206 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-226 TO-236 TO-236

BC328 PNP General Purpose Transistor COLLECTOR P b Lead(Pb)-Free 1 TO-92 2 BASE 1 3 2 EMITTER 3 Maximum Ratings(TA=25C unless otherwise noted) Symbol BC327 BC328 Unit Collector-Base voltage VCBO -50 -30 V Collector-Emitter voltage VCEO -45 -25 V Emitter-Base voltage VEBO -5.0 -5.0 V Rating Collector Current Continuous lC 800 mA Total Device Dissipation Alumina Substrate,TA=25C PD 625 mW/C Operating Junction Temperature Range TJ -55 to +150 C Tstg -55 to +150 C Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max BC327 BC328 V(BR)CBO -50 -30 - - BC327 BC328 V(BR)CEO -45 -25 - - BC327 BC328 V(BR)EBO -5.0 - - Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC=-100A, IE=0 Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 Emitter-Base Breakdown Voltage IC=-10A, IC=0 WEITRON http://www.weitron.com.tw 1/4 V V Vdc 29-Jun-06 B

BC328

BC328,-16,-25 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC327 BC328 Unit Collector - Emitter Voltage VCEO -45 -25 Vdc Collector - Base Voltage VCBO -50 -30 Vdc Emitter - Base Voltage VEBO -5.0 Vdc Collector Current -- Continuous IC -800 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg - 55 to +150 C Symbol Max Unit Operating and Storage Junction Temperature Range 3 CASE 29-04, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max -45 -25 -- -- -- -- -50 -30 -- -- -- -- -5.0 -- -- -- -- -- -- -100 -100 -- -- -- -- -100 -100 -- -- -100 Unit OFF CHARACTERISTICS Collector - Emi

N3906U 2N5400 2N5400S 2N5401 2N5401C 2N5401S 2N5550 2N5550S 2N5551 2N5551C 2N5551S B5A45VI B5A45VIC B5A60VI B5A60VIC B5A90VI B10A45VI B10A45VIC B10A60VIC B10A90VIC B15A45VIC B15A60VIC B20A45VIC B20A60VIC B30A45VIC BC237 BC238 BC239 BC307 BC308 BC309 BC327 BC328 BC337 BC338 BC517 BC546 BC547 BC548 BC549 BC550 BC556 BC557 BC558 BC559 BC560 BC637 BC638 BC807 BC817 BC846 BC846W BC847 BC847W BC848 BC848W BC849 BC850 BC856 BC856W BC857 BC857W BC858 BC858W BC859 BC860 BCV71 BCV72 BCW29 BCW30 Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Tr

-03W BBY51-02W BBY51 BBY52-03W BBY52-02W BBY52 BBY53-03W BBY53-02W BBY53 4 BB669 BB689 BB837 BB857 BBY5302V BBY56-03W BBY56-02W BB644 BB664 BBY55-03W BBY55-02W BBY5502V BBY57-03W BBY57-02W BBY5702V BBY58-03W BBY58-02W BBY5802V BC807 BC807W BC328 BC808 BC808W BC337 BC817 BC817W BC338 BC818 BC818W BC368 BCX68 2000-09-01 BC369 BC516 BCV26 BCV46 SMBTA63/ 64 BCP68 BCX69 BCP69 BCV28 BCV48 BCP28 BCP48 Cross Reference BC327 Data Book Leaded Devices SMD-Packages SOD-323 SCD-80 SOT-23 SOT-143 SOT-323 SOT-343 SOT-363 SCT-595 SOT-89 SOT-223 BCV29 BCP29 PZTA14 SC-75 BC517 BCV27 BC546 BC846 BC846W BC846S/PN BC846T BC547 BC847 BC847W BC847S BC847BT BC847T BC548 BC848 BC848W BC848T BC549 BC849 BC849W BC849T BC550 BC850 BC850W BC850T BC556 BC856 BC856W BC856S BC557 BC857 BC857W BC857S/PN BC558 BC858 BC858W BC857BT BC559 BC859 BC859W BC560 BC860 BC860W BC617 BCV47 SMBTA13 BCV29 BCP49 PZTA13 BC618 BCV47 BCV49 BCP49

-30 V JC327 - -45 V JC327A - -60 V JC328 - -25 V - -1 A - 625 mW 100 600 collector-emitter voltage open base peak collector current Ptot total power dissipation Tamb 25 C hFE DC current gain IC = -100 mA; VCE = -1 V BC327; BC328 BC327A 1997 Mar 10 MAX. open emitter ICM fT MIN. transition frequency IC = -10 mA; VCE = -5 V; f = 100 MHz 2 100 400 80 - MHz Philips Semiconductors Product specification PNP general purpose transistors JC327; JC327A; JC328 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter JC327 - -50 V JC327A - -60 V JC328 - -30 V JC327 - -45 V JC327A - -60 V JC328 - -25 V - -5 V collector-emitter voltage open base; IC = -10 mA VEBO emitter-base voltage IC collector current (DC) - -500 mA ICM peak collector current - -1 A IBM peak base current - -200 mA open collec

BC328 Unit Collector - Emitter Voltage VCEO -45 -25 Vdc Collector - Base Voltage VCBO -50 -30 Vdc Emitter - Base Voltage VEBO -5.0 Vdc Collector Current -- Continuous IC -800 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg - 55 to +150 C Symbol Max Unit Operating and Storage Junction Temperature Range 3 CASE 29-04, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Typ Max -45 -25 -- -- -- -- -50 -30 -- -- -- -- -5.0 -- -- -- -- -- -- -100 -100 -- -- -- -- -100 -100 -- -- -100 Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = -10 mA, IB = 0) Collector - Emitter Breakdown Voltage (IC = -100 A, IE = 0)

d low power output stages. 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) * These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the PNP transistors BC327 and BC328 are recommended. * On special request, this transistor is also manufactured in the pin configuration TO-18. Mechanical Data Case: TO-92 Plastic Package max. 0.022 (0.55) Weight: approx. 0.18g 0.098 (2.5) Dimensions in inches and (millimeters) Packaging Codes/Options: E6/Bulk - 5K per container, 20K/box E7/4K per Ammo mag., 20K/box Bottom View Maximum Ratings & Thermal Characteristics Parameter Ratings at 25C ambient temperature unless otherwise specified. Symbol Value Unit Collector-Emitter Voltage BC337 BC338 VCES 50 30 V Collector-Emitter Voltage BC337 BC338 VCEO 45 25 V VEBO 5 V IC 800 mA ICM 1 A IB 100 Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation at Tamb

BC328. N E K G J D MAXIMUM RATING (Ta=25) UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Emitter Current IE -800 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range H F F 1 2 3 C RATING MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M SYMBOL L CHARACTERISTIC DIM A B C D E F G H J K L M N 1. COLLECTOR 2. BASE 3. EMITTER TO-92 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT - - 100 nA Collector Cut-off Current ICBO VCB=25V, IE=0 DC Current Gain (Note) hFE VCE=1V, IC=100mA 100 - 630 Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.7 V Base-Emitter Voltage VBE(ON) VCE=1V, IC=300mA - - 1.2 V Transition Frequency fT VCE=5V, IC=-10mA, f=100MHz - 100

68-07 BAT68W BAT68-04W BAT68-05W BAT68-06W BAT68-07W BAW101 BB512 BB804 BB419 BB515 BB619C Semiconductor Group BB439 BB535 BB639C BB555 BB659C 3 1998-11-01 Cross Reference Leaded Devices SMD-Packages SOD-123 BB419 BB620 BB512 BC182 BC212 BC327 BC328 BC337 BC338 BC368 BC369 BC516 BC517 BC546 BC547 BC548 BC549 BC550 BC556 BC557 BC558 Semiconductor Group SOD-323 BB439 BB640 SCD-80 BB545 BBY51-03W BBY52-03W BBY53-03W BB669 BB837 BBY56-03W BB644 BBY55-03W BBY57-03W BBY58-03W BB565 BBY51-02W BBY52-02W BBY53-02W BB689 BB857 BBY56-02W BB664 BBY55-02W BBY57-02W BBY58-02W SOT-23 SOT143 SOT-323 SOT-343 SOT-363 SCT-595 SOT-89 SOT-223 BCX68 BCX69 BCV28 BCV48 BCP68 BCP69 BCP28 BCP48 PZTA63/64 BCP29 PZTA14 BBY51 BBY52 BBY53 SMBT6428/ 29 SMBT5086/ 87 BC807 BC808 BC817 BC818 BC807W BC808W BC817W BC818W BCV26 BCV46 SMBTA63/64 BCV27 SMBT6427 BC846 BC847 BC848 BC849 BC850 BC856 BC857 BC858 BCV29 BC846W BC847W BC848W BC849W BC850W BC856W BC857W BC858W 4 BC846S / PN BC847S BC856S BC

BC328 Small Signal Transistors (PNP) Features TO-226AA (TO-92) * PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. * These types are also available subdivided into three groups, -16, -25, and -40, according to their DC current gain. As complementary types, the NPN transistors BC327 and BC338 are recommended. * On special request, these transistors are also manufactured in the pin configuration TO-18. 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Mechanical Data max. 0.022 (0.55) 0.098 (2.5) Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk - 5K per container E7/4K per Ammo tape Dimensions in inches and (millimeters) Bottom View Maximum Ratings & Thermal Characteristics Parameters Ratings at 25C ambient temperature unless otherwise specified. Symbols Value Units Collector-Emitter Voltage BC327 BC328 -VCES 50 30 V Collecto

100 400 100 BC327A 244 BC337-16 TO-92 45 500 625 100 250 100 BC327-16 244 BC337-25 TO-92 45 500 625 160 400 100 BC327-25 244 BC337-40 TO-92 45 500 625 250 600 100 BC327-40 244 BC338 TO-92 25 500 625 100 600 100 BC328 244 BC338-16 TO-92 25 500 625 100 250 100 BC328-16 244 BC338-25 TO-92 25 500 625 160 400 100 BC328-25 244 BC338-40 TO-92 25 500 625 250 600 100 BC328-40 244 BC546 TO-92 65 100 500 110 450 100 BC556 261 BC546A TO-92 65 100 500 110 220 100 BC556A 261 BC546B TO-92 65 100 500 200 450 100 BC556B 261 BC547 TO-92 45 100 500 110 800 100 BC557 261 1997 Jul 21 2

S2222A 2N4401 2N4400 MPS6602 2N3903 2N3904 BC548 BC548A BC548B BC548C 2N4123 2N4124 BC338 MPS8599 MPSA56 -- BC556 BC556B MPSA55 MPS2907A BC212 BC307B BC327 BC557 BC557A BC557B BC557C MPSA70 -- 2N4403 2N4402 MPS6652 2N3905 2N3906 -- -- BC558B -- 2N4125 -- BC328 80 80 80 65 65 60 60 50 45 45 45 45 45 45 40 40 40 40 40 40 40 30 30 30 30 30 25 25 150 100 60 150 150 100 200 200(1) 150 210(1) 150 150 150 150 125 300 200 150 100 200 250 300(1) 300(1) 300(1) 300 200 250 210(1) (1) Typical Devices listed in bold, italic are Motorola preferred devices. Selector Guide 1-2 Motorola Small-Signal Transistors, FETs and Diodes Device Data Plastic-Encapsulated Transistors (continued) Table 1. Plastic-Encapsulated General-Purpose Transistors (continued) NPN PNP V(BR)CEO Volts Min fT @ IC MHz Min hFE @ IC VCE(sat) @ IC @ IB mA IC A Max Min Max mA Volts Max mA mA Style 200 200 200 200 0.5 0.5 0.5 0.5 40 40 80 80 400 400 -- -- 100 100 50 50 0.7 0.7 0.5 0.4 1000 1000 250 250 100 100 10

er stages and low power output stages * Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC327 : BC328 Value Units -50 -30 V V -45 -25 V V Collector-Emitter Voltage : BC327 : BC328 VCEO VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC327 : BC328 Test Condition IC= -10mA, IB=0 Collector-Emitter Breakdown Voltage : BC327 : BC328 IC= -0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE= -10A, IC=0 ICES Collector Cut-off Current : BC327 : BC328 VCE= -45V, VBE=0 VCE= -25V, VBE=0 BVCES hFE1 hFE2 Min. Typ. VCE= -1V

uivalent type BC107/108/109 Discontinued BC140/141 Discontinued BC160/161 Discontinued BC177/A/B Discontinued BC237 Replaced by BC547B BC237B Replaced by BC547B BC307 Replaced by BC557B BC307B Replaced by BC557B BC327A Replaced by BC327 BC328 Replaced by BC327 BC328-16 Replaced by BC327-16 BC328-25 Replaced by BC327-25 BC328-40 BC327-40 1999 Jun 23 72 equivalent type Philips Semiconductors Small-signal Transistors DISCONTINUED TYPE Replacement list REASON FOR DELETION BC337A BC337 BC338 BC337 BC338-16 BC337-16 BC338-25 BC337-25 BC338-40 BC337-40 BC368-16 BC635-16 BC368-25 BC635-16 BC547A BC546A BC548 BC547 BC548A BC546A BC548B BC547B BC548C BC547C BC549 BC547B BC549B BC547B BC550 BC547B BC550B BC547B BC557A BC556A BC558 BC557 BC558A BC556A BC558B BC557B BC558C BC557C BC559 BC557 BC559A BC556A BC559B BC556B BC560 BC557 BC560B BC556B BC560C BC557C BC617 BC618 BC635-10

BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC337 : BC338 Value Units 50 30 V V 45 25 V V Collector-Emitter Voltage : BC337 : BC338 VCEO VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC337 : BC338 Test Condition IC=10mA, IB=0 Collector-Emitter Breakdown Voltage : BC337 : BC338 IC=0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 ICES Collector Cut-off Current : BC337 : BC338 VCE=45V, IB=0 VCE=25V, IB=0 BVCES Min. Typ. Max. Units 45 25 V V 50 30 V V 5 V 2 2 100 60 100 100 nA nA 630 hFE1 hFE2 DC Current Gain VCE=1V, IC=100mA VCE=1V, IC=300mA VCE (sat

BC328 TO-92 12 3 Straight Lead Bulk Packing 1 2 1. Collector 2. Base 3. Emitter 3 Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number Top Mark Package Packing Method BC33716BU BC33716 TO-92 3L Bulk BC33716TA BC33716 TO-92 3L Ammo BC33716TFR BC33716 TO-92 3L Tape and Reel BC33725BU BC33725 TO-92 3L Bulk BC33725TA BC33725 TO-92 3L Ammo BC33725TAR BC33725 TO-92 3L Ammo BC33725TF BC33725 TO-92 3L Tape and Reel BC33725TFR BC33725 TO-92 3L Tape and Reel BC33740BU BC33740 TO-92 3L Bulk BC33740TA BC33740 TO-92 3L Ammo BC33825TA BC33825 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are

BC328 Unit Collector - Emitter Voltage VCEO -45 -25 Vdc Collector - Base Voltage VCBO -50 -30 Vdc Emitter - Base Voltage VEBO -5.0 Vdc Collector Current -- Continuous IC -800 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg - 55 to +150 C Symbol Max Unit Operating and Storage Junction Temperature Range 3 CASE 29-04, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max -45 -25 -- -- -- -- -50 -30 -- -- -- -- -5.0 -- -- -- -- -- -- -100 -100 -- -- -- -- -100 -100 -- -- -100 Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = -10 mA, IB = 0) Collector - Emitter Breakdown Voltage (IC = -100 A, IE = 0)

Lot- und Einbaubedingungen MSL N/A Dimensions - Mae [mm] Current gain groups Stromverstarkungsgruppen BC337-16 BC337-25 BC337-40 Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren BC338-16 BC338-25 BC338-40 BC327 ... BC328 Maximum ratings 2) Grenzwerte 2) BC337 BC338 Collector-Emitter-volt. - Kollektor-Emitter-Spannung E-B short VCES 50 V 30 V Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO 45 V 25 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 5V Power dissipation - Verlustleistung Ptot 625 mW 3) Collector current - Kollektorstrom (dc) IC 800 mA Peak Collector current - Kollektor-Spitzenstrom ICM 1A Base current - Basisstrom IB 100 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C 1 2 3 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf u

237 BC547B BC556B BC556B BC237A BC547B BC557 BC557 BC237B BC547B BC557A BC556A BC307 BC557B BC557B BC557B BC307B BC557B BC557C BC557C BC327 BC327 BC558B BC557B BC327-16 BC327-16 BC559B BC556B BC327-25 BC327-25 BC559C BC559C BC328 BC327 BC560C BC557C BC328-16 BC327-16 BC618 BC618 BC328-25 BC327-25 BC635 BC635 BC337 BC337 BC636 BC636 BC337-16 BC337-16 BC637 BC637 BC337-25 BC337-25 BC638 BC640-16 BC337-40 BC337-40 BC639 BC639 BC338 BC337 BC640 BC640 BC338-16 BC337-16 BC807-16LT1 BC807-16 BC338-25 BC337-25 BC807-25 BC807-25 BC338-40 BC337-40 BC807-25LT1 BC807-25 BC368 BC368 BC807-40 BC807-40 BC369 BC369 BC807-40LT1 BC807-40 BC373 BC618 BC808-16W BC807-16W BC489A MPSA06 BC817-16LT1 BC817-16 BC490A MPSA56 BC817-25 BC817-25 BC517 BC517 BC817-25LT1 BC817-25 BC546 BC546 BC817-40 BC817-40 BC546B BC546B BC817-40LT1 BC817-40 BC547 BC547 BC818-16W BC817-16W BC547A BC546A

BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC337 : BC338 Value Units 50 30 V V 45 25 V V Collector-Emitter Voltage : BC337 : BC338 VCEO VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC337 : BC338 Test Condition IC=10mA, IB=0 Collector-Emitter Breakdown Voltage : BC337 : BC338 IC=0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 ICES Collector Cut-off Current : BC337 : BC338 VCE=45V, IB=0 VCE=25V, IB=0 BVCES Min. Typ. Max. Units 45 25 V V 50 30 V V 5 V 2 2 100 60 100 100 nA nA 630 hFE1 hFE2 DC Current Gain VCE=1V, IC=100mA VCE=1V, IC=300mA VCE (sat

er stages and low power output stages * Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC327 : BC328 Value Units -50 -30 V V -45 -25 V V Collector-Emitter Voltage : BC327 : BC328 VCEO VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC327 : BC328 Test Condition IC= -10mA, IB=0 Collector-Emitter Breakdown Voltage : BC327 : BC328 IC= -0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE= -10A, IC=0 ICES Collector Cut-off Current : BC327 : BC328 VCE= -45V, VBE=0 VCE= -25V, VBE=0 BVCES hFE1 hFE2 Min. Typ. VCE= -1V

er stages and low power output stages * Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC327 : BC328 Value Units -50 -30 V V -45 -25 V V Collector-Emitter Voltage : BC327 : BC328 VCEO VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -800 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC327 : BC328 Test Condition IC= -10mA, IB=0 Collector-Emitter Breakdown Voltage : BC327 : BC328 IC= -0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE= -10A, IC=0 ICES Collector Cut-off Current : BC307 : BC338 VCE= -45V, VBE=0 VCE= -25V, VBE=0 BVCES hFE1 hFE2 Min. Typ. VCE= -1V, IC= -100mA VCE= -

PITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 * Suitable for AF-Driver stages and low power output stages * Complement to BC337/BC338 ABSOLUTE MAXIMUM RATINGS (TA=25C) Characteristic Symbol Collector-Emitter Voltage : BC327 : BC328 Collector-Emitter Voltage : BC327 : BC328 Emitter-Base Voltage Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Rating Unit -50 -30 V V -45 -25 -5 -800 625 150 -55 ~ 150 V V V mA mW C C VCES VCEO VEBO IC PC TJ T STG 1. Collector 2. Base 3. Emitter ELECTRICAL CHARACTERISTICS (TA=25C) Characteristic Collector Emitter Breakdown Voltage : BC327 : BC328 Collector Emitter Breakdown Voltage : BC327 : BC328 Emitter Base Breakdown Voltage Collector Cut-off Current : BC307 : BC338 DC Current Gain Symbol BVCEO BVCES BVEBO ICES Test Conditions Min Typ Max Unit IC= -10mA, IB=0 -45 -25 V V -50 -30 -5 V V V IC= -0.1mA, IB=0 IE= -10mA, IC=0 Collector-Emit

BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=-800mA. DC Current Gain : hFE=100630 (VCE=-1V, Ic=-100mA). For Complementary with NPN type BC338. N E K G J D MAXIMUM RATING (Ta=25) UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -800 mA Emitter Current IE 800 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range H F F 1 2 3 C RATING MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M SYMBOL L CHARACTERISTIC DIM A B C D E F G H J K L M N 1. COLLECTOR 2. BASE 3. EMITTER TO-92 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT - - -100 nA Collector Cut-off Current ICBO VCB=-25V, IE=0 DC Current Gain (Note) hF

applications. Especially suited for AF-driver stages and low power output stages. * These types are also available subdivided into three groups - 16, - 25, and - 40, according to their DC current gain. As complementary types, the PNP transistors BC327 and BC328 are recommended. 2 B 1 2 3 E 3 18855_1 Mechanical Data Case: TO-92 Plastic case Weight: approx. 177 mg Packaging Codes/Options: BULK / 5 k per container 20 k/box TAP / 4 k per Ammopack 20 k/box Parts Table Part Type differentiation Ordering code Remarks BC337-16 hFE, 160 @ 100 mA BC337-16-BULK or BC337-16-TAP Bulk / Ammopack BC337-25 hFE, 250 @ 100 mA BC337-25-BULK or BC337-25-TAP Bulk / Ammopack BC337-40 hFE, 400 @ 100 mA BC337-40-BULK or BC337-40-TAP Bulk / Ammopack BC338-16 hFE, 130 @ 300 mA BC338-16-BULK or BC338-16-TAP Bulk / Ammopack BC338-25 hFE, 200 @ 300 mA BC338-25-BULK or BC338-25-TAP Bulk / Ammopack BC338-40 hFE, 320 @ 300 mA BC338-40-BULK or BC338-40-TAP Bulk / Ammopack Absolute Maximum Rating

338 SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package Complementary Transistors For Use in Driver And Output Stages of Audio Amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise) DESCRIPTION SYMBOL BC327 BC337 BC327A BC337A BC328 BC338 UNITS 45 50 60 60 25 30 V V Collector Emitter Voltage Collector Emitter Voltage VCEO Emitter Base Voltage VEBO 5.0 V IC 800 mA ICM 1.0 A IE M 1.0 A Base Current Continuous IB 100 mA Base Current Peak IBM 200 mA Power Dissipation @ Ta=25C Derate Above 25C PTA 625 5 mW mW/C Tj, Tstg -65 to +150 C Rth(j-a) 200 C/W VCES Collector Current Continuous Peak Emitter Current Peak Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Ambient in Free Air Continental Device India Limited Data Sheet Page 1 of 4 SILICON PLANAR EPITAXIAL TRANSISTORS BC337 BC337A BC338 TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL TEST C

BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC337 : BC338 Value Units 50 30 V V 45 25 V V Collector-Emitter Voltage : BC337 : BC338 VCEO VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC337 : BC338 Test Condition IC=10mA, IB=0 Collector-Emitter Breakdown Voltage : BC337 : BC338 IC=0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 ICES Collector Cut-off Current : BC337 : BC338 VCE=45V, IB=0 VCE=25V, IB=0 BVCES Min. Typ. Max. Units 45 25 V V 50 30 V V 5 V 2 2 100 60 100 100 nA nA 630 hFE1 hFE2 DC Current Gain VCE=1V, IC=100mA VCE=1V, IC=300mA VCE (sat

or-Basis-Kapazitat VCB = 10 V, IE =ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft < 200 K/W 1) RthA Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren BC327 / BC328 Available current gain groups per type Lieferbare Stromverstarkungsgruppen pro Typ BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338-40 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature ) 1 Verlustleistung in Abh. von d. Umgebungstemp. ) 1 2 1 2 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG

0A BC817W BC818W 2 PZTA06 Philips Semiconductors Product specification Small-signal transistors Conversion list LEADED METAL PACKAGE SURFACE-MOUNT TO-92 SC-59 SOT23 SOT143 SOT323 SOT363 SC-75 SOT223 General purpose medium power PNP BC327 BC328 JC327 JC328 MPSA55 MPSA56 2PB710A BC807 BC808 BCX17 BCX18 PMBTA56 PMSTA56 2PB1219A BC807W BC808W PZTA56 Note 1. NPN/PNP device. Darlingtons LEADED METAL PACKAGE TO-92 SURFACE-MOUNT TO-126 SOT23 SOT323 BDX42 BDX43 BDX44 BCV27 BCV47 PMBTA13 PMBTA14 PMBT6428 PMST6428 BDX45 BDX46 BDX47 BCV26 BCV46 PMBTA63 PMBTA64 BSS63 SOT89 SOT223 Darlingtons NPN BSS50 BSS51 BSS52 BC517 BC617 BC618 MPSA13 MPSA14 MPSA25 MPSA26 MPSA27 BC875 BC877 BC879 BSR50 BSR51 BSR52 BCV29 BCV49 PXTA14 PXTA27 BST50 BST51 BST52 BCP49 PZTA14 BSP50 BSP51 BSP52 BST60 BST61 BST62 BCV28 BCV48 PXTA64 BSP60 BSP61 BSP62 PZTA63 PZTA64 Darlingtons PNP BSS61 BSS62 1997 Aug 06 BC876 BC878 BC880 BSR60 BSR61 BSR62 BC516 MPSA63 MPSA64 BSS68 3 Philips Semiconducto

5 0.3 70 400 1 50 0.6 300 30 2N3702 25 40 5 0.5 60 300 5 50 0.25 50 5 2N6076 25 25 5 0.5 100 500 10 10 0.25 10 1 MPS6523 25 45 4 0.5 300 600 10 2 0.5 50 5 MPS3702 25 40 5 0.8 60 300 5 50 0.25 50 5 BC328 25 30 5 0.8 100 630 1 100 0.7 500 50 PN3638 25 25 4 0.8 30 - 1 50 1 300 30 PN3638A 25 25 4 0.8 100 - 1 50 1 300 30 KSB564A 25 30 5 1 70 400 1 100 0.5 1000 100 MPS6562 25 25 5 1 50 200 1 500 0.5 500 50 SS8550 25 40 6 1.5 85 300 1 100 0.5 800 80 BC558 30 30 5 0.1 110 800 5 2 0.65 100 5 BC559 30 30 5 0.1 110 800 5 2 0.65 100 5 PN4917 30 30 5 0.2 150 300 1 10 0.3 50 5 2N4125 30 30 4 0.2 50 150 1 2 0.4 50 5 2N3703 30 50 5 0.5 30 150 5 50 0.25 50 5 PN5138 30 30 5 0.5 50 800 10 0 0.3 10 0.5 MPS3703 30 50 5 0.8 30 150 5 50 0.25 50 5 BC213L 30 45 5 500 80 400 5 2 0.6 100 10 BC214L 3

BC328 BC328-16/25/40 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features x x x Capable of 0.625Watts of Power Dissipation. Collector-current : -0.8A Collector-base Voltage :VCBO=-50V(BC327) , VCBO=-30V(BC328) x Case Material: Molded Plastic. Classification Rating 94V-0 UL Flammability PNP Plastic-Encapsulate Transistors Maximum Ratings x x Operating temperature : -55 to +150 Storage temperature : -55 to +150 TO-92 A E Electrical Characteristics @ 25 Unless Otherwise Specified Symbol Parameter Min Max Units --- Vdc OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO Collector-Emitter Breakdown Voltage (IC=-10mAdc, IB=0) BC327 BC328 Collector-Base Breakdown Voltage (IC=-100Adc, IE=0) BC327 BC328 Collector-Emitter Breakdown Voltage (IE=-10Adc, IC=0) Collector Cutoff Current (VCB=-45Vdc,IE=0) BC327 (VCB=-25Vdc,IE=0) BC328 Collector Cutoff Current BC327 (VCE=-40Vdc,IB=0) (VCE=-20Vdc,IB

4 RB5 RB6 RB7 RB1 RB0 R12 15k Vcc R13 5.6k MCLR PIC16F84A S3 Reset GND RB2 RA0 RA4 OSC OSC RA2 RA1 RA3 ZD1 3V3 BC338 T2 R10 2.7k RB3 Q1 10MHz R8 47k R17 15k D4 D3 R5 R3 R6 220k 1.5k 1.5k S1 Ground Connection Left key S2 Right key T4 BC328 R19 62 R15 15k R14 15k ZD2 6V8 D8 D7 R18 2.7k D1 Probe Input D5 R16 15k D6 C3 27 pF D12 LED 5 Charge T5 BC328 D2 C2 27 pF D10 T3 BC338 R9 47k NiCd 4 x 1.2V 180 mAh LCD module LM032L may be controlled in 4-bit parallel mode, which is used in this project. That is why pins 7-10 of the LCD are not used. routine in the highest rate must rotate PORTA bits in a single instruction and perform bit transfers from the input pin to the STATUS,C flag. LEDs L, H and P share the same outputs with the LCD data bus. The only consequence is that some very minor and short LED flashing is visible while the PICmicro MCU is accessing the LCD (mostly when some key is pressed). RB0 also has two functions. It controls the Enable

VLWLRQ )UHTXHQF\ ,QWHUQDO 'LDJUDP 3 & : 9&(2 9 ,& $ +)( 9&( 9 ,& P$ 9&( VDW 9 ,& P$ ,% P$ fT(MHz) 1 -25 -1.5 120-200 -1 -100 -0.5 -800 -80 100 Fig.2 8550SS-D TO-92 PNP 1 -25 -1.5 160-300 -1 -100 -0.5 -800 -80 100 Fig.2 BC328-16 TO-92 PNP 0.625 -25 -0.8 100-250 -1 -100 -0.7 -500 -50 260 Fig.2 BC328-25 TO-92 PNP 0.625 -25 -0.8 160-400 -1 -100 -0.7 -500 -50 260 Fig.2 BC328-40 TO-92 PNP 0.625 -25 -0.8 250-630 -1 -100 -0.7 -500 -50 260 Fig.2 M8550-B TO-92 PNP 0.625 -25 0.8 80-160 -1 -100 -0.5 -800 -80 150 Fig.2 M8550-C TO-92 PNP 0.625 -25 0.8 120-200 -1 -100 -0.5 -800 -80 150 Fig.2 M8550-D TO-92 PNP 0.625 -25 0.8 160-300 -1 -100 -0.5 -800 -80 150 Fig.2 MPS3702 TO-92 PNP 0.625 -25 -0.8 60-300 -5 -50 -0.25 -50 -5 100 Fig.2 S8550-B TO-92 PNP 0.625 -25 -0.5 85-150 -1 -50 -0.6 -500 -50 100 Fig.2 S8550-C TO-92 PNP 0.625 -25 -0.5

applications. Especially suitable for AF-driver stages and low power output stages. These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the PNP transistors BC327 and BC328 are recommended. max. .022 (0.55) On special request, these transistors are also .098 (2.5) manufactured in the pin configuration TO-18. E C MECHANICAL DATA B Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Value Unit Collector-Emitter Voltage BC337 BC338 VCES VCES 50 30 V V Collector-Emitter Voltage BC337 BC338 VCEO VCEO 45 25 V V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Peak Collector Current ICM 1 A Base Current IB 100 mA Power Dissipation at Tamb = 25 C Ptot 6251) mW Junction Temperature Tj 150 C Storage Temperat

er stages and low power output stages * Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC327 : BC328 Value Units -50 -30 V V -45 -25 V V Collector-Emitter Voltage : BC327 : BC328 VCEO VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC327 : BC328 Test Condition IC= -10mA, IB=0 Collector-Emitter Breakdown Voltage : BC327 : BC328 IC= -0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE= -10A, IC=0 ICES Collector Cut-off Current : BC327 : BC328 VCE= -45V, VBE=0 VCE= -25V, VBE=0 BVCES hFE1 hFE2 Min. Typ. VCE= -1V

00 80 BC337 240 BC327A TO-92 60 500 625 100 400 80 BC337A 240 BC327-16 TO-92 45 500 625 100 250 80 BC337-16 240 BC327-25 TO-92 45 500 625 160 400 80 BC337-25 240 BC327-40 TO-92 45 500 625 250 600 80 BC337-40 240 BC328 TO-92 25 500 625 100 600 80 BC338 240 BC328-16 TO-92 25 500 625 100 250 80 BC338-16 240 BC328-25 TO-92 25 500 625 160 400 80 BC338-25 240 BC328-40 TO-92 25 500 625 250 600 80 BC338-40 240 BC556 TO-92 65 100 500 125 475 100 BC546 270 BC556A TO-92 65 100 500 125 250 100 BC546A 270 BC556B TO-92 65 100 500 220 475 100 BC546B 270 BC557 TO-92 45 100 500 125 800 100 BC547 270 BC557A TO-92 45 100 500 125 250 100 BC547A 270 BC557B TO-92 45 100 500 220 475 100 BC547B 270 BC557C TO-92 45 100 500 420 800 100 BC547C 270 BC558 TO-92 30 100 500 125 800 100 BC548 270 BC558A TO-92 30 100 500 125

4.0 ----10 10 10 10 10 10 10 - 5A 5B 5C 5E 5F 5G 6A 6B 6C 6E 6F 6G 1A 1B 1E 1F 1G 1J 1K 1L 2B 2C 2F 2G 3A 3B 3E 3F 3G 3J 3K 3L 4A 4B 4C 4E 4F 4G C7 C8 D7 D8 H7 K9 FD FF FE FG K7 K8 C1 C2 D1 D2 D3 SIMILAR LEADED DEVICES BC327 BC327.16 BC327.25 BC327.40 BC328 BC328.16 BC328.25 BC328.40 BC337 BC337.16 BC337.25 BC337.40 BC338 BC338.16 BC338.25 BC338.40 BC546 BC546A BC546B BC547 BC547A BC547B BC547C BC548 BC548A BC548B BC548C BC549 BC549B BC549C BC550 BC550B BC550C BC556 BC556A BC556B BC557 BC557A BC557B BC557C BC558 BC558A BC558B BC558C BC559 BC559A BC559B BC559C BC560 BC560A BC560B BC560C MPSA64 MPSA64 MPSA14 MPSA14 MPSA77 MPSA77 MPSA27 MPSA27 - Shaded areas indicate Darlington. Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m Transistors SOT-23 Case Proelectron Series 350mW (Continued) TYPE NO. DESCRIPTION BCW60 BCW60A BCW60B BCW60C BCW60D BCW61 BCW61A BCW61B BCW61C BCW61D BCW65 BCW65A BCW65B BCW65C BCW66 BCW66F BCW66G BCW66H BCW

BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES *High Current : IC=-800mA. *DC Current Gain : hFE=100630 (VCE=-1V, Ic=-100mA). *For Complementary with NPN type BC338. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -800 mA Emitter Current IE 800 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT - - -100 nA Collector Cut-off Current ICBO VCB=-25V, IE=0 DC Current Gain (Note) hFE VCE=-1V, IC=-100mA 100 - 630 Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -0.7 V Base-Emitter Voltage VBE(ON) VCE=-1V, IC=-300mA - - -1.2 V Transition Frequency fT VCE=-5V, IC=-10m

Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Available current gain groups per type Lieferbare Stromverstarkungsgruppen pro Typ 200 K/W 1) RthA BC 337 / BC 338 BC 327-16 BC 328-16 BC 327-25 BC 328-25 BC327-40 BC328-40 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 01.11.2003 3