2SA1320 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1320 High Voltage Switching Applications Color TV Chroma Output Applications * High voltage: VCEO = -250 V * Low Cre: 1.8 pF (max) * Complementary to 2SC3333 Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -250 V Collector-emitter voltage VCEO -250 V Emitter-base voltage VEBO -5 V DC IC -50 Pulsed ICP -100 Base current IB -20 mA Collector power dissipation PC 0.6 W Junction temperature Tj 150 C Tstg -55~150 C Collector current Storage temperature range mA JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.21 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum rating
2SA1320 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1320 High Voltage Switching Applications Color TV Chroma Output Applications * High voltage: VCEO = -250 V * Low Cre: 1.8 pF (max) * Complementary to 2SC3333 Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -250 V Collector-emitter voltage VCEO -250 V Emitter-base voltage VEBO -5 V DC IC -50 Pulsed ICP -100 Base current IB -20 mA Collector power dissipation PC 0.6 W JEDEC TO-92 Junction temperature Tj 150 C JEITA SC-43 Tstg -55~150 C TOSHIBA 2-5F1B Collector current Storage temperature range mA Weight: 0.21 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum rating
2SA1320 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1320 High Voltage Switching Applications Color TV Chroma Output Applications * High voltage: VCEO = -250 V * Low Cre: 1.8 pF (max) * Complementary to 2SC3333 Unit: mm Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -250 V Collector-emitter voltage VCEO -250 V Emitter-base voltage VEBO -5 V DC IC -50 Pulsed ICP -100 Base current IB -20 mA Collector power dissipation PC 0.6 W Junction temperature Tj 150 C Tstg -55~150 C Collector current Storage temperature range mA TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Electrical Characteristics (Ta = 25C) Characteristics JEDEC Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -200 V, IE = 0 3/4 3/4 -0.1 mA Emitter cut-off current IEBO VEB = -5 V, IC = 0 3/4 3/4 -0.1 mA V (BR) CEO IC = -1 mA, IB = 0 -250 3/4 3/4 V VCE = -20 V, IC = -25 mA 50 3/4 3/4 IC = -10 mA, IB = -1 mA 3/4 3/4 -1.5 V Col
2SA1320 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1320 High Voltage Switching Applications Color TV Chroma Output Applications * High voltage: VCEO = -250 V * Low Cre: 1.8 pF (max) * Complementary to 2SC3333 Unit: mm Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -250 V Collector-emitter voltage VCEO -250 V Emitter-base voltage VEBO -5 V DC IC -50 Pulsed ICP -100 Base current IB -20 mA Collector power dissipation PC 0.6 W Junction temperature Tj 150 C Tstg -55~150 C Collector current Storage temperature range mA TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Electrical Characteristics (Ta = 25C) Characteristics JEDEC Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -200 V, IE = 0 -0.1 A Emitter cut-off current IEBO VEB = -5 V, IC = 0 -0.1 A V (BR) CEO IC = -1 mA, IB = 0 -250 V VCE = -20 V, IC = -25 mA 50 IC = -10 mA, IB = -1 mA -1.5 V Collector-emitter breakdown voltage DC curren
2SA1320 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2S$A1320 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm COLOR TV CHROMA OUTPUT APPLICATIONS High Voltage : VcRO=250V @e =6Low Cre : 1.8pF (Max.) 1.8 N. 4.7 MAX. t 0.8 @ Complementary to 28C3333 12.7 Mi MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL | RATING | UNIT a 1.27 Collector-Base Voltage VCBO 250 Vv f aon g Collector-Emitter Voltage VCEO 250 Vv th Emitter-Base Voltage VEBO 5 Vv 1. EMITTER DC I 50 Collector Current c mA 2. COLLECTOR Pulsed | Icp 100 3. BASE Base Current Ip 20 mA ||JEDEC TO-92 Collector Power Dissipation P 0.6 WwW EIAJ SC-43 Junction Temperature Tj 150 C TOSHIBA 2-5F1B Storage Temperature Range Tstg 55~150 C Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current Icpo | VcBp=200V, In=0 |-0.1] pA Emitter Cut-off Current IEBO VEB= 4V, Ic =0 |-01] pA Collector-Emitter Breakdown Voltage V (BR) CEO| Ic= 1mA, Ip=0 250) 7 V
SC3266 2SA1296 2SC3279 2SA1300 300 0.1 30 to 150 0.5 -300 -0.1 30 to 150 -0.5 250 0.05 50 min 1.5 -250 -0.05 50 min -1.5 High-speed switching 15 0.2 40 to 240 0.3 2SC752(G)TM High hFE 50 0.15 600 to 3600 0.25 2SC3112 High breakdown voltage 2SA1091 2SC3333 2SA1320 * The products shown in bold are also manufactured in offshore fabs. * Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 2 2010/9SCE0004K General-Purpose Transistors (Single) (mm) NPN 100 50 General-purpose Low noise 30 500 50 500 120 100 12 400 12 500 15 800 25 800 800 10 2000 20 2000 20 1500 20 2500 30 3000 50 1000 50 1700 50 2500 Strobe 10 5000 (3000) High breakdown voltage 80 300 High hFE 50 150 Muting 20 300 High-speed switching 15 200 High-voltage switching 200 50 High breakdown voltage 250 50 300 100 Darlington 40 300 2SC5376CT 2SA1955CT PNP PNP 0.8 1.6 0.8 1.6 (mm) NPN SSM 1.6 (mm) NPN 2SC6026CT 2SA2154CT 2SC6026 150 30 High current PNP 1.2 1.2 1.0 1.0 Classificatio
2SA1320 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2S$A1320 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm COLOR TV CHROMA OUTPUT APPLICATIONS z e High Voltage : VoRo=250V 2 @ Low Cre : L.8pF (Max.) af] z @ Complementary to 28C3333 = MAXIMUM RATINGS (Ta = 25C) : CHARACTERISTIC SYMBOL | RATING | UNIT al Let < ; Collector-Base Voltage VCBO 250 Vv 6 om 3 Collector-Emitter Voltage VCEO 250 Vv = Emitter-Base Voltage VEBO 5 Vv 1. EMITTER DC I 50 Collector Current C mA 2. COLLECTOR Pulsed | Icp 100 3. BASE Base Current Ip 20 mA || JEDEC TO-92 Collector Power Dissipation Pc 0.6 Ww {|| EIA SC-43 Junction Temperature Tj 150 C TOSHIBA 2-5F1B Storage Temperature Range Tstg 55~150 C Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX.| UNIT Collector Cut-off Current IcBo | VcB=200V, IR=0 |-01 | A Emitter Cut-off Current Ippo | VeB=5V, Ic=0 |-01 | vA Collector-Emitter _ _ Breakdown Voltage V (BR) CEO|!c= 1mA, Ip=0 250) 7 Vv DC Curre
3 ab 220 ah SOURCE MB MB 1 5 a7ue Ty R110 100uF L s { C544 ab, { 39 8.V 1 8 UPC7805H { 47uF Ty | cioe L. 11 Aas MA MA IC704 5V REG | ot 1 44 | Royo 02 38.0V 15-02 | , 4.3V SOURCE MA MA 1 SVS 4 EE sShece R752 Vv 1 C780 a peroee 5 68 5600 3 1 017, o0nbur 5. 2SA1320 MA MA J 1 0710 1 evi 100 Q530 REG j ; ; 31.7V i to: 1 100uF 36.5V a 13 | SOURCE 77 | 0708. \ \ \ abe C131 Shar FoA02-30A y. L701 ' - + + 1S2076A L eee ee SAP Vee toe 5.0V Ww 01 T 30.0V Re iece 38: + eo + DS30g a532| 1S2076A 39K R531 2700 ERA1502 1S . 5.0V | | | | 6 | SOURCE e718 1 c760 |. c3029 c771 C717 #h c719 ure 01 01 T | I 350ur r o1 y VDLTAGES TAKEN WITH SIGNAL DM HD L657 VOLTAGES TAKEN WITH SIGNAL am 212V ADDITIONAL SCHEMATIC 1 4 662 aL Read SOURCE NOTES, SEE PAGE 1 e+ A PHOTOFACT STANDARD NOTATION SCHEMATIC WITH (eneleatnoacy Howard W. Sams & Co. 1994 Page2 SET 3395 E FPage1 SET 3395 TROUBLESHOOTING POWER SUPPLY Check F901. If F901 is open. Check D953, C901, and C953 thru C956. Apply 120VAC and check for approximately 20.0V at th
7A 2SAT20A QSA1115 = = 2SA1015 2SA1310 2SA1993 2SA933AS 2SA1116 tury 2SA1493 2SA1117 tury 2SA1494 2SA1120 RS 2SA1357 2SB873 2SA1121 Ao 2SB815 2SA1182 2SB624 2SB710 2SA1366 2SA1036K 2SA1122 Aw 2SA1162 2SB736 2SBT09A 2SA1530A 2SA1037AK 28A1123 hm OF 2SA1208 2SA1320 2SA1376 2SA1124 HOF 2SA1208 2SA1320 2SA1285A 28A1125 mh OF 2SA1360 2SA1124 2SAl127 MOF 2SA1015 2SA9334S 28A1128 wm OF 2SB698 2SA562TM 2SAB54S 28A1129 = 2SB919 2SB1018 2SB953A 2SB1290 28A1133 ROOF 2SB940 2SA2005 2SA1133A MOF 2SA940 2SA1006 2SB861 2SB940A 2SA1135 tury 2SA1693 2SB754 2SB812A 2SA1136 ods 2SA970 2SA992 2SA1081 2SA921 2SA113? ods 2SA970 2SA992 2SA1081 2SA921 25A1138 Af 2SA1123 2SA1141 a 2SA1695 2SA1265N 2SB1154 2SA1142 oe 2SA1209 2SB648A # 2SA9TT 25A1143 = 2SA1309A 2SA933AS 2SA1144 rd 2SA1360 2SA1142 2SB648 2SA914 25A1145 RS 2SA1208 2SB646 2SA1124 2SA1285A
62TM 2SC1627 2SA817 2SC2120 2SA950 2SC3266 2SA1296 2SC3279 2SA1300 * 300 0.1 30 to 150 0.5 -300 -0.1 30 to 150 -0.5 250 0.05 50 min 1.5 -250 -0.05 50 min -1.5 15 0.2 40 to 240 0.3 2SC752(G)TM hFE 50 0.15 600 to 3600 0.25 2SC3112 * * RoHS 2 2SA1091 2SC3333 2SA1320 *: 2009/7 SCJ0004O 50 100 500 50 500 120 100 12 400 12 500 15 800 25 800 30 800 10 2000 20 2000 20 1500 20 2500 30 3000 50 1000 50 1700 50 2500 80 300 50 150 20 300 15 200 200 50 0.8 1.6 1.6 0.8 PNP (mm) NPN PNP (mm) NPN PNP 2SA2154 2SC6026MFV 2SA2154MFV 2SC4738F 2SA1832F 2SC4738 2SA1832 2SC5376FV 2SA1955FV 2SC5376F 2SA1955F 2SC5376 2SA1955 5000 hFE NPN (3000) 2SC5376CT 2SA1955CT 1.6 (mm) PNP SSM 1.6 (mm) NPN 2SC6026CT 2SA2154CT 2SC6026 150 30 10 PNP 1.2 1.2 1.0 0.6 (mm) NPN () ESM VESM 0.8 0.6 1.0 VCEO IC (V) (mA) Max Max fSM 0.85 CST3 250 50 300 100 40 300 * PNP - * * RoHS 3 2009/7 SCJ0004O USM UFM 2.9 2.0 TO-92 S-MINI 5.1 MAX 2.9 PNP 2SC4116 2SC4118 2SA1586 2SA1588 2SC4117 2SA1587 2SC5233 2SA1954 PNP (mm) NPN PNP (mm) NPN PNP 2SC2712
3266 2SA1296 2SC3279 2SA1300 300 0.1 30 to 150 0.5 -300 -0.1 30 to 150 -0.5 250 0.05 50 min 1.5 -250 -0.05 50 min -1.5 High-speed switching 15 0.2 40 to 240 0.3 2SC752(G)TM High hFE 50 0.15 600 to 3600 0.25 2SC3112 High breakdown voltage * 2SA1091 2SC3333 2SA1320 * The products shown in bold are also manufactured in offshore fabs. * Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 2 *: New product 2009-8 SCE0004I General-Purpose Transistors (Single) (mm) NPN 50 General-purpose Low noise High current 100 PNP 30 500 50 500 120 100 12 400 12 500 15 800 25 800 30 800 10 2000 20 2000 20 1500 20 2500 30 3000 50 1000 50 1700 50 2500 Strobe 10 5000 (3000) High breakdown voltage 80 300 High hFE 50 150 Muting 20 300 High-speed switching 15 200 High-voltage switching 200 50 High breakdown voltage 250 50 300 100 Darlington 40 300 2SC5376CT 2SA1955CT NPN PNP 0.8 1.6 0.8 1.6 (mm) PNP SSM 1.6 (mm) NPN 2SC6026CT 2SA2154CT 2SC6026 150 1.2 1.2 1.0 1
00 to 3600 0.25 2SC3112 High breakdown voltage * The products shown in bold are also manufactured in offshore fabs. * Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 190 ** 2SA1091 2SC3333 2SA1320 **: Under development General-Purpose Transistors (Single) (mm) NPN 50 General-purpose Low noise High current 100 PNP 30 500 50 500 120 100 12 400 12 500 15 800 25 800 30 800 10 2000 20 2000 20 1500 20 2500 30 3000 50 1000 50 1700 50 2500 Strobe 10 5000 (3000) High breakdown voltage 80 300 High hFE 50 150 Muting 20 300 High-speed switching 15 200 High-voltage switching 200 50 High breakdown voltage 250 50 300 100 Darlington 40 300 2SC5376CT 2SA1955CT PNP 0.8 1.6 0.8 PNP (mm) NPN PNP (mm) NPN PNP 2SA2154 2SC6026MFV 2SA2154MFV 2SC4738F 2SA1832F 2SC4738 2SA1832 2SC5376FV 2SA1955FV 2SC5376F 2SA1955F 2SC5376 2SA1955 * For the PNP transistors, the minus sign (-) indicating a negative voltage is omitted. * The products shown in bold are also ma
2SC2551 2SA562TM 2SC1627 2SA817 2SC2120 2SA950 2SC3266 2SA1296 2SC3279 2SA1300 300 0.1 30 to 150 0.5 -300 -0.1 30 to 150 -0.5 250 0.05 50 min 1.5 -250 -0.05 50 min -1.5 15 0.2 40 to 240 0.3 2SC752(G)TM hFE 50 0.15 600 to 3600 0.25 2SC3112 2SA1091 2SC3333 2SA1320 * * RoHS 2 2010/1 SCJ0004O 100 50 30 500 50 500 120 100 12 400 12 500 15 800 25 800 30 800 10 2000 20 2000 20 1500 20 2500 30 3000 50 1000 50 1700 50 2500 10 5000 (3000) 80 300 hFE 50 150 20 300 15 200 200 50 250 50 300 100 40 300 2SC5376CT 2SA1955CT PNP PNP 0.8 1.6 1.6 0.8 1.6 (mm) NPN SSM 1.6 (mm) NPN 2SC6026CT 2SA2154CT 2SC6026 150 PNP 1.2 1.2 1.0 0.6 (mm) NPN () ESM VESM 0.8 0.6 1.0 VCEO IC (V) (mA) Max Max fSM 0.85 CST3 (mm) NPN PNP (mm) NPN PNP 2SA2154 2SC6026MFV 2SA2154MFV 2SC4738F 2SA1832F 2SC4738 2SA1832 2SC5376FV 2SA1955FV 2SC5376F 2SA1955F 2SC5376 2SA1955 * PNP - * * RoHS 3 2010/1 SCJ0004O USM UFM 2.9 2.0 TO-92 S-MINI 5.1 MAX 2.9 PNP PNP (mm) NPN PNP 2SC4116 2SA1586 TTC4116FU * TTA1586FU * 2SC4118 2SA1588 2SC4117 2SA1587 2SC52
Strobe 10 2SC5233 2SA1954 HN1A07F HN1C05FE HN4C05JU 2SC5232 2SA1953 HN1A02F 2SA1362 2SC6133 2SA2214 2SA2215 2SC3265 2SA1298 2SC4210 2SA1621 HN4C08J HN4A08J 2SC6134 2SC6135 2SA2195 2SC6100 5000 (3000) Package Size HN1C07F 2SC3325 2SA1313 HN1C03F (2SC3333) (2SA1320) 2SC2551 2SC5853 2SC5854 (2SC5766) 2.0 x 1.25 (3 pins) 2.0 x 1.7 (3 pins) 2.9 x 1.6 (3 pins) 2.9 x 1.5 (3 pins) Unit: mm : New product * : Under development : Point-symmetrical connections 1.6 x 1.2 (5 pins) 2.0 x 1.25 (5 pins) Flat lead 2.9 x 1.6 (5 pins) 1.0 x 0.9 (6 pins) 1.0 x 0.8 (6 pins) 1.6 x 1.2 (6 pins) 2.0 x 1.25 (6 pins) : Cascaded connections : Common emitter : Common base : Parallel connections 62 2SC2878 63 2.9 x 1.6 (6 pins) 2SA1091 10 Small-Signal Transistors 10.2 Bias Resistor Built-in Transistors (BRTs) (NPN/PNP) General-Purpose Type Ratings VCEO (V) 50 IC (mA) 100 Polarity ESM (SOT-490, SC-81) VESM (SOT-723) Package SSM (SOT-416, SC-75) USM (SOT-323, SC-70) S-Mini (SOT-346, SC-59) NPN PNP NPN PNP NPN PNP NPN PNP NPN PN
e FI Polari Package - Description id TO-92 TO-92 MOD (Power Mold) TPS TO-126 (IS) | TO-220AB | TO-220N(IS) Remarks Vceo=150V NPN 2802229 io=50mA 2802705. 2803423 fr=120 PNP 2SA949 ~200MHz 2SA1145 2SA1360 Vceo=250V lexSOmA NPN 28C3333 2803334 trs120MHz PNP 2SA1320 2SA1321 Vce0=250 28C4448 ~300 NPN 2SC4679 >SC4678 lo=100~150mA PNP For HDTV {m=240MHz 2SA1800 Vcz0=300V NPN 2SC2551 2802482 2SC3805 28C3619 2804544 te=S0~100mA 2505027 2803620 2801569 ft=80~120MHz PNP 2SA1091 100