NG MIL-PRF-19500/710 7 May 2003 The documentation and process conversion measures necessary to comply with this document shall be completed by 25 November 2008. * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6674T1, 2N6674T3, 2N6675T1, AND 2N6675T3, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-254AA) and figure 2 (TO-257AA). * 1.3 Maximum ratings. Unless otherwise specified, TA = +25C. RJC RJC VEBO IB IC TC = +25C T1 only (1) T3 only (1)
2N6674, 2N6675. SECTOR 10-A SwitchMavt Power Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Application Features: = Fast switching speed @ High voltage ratings: Vocex=350 V to 450 V is Applications: Off-line power supplies 8 High-voitage inverters Switching regulators B Low Vee(sat) at lk=10 A The 2N6674 and 2N6675 SwitchMax series of silicon n-p-n power transistors feature high-voltage capability, fast switch- ing speeds, and low saturation voltages, together with high- safe-operating-area (SOA) ratings. They are specially designed for off-line power supplies, converter circuits, and pulse-width-modulated regulators. These high-voltage, high- speed transistors are tested for parameters that are essen- tial to the design of high-power switching circuits. Switching MAXIMUM RATINGS, Absolute-Maximum Values: "Veev Vcex(Clamped) Vee=-1.5 Viele c cece ec eteneeceece "WG cece cece ccc cce eee ce en eee neteteeeees To up to 25C occ cece cen
2N6674 Qualified Level 2N6675 2N6689 JAN JANTX JANTXV 2N6690 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current VCEO VCBO VCEX VEBO IB IC @ T A = +250C @ T C = +250C(1) Total Power Dissipation Operating & Storage Temperature Range PT 2N6674 2N6689 300 450 450 2N6675 2N6690 400 650 650 7.0 5.0 15 2N6674 2N6675 6.0(2) 175 Unit Vdc Vdc Vdc Vdc Adc Adc 2N6689 2N6690 3.0(3) 175 T op; T stg -65 to +200 Symbol Max. 2N6674, 2N6675 TO-3 (TO-204AA)* W W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) 2) 3) RJC Unit 2N6689, 2N6690 TO-61* 0 1.0 C/W Derate linearly 1.0 W/0C for T C > 250C Derate linearly 34.2 mW/0C for T A > 250C Derate linearly 17.1 mW/0C for T A > 250C * See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. 2N6674, 2N6689 2N6675, 2N
2N6674, 2N6675. 10-A SwitchMaxt Power Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications Features: m Fast switching speed High voltage ratings: Vcex=350 V to 450 V @ Low Vce(Sat) at lc=10 A Applications: Off-line power supplies = High-voltage inverters Switching regulators The 2N6674 and 2N6675 SwitchMax series of silicon n-p-n power transistors feature high-voltage capability, fast switch- ing speeds, and low saturation voltages, together with high- safe-operating-area (SOA) ratings. They are specially designed for off-line power supplies, converter circuits, and pulse-width-modulated regulators. These high-voitage, high- speed transistors are tested for parameters that are essen- tial to the design of high-power switching circuits. Switching MAXIMUM RATINGS, Abso/ute-Maximum Values: "Vey Vee=H-1 5 Vee eee *Vcex(Clamped) Vae=-1.5 Vi. cece cece cece ee eee Teup to 25C... eee eee Te above 25C, derate linearly ....... Teta, Ty
2N6674, 2N6675, RJH6674, RJUH6675 HARRIS SEMICOND SECTOR 10-A SwitchiiaXt Power Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications Features: @ Fast switching speed High voltage ratings: Voex=350 V to 450 V @ Low Vce(Sat) at lh=10 A Applications: & Off-line power supplies High-voltage inverters & Switching regulators The 2N6674, 2N6675, RJH6674, and RJH6675 SwitchMax series of silicon n-p-n power transistors feature high-voltage capability, fast switching speeds, and low saturation voltages, together with high safe-operating-area (SOA) ratings. They are specially designed for off-line power supplies, converter circuits, and pulse-width-modulated regulators. These high- voltage, high-speed transistors are tested for parameters that are essential to the design of high-power switching circuits. Switching times, including inductive turn-off time, and MAXIMUM RATINGS, Absolute-Maximum Values: e7e D T-33 -15 File Number 1164 - WME
2N6674 2N6675 DESCRIPTION *With TO-3 package *High voltage,high speed APPLICATIONS *Switching regulators *Inverters *Solenoid and relay drivers *Deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS 2N6674 VCBO Collector-base voltage 300 Open base 2N6675 VEBO V 650 2N6674 Collector-emitter voltage Emitter-base voltage UNIT 450 Open emitter 2N6675 VCEO VALUE V 400 Open collector 7 V IC Collector current 15 A IB Base current 5 A PT Total Power Dissipation Ta=25 6 TC=25 175 W Tj Junction temperature 200 Tstg Storage temperature -65~200 VALUE UNIT 1.0 /W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification Silicon NPN Power Transistors 2N6674 2N6675 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6674 VCEO(SUS) Collector-emitter sustaining vo
2N6674 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio... 1 of 2 http://www.americanmicrosemi.com/information/spec/?ss_pn=2N6674 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N6674 Availability Online Store Diodes Buy 2N6674 at our online store! Transistors Integrated Circuits Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N6674 Information Optoelectronics Did you Know... Thyristors Category Transistors Products AMS has access to a Class Transistors; Bipolar; Si NPN Power network of more than Search for Parts Type Transistors; Bipolar; Si NPN Power Request a Quote Test Houses components? Combine that 2N6674 Specifications Information Spec Sheets Military/High-Rel : N Testimonials Store Policies Contact Us rigorous quality control standards, and you'll find V(BR)CEO (V) : 300 FAQs Company with our top-notch customer service and Tutorials Shipping
2N6674/6675 DESCRIPTION *High Power Dissipation *High Switching Speed *Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min)- 2N6674 = 400V(Min)- 2N6675 APPLICATIONS Designed for high voltage switching applications such as: *Switching regulators *Inverters *Solenoid and relay drivers *Deflection circuits n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VCEX VEBO PARAMETER VALUE UNIT s c s i . w 2N6674 450 2N6675 650 Collector-Base Voltage V w w 2N6674 300 2N6675 400 2N6674 450 2N6675 650 Collector-Emitter Voltage Collector-Emitter Voltage V Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current-Continuous 5.0 A Collector Power Dissipation@Ta=25 6 Collector Power Dissipation@TC=25 175 TJ Junction Temperature 200 Tstg Storage Temperature -65~200 PC W THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 /W isc Websitewww.iscsemi.cn isc Product Specification INCHANGE
2N6674, 2N6675, 2N6689. JAND 2N6690 JAN, JANTX, AND JANTXY This specification 1s approved for use by Rome Air Develop- ment Center, Department of the Air Force, and is available for use by all Departments and d Agencies of the Department of Nefense. 1. SCOPE 1.1 Scope. This specification covers the detail requir rements for NPN, silicon, power transistors for use in high-speed power-switching applications. Three levels of product assurance are provided for each device type as specified in MIL- -19500. - ' 1.2 Physical dimensions. -See figure | (70-3) = 2N6674, 2N6675 , See figure 2 (T0-61) - 2N6689, 2N6690 1.3 Maximum ratings. . i Pe V/ = 25C | T, = +25 di L< Ty = +25 c 7 25C | ard | vey | Vege | te | Te | Tere ant Top cex | | 2N6674 6 175 450 300 7 5 15 -65 to +206 2N6675 6 175 650 400 7 5 1 ~65 to +200 2N6689 3 175 450 300 7 5 15 ~65 to +200 2n6690 3 175 650 400 7 5 15 -65 to +200 Reawantean i Derate 4 Derate 14 y 1.0 W/C for Te > 25C nearly 34.2 md/C for "Th > 25C = <
2N6674 Qualified Level 2N6675 2N6689 JAN JANTX JANTXV 2N6690 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current VCEO VCBO VCEX VEBO IB IC @ TA = +250C @ TC = +250C(1) Operating & Storage Temperature Range Total Power Dissipation PT Top; Tstg 2N6674 2N6675 2N6689 2N6690 300 400 450 650 450 650 7.0 5.0 15 2N6674 2N6689 2N6675 2N6690 6.0(2) 3.0(3) 175 175 -65 to +200 Unit Vdc Vdc Vdc Vdc Adc Adc 2N6674, 2N6675 TO-3 (TO-204AA)* W W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 1.0 W/0C for TC > 250C 2) Derate linearly 34.2 mW/0C for TA > 250C 3) Derate linearly 17.1 mW/0C for TA > 250C Symbol RJC Max. 1.0 Unit C/W 0 2N6689, 2N6690 TO-61* * See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. 2N6674, 2N6689 2N6675, 2N6690 V(
2N6674 JAN JANTX JANTXV 2N6675 2N6689 2N6690 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current VCEO VCBO VCEX VEBO IB IC @ TA = +250C @ TC = +250C(1) Operating & Storage Junction Temperature Range Total Power Dissipation PT Top; Tstg 2N6674 2N6675 2N6689 2N6690 300 400 450 650 450 650 7.0 5.0 15 2N6674 2N6689 2N6675 2N6690 6.0(2) 3.0(3) 175 175 -65 to +200 Unit Vdc Vdc Vdc Vdc Adc Adc 2N6674, 2N6675 TO-3 (TO-204AA)* W W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 1.0 W/0C for TC > 250C 2) Derate linearly 34.2 mW/0C for TA > 250C 3) Derate linearly 17.1 mW/0C for TA > 250C Symbol RJC Max. 1.0 Unit C/W 0 2N6689, 2N6690 TO-61* * See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. 2N6674, 2N6689 2N6675, 2N6690 V(BR)CEO
2N6674 2N6675 Silicon NPN Power Transistors DESCRIPTION *With TO-3 package *High voltage,high speed APPLICATIONS *Switching regulators *Inverters *Solenoid and relay drivers *Deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N6674 VCBO 300 Open base 2N6675 VEBO V 650 2N6674 Collector-emitter voltage Emitter-base voltage UNIT 450 Open emitter Collector-base voltage 2N6675 VCEO VALUE V 400 Open collector 7 V IC Collector current 15 A IB Base current 5 A PT Total Power Dissipation Ta=25 6 TC=25 175 W Tj Junction temperature 200 Tstg Storage temperature -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification 2N6674 2N6675 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6674<
2N6674 & 2N6675 Features * Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/537 * TO-3 (TO-204AA) Package Maximum Ratings Symbol 2N6674 2N6675 Units Collector - Emitter Voltage Ratings VCEO 300 400 Vdc Collector - Base Voltage VCBO 450 650 Vdc Collector - Base Voltage VCBX 450 650 Vdc Emitter - Base Voltage VEBO 7.0 Vdc Base Current IB 5.0 Adc Collector Current IC Total Power Dissipation @ TA = +25 C (1) @ TA = +25 C Operating & Storage Temperature Range PT 15 6.0(2) 175 Top, Tstg Adc 3.0(3) 175 -65 to +200 W W C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Case Symbol Maximum Units RJC 1.0 C/W 1) Derate linearly @ 1.0 mW/C for TA > +25C 2) Derate linearly @ 34.2 mW/C for TA > +25C 3) Derate linearly @ 17.1 mW/C for TA > +25C Electrical Characteristics OFF Characteristics Collector - Emitter Breakdown Voltage IC = 200 mAdc 2N6674 2N6675 Collector - Emitter Cutoff Current VCE = 450 Vdc, VBE = -1.5 Vdc VCE = 650 Vdc, VBE = -1.5 Vdc 2N6
2N6674, 2N66/75 High Voltage NPN Transistors 10 Amperes * 400 Volts FEATURES @ High Voltage Rating 400 Volts @ Industrial and Military Applications @ Superior Resistance to Thermal Fatique APPLICATIONS @ Switching Regulators @ PWM Inverters Deflection Circuits Motor Controls @ Solenoid Drivers Switch time and sustaining test circuit The 2N6674 and 2N6675 series transistors are high-voltage, high-gain, NPN, 10 ampere switching vooe transistors for Industrial and Military Service. ON TIME I The series is particularly well suited to off-line [7] ; (transformerless) switching power supplies operating C iNsoNs as high as 40 KHz. Other applications include PWM PULSE | 4 VCLAMP Inverters, Motor Controls, Relay and Solenoid cMos g Drivers, Deflection Circuits and Pulse Modulators. 8 a 1. Resistive switch time 2. VCEO(SUS) 3. Inductive switch time 1.050 __e (26.68) MAX. ___ 0,450 (11.43) 0.135 tr MAX, oa . 0.250 (6.35) (3.43) MAX. _ + SEATING T }>_ PLANE 0.675 (17.65)t 1.197 (30.40) 1.573 0.6
1 MOTA BLY89A 3 PHIN NE02135 1 NECE | 2802233 28C2256 28C2288M $01444 39 THCS DE351 s DGE ASO1 a APX 2N6497 1 MOTA 2N6249 1 MOTA NE022081-12 1 NECE 28C 1971 2802085 BFP90A a APX SGSI BUX41 1 SGSI 28C2289 MRF260 1 MOTA MJE2361T 1 MOTA | 2802151 BUT21 3 APX 2N6674 3 PTC NE020790-07. 1 NECE 2801972 28C2097 MJ10014 1 MOTA D44TES a3 GESY D64VS3 3 GESY 2290 MRF262 1 MOTA MFR247 1 MOTA $T10014 3 STI DE379 3 DGE OE286 3 OGE MRF421 1 MOTA 28C 1983 MRF247 1 MOTA]| 28C2159 2802235 SDT7605 3 SOD MRF454 1 MOTA TIP31A 1 APX 2802098 MJ10015 1 MOTA TIP47 1 MOTA SDT7610 3 SOD $D1405 3 THCS TIP111 1 MOTA MRF475 1 MOTA PTC10015 3 PTC SGSI SDT7611 3 SOD 28C22982 SGsi | 28C2099 $T10015 3 STI BUX84 3 PHIN SDT7612 a SOD BUS23C 1 APX BD241A a RCA MRF406 1 MOTA] 28C2167 ST47 9 STI SVT7563 3 TRWS MJ13091 1 MOTA BDX33B a RCA 28C2100 MJE15030 1 MOTA } 2802236 28C2260 28C2293 D44C8 3a GESY MFR412 1 MOTA BUV27A a APX TIPS1 1 APX 2N6249 1 MOTA BUS23C 1 APX D44D5 3 GESY MAF412 1 MOTA ST115030 3 STI MOTA BUX41 1 SGSI MJ13091 1 M