1 September 2004. INCH-POUND MIL-PRF-19500/375G 21 June 2004 SUPERSEDING MIL-PRF-19500/375F 19 March 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3821UB, 2N3822, 2N3822UB, 2N3823, AND 2N3823UB, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for N-channel, junction, silicon, field-effect depletion mode transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-72) and figure 2 (surface mount). * 1.3 Maximum ratings. Unless otherwise specified, TC = +25C. PT (1) TA = +25C 2N3821 2N3821UB VDG and VDS 2N3822 2N3823 2N3822UB
78) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE Equivalent to MIL-PRF-19500/375 DEVICES LEVELS 2N3821 2N3822 2N3823 2N3821UB 2N3822UB 2N3823UB MQ = JAN Equivalent MX = JANTX Equivalent MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Symbol 2N3821, UB 2N3822, UB 2N3823, UB Gate-Source Voltage VGSR 50 30 V Drain-Source Voltage VDS 50 30 V Drain-Gate Voltage VDG 50 30 V Gate Current IGF 10 mA Power Dissipation TA = +25C (1) Operating Junction & Storage Temperature Range PT 300 mW Tj, Tstg -55 to + 200 C Parameters / Test Conditions Unit Note: (1) Derate linearly 1.7mW/C for TA > +25C. ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)GSSR 50 50 30 Max. Unit TO-72 (TO-206AF) OFF CHARACTERTICS Gate-Source Breakdown Voltage VDS = 0, IG = 1.0A dc 2N3821 / UB 2N3822 / UB 2N3823 / UB