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EVICES, INC PNP POWER & HIGH VOLTAGE Device Type 2N2983 2N2984 2N2985 2N2986 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3250 2N3250A 2N3251 2N3251A 2N3467 2N3468 2N3485 2N3485A 2N3486 2N3486A 2N3634 2N3635 2N3636 2N3637 2N3660 2N3661 2N3719 2N3720 2N3740 2N3740A 2N3741 2N3741A 2N3743 2N3743 2N3762 2N3763 2N3774 2N3775 2N3776 2N3777 2N3778 BV CEO 80 120 80 120 30 45 60 30 45 60 -40 60 -40 60 40 50 40 60 40 60 140 140 175 175 30 50 40 60 60 60 80 80 300 300 40 60 40 60 80 100 40 IC 3A 3A 3A 3A 3A 3A 3A 3A 3A 3A -.2A .2A -.2A .2A 1A 1A .6A .6A .6A .6A 1A 1A 1A 1A 1A 1A 3A 3A 2A 4A 2A 1A .5A .5A 1.5A 1.5A 1A 1A 1A 1A 1A VCE (SAT) max HFE min/max @ (V) @ IC (A) Ic (A) 20/60/1 .6/1 20/60/1 .6/1 40/120/1 .6/1 40/120/1 .6/1 20/60/1 1.5/3 20/60/1 1.5/3 20/60/1 1.5/3 50/180/1 1/3 50/180/1 1/3 50/180/1 1/3 50/150/10 .25/10 50/150/10 .25/10 100/300/-10 -.25/-10 100/300/10 .25/10 10/120/500 .5/500 25/75/500 .6/500 40/500/10 .4/150 10/120/150 .4/150 50/500/10 .4/150 100/300/150 .4/150 50/150/50 .5/50 100/300/
2 Pages, 29 KB, Original
2N3740A BFS92 BSP31 TN4030 2SB954 B0240A BCP52 BCX52 ~g~~~A 45 50 MM4005 M0816 M0816 BC303 MM4030 ST4030 BCX52-6 MM4032 ~b~~: 55 60 -65 70 - 75 80 04107 ZTX551 BC161B BSV16 BSV16-6 BCX52-10 BFS93 B0416 ~~~~~t BSV16-16 BCX52-16 04108 2SBll15A 2SB1115A BSVl6-10 2SB963Z 2SB963Z ~~:g~~ MM4036 2N4036 ST4036 TN4036 TN4036 ZT211 TN4314 TP4314 5~~~~6 85 90 041013 041013 041013 BFX40 041011 041014 BSV17 2N3780 ~~~~B 95 - BOT30B BOT30B TIP30B 2N5113 2N4900 Ie Max V(BR)CEO (A) (V) t, fT leBO Max Max tf Max (Hz) (A) (8) (8) 200 200 160 250 300 360 75 100 90 90 300M 300M 125M 50M 150M 150M 150M 170M 150M 150M 500n 500n 40n 40n 100n lOOn ~~g~ 50n 30n 30n 40n 40n 90n 40n ~gg lOOn lOOn lOOn 100n 50n 50n 2uun 20u 390 390 600 600 600 600 100M 100M 75M 80M 120M 120M 100M 100M 100M lOOn lOOn lOOn lOOn 50n 500u loon 150 150 3.0M 3.0M 3.0M 30k 1.0M 80M 3.0M 3.0M 300m 300m 300u 100u 500u 3.0u 100u 100u ~g ~gg ~:g~ ~gg~ 30 30 30 30 40 40 40 40 100 4.0M 70M 100M 100M lOOn 50n lOOn 50n 300u 200u 100n lOOn lOOn 100n 100n h
1 Pages, 103 KB, Original
483 2SD859 2SD859A 2SD1249 2SD1263 2SD1249A 2SD1263A 2SC3496 2SC1034 A3-12 2N6207 2N6203 2N6203 2N6203 2SD146 2N3733 2N4898 2N4910 BDT30 BDT30 MJE30 SSP58 SSP60 TIP30 2N4918 2N4921 2N5112 DTL1661 DTL1641 DTL1651 SD1526-1 2SD147 2N3766 2N4899 2N4911 2N3740 2N3740A BDT30A BDT30A SSP58A SSP60A TIP30A 2N4919 2N4922 2SB954 DTL1662 DTL1642 DTL1652 SD1527-8 2N3767 2N4900 2N4912 See Index V / O Electro Diode Trans See Index See Index Elec Trans CnmsonSemi CentralSemi Motorola NthAmerSemi See Index CrimsonSemi See Index See Index See Index See Index See Index Motorola Texas Instr See Index Elec Trans SGS-Ates CrimsonSemi See Index Motorola Texas Instr See Index Sld St Dvcs Advncd Semi CrimsonSemi Semi Inc See Index Advncd Semi CrimsonSemi Semi Inc See Index See Index See Index Indust Mexi Sanyo Elect Indust Mexi CnmsonSemi Space Power CrimsonSemi Diode Trans Space Power Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Solid Stlnc Acnan Inc See Index Acnan Inc CrimsonSemi Space
1 Pages, 139 KB, Original
O-3 271 2N3024 30 50/180 1.0 1.00 3.0 35.0* 25.0 TO-3 271 2N3025 45 50/180 1.0 1.00 3.0 35.0* 25.0 TO-3 271 2N3026 60 50/180 1.0 1.00 3.0 35.0" 25.0 TO-3 271 2N3719 40 25/180 1.0 0.75 1.0 35.0* 6.0 TO-5 271 2N3720 60 25/180 1.0 0.75 1.0 35.0* 6.0 TO-5 271 2N3740A 6o | 10 1.0 0.6 1.0 4.0 25.0 TO-66 | 269 2N3741A 80. 10 1.0 0.6 1.0 4.0 25.0 TO-66 | 269 "Tc = 100C **Exception to JEDEC B-5PRODUCT CATALOG _Aolitron PLANAR POWER TRANSISTORS Devices. inc. BLAM INIPIN DEVICE VCEO hFE @ Ic | Vcg(sat) @ Ic it Pr CASE | CHIP TYPE (V) MIN/MAX (A) | MAX (V) (A) MIN (MHz) | MAX (W) | TYPE | TYPE 2N2657 0) 40/120 1.0 0.50 1.0 20.0 4.0* |TO-5 184 2N2658 80 40/120 1.0 0.50 1.0 20.0 4.0* |TO-5 184 2N2877 60 20/60 1.0 0.25 1.0 30.0 30.0 |TO-111 184 2N2878 60 40/120 1.0 0.25 1.0 50.0 30.0 |TO-111 184 2N2879 80 20/60 1.0 0.25 1.0 30.0 30.0 |TO-111 184 2N2880 80 40/120 1.0 0.25 1.0 50.0 30.0* |TO-L11 184 2N2890 80 30/90 1.0 0.50 1.0 30.0 5.0 TO-5 191 2N2891 80 50/150 1.0 0.75 2.0 30.0 5.0 TO-5 191 2N3744 40 20/60 1.0
21 Pages, 1126 KB, Scan
2N3740A 2N3741A PNP SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3740 Series types are PNP Silicon Power Transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg 2N3740 2N3740A 60 60 ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=Rated VCEO, VBE=1.5V (2N3740, 2N3741) ICEV VCE=Rated VCEO, VBE=1.5V (2N3740A, 2N3741A) ICEV VCE=40V, VBE=1.5V, TC=150C (2N3740) ICEV VCE=40V, VBE=1.5V, TC=150C (2N3740A) ICEV VCE=60V, VBE=1.5V, TC=150C (2N3741) ICEV VCE=60V, VBE=1.5V, TC=150C (2N3741A)
2 Pages, 422 KB, Original
2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912 2N5427 2N5428 2N5429 2N5430 2N6312 2N6313 2N6314 2N6423 2N4898 2N4899 2N4900 2N6211 2N6212 2N6213 2N6260 2N6261 2N6263 2N6294 2N6295 2N6300 2N6301 2N6315 2N6316 2N6372 2N6373 2N6374 2N6465 2N6466 40312 CM3441 2N6297 2N6298 2N6299 2N6317 2N6318 2N5954 2N5955 2N5956 2N6424 2N6425 2N6467 2N6468 IC (A) MAX PD (W) 4.0 4.0 2.0 2.0 2.0 1.0 1.0 4.0 4.0 4.0 4.0 4.0 4.0 3.0 5.0 3.0 5.0 3.0 5.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 7.0 7.0 7.0 7.0 1.0 1.0 1.0 4.0 4.0 3.0 4.0 4.0 8.0 8.0 7.0 7.0 6.0 6.0 6.0 1.0 1.0 4.0 4.0 4.0 3.0 25 75 35 35 35 20 20 25 25 25 25 20 20 35 75 35 75 35 75 35 20 20 20 25 25 25 40 40 40 40 35 35 35 29 50 20 50 50 75 75 90 90 40 40 40 20 20 40 40 29 25 BVCBO (V) MIN BVCEO (V) MIN hFE MIN MAX 90 90 250 375 500 250 325 60 60 80 80 80 100 50 40 70 60 90 80 500 350 500 500 40 60 80 80 80 100 100 275 350 400 50 90 140 60 80 60 80 60 80 90 70 50 250 325 110 130 60 16
1 Pages, 29 KB, Original
2N3740AR Dimensions in mm (inches). 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. VCEO = 60V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO66 (TO213AA) PINOUTS 1 - Base Parameter 2 - Emitter Case - Collector Max. Units VCEO* 60 V IC(CONT) 4 A 180 - hFE Test Conditions @ 1/0.25 (VCE / IC) Min. Typ. 30 ft 4M PD Hz 25 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to
1 Pages, 11 KB, Original
2N3740A Dimensions in mm (inches). 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. VCEO = 60V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO66 (TO213AA) PINOUTS 1 - Base Parameter 2 - Emitter Case - Collector Max. Units VCEO* 60 V IC(CONT) 4 A 100 - hFE Test Conditions @ 1/0.25 (VCE / IC) Min. Typ. 30 ft 4M PD Hz 25 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to b
1 Pages, 11 KB, Original
12.890 AT JANTXV 2N3736 3.520 2.500 2410 1.080 2.950 AT 2.940 2.000 1.930 1.300 F 0.930 BC 2.100 2N3737 GTC NJS 0S2 RAY 3.520 3.500 S8 3 500 aaso 1.080 9.550 JANTXV 9.500 F 6.790 BC AT 2.940 2.700 2.610 1.300 F 0.930 ac 2.900 9.750 MOT 5.760 4.110 5.760 F 2N3740A NJS Q52 SEI 2.100 2.030 1.950 1.750 1.690 1.650 1.800 ASI GTC 1.840 MOT 2.870 NJS 1.750 PPC 5.250 1.690 QS2 1.750 SEI 1.350 1.540 2.130 1.300 4.250 1.260 1.300 2N3741 2N3741 MOT 6.980 5.170 JAN PPC 7.000 6.000 2.670 AT 3.200 F 2.290 BC JAN PPC 8.250 MOT 12.420 7.560 F CRY AT 4.090 F 3.210 BC 6.710 8.720 MOT 3.400 2.430 3.400 F AT JAN 7.400 9.620 CRY JANTX MOT 4.600 3.290 4.600 F AT JANTX 2N3743 7.900 CRY 10.270 MOT 13230 9.450 13.230 AT JANTXV GTC 11.340 9.250 NJS 8.930 QS2 8.860 SEI GTC 11.840 9.950 NJS 9.600 QS2 9.000 SEI GTC 12.090 NJS 10.800 QS2 10.420 SCA 14.910 SEI 10.000 9.450 7.400 7.140 7.400 9.870 7.950 7.670 7.700 10.080 8.650 8.350 1.050 8.500 2N3747 GTC 11.840 NUS 9.250 8.930 QS2 SCA 13.990 SEI 9.200 9.870 7.350 7.090 9.850
1 Pages, 37 KB, Original
2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912 2N5427 2N5428 2N5429 2N5430 2N6312 2N6313 2N6314 2N6423 2N4898 2N4899 2N4900 2N6211 2N6212 2N6213 2N6260 2N6261 2N6263 2N6294 2N6295 2N6300 2N6301 2N6315 2N6316 2N6372 2N6373 2N6374 2N6465 2N6466 40312 CM3441 2N6296 2N6297 2N6298 2N6299 2N6317 2N6318 2N5954 2N5955 2N5956 2N6424 2N6425 2N6467 2N6468 IC (A) MAX PD (W) 4.0 4.0 2.0 2.0 2.0 1.0 1.0 4.0 4.0 4.0 4.0 4.0 4.0 3.0 5.0 3.0 5.0 3.0 5.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 7.0 7.0 7.0 7.0 1.0 1.0 1.0 4.0 4.0 3.0 4.0 4.0 8.0 8.0 7.0 7.0 6.0 6.0 6.0 1.0 1.0 4.0 4.0 4.0 3.0 25 75 35 35 35 20 20 25 25 25 25 20 20 35 75 35 75 35 75 35 20 20 20 25 25 25 40 40 40 40 35 35 35 29 50 20 50 50 75 75 90 90 40 40 40 20 20 40 40 29 25 BVCBO (V) MIN BVCEO (V) MIN MIN MAX 90 90 250 375 500 250 325 60 60 80 80 80 100 50 40 70 60 90 80 500 350 500 500 40 60 80 80 80 100 100 275 350 400 50 90 140 60 80 60 80 60 80 90 70 50 250 325 110 130 60
1 Pages, 50 KB, Original
2N3740A Features * * PNP Silicon Power Transistors Medium-power amplifier applications With TO-66 package Maximum Ratings Symbol V CEO V CBO V EBO ICP IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Peak Collector Current Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 60 60 7.0 10 4.0 25 -55 to +150 -55 to +150 Unit V V V A A W O C O C TO-66 A E F K D Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units Collector-Emitter Breakdown Voltage* (IC=100mAdc, IB =0) Collector-Base Cutoff Current (VCB=60Vdc, IE =0) Emitter-Base Cutoff Current (VEB =7.0Vdc, IC=0) 60 --- Vdc OFF CHARACTERISTICS V (BR)CEO ICBO IEBO --- 100 uAdc --- 0.5 mAdc 40 --- --- 30 --- --- 20 --- --- 10 --- --- --- 0.6 Vdc --- 1.0 Vdc U V hFE(2) hFE(3) hFE(4) V CE(sat) V BE(sat ) fT Forward Current Transfer ratio (IC=100mAdc, V CE=1.0Vdc) Forward Current Transfer ratio (IC=250mAdc, V CE=1.0Vdc) Forward Curre
1 Pages, 95 KB, Original
2N3740A 2N3741A SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon PNP power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg 2N3740 2N3740A 60 60 ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=Rated VCEO, VBE=1.5V (2N3740, 2N3741) ICEV VCE=Rated VCEO, VBE=1.5V (2N3740A, 2N3741A) ICEV VCE=40V, VBE=1.5V, TC=150C (2N3740) ICEV VCE=40V, VBE=1.5V, TC=150C (2N3740A) ICEV VCE=60V, VBE=1.5V, TC=150C (2N3741) ICEV VCE=60V, VBE=1.5V, TC=150C (2N3741
4 Pages, 404 KB, Original
2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912 2N5427 2N5428 2N5429 2N5430 2N6312 2N6313 2N6314 2N6423 2N4898 2N4899 2N4900 2N6211 2N6212 2N6213 2N6260 2N6261 2N6263 2N6294 2N6295 2N6300 2N6301 2N6315 2N6316 2N6372 2N6373 2N6374 2N6465 2N6466 40312 CM3441 2N6297 2N6298 2N6299 2N6317 2N6318 2N5954 2N5955 2N5956 2N6424 2N6425 2N6467 2N6468 IC (A) PD (W) MAX 4.0 4.0 1.0 2.0 2.0 1.0 1.0 4.0 4.0 4.0 4.0 4.0 4.0 3.0 5.0 3.0 5.0 3.0 5.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 7.0 7.0 7.0 7.0 1.0 1.0 1.0 4.0 4.0 3.0 4.0 4.0 8.0 8.0 7.0 7.0 6.0 6.0 6.0 1.0 1.0 4.0 4.0 4.0 3.0 25 75 35 35 35 20 20 25 25 25 25 25 25 35 75 35 75 35 75 35 20 20 20 25 25 25 40 40 40 40 35 35 35 29 50 20 50 50 75 75 90 90 40 40 40 20 20 40 40 29 25 BVCBO BVCEO (V) (V) hFE @ IC (A) MIN MIN MIN MAX 90 90 250 375 500 250 325 60 60 80 80 80 100 50 40 70 60 90 80 500 350 500 500 40 60 80 80 80 100 100 275 350 400 50 90 140 60 80 60 80 60 80 90 70 50 250 325 110
3 Pages, 108 KB, Original
2N3740A APPLICATIONS: * * * Drivers Switches Medium-Power Amplifiers FEATURES: * * * * * Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 Excellent Safe Area Limits Low Collector Cutoff Current: 100 nA (Max) 2N3740A Medium Power PNP Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200 C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and
4 Pages, 43 KB, Original
2N3740A 2N3741A SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon PNP power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg 2N3740 2N3740A 60 60 ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=Rated VCEO, VBE=1.5V (2N3740, 2N3741) ICEV VCE=Rated VCEO, VBE=1.5V (2N3740A, 2N3741A) ICEV VCE=40V, VBE=1.5V, TC=150C (2N3740) ICEV VCE=40V, VBE=1.5V, TC=150C (2N3740A) ICEV VCE=60V, VBE=1.5V, TC=150C (2N3741) ICEV VCE=60V, VBE=1.5V, TC=150C (2N3741
3 Pages, 402 KB, Original
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