1N3670A SERIES 12 Amp Medium Power Silicon Rectifier Diodes Major Ratings and Characteristics Description/ Features ] 1N11998 Series 4836708 Units m = Voltage ratings from 50 to 1,000 volts - a . a Fav) : B ~~ High surge capability @MAX.T. 150 C . @ ~~ Low thermal impedance 1 + . Fm High temperature rating 60 Hz 230 " 3 > a Can be supplied as JAN and JAN-TX 60 Hz 240) . + . - devices in accordance with fey MIL-S-19500/260 @50 Hz 260 Ars @60 42 240 qT 66C* S to 200C & Verm range 50 - 1000" v JEDEC registered value. CASE STYLE AND DIMENSIONS es fal 20.32 - (0.800) : MAX. 10.28 (0.405) MAX. 41.00 (0.433) MAX. ACROSS FLATS 8.66 (0.338 DIA, MAX, we_| 281 (0.150) 5 il i TIO . ].., 219 0.088) E04 1.060} DLA. THAU 20.32 0.800 t MAK, 2.56 (0.105) 10.28 10.408) | 2AzDOY) MAX, | [Tih LI 1 Ho} rsoto.asy (98 0.078) , \ 1.30(0.445) MAK Ney i} | To79v0.425) LLL} | \ a \ wana | $77 (0.188) 11.00 (0.433) rises | torts) ' ACROSS FLATS 12.18 10.480) My aterm) ala, Conforms to JEDEC Outline DO-203AA4 (DO-4} All Dime
n 0 Tee) Heo asa | ACROSS FLATS " \ < A1510-165) | ACROSS FLATS 12.19 (0 480), M9493 (0-470) "1 DIA. Conforms to JEDEC Outline DO-203AA (DO-4) All Dimensions in Millimeters and (Inches) B-29 INTERNATIONAL RECTIFIER 4855452 [NTERNATIONAL RECTIFIER 1N1199A, 1N3670A SERIES VOLTAGE RATINGS 55 ve 4855452 00044524 - 55C 04924 INTERNATIONAL RECTIFIER T-Ol-/7 D Varn Max. Vago Max. Vp Max. Repetitive Peak Vrinos) Max. RMS Non-Reptitive Peak Direct Reverse Reverse Voltage Reverse Voltage Reverse Voltage Voltage (Vv) Vv} (V} v) Part Number) Tg = -65C to 200C To= -65C to 200C To = 0C to 200C Tg = 85C to 200C IN1199A - 50* 35* 100 50* 1N1200A 100 70 200 100 TN1201A 150 105* 300 160* 4N1202A 200 140 350 200* 1N1203A 300* 210* 450 300 1N1204A 400* 280* 600 400* 1N1205A 600* 350 700 500 1N1206A 600* 420 800 600 1N3670A 700* 490 900* 700* 1N3671A 800 560 1000* 800 1N3672A 900" 630 1100* 900* 1N3673A 1000* 700 1200* 1000* Basic part number indicates cathode-to-case. For anode-to-case, add R to part number, .9., AN
t number indicates cathode-to-case. For anode-to-case, add R" to part number, ie,, 1N1188R, 1N3766R, 1N1186RA, 1N2135RA @For 1N1183 series and 1N3765 series To = 65 to 190C. Oi? for y= PVE = Wty. * JEDEC registered values. INTERNATIONAL RECTIFIER 1N1199A, 1N3670A SERIES ELECTRICAL SPECIFICATIONS (Continued) 1N1199A 1N3670A Units Conditions IR( AV) Max. average reverse current (Continued) Veram= 400 1.5" = 500 1.25* Max. rated letay) and To = 800 1.0" | mA Note: Max. peak reverse current, Ipny, under = 700 0.9* = 800 0.8" same conditions * 2 x rated IR(AV). = 900 0.7" ~ 1000 0.6" THERMAL-MECHANICAL SPECIFICATIONS Tc Max. operating -85* case temperature to 200 9 range Tet Max. storage -65* 6 3 temperature range to 200 Rihc Max. internal thermal resistance, 2.0* deg. C/W | DC operation junction-to-case Rthcs Thermal resistance, 05 deg. C/W | Mounting surface flat, smooth, and greased. case-to-sink T Mounting torque Min. 1.36 (12) . . Torque applied to nut, Non-lubricated threads. Max. 1.69 (15) Min.
TD cons ai SEMICONDUCTORS -SEMICONDUCTEURS ee =) 8CONTENTS SOMMAIRE INHALT UNIJUNCTIONS, TRIGGER & SWITCHES UNNJONCTIONS ET DISPOSITIFS DE DECLENCHEMENT UNIJUNCTIONS, SCHALTER UND TRIGGER TRIACS TRIACS TRIACS INSIDE BACK COVER VOIR DERNEIRE PAGE INWENDIG RUCKSEITE DECKELELECTRONICS TRADING COMPANY THE DEMESNE, DUNDALK, COUNTY LOUTH, IRELAND TELEPHONE: DUNDALK 32371 TELEX: 6500 Prop., General Electric Technical Services Co., Inc. a Subsidiary of GENERAL ELECTRIC, U.S.A. Copyright 1978 GENERAL ELECTRIC COMPANY Semiconductor Products Department Electronics Park 7-49 Syracuse, New York 13221 U.S.A. PRINTED IN IRELANDType IN248 1IN249 1IN250 IN9g14 IN9144 1N914B IN916 INS1GA 1N916B 1N1183 1N1184 1N1185 1N1186 IN1187 1N1188 1N1189 1N1190 1N1195 1N1196 1N1197 1N1198 1N1199 1N1200 1N1201 1N1202 1N1203 1N1204 1N1205 1N1206 1N1341 1N1342 1N1343 1N1344 IN1345 1N1346 IN1347 1N1348 IN1612 1N1613 1N1614 IN1615 1N1616 1N2154 1N2155 1N2156 1N2157 1N2158 1N2159 1N2160 1N3208 1N3209 1N3210 1N3211 IN3212 1N3213 IN3214 1N3260 1N
Numerical Index 1N3639-1N3689 RECTIFIERS ZENER DIODES S * a = Vp Ve lo lk lure | (rnin) Vz (nom) *| Tol P = PAGE =< (volts) } (volts) | (Amps) (mA) | (Amps) Zz Vz (max) | Vz % D TYPE f= | REPLACEMENT = . . PA NUMBER | 2 x = = s 1N3639 s 1N4003 3-24 R 1N3640 8 1N4004 3-24 R 1N3641 8 1N4005 3-24 R 1N3642 S | 1N4006 3-24 R 1N3643 8 GP 1N3644 s GP 1N3645 8 GP 1N3646 8 GP 1N3647 s GP 1N3648 8 R 1N3649 8 MR1128 3-39 R 1N3650 $ MR1130 3-39 R 1N3653 8 cs 1N3654 s cs 1N3655 s Microwave S-band Mixer: 1N3655A 8 Microwave S-band Mixer: 1N3655B 8 Microwave S-band Mixer: 1N3656 s HC 1N3657 s HC 1N3658 S HC 2. 1N3659 s R 4 1N3660 Ss R 4 1N3661 S R 4 1N3662 s R 4 1N3663 s R 4 1N3664 s R 24 1N3665 s R 4 1N3666 G HC 1N3667 s R 2 1N3668 Ss HS { 1N3669 8 HS 1N3670 S | MR1128 3-39 R . 3.0 1N3670A S MR1128 3-39 R 700 1.5 12 0.9 240 1N3671 S | MR1128 3-39 R 800 2.05 12 2.0 200 1N3671A | S | MR1128 3-39 R god 1.3 12 0.8 240 1N3672 S | MR1130 3-39 R 900 2.05 12 2.0] 200 1N3672A S MR1i130 2-22 R 900 1.15 12 0.7 240 1N3673 8 MR1130 2-2
VS-1N1...A, VS-1N36..A Series www.vishay.com Vishay Semiconductors Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A FEATURES * Voltage ratings from 50 V to 1000 V * High surge capability * Low thermal impedance * High temperature rating * Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 DO-4 (DO-203AA) * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 12 A Package DO-4 (DO-203AA) Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) TC 50 Hz 60 Hz 50 Hz 60 Hz IFSM I2t TJ Range VRRM Note * JEDEC(R) registered values are in bold VALUES 12 150 230 240 260 240 -65 to +200 50 to 1000 UNITS A C A A2s C V ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE (TC = -65 C TO 200 C) V VR(RMS), MAXIMUM RMS REVERSE VOLTAGE (TC = -65 C TO 200 C) V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE (TC = -65 C TO 200 C) V VS-1
Numerical Index 1N3639-1N3689 RECTIFIERS ZENER DIODES S * a = Vp Ve lo lk lure | (rnin) Vz (nom) *| Tol P = PAGE =< (volts) } (volts) | (Amps) (mA) | (Amps) Zz Vz (max) | Vz % D TYPE f= | REPLACEMENT = . . PA NUMBER | 2 x = = s 1N3639 s 1N4003 3-24 R 1N3640 8 1N4004 3-24 R 1N3641 8 1N4005 3-24 R 1N3642 S | 1N4006 3-24 R 1N3643 8 GP 1N3644 s GP 1N3645 8 GP 1N3646 8 GP 1N3647 s GP 1N3648 8 R 1N3649 8 MR1128 3-39 R 1N3650 $ MR1130 3-39 R 1N3653 8 cs 1N3654 s cs 1N3655 s Microwave S-band Mixer: 1N3655A 8 Microwave S-band Mixer: 1N3655B 8 Microwave S-band Mixer: 1N3656 s HC 1N3657 s HC 1N3658 S HC 2. 1N3659 s R 4 1N3660 Ss R 4 1N3661 S R 4 1N3662 s R 4 1N3663 s R 4 1N3664 s R 24 1N3665 s R 4 1N3666 G HC 1N3667 s R 2 1N3668 Ss HS { 1N3669 8 HS 1N3670 S | MR1128 3-39 R . 3.0 1N3670A S MR1128 3-39 R 700 1.5 12 0.9 240 1N3671 S | MR1128 3-39 R 800 2.05 12 2.0 200 1N3671A | S | MR1128 3-39 R god 1.3 12 0.8 240 1N3672 S | MR1130 3-39 R 900 2.05 12 2.0] 200 1N3672A S MR1i130 2-22 R 900 1.15 12 0.7 240 1N3673 8 MR1130 2-2
Revised 8/27/98 www.irf.com Rectifiers / Thyristors Catalog of Availble Documents IR ProCenter Fax-On-Demand (310) 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series 1N3085 -1N3092 Series 1N3111 1N3208 - 1N3214 Series 1N3288A - 1N3296A Series 1N3670A - 1N3673A Series 1N3735 & 1N3743 Series 1N3765 thru 1N3768 Series 1N4044 - 1N4056 Series 6F(R) Series 8AF.. Series 8EWS..S Series 10ETS.. Series 10ETS..FP Series 10ETS..S Series 12F(R) Series 16F(R) Series 20ETS.. Series 20ETS..FP Series 20ETS..S Series (800 - 1600v) 25F(R) Series 30DPS.. Series 40EPS.. Series 40HF(R) Series 45L(R) Series 45L(R)..D Series 60EPS.. Series 70HF(R) Series 70U.. Series 70U..D Series (1200-1600V Difused Junction ) 80EPS.. Series 85EPS.. Series 85HF(R) Series 130HF(R) Series 150K-A, 150L-A, 150KS Series 200HF(R) Series 300HF(R) Series 300U(R).. Series 300U(R)..D Series (1200-1600V Difused Junction ) 301U(R) Series IRK(C,E,D,J)(166,19
1N1...A, 1N36..A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES * Voltage ratings from 50 to 1000 V RoHS * High surge capability COMPLIANT * Low thermal impedance * High temperature rating * Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 DO-203AA (DO-4) * RoHS compliant PRODUCT SUMMARY IF(AV) 12 A MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) VALUES TC IFSM I2 t A 150 (1) C 50 Hz 230 60 Hz 240 (1) A 50 Hz 260 60 Hz 240 - 65 to 200 C Range 50 to 1000 (1) V TC VRRM Note (1) JEDEC registered values UNITS 12 (1) A2 s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER (2) 1N1199A VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VR(RMS), MAXIMUM RMS REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VRM, MAXIMUM DIRECT REVERSE VOLTAGE V TC = - 65 C TO 200 C TC = - 65 C TO 200 C TC = - 65 C TO 200 C TC = - 65 C TO 200 C 50 (1) 35 (1) 100 (1) 50 (1) (1) 200 (1) 100 (1) 300 (1) 150 (1) 350 (1) 200 (1) 450 (1
1N1...A, 1N36..A Series www.vishay.com Vishay Semiconductors Medium Power Silicon Rectifier Diodes, 12 A FEATURES * Voltage ratings from 50 V to 1000 V * High surge capability * Low thermal impedance * High temperature rating * Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 DO-203AA (DO-4) * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY IF(AV) 12 A Package DO-203AA (DO-4) Circuit configuration Single diode MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) TC 50 Hz 60 Hz 50 Hz 60 Hz IFSM I2t TC VRRM Range Note * JEDEC registered values are in bold VALUES 12 150 230 240 260 240 - 65 to 200 50 to 1000 UNITS A C A A2s C V ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE (TC = - 65 C TO 200 C) V VR(RMS), MAXIMUM RMS REVERSE VOLTAGE (TC = - 65 C TO 200 C) V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE (TC = - 65 C TO 200 C) V 1N1199A 50 35 100 1N1200A 10
Numerical Index 1N282~-1N352 RECTIFIERS ZENER DIODES = = S Vp Ve lo Ip urge _. |Vz(nom) *) Tol = e ree | 2 | pepuacemenr | PAGE | 3 |_(olts) | (vats | (amps) | (ma) | (Amps) | Y2ml9) IE Gran] e% | Po = NUMBER = SIGNAL DIODES 2 PR | My @ ke 4 So pe Te: WB (volts) Wolts) ee ee es a 1N282 G GP fs LO OM | 20m : 1N283 G HC eae 1.0 200M 4 = 20% 1N285 UHF Mixer; NF = 12.5 dB 1N286 S }Microwave X-K band Mixer; NF = 11.3 dB 1N286A S |Microwave X-K band Mixer; NF = 11,3 dB 1N287 G HC 60 1:20: 20M 415M 1N288 G HC 85. 1.0 AOM.T 350% 1N289 G HC 85. LO 20M. SO 1N290 G GP 120 1.0 50M} 100% 1N291L G HC 120 L.0 40M 100% 1N292 G HC 7S. 10 LOOM. 200% 1N294 G GP 60. 10 50M) TO* 1N294A G GP [60 L.0 SOM to 10* 1N295 G GP 40 200% 1N295A G GP 40. 200% 1N296 G SP A: 200M. 1N297 G GP 8003p P20 3V3M 465. 10% 1N297A G GP 80 10 345M TO* 1N298 G GP 70. 2.0 30M IN298A G GP 30: 2.0 30M 250% 1N299 G SP O25 30M 200M 1N300 s GP 15 1:0 15M{0-001% 1N300A s GP is 10 3QM:|0.001* 1N300B s HC i5 PO 50M 40 .001% 1N301 S cP fl 70] 1.0 [5.0m p O.05* 1
International Rectifier Diodes V RRM Part Number (V) I @T F(AV) C (A) (C) V @ FM I FM (V) (A) I FSM 50 Hz 60 Hz (A) (A) R JC (DC) C/W Notes Fax-on-Demand D2Pak Standard Recovery D2Pak 10ETS08S 10ETS12S 800 1200 10 10 105 105 1.1 1.1 10 10 170 170 175 175 2.5 2.5 1 1 12 12 10ETS16S 20ETS08S 1600 800 10 20 105 105 1.1 1.1 10 20 170 250 175 260 2.5 1.3 1 1 12 12 82102 20ETS12S 20ETS16S 1200 1600 20 20 105 105 1.1 1.1 20 20 250 250 260 260 1.3 1.3 1 1 12 12 82102 82102 D-Pak 8EWS08S 8EWS12S 800 1200 8 8 95 95 1.1 1.1 8.0 8.0 170 170 175 175 3.0 3.0 1 1 12 12 8EWS16S 1600 8 95 1.1 8.0 170 175 3.0 1 12 TO-220AC (2-pin) 10ETS08 10ETS12 800 1200 10 10 105 105 1.1 1.1 10 10 170 170 175 175 2.5 2.5 12 12 NOTES: 1 Available on tape-and-reel 6 Io at ambient temperature 2 For Ifsm: 100% VRRM reapplied, Tj=Tj max.=150C 7 Rth is junction-to-ambient 8 Value given for RthJC is per module 3 For Irm: Tj = 150C 9 Vfm measured at Tj=25C 4 Available with 3mm and 5mm cropped leads. To specify, add suffix 'L3' for 3mm or 'L5' for 5m
Index International Rectifier Bridges V RRM Part Number (V) I O (A) @T C (C) V @ FM I FM (V) (A) I FSM 50 Hz 60 Hz (A) (A) R JC K/W I RM (A) Notes Fax-on-Demand Single Phase D-70 Schottky D-70 1BQ20 1BQ40 20 40 1 1 45 45 0.65 0.65 1 1 30 30 31 31 60 60 5 5 2 2 3 3 6 6 7 7 Diode D-71 DF005S DF01S 50 100 1 1 40 40 1 1 1 1 30 30 31 31 60 60 5 5 2 2 5 5 6 6 7 7 15 15 82788 82788 DF02S DF04S 200 400 1 1 40 40 1 1 1 1 30 30 31 31 60 60 5 5 2 2 5 5 6 6 7 7 15 15 82788 82788 DF06S DF08S 600 800 1 1 40 40 1 1 1 1 30 30 31 31 60 60 5 5 2 2 5 5 6 6 7 7 15 15 82788 82788 DF10S 1000 1 40 1 1 30 31 60 5 2 5 6 7 15 82788 Diode DF005M DF01M D-70 50 100 1 1 40 40 1 1 1 1 30 30 31 31 60 60 5 5 2 2 6 6 7 7 15 15 82788 82788 NOTES: 1 Available on tape-and-reel 6 Io at ambient temperature 2 For Ifsm: 100% VRRM reapplied, Tj=Tj max.=150C 7 Rth is junction-to-ambient 8 Value given for RthJC is per module 3 For Irm: Tj = 150C 9 Vfm measured at Tj=25C 4 Available with 3mm and 5mm cropped leads. To specify, add suffix 'L3' for 3mm or
International Rectifier Diodes V RRM Part Number (V) I @T F(AV) C (A) (C) V @ FM I FM (V) (A) I FSM 50 Hz 60 Hz (A) (A) R JC (DC) C/W Notes Fax-on-Demand D2Pak Standard Recovery D2Pak 10ETS08S 10ETS12S 800 1200 10 10 105 105 1.1 1.1 10 10 170 170 175 175 2.5 2.5 1 1 12 12 10ETS16S 20ETS08S 1600 800 10 20 105 105 1.1 1.1 10 20 170 250 175 260 2.5 1.3 1 1 12 12 82102 20ETS12S 20ETS16S 1200 1600 20 20 105 105 1.1 1.1 20 20 250 250 260 260 1.3 1.3 1 1 12 12 82102 82102 D-Pak 8EWS08S 8EWS12S 800 1200 8 8 95 95 1.1 1.1 8.0 8.0 170 170 175 175 3.0 3.0 1 1 12 12 8EWS16S 1600 8 95 1.1 8.0 170 175 3.0 1 12 TO-220AC (2-pin) 10ETS08 10ETS12 800 1200 10 10 105 105 1.1 1.1 10 10 170 170 175 175 2.5 2.5 12 12 NOTES: 1 Available on tape-and-reel 6 Io at ambient temperature 2 For Ifsm: 100% VRRM reapplied, Tj=Tj max.=150C 7 Rth is junction-to-ambient 8 Value given for RthJC is per module 3 For Irm: Tj = 150C 9 Vfm measured at Tj=25C 4 Available with 3mm and 5mm cropped leads. To specify, add suffix 'L3' for 3mm or 'L5' for 5m
1N1...A, 1N36..A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES * Voltage ratings from 50 to 1000 V RoHS * High surge capability COMPLIANT * Low thermal impedance * High temperature rating * Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 DO-203AA (DO-4) * RoHS compliant PRODUCT SUMMARY IF(AV) 12 A MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) VALUES TC IFSM I2 t A 150 (1) C 50 Hz 230 60 Hz 240 (1) A 50 Hz 260 60 Hz 240 - 65 to 200 C Range 50 to 1000 (1) V TC VRRM Note (1) JEDEC registered values UNITS 12 (1) A2 s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER (2) 1N1199A VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VR(RMS), MAXIMUM RMS REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VRM, MAXIMUM DIRECT REVERSE VOLTAGE V TC = - 65 C TO 200 C TC = - 65 C TO 200 C TC = - 65 C TO 200 C TC = - 65 C TO 200 C 50 (1) 35 (1) 100 (1) 50 (1) (1) 200 (1) 100 (1) 300 (1) 150 (1) 350 (1) 200 (1) 450 (1