STW18NM60ND N-channel 600 V - 0.25 typ., 13 A FDmeshTM II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes 3 1 VDSS @ TJmax RDS(on) max ID 650 V <0.29 13 A 3 D2PAK 1 2 STB18NM60ND TO-220FP STF18NM60ND STP18NM60ND TAB STW18NM60ND 3 1 2 2 3 * 100% avalanche tested 1 TO-220 * The worldwide best RDS(on)* area amongst the fast recovery diode devices * Low input capacitance and gate charge TO-247 * Low gate input resistance Figure 1. Internal schematic diagram ' 7$% * Extremely high dv/dt and avalanche capabilities Applications * Switching applications * Description 6 $0Y These FDmeshTM II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmeshTM technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift

STW18NM60ND N-channel 600 V - 0.25 typ., 13 A FDmeshTM II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes 3 1 VDSS @ TJmax RDS(on) max ID 650 V <0.29 13 A 3 D2PAK 1 2 STB18NM60ND TO-220FP STF18NM60ND STP18NM60ND TAB STW18NM60ND 3 1 2 2 3 * 100% avalanche tested 1 TO-220 * The worldwide best RDS(on)* area amongst the fast recovery diode devices * Low input capacitance and gate charge TO-247 * Low gate input resistance Figure 1. Internal schematic diagram ' 7$% * Extremely high dv/dt and avalanche capabilities Applications * Switching applications * Description 6 $0Y These FDmeshTM II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmeshTM technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift