STW18NM60ND N-channel 600 V - 0.25 typ., 13 A FDmeshTM II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes 3 1 VDSS @ TJmax RDS(on) max ID 650 V <0.29 13 A 3 D2PAK 1 2 STB18NM60ND TO-220FP STF18NM60ND STP18NM60ND TAB STW18NM60ND 3 1 2 2 3 * 100% avalanche tested 1 TO-220 * The worldwide best RDS(on)* area amongst the fast recovery diode devices * Low input capacitance and gate charge TO-247 * Low gate input resistance Figure 1. Internal schematic diagram ' 7$% * Extremely high dv/dt and avalanche capabilities Applications * Switching applications * Description 6 $0Y These FDmeshTM II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmeshTM technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift

STW18NM60ND N-channel 600 V - 0.25 typ., 13 A FDmeshTM II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes 3 1 VDSS @ TJmax RDS(on) max ID 650 V <0.29 13 A 3 D2PAK 1 2 STB18NM60ND TO-220FP STF18NM60ND STP18NM60ND TAB STW18NM60ND 3 1 2 2 3 * 100% avalanche tested 1 TO-220 * The worldwide best RDS(on)* area amongst the fast recovery diode devices * Low input capacitance and gate charge TO-247 * Low gate input resistance Figure 1. Internal schematic diagram ' 7$% * Extremely high dv/dt and avalanche capabilities Applications * Switching applications * Description 6 $0Y These FDmeshTM II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmeshTM technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift

STW18NM60N N-channel 600 V, 13 A, TO-220, TO-220FP, TO-247, D2PAK second generation MDmeshTM Power MOSFET Preliminary data Features RDS(on) max Type VDSS (@Tjmax) STB18NM60N 600 V < 0.285 13 A 80 W STF18NM60N 600 V < 0.285 13 A 30 W STP18NM60N 600 V < 0.285 13 A 80 W STW18NM60N 600 V < 0.285 13 A 80 W ID 100% avalanche tested Low input capacitance and gate charge Low gate input resistance PW 3 2 1 3 DPAK 1 TO-247 3 3 1 2 1 2 TO-220FP TO-220 Application Figure 1. Switching applications Internal schematic diagram Description $ MDmeshTM technology applies the benefits of the multiple drain process to STMicroelectronics' well-known PowerMESHTM horizontal layout structure. The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics. ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STB18NM60N 18NM60N DPAK Tape and reel STF18NM60N 18NM60N TO-220FP Tube STP18NM60N 18NM60N TO-220 Tube STW18NM60N 18NM60N TO-247

STW18NM60N N-channel 600 V, 0.26 typ., 13 A MDmeshTM II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet -- production data Features TAB Order codes VDSS (@Tjmax) RDS(on) max. PTOT ID 3 STB18NM60N STF18NM60N STP18NM60N 1 110 W 650 V DPAK 30 W < 0.285 13 A 3 1 2 TO-220FP TAB 110 STW18NM60N 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 2 2 3 1 TO-220 TO-247 Applications Figure 1. Switching applications Internal schematic diagram Description $ 4!" These devices are N-channel Power MOSFETs developed using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STB18NM60N 18NM60N DPAK Tape and reel STF18NM60N 18NM60N TO-220FP Tube STP18NM60N 1

STW18NM60N N-channel 600 V, 0.26 typ., 13 A MDmeshTM II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet -- production data Features TAB Order codes VDSS (@Tjmax) RDS(on) max. PTOT ID 3 STB18NM60N STF18NM60N STP18NM60N 1 110 W 650 V DPAK 30 W < 0.285 13 A 3 1 2 TO-220FP TAB 110 STW18NM60N 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 2 2 3 1 TO-220 TO-247 Applications Figure 1. Switching applications Internal schematic diagram Description $ 4!" These devices are N-channel Power MOSFETs developed using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STB18NM60N 18NM60N DPAK Tape and reel STF18NM60N 18NM60N TO-220FP Tube STP18NM60N 1

STW18NM60N N-channel 600 V, 0.27 , 13 A MDmeshTM II Power MOSFET in TO-220, TO-220FP, TO-247, D2PAK and I2PAK Features VDSS (@Tjmax) Type RDS(on) max ID PW STB18NM60N 650 V < 0.285 13 A 110 W STF18NM60N 650 V < 0.285 13 A STI18NM60N 650 V < 0.285 13 A 110 W STP18NM60N 650 V < 0.285 13 A 110 W STW18NM60N 650 V < 0.285 13 A 110 W 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 30 W 3 3 1 1 DPAK TO-247 3 12 IPAK 3 3 1 2 1 Figure 1. 2 TO-220FP TO-220 Application 2 Internal schematic diagram Switching applications $ Description This second generation of MDmeshTM technology, applies the benefits of the multiple drain process to STMicroelectronics' well-known PowerMESHTM horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics. ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STB18NM60N 18NM60N DPAK Tape and reel STF18NM60N 18NM60

STW18NM60N N-channel 600 V, 0.27 , 13 A MDmeshTM II Power MOSFET in TO-220, TO-220FP, TO-247, DPAK and IPAK Features Order codes VDSS (@Tjmax) RDS(on) max. ID PW STB18NM60N 110 W STF18NM60N 30 W STI18NM60N 650 V 2 3 3 1 1 DPAK TO-247 3 12 < 0.285 13 A STP18NM60N 110 W IPAK STW18NM60N 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 3 1 2 1 TO-220FP TO-220 Application Figure 1. 2 Internal schematic diagram Switching applications $ Description These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STB18NM60N 18NM60N DPAK Tape and reel STF18NM60N 18NM60N TO-220FP Tube STI18NM60N 18NM60N IPAK Tube STP18NM60N 18NM60N TO-220 Tu