3 820 677 659 945 937 SC-59 Case 318D-04 Page 1102 937 939 SC-70, SOT-323 Case 419-04 Page 1104 1030 Devices listed in bold italic are ON Semiconductor preferred devices. Bipolar Transistors Switching Transistors NPN MPS3646 MPS2369 MPS2369A 2N4401 2N3904 P2N2222A - PNP - - - 2N4403 2N3906 - P2N2907A V(BR)CEO 15 15 15 40 40 40 60 IC mA Max Min Max MHz Min 300 200 200 600 200 600 600 30 40 40 100 100 100 100 120 120 120 300 300 300 300 350 - - 200 250 300 200 hFE fT Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 15 Package TO-226AA, TO 226AA, TO-92 TO 92 Case 29-11 Page 1100 Page 801 793 793 40, 45 29, 35 1049 1054 Bipolar Transistors Switching Transistors NPN MMBT3904LT1 - MMBT4401LT1 - - PNP Min 40 40 40 40 12 200 200 600 600 80 40 - MMBT3906WT1 MMBT3904TT1 - IC mA Max - MMBT3906LT1 - MMBT4403LT1 MMBT3640LT1 MMBT3904WT1 - V(BR)CEO - MMBT3906TT1 hFE fT Max MHz Min Toff ns Max 100 100 100 100 30 300 300 300 300 120 200 250 250 200 500 5.0 4.0 - - 35 200 100

P2N2222A Amplifier Transistors NPN Silicon Features * These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA = 25C unless otherwise noted) Characteristic Symbol Value Unit Collector--Emitter Voltage VCEO 40 Vdc Collector--Base Voltage VCBO 75 Vdc Emitter--Base Voltage VEBO 6.0 Vdc Collector Current -- Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg --55 to +150 C Operating and Storage Junction Temperature Range 2 BASE 3 EMITTER TO--92 CASE 29 STYLE 17 Characteristic 1 12 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is

P2N2222A Amplifier Transistors NPN Silicon Features * These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA = 25C unless otherwise noted) Characteristic Symbol Value Unit Collector--Emitter Voltage VCEO 40 Vdc Collector--Base Voltage VCBO 75 Vdc Emitter--Base Voltage VEBO 6.0 Vdc Collector Current -- Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg --55 to +150 C Operating and Storage Junction Temperature Range 2 BASE 3 EMITTER 12 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 3 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect devic

T1G NTZD3155CT5G NTZS3151PT1G NTZS3151PT5G NUD3105LT1G NUF2441FCT1G NUF3101FCT1G NUP1301ML3T1 NUP1301ML3T1G NUP2105LT1 NUP2105LT1G NUP2301MW6T1G NUP4103FCT1G NZQA6V8XV5T2 PN2222AG PN2222ARLRAG PN2907AG PZTA42T1G PZT2222AT1G PZT2907AT1G PZT651T1G PZT751T1G P2N2222ARL1G P6KE150ARLG P6SMB12CAT3G P6SMB15AT3G P6SMB150AT3G P6SMB16AT3G P6SMB160AT3G P6SMB20AT3G P6SMB200AT3G P6SMB24CAT3G P6SMB33AT3G P6SMB36AT3G P6SMB36CAT3G P6SMB39AT3G P6SMB43CAT3G SA571NG SA572DR2G SD05T1G SD12T1G SG3525ANG SL05T1G SMF05CT2G SMF05T1G SMF15CT1G SM05T1G SS14T3G STF202-22T1G S74VCXH16373DTR TC74LCX125DTR2 TC74VHCT50ADTR2 TIP110G TIP111G TIP117G TIP120G TIP125G TIP29CG TIP41CG TIP42CG TIP50G TLV431ALPG TLV431ALPRAG TLV431ALPREG TLV431ASN1T1G TLV431BSNT1G TL431ACDG TL431AIDG TL431BCDMR2G TL431BIDMR2G TL431BIDR2G TL431BILPG TL431IDG TL431IDMR2G TL431IDR2G TL431ILPRAG TL494BDR2G TL494CDR2G TL494CNG TL494ING TL594CNG TMC10ELT20D TMC10ELT20DR2 TMC10ELT21D TMC10ELT21DR2 TMC10H102FN TMC10H102FNR2 TMC10H102L TMC10H102M TMC10H102MEL

rent to switch or amplify a much larger current. Identifying: Comes in many different packages but you can read the part number off the package. No. of Leads: 3 (Base, Collector, Emitter) Things to watch out for: - Plugging in the right way round (also a (P2N2222AG in this kit and find a datasheet online) Hobby Servo DC Motor 06 What it Does: Takes a timed pulse and converts it into an angular position of the output shaft. Identifying: A plastic box with 3 wires coming out one side and a shaft with a plastic horn out the top. What it Does: Spins when a current is passed through it. Identifying: This one is easy, it looks like a motor. Usually a cylinder with a shaft coming out of one end. (current will flow if end with the line is connected to ground) More Details: http://ardx.org/DIOD (double check the colors before using) More Details: http://ardx.org/RESI current limiting resistor is often needed on the base pin) More Details: http://ardx.org/TRAN No. of Leads: 3 Things to watch out for: - The

3 24 25 26 27 28 29 30 Page 11 Inventory of Parts LED (5mm) Jumper Wire x30 x5 330 Resistor x25 x5 x5 x5 * ACTUAL SIZE x1 * ACTUAL SIZE x25 Diode (1N4148) x1 * ACTUAL SIZE x2 Piezo Buzzer Photo Resistor x1 x1 Transistor (TMP36) P2N2 222A A18 Temp. Sensor (P2N2222AG) FRONT x1 DC Motor FRONT BACK x2 Push Button x1 + 10K Resistor Potentiometer Page 12 - (Light Emitting Diode) Various Colors x4 BACK Flex Sensor SparkFun RedBoard RESET x1 7-15V Soft Potentiometer 13 TX RX IOREF RESET 5V GND VIN POWER GND A0 A1 A2 A3 ISP A5 7 ~6 ~5 4 ~3 2 TX 1 RX 0 ON A4 ANALOG IN x1 DIGITAL (PWM~) LEARN. SHARE. HACK. 3.3V Servo SCL SDA AREF GND 13 12 ~11 ~10 ~9 8 x1 Breadboard Standard Solderless (Color may vary) x1 a b c d e Integrated Circuit Relay (IC) x1 x1 LCD x1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 a b c d e f g h i f g h i 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 x1 Page 13 RESET 2 1 8 7-15V 13 TX RX IOREF RESET 5V 10 VIN POWER

P2N2222A Amplifier Transistors NPN Silicon Features * These are Pb-Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA = 25C unless otherwise noted) Characteristic Symbol Value Unit Collector -Emitter Voltage VCEO 40 Vdc Collector -Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 2 BASE 3 EMITTER TO-92 CASE 29 STYLE 17 Characteristic 1 12 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not

P2N2222A Amplifier Transistors NPN Silicon Features * Pb-Free Packages are Available* http://onsemi.com MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Value Unit Collector -Emitter Voltage VCEO 40 Vdc Collector -Base Voltage VCBO 75 Vdc Emitter -Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C Characteristic Operating and Storage Junction Temperature Range COLLECTOR 1 2 BASE 3 EMITTER MARKING DIAGRAM P2N2 222A AYWW G G 1 THERMAL CHARACTERISTICS Characteristic 2 Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended

P2N2222A NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current -- Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 -- Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 75 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 -- Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(

P2N2222A NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current -- Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 -- Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 75 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 6.0 -- Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(

3 820 677 659 945 937 SC-59 Case 318D-04 Page 1102 937 939 SC-70, SOT-323 Case 419-04 Page 1104 1030 Devices listed in bold italic are ON Semiconductor preferred devices. Bipolar Transistors Switching Transistors NPN MPS3646 MPS2369 MPS2369A 2N4401 2N3904 P2N2222A - PNP - - - 2N4403 2N3906 - P2N2907A V(BR)CEO 15 15 15 40 40 40 60 IC mA Max Min Max MHz Min 300 200 200 600 200 600 600 30 40 40 100 100 100 100 120 120 120 300 300 300 300 350 - - 200 250 300 200 hFE fT Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 15 Package TO-226AA, TO 226AA, TO-92 TO 92 Case 29-11 Page 1100 Page 801 793 793 40, 45 29, 35 1049 1054 Bipolar Transistors Switching Transistors NPN MMBT3904LT1 - MMBT4401LT1 - - PNP Min 40 40 40 40 12 200 200 600 600 80 40 - MMBT3906WT1 MMBT3904TT1 - IC mA Max - MMBT3906LT1 - MMBT4403LT1 MMBT3640LT1 MMBT3904WT1 - V(BR)CEO - MMBT3906TT1 hFE fT Max MHz Min Toff ns Max 100 100 100 100 30 300 300 300 300 120 200 250 250 200 500 5.0 4.0 - - 35 200 100

P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vde CollectorBase Voltage VcBO 75 Vde CASE 29-04, STYLE 17 Emitter~Base Voltage VEBO 6.0 Vde TO-92 (TO-226AA) Collector Current - Continuous Ic 600 mAde Total Device Dissipation @ Ta = 25C Pp 625 mw Derate above 25C 5.0 mw Total Device Dissipation @ To = 25C Pp 1.5 Watts Derate above 25C 12 mw/c Operating and Storage Junction Ty: Tstg ~55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient Raga 200 C/W Thermal Resistance, Junction to Case Rec 83.3 C/W ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic Symbol | Min Max | Unit | OFF CHARACTERISTICS Collector- Emitter Breakdown Voltage V(BR)CEO 40 _ Vde {ig = 10 mAdc, Ip = 0) CollectorBase Breakdown Voltage V(BR)CBO 75 _ Vde (ig = 10 pAdc, IE = 0) Emitter~Base Breakdown Voitage V(BR)EBO 6.0 _ Vde (IE = 10 pAde, Io = 0) Collector Cutoff Current I

are special product ranges intended for use in telecom applications. Device Type V(BR)CEO Volts PD mW 25C Amb hFE @ IC @ VCE fT IC mA Cont Min Max mA Volts MHz Min Style 600 75 -- 10 10 300 17 600 100 -- 10 10 200 17 Case 29-04 -- TO-226AA (TO-92) -- NPN P2N2222A 40 625 Case 29-04 -- TO-226AA (TO-92) -- PNP P2N2907A 60 625 (1) Typical Devices listed in bold, italic are Motorola preferred devices. Motorola Small-Signal Transistors, FETs and Diodes Device Data Selector Guide 1-7 Plastic-Encapsulated Multiple Transistors The manufacturing trend has been toward printed circuit board design with requirements for smaller packages with more functions. In the case of discrete components the use of the multiple device package helps to reduce board space requirements and assembly costs. Many of the most popular devices are offered in the standard plastic DIP and surface mount IC packages. This includes small-signal NPN and PNP bipolar transistors, N-channel and P-channel FETs, as well as diode arrays. 14

P2N2222A Amplifier Transistors NPN Silicon Features * Pb-Free Packages are Available* http://onsemi.com MAXIMUM RATINGS (TA = 25C unless otherwise noted) Characteristic Symbol Value Unit Collector -Emitter Voltage VCEO 40 Vdc Collector -Base Voltage VCBO 75 Vdc Emitter -Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 2 BASE 3 EMITTER MARKING DIAGRAM 1 THERMAL CHARACTERISTICS Characteristic COLLECTOR 1 Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions

P2N2222A/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO 40 Vdc Collector - Base Voltage VCBO 75 Vdc Emitter - Base Voltage VEBO 6.0 Vdc Collector Current -- Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg - 55 to +150 C Symbol Max Unit Operating and Storage Junction Temperature Range 1 2 3 CASE 29-04, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector - Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 -- Vdc Collector - Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 75 -- Vdc Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 --