BDV65B BDV65B 3-324 BOW63 BDX53 3-338 BOV65C BOV65B 3-324 BDW63A BDX53A 3-338 BDV66C MJH11018 3-1034 BDW63B BDX53B 3-338 BDVE66C MJH11017 3-1034 BDW63C BDX53C 3-338 BDV6ED MJH11019 3-1034 BDW63D BDX53D 3-338 BDV67D MJH11020 3-1034 BDWw4 BDX54 3-338 BOV91 MJE3055T 3-904 BDW64A BDX54A 3-338 BDV92 TIP34B 3-1077 BDW64B BDX54B 3-338 BDV93 TIP34C 3-1077 BOW64C BOX54C 3-338 BDV94 TIP2955 3-1108 BDW73 BD895 3-320 BDV95 TIP33B 31077 BOW73A 8D897 3-320 BOV9E TIP33C 3-1077 BDW73B BD899 3-320 BDW21 2N3714 3-26 BDW73C BD901 3-320 BOW21A 2N3714 3-26 BDW73D BDX33D 3-334 BOW21B 2N3714 3-26 BOW?74 BD896 3.322 BDW21C 2N5882 3-123 BDW74A BD898 3-322 BDW22 2N3789 3-56 BDW74B BD900 3-322 BDW22A 2N3789 3-56 BDW74C BD902 3-322 BDW22B 2N3790 3-56 BDW74D BDX34D 3-334 BDW22C 2N5880 3-123 BDW83 BDV65 3-324 BDW23 BDX53 3-338 BDW83A BOVES 3-324 BDW23A BDX53A 3-338 BOW83B BDVE5A 3-324 BOW23B BDX53B 3-338 BDW83C BDV65B 3-324 BOW23C BDX53C 3-338 BDW84 BDVE4 3-324 BDW24 BDX54 3-338 BDW84A BDV64 3-324 BDW24A BDX54A 3-338 Bows4B

E2955T 3-904 MJE2091 TIP125 3-1098 MJE29A TIP29A 3-1071 MJE2092 TIP126 3-1098 MJE29B TIP29B 3-1071 MJE2093 TIP126 3-1098 MJE29C TIP29C 3-1071 MJE210 MJE210 3-866 MJE30 TIP30 3-1071 MJE2100 TIP120 3-1098 MJE3055 MJE3055 3-904 MJE2101 TIP120 3-1098 MJE3055K MJE3055T 3-904 MJE2102 TIP121 3-1098 MJE3055T MJE3055T 3-904 MJE2103 TIP121 3-1098 MJE30A TIP30A 3-1071 MJE2150 MJE210 3-866 MJE30B TIP30B 3-1071 MJE2160 TIP48 3-1087 MJE30C TIP30C 3-1071 MJE220 MJE181 3-862 MJE31 TIP3t 3-1073 MJE221 MJE181 3-862 MJESIA TIP31A 3-1073 MJE222 MJE181 3-862 MJE31B TIP31B 3-1073 MJE223 MJE182 3-862 MJESIC TIP31C 3-1073 MJE224 MJE182 3-862 MJE32 TIP32 3-1073 MJE225 MJE182 3-862 MJE32A, TIP32A 3-1073 MJE230 MJE174 3-862 MJE32B TIP32B 3-1073 MJE231 MJE171 3-862 MJE32C THP32C 3-1073 MJE232 MJE174 3-862 MJE33 TiP41 3-1083 MJE233 MJE+72 3-862 MJE3300 2N6037 3-135 MJE234 MJE172 3-862 MJE3301 2N6038 3-135 MJE235 MJE172 3-862 MJE3302 2N6039 3-135 MJE2360 MJE2360T 3-900 MJE3310 2N6034 3-135 MJE2360T M

E2955T 3-904 MJE2091 TIP125 3-1098 MJE29A TIP29A 3-1071 MJE2092 TIP126 3-1098 MJE29B TIP29B 3-1071 MJE2093 TIP126 3-1098 MJE29C TIP29C 3-1071 MJE210 MJE210 3-866 MJE30 TIP30 3-1071 MJE2100 TIP120 3-1098 MJE3055 MJE3055 3-904 MJE2101 TIP120 3-1098 MJE3055K MJE3055T 3-904 MJE2102 TIP121 3-1098 MJE3055T MJE3055T 3-904 MJE2103 TIP121 3-1098 MJE30A TIP30A 3-1071 MJE2150 MJE210 3-866 MJE30B TIP30B 3-1071 MJE2160 TIP48 3-1087 MJE30C TIP30C 3-1071 MJE220 MJE181 3-862 MJE31 TIP3t 3-1073 MJE221 MJE181 3-862 MJESIA TIP31A 3-1073 MJE222 MJE181 3-862 MJE31B TIP31B 3-1073 MJE223 MJE182 3-862 MJESIC TIP31C 3-1073 MJE224 MJE182 3-862 MJE32 TIP32 3-1073 MJE225 MJE182 3-862 MJE32A, TIP32A 3-1073 MJE230 MJE174 3-862 MJE32B TIP32B 3-1073 MJE231 MJE171 3-862 MJE32C THP32C 3-1073 MJE232 MJE174 3-862 MJE33 TiP41 3-1083 MJE233 MJE+72 3-862 MJE3300 2N6037 3-135 MJE234 MJE172 3-862 MJE3301 2N6038 3-135 MJE235 MJE172 3-862 MJE3302 2N6039 3-135 MJE2360 MJE2360T 3-900 MJE3310 2N6034 3-135 MJE2360T M

MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS - 75 WATTS * High Current Gain - Bandwidth Product * These Devices are Pb-Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit VCEO 60 Vdc Collector-Base Voltage VCB 70 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 10 Adc Base Current IB 6.0 Adc 75 0.6 W W/C -55 to +150 C Collector-Emitter Voltage Total Device Dissipation @ TC = 25C Derate above 25C PD (Note 1) Operating and Storage Junction Temperature Range TJ, Tstg www.onsemi.com PNP NPN COLLECTOR 2, 4 COLLECTOR 2, 4 1 BASE 1 BASE EMITTER 3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Safe Area Curves are indicated by Figure 1

MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general-purpose amplifier and switching applications. *Motorola Preferred Device * DC Current Gain Specified to 10 Amperes * High Current Gain -- Bandwidth Product -- fT = 2.0 MHz (Min) @ IC = 500 mAdc IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value Unit VCEO 60 Vdc Collector-Base Voltage VCB 70 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 10 Adc Base Current IB 6.0 Adc PD 75 Watt

MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Valu e Unit V CEO Collector-Emitter Voltage (I B = 0) 60 V V CBO Collector-Base Voltage (IE = 0) 70 V V EBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 10 A IB Base Current 6 A T otal Power Dissipation at T case 25 oC 75 P tot T s tg Tj Parameter Storage Temperature Max. O perating Junction Temperature W -55 to 150 o C 150 o C For PNP types voltage and current values are negative. October 1995 1/4 MJE2955T-MJE3055T THERMAL DATA R thj -ca se Thermal Resistance Junction-case Max o 1.66 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l Parameter T est Con ditio ns Min . T y

Max tf s Max hFE Min/Max @ IC Amp BUL147 14/34 1.0 2.5 (Note 14.) MJE18008 16/34 1.0 2.75 (Note 14.) 40 min 4.0 NPN PNP PD (Case) Watts Page @ 25C @ IC Amp fT MHz Min 0.18 (Note 14.) 2.0 14 typ 125 272 0.18 (Note 14.) 2.0 13 typ 125 538 50 320 D44H8 D45H8 MJE3055T MJE2955T 20/70 4.0 75 560 2N6387 (Note 13.) 2N6667 (Note 13.) 1k/20k 5.0 20 (Note 12.) 65 121, 137 BDX33B (Note 13.) BDX34B (Note 13.) 750 min 3.0 3.0 70 197 BD809 BD810 15 min 4.0 1.5 90 183 2N6388 (Note 13.) 2N6668 (Note 13.) 1k/20k 5.0 20 (Note 12.) 65 121, 137 D44H10 D45H10 20 min 4.0 0.5 typ 0.14 typ 5.0 50 typ 50 316 D44H11 D45H11 40 min 4.0 0.5 typ 0.14 typ 5.0 50 typ 50 316 100 BDX33C (Note 13.) BDX34C (Note 13.) 750 min 3.0 3.0 70 197 12 400/700 MJE13009 6/30 8.0 3.0 0.7 8.0 4.0 100 483 15 60 2N6487 2N6490 20/150 5.0 0.6 typ 0.3 typ 5.0 5.0 75 127 80 2N6488 2N6491 20/150 5.0 0.6 typ 0.3 typ 5.0 5.0 75 127 D44VH10 D45VH10 20 min 4.0 0.5 0.09 8.0 50 typ 83 318 BDW42 (Note 13.) BDW47 (Note 13.) 1k min 5.0 1.0 typ 1.5 typ 5.0 4.0 8

MJE3055T (NPN) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS - 75 WATTS *DC Current Gain Specified to 10 A *High Current Gain - Bandwidth Product fT = 2.0 MHz (Min) @ IC = 500 mAdc *Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit VCEO 60 Vdc Collector-Base Voltage VCB 70 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 10 Adc Base Current IB 6.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD (Note 1) 75 0.6 W W/C Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 C Symbol Max Unit qJC 1.67 C/W Collector-Emitter Voltage 1 2 TO-220AB CASE 221A-09 STYLE 1 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional op

MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS - 75 WATTS * DC Current Gain Specified to 10 A * High Current Gain - Bandwidth Product - * http://onsemi.com fT = 2.0 MHz (Min) @ IC = 500 mAdc Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit VCEO 60 Vdc Collector-Base Voltage VCB 70 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 10 Adc Base Current IB 6.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD (Note 1) 75 0.6 W W/C Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 C Symbol Max Unit qJC 1.67 C/W Collector-Emitter Voltage TO-220AB CASE 221A-09 STYLE 1 1 2 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functio

MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS - 75 WATTS * DC Current Gain Specified to 10 A * High Current Gain - Bandwidth Product - * http://onsemi.com fT = 2.0 MHz (Min) @ IC = 500 mAdc Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit VCEO 60 Vdc Collector-Base Voltage VCB 70 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 10 Adc Base Current IB 6.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD (Note 1) 75 0.6 W W/C Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 C Symbol Max Unit qJC 1.67 C/W Collector-Emitter Voltage TO-220AB CASE 221A-09 STYLE 1 1 2 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functio

MJE3055T (NPN) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. Features http://onsemi.com 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS - 75 WATTS *DC Current Gain Specified to 10 A *High Current Gain - Bandwidth Product fT = 2.0 MHz (Min) @ IC = 500 mAdc *Pb-Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit VCEO 60 Vdc Collector-Base Voltage VCB 70 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 10 Adc Base Current IB 6.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD (Note 1) 75 0.6 W W/C Operating and Storage Junction Temperature Range TJ, Tstg -55 to +150 C Symbol Max Unit qJC 1.67 C/W Collector-Emitter Voltage 1 2 TO-220AB CASE 221A-09 STYLE 1 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings o

MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general-purpose amplifier and switching applications. *ON Semiconductor Preferred Device * DC Current Gain Specified to 10 Amperes * High Current Gain -- Bandwidth Product -- fT = 2.0 MHz (Min) @ IC = 500 mAdc IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III MAXIMUM RATINGS Rating Symbol Value Unit VCEO 60 Vdc Collector-Emitter Voltage Collector-Base Voltage VCB 70 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 10 Adc Base Current IB 6.0 Adc PD

MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS - 75 WATTS * High Current Gain - Bandwidth Product * These Devices are Pb-Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit VCEO 60 Vdc Collector-Base Voltage VCB 70 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 10 Adc Base Current IB 6.0 Adc 75 0.6 W W/C -55 to +150 C Collector-Emitter Voltage Total Device Dissipation @ TC = 25C Derate above 25C PD (Note 1) Operating and Storage Junction Temperature Range TJ, Tstg www.onsemi.com PNP NPN COLLECTOR 2, 4 COLLECTOR 2, 4 1 BASE 1 BASE EMITTER 3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Safe Area Curves are indicated by Figure 1

MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS - 75 WATTS * High Current Gain - Bandwidth Product * These Devices are Pb-Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit VCEO 60 Vdc Collector-Base Voltage VCB 70 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 10 Adc Base Current IB 6.0 Adc 75 0.6 W W/C -55 to +150 C Collector-Emitter Voltage Total Device Dissipation @ TC = 25C Derate above 25C PD (Note 1) Operating and Storage Junction Temperature Range TJ, Tstg www.onsemi.com PNP NPN COLLECTOR 2, 4 COLLECTOR 2, 4 1 BASE 1 BASE EMITTER 3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Safe Area Curves are indicated by Figure 1

OROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE2955T/D Complementary Silicon Plastic Power Transistors . .. designed for use in general-purpose amplifier and switching applications. e DC Current Gain Specified to 10 Amperes PNP MJE2955T* NPN MJE3055T * *Motorola Preferred Device e High Current Gain Bandwidth Product 10 AMPERE fT = 2.0 MHz (Min) @ Ic = 500 mAdc COMPLEMENTARY SILICON MAXIMUM RATINGS POWER TRANSISTORS Rating Symbol Value Unit 60 VOLTS 75 WATTS Collector-Emitter Voltage VCEO 60 Vde CollectorBase Voltage VCB 70 Vde Emitter-Base Voltage VEB 5.0 Vde \ Collector Current Ic 10 Adc /) Base Current IB 6.0 Adc Total Power Dissipation @ Tc = 25C Ppt 75 Watts Derate above 25C } MJE3055T, MJE2955T 0.6 wit Operating and Storage Junction TJ: Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS CASE 221A-06 TO220AB Characteristic Symbol Max Unit Thermal Resistance, Junction to Case 98JC 1.67 C/W +Safe Area Curves are indicated by Figure 1. Both limits are applicab