MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. www.onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS Features * * * * * * * Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard-Ring for Stress Protection NRVBS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable* These Devices are Pb-Free, Halogen Free/BF

MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360BNT3 www.onsemi.com This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Features * * * * * * * Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard-Ring for Stress Protection NRVBS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable* These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics * * * * SMC 2-LEAD

MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS Features * * * * * * * Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard-Ring for Stress Protection NRVBS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These are Pb-Free Devices Mechanical Cha

MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. www.onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS Features * * * * * * * Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard-Ring for Stress Protection NRVBS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable* These Devices are Pb-Free, Halogen Free/BF

MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. www.onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS Features * * * * * * * Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard-Ring for Stress Protection NRVBS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable* These Devices are Pb-Free, Halogen Free/BF

.5 -- 0.5 -- 0.5 0.5 0.1 4 SMC SMC SMC SMC SMA SMC D-PAK SMC SMC D-PAK SMC SMC SMC SMC SMC SMC MC MC MC ON VISH VISH ON MC VISH ON VISH ON MC GS MC GS SS32 SS33 SS34 MBRS340T3G 15MQ040NPBF 30BQ040TRPBF MBRD640CTT4G SS35 30BQ060PBF MBRD360T4G MBRS360TR.PBF MBRS360T3G SS36 SS36 SS39 SS3H10 3.3 3.3 40 60 0.53 0.61 3 3 D-PAK D-PAK VISH VISH 6CWQ04FNPBF 6CWQ06FNPBF 5 35 0.47 -- D-PAK ON Mftrs. List No. MCL4148 TMBAT49FILM SS15 SS19 10BQ015PBF MBRA120TRPBF MBRM120LT1G LL5817 SS12 LL5818 STPS1L30UPBF MBRA130LT3G 10BQ030PBF MBRS130LT3G SS13 LL5819 TMBYV10-40FILM MBRA140T3G SS14 SS14 2 MBRD1035CTLG Price Each Mftrs. List No. Mftr. Case Style Order Code 1+ 25+ 100+ 250+ BYM13-40 BYS10/45 VISHDO-213AB TFK SMB MBRA120TRPBF MBRA130LT3G MBRA140T3G MBRA140PBF MBRD360T4G MBRD640CTT4G MBRD1035CTLG MBRM120LT1G MBRS130LT3G MBRS140PBF MBRS1100T3G MBRS140T3G MBRS340T3G MBRS360T3G MBRS360TR.PBF MBRS140T3G MBRS340T3G SL12 SL13 SL22. SL23 SS110 SS14 SS14 SS16 SS16 SS1H10 SS23 SS24 SS26 SS34 VISHSMA ON SMA O

GA GXB REGULATORS HAVE PRIORITY USE PROPER THERMAL RELIEF ON LAYOUT C6 1UF ADP3339AKCZ-3.3-RL DGND DGND +1.8VD U16 LP38842S-1.2 2 5 1 BIAS OUT 4 +1.2VGXB C SD_N C718 GND .1UF C106 C716 10UF C E9 GRN 1 IN 22UF 3 4 6 5 U8 3 (GREEN) C50 1000PF 2 C C49 1000PF MBRS360T3G 1 LNJ308G8TRA MBRS360T3G 5.1V F701 2 D7 PJ-202A 1 2 3 S1 1 D 1 1 J4 1 MBRS360T3G D701 D702 D703 A C A C A C 2.5A 1 6V, 3 6 U7 NDT456P 1 L2 N R701 ZHCS2000TA R59 100K .1UF C720 10UF GND 3 6 DGND C1 470PF 2 5 1 A1 IN OUT GND NC 1 IN OUT BIAS E711 GRN 4 L703 1 2 +1.2VPLL B SD_N GND .1UF C723 C722 10UF B 3 U708 LP38842S-1.2 DGND 3 6 220OHM .1UF C21 68PF +1.2VD DGND 25.5K DGND OUT SD_N C725 2 80.6K 4 BIAS E710 GRN 4 22UF COMP GND DGND 3 1 IN C724 CS 6 1 2 5 1 C719 IN PGATE FB R53 DGND U17 5 3 4 DGND 1 2 5 6 C51 47UF 22UF G N ADP1864AUJZ-R7 R54 0.04 U707 LP38842S-1.2 P 1 C52 10UF DGND +1.8VD 3.6UH D5 P E3 GRN 2 C721 4 2 3 S D 1 DGND 2 C94 1 4 1UF +1.2VPLL C95 1UF ADP3339AKCZ-1.8-RL DGND DGND C731 .1UF TSW-103-08-G-

9.492 258.76) R0 Part Name Capacitors KIT33812EKEVBE Evaluation Board, Rev. 2.0 16 Freescale Semiconductor KIT33812EKEVBE Bill of Material Part Name Location Orienta Qty tion Value Package Mfr. Mfr. Part # Digi-Key Part # D1 MBRS360T3 SMC ON Semiconductor MBRS360T3G MBRS360T3GOSCT-ND (684.646 2468.898) R180 1 D2 SMBJ40 DO214AA Little Fuse SMBJ40A SMBJ40ALFCT-ND (673.228 2243.622) R180 1 D4 S1GB-13 DO214AA Diodes, Inc. S1GB-13-F S1GB-FDICT-ND (3366.72 1850.402) R180 3 D5 S1GB-13 DO214AA Diodes, Inc. S1GB-13-F S1GB-FDICT-ND (3320.437 1026.295) R180 D6 S1GB-13 DO214AA Diodes, Inc. S1GB-13-F S1GB-FDICT-ND (3788.433 396.815) R180 D7 SS12 DO214AC Vishay/General SS12-E3/51T Semi. SS12-E3/51TGI-ND (2892.591 1208.165) R0 1 Diodes D8 SMBJ24A DO214AA Little Fuse SMBJ24A SMBJ24ALFCT-ND (2652.594 1075.378) R90 1 +5V_LED Green LED CHIPLED_0805 Panasonic LNJ306G5PRX P11493CT-ND (1548.839 2062.543) R270 12 IGNFLT_LED Green LED CHIPLED_0805 Panasonic LNJ306G5PRX P11493CT-ND (811.244 356.508) R90 IGNI

9.492 258.76) R0 Part Name Capacitors KIT33812EKEVBE Evaluation Board, Rev. 2.0 16 Freescale Semiconductor KIT33812EKEVBE Bill of Material Part Name Location Orienta Qty tion Value Package Mfr. Mfr. Part # Digi-Key Part # D1 MBRS360T3 SMC ON Semiconductor MBRS360T3G MBRS360T3GOSCT-ND (684.646 2468.898) R180 1 D2 SMBJ40 DO214AA Little Fuse SMBJ40A SMBJ40ALFCT-ND (673.228 2243.622) R180 1 D4 S1GB-13 DO214AA Diodes, Inc. S1GB-13-F S1GB-FDICT-ND (3366.72 1850.402) R180 3 D5 S1GB-13 DO214AA Diodes, Inc. S1GB-13-F S1GB-FDICT-ND (3320.437 1026.295) R180 D6 S1GB-13 DO214AA Diodes, Inc. S1GB-13-F S1GB-FDICT-ND (3788.433 396.815) R180 D7 SS12 DO214AC Vishay/General SS12-E3/51T Semi. SS12-E3/51TGI-ND (2892.591 1208.165) R0 1 Diodes D8 SMBJ24A DO214AA Little Fuse SMBJ24A SMBJ24ALFCT-ND (2652.594 1075.378) R90 1 +5V_LED Green LED CHIPLED_0805 Panasonic LNJ306G5PRX P11493CT-ND (1548.839 2062.543) R270 12 IGNFLT_LED Green LED CHIPLED_0805 Panasonic LNJ306G5PRX P11493CT-ND (811.244 356.508) R90 IGNI

40P2T5G 863-NSR0230P2T5G 863-MBR0520LT1G 863-MBR0530T1G 863-MBR0540T1G 863-MBR2030CTLG 863-MBRB1545CTT4G 863-MBRB20200CTT4G 863-MBRB2535CTLT4G 863-MBRD1035CTLG 863-MBRD320T4G 863-MBRD330T4G 863-MBRD360T4G 863-MBRD835LT4G 863-MBRS230LT3G 863-MBRS340T3G 863-MBRS360T3G 863-MBRS540T3G 863-MMBD101LT1G 863-MMBD352LT1G 863-MMBD354LT1G 863-MBR2515LG 863-MBR4015LWTG 863-MBR120VLSFT1G 863-1N5817G 863-MBR120LSFT1G 863-1N5820G 863-MBR120ESFT1G 863-MBRS120T3G 863-NSR0320MW2T1G 863-NSR0320XV6T1G 863-BAT54CWT1G 863-BAT54SWT1G 863-BAT54WT1G 863-BAT54CTT1G 863-BAT54T1G 863-BAT54HT1G 863-BAT54XV2T1G 863-BAT54SLT1G 863-NSR30CM3T5G 863-RB751V40T1G 863-MBR130LSFT1G 863-MBRS130LT3G 863-MMSD301T1G 863-MMBD301LT1G 863-1N5821G 863-1N5818G 863-MBR2030CTLG 863-MBRS130T3G 863-MBR2535CTLG 863-MBRD835LG 863-1N5822G 863-MBR140SFT1G 863-MBR340G 863-1N5819G 863-MBRS140T3G 863-80SQ045NG 863-MBR1645G 863-MBR6045PTG 863-MBR6045WTG 863-MBR3045PTG 863-MBR4045PTG 863-MBRB2545CTG 863-MBR2545CTG 863-MBRB1045T4G 863-MBRB1545CTG 863-MBR10

C 0.47F T1 1,2,3 (SERIES) 105k 1% M1 SENSE RT SS 63.4k 200kHz VOUT 12V 1.2A 10nF 1N4148 CVCC 4.7F 10V X5R 5.1 15.8k 1% 0.030 COUT 47F X5R 3758 TA03a CIN: MURATA GRM32ER72A225KA35L T1: COILTRONICS VP2-0066 M1: VISHAY SILICONIX SI4848DY D1: ON SEMICONDUCTOR MBRS360T3G DSN: VISHAY SILICONIX ES1D COUT: MURATA GRM32ER61C476ME15L Efficiency vs Output Current 100 90 Start-Up Waveform VIN = 48V VIN = 48V EFFICIENCY (%) 80 70 60 VOUT 5V/DIV 50 40 30 20 0.01 5ms/DIV 0.1 1 OUTPUT CURRENT (A) 3758 TA03c 10 3758 TA03b Frequency Foldback Waveforms When Output Short-Circuit VIN = 48V VOUT 5V/DIV VSW 50V/DIV 20s/DIV 3758 TA03d 3758afd 28 LT3758/LT3758A Typical Applications VFD (Vacuum Fluorescent Display) Flyback Power Supply D1 VIN 9V TO 16V COUT2 2.2F 100V X7R 4 CIN 22F 25V D2 178k 22 SHDN/UVLO 220pF 32.4k SYNC LT3758 47pF 95.3k GATE VOUT2 64V 40mA COUT1 1F 100V X7R 6 FBX GND INTVCC VC 0.47F 5 M1 SW SENSE RT SS 63.4k 200kHz T1 1, 2, 3 VIN VOUT 96V 80mA 10k 10nF CVCC 4.7F 10V X5R 0.019 0.5W 1.62k 3758 TA04a CIN

Junction Temperature (Note 1) TJ - 65 to +175 C April, 2007 - Rev. 4 AYWW B36G G B36 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MBRS360T3 MBRS360T3G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. (c) Semiconductor Components Industries, LLC, 2007 MARKING DIAGRAM 1 Package Shipping SMC 2500/Tape & Reel SMC (Pb-Free) 2500/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices f

M1 SENSE RT SS 63.4k 200kHz T1 1,2,3 (SERIES) SW LT3758 SYNC VOUT 12V 1.2A 10nF 1N4148 CVCC 4.7F 10V X5R 5.1 15.8k 1% 0.030 COUT 47F X5R 3758 TA03a CIN: MURATA GRM32ER72A225KA35L T1: COILTRONICS VP2-0066 M1: VISHAY SILICONIX SI4848DY D1: ON SEMICONDUCTOR MBRS360T3G DSN: VISHAY SILICONIX ES1D COUT: MURATA GRM32ER61C476ME15L Efficiency vs Output Current Start-Up Waveform 100 VIN = 48V VIN = 48V 90 EFFICIENCY (%) 80 70 60 VOUT 5V/DIV 50 40 30 20 0.01 5ms/DIV 0.1 1 OUTPUT CURRENT (A) 3758 TA03c 10 3758 TA03b Frequency Foldback Waveforms When Output Short-Circuit VIN = 48V VOUT 5V/DIV VSW 50V/DIV 20s/DIV 3758 TA03d 3758fb 28 LT3758 TYPICAL APPLICATIONS VFD (Vacuum Fluorescent Display) Flyback Power Supply D1 COUT2 2.2F 100V X7R 4 VIN 9V TO 16V CIN 22F 25V D2 178k T1 1, 2, 3 VIN 22 SHDN/UVLO 5 220pF 32.4k SYNC 95.3k M1 SW LT3758 VOUT 96V 80mA VOUT2 64V 40mA COUT1 1F 100V X7R GATE 6 SENSE RT SS FBX GND INTVCC VC 0.47F 63.4k 200kHz 47pF 10k 10nF CVCC 4.7F 10V X5R 0.019 0.5W 1.62k 3758 TA04a CIN: MURATA

k 100pF T1 1,2,3 (SERIES) 105k 1% M1 SENSE RT SS 63.4k 200kHz VOUT 12V 1.2A 10nF 1N4148 CVCC 4.7F 10V X5R 5.1 15.8k 1% 0.030 COUT 47F X5R 3758 TA03a CIN: MURATA GRM32ER72A225KA35L T1: COILTRONICS VP2-0066 M1: VISHAY SILICONIX SI4848DY D1: ON SEMICONDUCTOR MBRS360T3G DSN: VISHAY SILICONIX ES1D COUT: MURATA GRM32ER61C476ME15L Efficiency vs Output Current 100 90 Start-Up Waveform VIN = 48V VIN = 48V EFFICIENCY (%) 80 70 60 VOUT 5V/DIV 50 40 30 20 0.01 5ms/DIV 0.1 1 OUTPUT CURRENT (A) 3758 TA03c 10 3758 TA03b Frequency Foldback Waveforms When Output Short-Circuit VIN = 48V VOUT 5V/DIV VSW 50V/DIV 20s/DIV 3758 TA03d 3758fa 28 LT3758 Typical Applications VFD (Vacuum Fluorescent Display) Flyback Power Supply D1 VIN 9V TO 16V COUT2 2.2F 100V X7R 4 CIN 22F 25V D2 178k 22 SHDN/UVLO 220pF 32.4k SYNC LT3758 47pF 95.3k GATE VOUT2 64V 40mA COUT1 1F 100V X7R 6 FBX GND INTVCC VC 0.47F 5 M1 SW SENSE RT SS 63.4k 200kHz T1 1, 2, 3 VIN VOUT 96V 80mA 10k 10nF CVCC 4.7F 10V X5R 0.019 0.5W 1.62k 3758 TA04a CIN: MURATA

External Surfaces Corrosion Resistant and Terminal B36 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping MBRS360T3 SMC 2500/Tape & Reel MBRS360T3G SMC (Pb-Free) 2500/Tape & Reel MBRS360BT3G SMB (Pb-Free) 2500/Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. (c) Semiconductor C