JAN2N2222 Datasheet Full Text - Datasheet & Application Note

NTXV2N2219A JANTXV2N2219A 251 JANS2N2219AJANS2N2219A 251 JANSR2N2219A JANSR2N2219A 251 JAN2N2219ALJAN2N2219AL 251 JANTX2N2219AL JANTX2N2219AL 251 2N2219AL JANTXV2219AL 2N2219AL JANTXV2219AL 251 JANS2N2219AL JANS2N2219AL 251 JANSR2N2219AL JANSR2N2219AL 255 JAN2N2222A JAN2N2222A 255 JANTX2N2222A JANTX2N2222A 255 2N2222A JANTXV2N2222A 2N2222A JANTXV2N2222A 255 JANS2N2222AJANS2N2222A 255 JANSR2N2222A JANSR2N2222A Slash Die-Size Sheet Die-Size QPL Die LevelQPL DiePackage Level Package Type VEBO VEBO Power Rtja PowerTstg/Top Rtja Tstg/Top VCE(sat) VCE(sat) Type VCEO Rad Hard Rad(V) Hard VCBO VCEO (V) (V) VCBO (V)IC (A) IC (A) Max HFE Max HFE (V) (V) (W) Ta (C/W) (W) Ta (C) (C/W) (C) (V) (V) 30 X 182 30 30 X 30- - TO-18 TO-18 NPN - NPN 80 - 120 80 7 120 0.5 7 0.5 0.5 325 0.5 -65 to +200 325 120 -65 to +200 5 120 5 30 X 182 30 30 X 30- - TO-18 TO-18 NPN - NPN 80 - 120 80 7 120 0.5 7 0.5 0.5 325 0.5 -65 to +200 325 120 -65 to +200 5 120 5 30 X 182 30 30 X 30- - TO-18 TO-18 NPN - NPN 80 - 120

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/255AA * 6.7 List of PINs. 6.7.1 PINs for encapsulated devices. The following is a list of possible PINs for encapsulated devices available on this specification sheet. PINs for type 2N2221A and 2N2222A. JAN2N2221A JANTX2N2221A JANTXV#2N2221A JANS#2N2221A JAN2N2222A JANTX2N2222A JANTXV#2N2222A JANS#2N2222A JAN2N2221AL JANTX2N2221AL JANTXV#2N2221AL JANS#2N2221AL JAN2N2222AL JANTX2N2222AL JANTXV#2N2222AL JANS#2N2222AL JAN2N2221AUA JANTX2N2221AUA JANTXV#2N2221AUA JANS#2N2221AUA JAN2N2222AUA JANTX2N2222AUA JANTXV#2N2222AUA JANS#2N2222AUA JAN2N2221AUB JANTX2N2221AUB JANTXV#2N2221AUB JANS#2N2221AUB JAN2N2222AUB JANTX2N2222AUB JANTXV#2N2222AUB JANS#2N2222AUB JAN2N2221AUBC JANTX2N2221AUBC JANTXV#2N2221AUBC JANS#2N2221AUBC JAN2N2222AUBC JANTX2N2222AUBC JANTXV#2N2222AUBC JANS#2N2222AUBC JAN2N2221AUBN JANTX2N2221AUBN JANTXV#2N2221AUBN JANS#2N2221AUBN JAN2N2222AUBN JANTX2N2222AUBN JANTXV#2N2222AUBN JANS#2N2222AUBN JAN2N2221AUBCN JANTX2N2221AUBC

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NDMENT 1 6.7 List of PINs. 6.7.1 PINs for encapsulated devices. The following is a list of possible PINs for encapsulated devices available on this specification sheet. PINs for type 2N2221A and 2N2222A. JAN2N2221A JANTX2N2221A JANTXV#2N2221A JANS#2N2221A JAN2N2222A JANTX2N2222A JANTXV#2N2222A JANS#2N2222A JAN2N2221AL JANTX2N2221AL JANTXV#2N2221AL JANS#2N2221AL JAN2N2222AL JANTX2N2222AL JANTXV#2N2222AL JANS#2N2222AL JAN2N2221AUA JANTX2N2221AUA JANTXV#2N2221AUA JANS#2N2221AUA JAN2N2222AUA JANTX2N2222AUA JANTXV#2N2222AUA JANS#2N2222AUA JAN2N2221AUB JANTX2N2221AUB JANTXV#2N2221AUB JANS#2N2221AUB JAN2N2222AUB JANTX2N2222AUB JANTXV#2N2222AUB JANS#2N2222AUB JAN2N2221AUBC JANTX2N2221AUBC JANTXV#2N2221AUBC JANS#2N2221AUBC JAN2N2222AUBC JANTX2N2222AUBC JANTXV#2N2222AUBC JANS#2N2222AUBC JAN2N2221AUBN JANTX2N2221AUBN JANTXV#2N2221AUBN JANS#2N2221AUBN JAN2N2222AUBN JANTX2N2222AUBN JANTXV#2N2222AUBN JANS#2N2222AUBN JAN2N2221AUBCN JANTX2N2221AUBC

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(100247) Page 6 of 6 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Microsemi: JANS2N2222AUB 2N2222AL 2N2222A 2N2221A 2N2222AUA 2N2221AUB 2N2221AUA 2N2221AL 2N2222AUB JAN2N2221AL Jantx2N2222A JAN2N2222A JANS2N2221AUB Jantxv2N2222AUB JANS2N2221A Jantx2N2221AUA Jantxv2N2222AL Jantxv2N2221AUA JANS2N2222A Jan2N2221AUA Jantxv2N2221A JAN2N2222AL JANTX2N2221AL Jantx2N2221AUB JANTXV2N2221AL Jantx2N2222AUA JANS2N2222AUA Jan2N2221AUB Jan2N2221A Jantx2N2222AUB Jantx2N2222AL Jantxv2N2222A Jantxv2N2222AUA JANS2N2222AL JAN2N2222AUA JANS2N2221AL Jantx2N2221A JANS2N2221AUA

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IL-S-19500/182 JAN1N963B MIL-S-19500/117 JAN2N2219 MIL-S-19500/251 JAN1N964B MIL-S-19500/117 JAN-TXN2219 MIL-S-19500/251 JAN1N965B MIL-S-19500/117 JAN2N2219A MIL-S-19500/251 JAN1N966B MIL-S-19500/117 JAN-TX2N2219A MIL-S-19500/251 JAN1N967B MIL-S-19500/117 JAN2N2222 MIL-S-19500/255 JAN1N968B MIL-S-19500/117 JAN-T X2N2222 MIL-S-19500/255 JAN1N969B MIL-S-19500/117 JAN2N2222A MIL-S-19500/255 JAN1N970B MIL-S-19500/117 JAN-TX2N2222A MIL-S-19500/255 JAN1N971B MIL-S-19500/117 JAN2N2369A MIL-S-19500/317 JAN1N972B MIL-S-19500/117 JAN-TX2N2369A MIL-S-19500/317 JAN1N973B MIL-S-19500/117 JAN2N2481 MIL-S-19500/268 JAN1N3064 MIL-S-19500/144 JAN-TX2N2481 MIL-S-19500/268 JAN-TX1N3064 MIL-S-19500/144 JAN2N2484 MIL-S-19500/376 JAN1N3070 MIL-S-19500/169 JAN-TX2N2484 MIL-S-19500/376 JAN-TX1N3070 MIL-S-19500/169 JAN2N2905 MIL-S-19500/290 JAN1N3595 MIL-S-19500/241 JAN-TX2N2905 MIL-S-19500/290 JAN1N3600 MIL-S-19500/231 JAN2N2905A MIL-S-19500/290 JAN-T X1N3600 MIL-S-19500/231 JAN-TX2N2905A MIL-S-19500/290 JA

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0 500 10 JANTXV2N2222 10-18 60 30 6 10 50 | 35 0.4 10 04 o6 13 150] 8 250 20 | 250 1 20 75 10 10 1.6 6 500 100 300 18010 30 500 10 2N2222A T0.18 78 40 6 10 6o | 35 0.1 10 03 o6 12 150| 8 300 20 | 285 1 20 75 10 10 1 500 100 300 150 6110 50 18010 40 500 10 JAN2N22224 10-18 8 50 6 10 60 | 50 0.4 10 03 06 12 10] 8 250 20 | 300 1 20 5 1 10 1 500 100 10 10 100 300 150 10 30 500 10

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s ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device Package Shipping TO-18 Bulk JAN2N2222A JANTX2N2222A JANTXV2N2222A (c) Semiconductor Components Industries, LLC, 2012 August, 2012 - Rev. 1 1 Publication Order Number: 2N2222A/D 2N2222A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO 50 - Vdc - - 10 10 mAdc nAdc - - 10 10 mAdc nAdc - 50 nAdc 50 75 100 100 30 - 325 - 300 - - - 0.3 1.0 0.6 - 1.2 2.0 2.5 - 50 - - 25 - 8.0 OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 10 mAdc) Collector-Base Cutoff Current (VCB = 75 Vdc) (VCB = 60 Vdc) ICBO Emitter-Base Cutoff Current (VEB = 6.0 Vdc) (VEB = 4.0 Vdc) IEBO Collector-Emitter Cutoff Current (VCE = 50 Vdc) ICES ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE =

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ing those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping TO-18 Bulk JAN2N2222A JANTX2N2222A JANTXV2N2222A (c) Semiconductor Components Industries, LLC, 2013 November, 2013 - Rev. 2 1 Publication Order Number: 2N2222A/D 2N2222A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO 50 - Vdc - - 10 10 mAdc nAdc - - 10 10 mAdc nAdc - 50 nAdc 50 75 100 100 30 - 325 - 300 - - - 0.3 1.0 0.6 - 1.2 2.0 2.5 - 50 - - 25 - 8.0 OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 10 mAdc) Collector-Base Cutoff Current (VCB = 75 Vdc) (VCB = 60 Vdc) ICBO Emitter-Base Cutoff Current (VEB = 6.0 Vdc) (VEB = 4.0 Vdc) IEBO Collector-Emitter Cutoff Current (VCE = 50 Vdc) ICES ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE

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37) -036 (0.31) | 115 (2.92) rc Z .024 (0.61) a -046 (1.17) COLLECTOR EMITTER . 3 2 BASE. DIMENSIONS ARE IN INCHES (MILLIMETERS) 1 Feature Ceramic surface mount package Miniature package to minimize circuit board area e Electrical performance similar to a JAN2N2222A Hermetically sealed package e Screened per MIL-S-19500 TX or TXV equivalent levels on request e Same footprint and pin-out as many SOT-23 package transistors Description The HCT2222M is a miniature hermetically sealed ceramic surface-mount general purpose switching transistor, consisting of a 2N2222A silicon NPN transistor die. The HCT2222M electrical characteristics are similar to the MIL-S-19500/255 specification for the JANTX2N2222A. The miniature three pin ceramic package is ideal for upgrading commercial grade circuits to military reliability levels where plastic SOT-23 devices have been used. High reliability processing available per MIL-S-19500 TX or TXV equivalent levels on request. Absolute Maximum Ratings (Ta = 25C unless ot

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l operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO-18 CASE 206AA STYLE 1 ORDERING INFORMATION Device Package Shipping TO-18 Bulk JAN2N2222A JANTX2N2222A JANTXV2N2222A (c) Semiconductor Components Industries, LLC, 2012 January, 2012 - Rev. 0 1 Publication Order Number: 2N2222A/D 2N2222A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO 50 - Vdc - - 10 10 mAdc nAdc - - 10 10 mAdc nAdc - 50 nAdc 50 75 100 100 30 - 325 - 300 - - - 0.3 1.0 0.6 - 1.2 2.0 2.5 - 50 - - 25 - 8.0 OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 10 mAdc) Collector-Base Cutoff Current (VCB = 75 Vdc) (VCB = 60 Vdc) ICBO Emitter-Base Cutoff Current (VEB = 6.0 Vdc) (VEB = 4.0 Vdc) IEBO Collector-Emitter Cutoff Current (VCE = 50 Vdc) ICES ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE =

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a hermetically sealed, ceramic surface-mount, complementary transistor pair. The HCT700 consists of an NPN transistor die and PNP transisitor die. The HCT700 electrical characteristics for the NPN side are similar to the MIL-S-19500/255 specification for JAN2N2222A and on the PNP side are similar to the MIL-S-10500/291 specification for the JAN2N2907A. The miniature six pin ceramic package is ideal for designs where board space and device weight are important design considerations. Order HCT700TX or HCT700TXV for TX or TXV processing per MII-S-19500. Absolute Maximum Ratings (Ta = 25C unless otherwise noted) NPN to PNP Isolation Voltage .... 6... cee cnet 500VDC Collector-Base Voltage (NPN) ......... 0.0.2. cece cece e eee eee ee eee 75V Collector-Base Voltage (PNP) ......... 2.0.0 cece cece eee eee eee 60V Collector-Emitter Voltage (NPN) ........0.0. 00. cece eee eee 50V Collector-Emitter Voltage (PNP). ........0. 000 sce e cece eee eee eee eee 60V Emitter-Base Voltage (NPN) .......... 0.00 ccc

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rature that the 2 chip carrier is mounted on. switching transistor, consisting of a (2) Derate linearly 5.7mW/C above 25C. 2N2222A silicon NPN transistor die. The HCT2222A electrical characteristics are similar to the MIL-S-19500/255 specification for the JAN2N2222A. The miniature four pin ceramic package is ideal for designs where board space and device weight are important design considerations. High reliability processing per MIL-S-19500 TX or TXV equivalent levels on request. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (214) 323-2200 Fax (214) 323-2396 16-8 Type HCT2222A Electrical Characteristics (Ta = 25C unless otherwise noted) SYMBOL | PARAMETER | MIN | TYP | MAX|UNITS| TEST CONDITIONS Off Characteristics . . . . ViBRycBo Collector-Base Breakdown Voltage 75 | VV jIl = 10.0 vA, le =0 Veryceo | Collector-Emitter Breakdown Voltage 50 VV fic = 10.0 mA, Ip=0 - VieR)eBo | Emitter-Base Breakdown Voltage 6.0 Vs fle = 10.0 pA, Ic =0 icso | Collector-Base Cuttoff Current 10.0

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4.0m 2 : 200n% |5.00 |2.0md |220 PE109B 500m |200M8A|2.5m : 200n% |5.0 |2.0 g |200 SG105t 500m |200MsA| : 20n 104] 1 75 ZTX360t 500m |200MSA|3.3m 0 1, 500nd |1. 25 BT5109T 500med |216M# |2.8mo s > : 20M 40 SEBO40 |, [800m |230Ms 5.0m 0/1. 50nd 1.08 |1 70 JAN2N2222t {500m |250M8A/2.9m : 10nB | 10D] 1.0me 2N2540t 500m |250MSA|2.9m : '25ud_ | 104]1.0me m . 2N27921 500m |250MSA/2.8m 5 . 1 20 2N3411* 500m |250M8A|2.9m : O1ud 1.0mZ 2N496it 500m |250MSA14.5m 5 |1.0 1 100|1. 60 JAN2N5581t [500m |250MSA/2.2m 0 }800m | 10nd | 104]1.0 30 40577 500m |250M8A|357u 0 [500m |.0tud [5.00 |1 50 BC550C 500m |250MS |4.0m .0 {100m | 15nd |5.0 |2.0m |600 BFX94 500m |250MA8|/3.3m .0 [800m |.01ug | 10/1 40 BFX9 500m |250mMsa\ ~~ }800m 100] 1 100 BT2221 500mZ |250MSA|2.8mm . 106] 1 35 BT2222T 500m |250MSA|2.8md 5 : 108] 4 75 HSE307-AT 500m |250M8A/5.0m : . : 70 MPS2222Kt |500m |250M8A/3.3m 50 MPS2713Kt |500m |250M8 |3.3m : . : 30 MPS2714Kt |500m |250M8 |3.3m : -| 80 TP2221 500m |250mM | : , ' 40 UPI2222P 500m {250MSA/3.

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cription The HCT2222A is a hermetically sealed ceramic surface-mount general purpose switching transistor, consisting of a 2N2222A silicon NPN transistor die. The HCT2222A electrical characteristics are similar to the MIL-S-19500/255 specification for the JAN2N2222A. The miniature four pin ceramic package is ideal for designs where board space and device weight are important design considerations. High reliability processing per MIL-S-19500 TX or TXV equivalent levels on request. Absoiute Maximum Ratings (Ta = 25C unless otherwise noted) Collector-Base Voltage. ... 06... ec e ec ee een t ete tent eee nenaee 75V Collector-Emitter Voltage 0.0... ee cee een ete ene nee 50V Emitter-Base Voltage... 0... kee cece etter enna tees 6.0V Collector Current-Continuous.. 2.0... 0... ee ees 800mA Operating Junction Temperature (Ty)...... 0.0 cece cece ee eee ~65C to +200C Storage Junction Temperature Ce -65C to +200C Power Dissipation @ Ta = 25C... ccc cece cece eevee tenes 0.4W Power Dissipation @ Ts") = 25C

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