IRF723R File Number 1991 Avalanche Energy Rated N-Channel Power MOSFETs 2.5A and 3.0A, 350V-400V tps(on) = 1.8N and 2.50 TERMINAL DIAGRAM Features: @ Single pulse avalanche energy rated D SOA is power-dissipation limited i Nanosecond switching speeds @ Linear transfer characteristics High input impedance S 9208-42658 -CHA The IRF720R, IRF721R, |RF722R and IRF723R are ad- N-CHANNEL ENHANCEMENT MODE vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel en- hancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, ; switching converters, motor drivers, relay drivers, and driv- SOURCE ers for high-power bipolar switching transistors requiring DRAIN high speed and low gate-drive power. These types can be (FLANGE) * O iS DRAIN operated directly from integrated circuits. ee The IRF-types are supplied in the JEDEC TO-220AB plast

econd Switching Speeds Linear Transfer Characteristics * High Input Impedance Description The IRF720, IRF721, IRF722, and IRF723 are n-channel | Terminal Diagram enhancement-mode silicon-gate power field-effect transis- tors. IRF720R, IRF721R, IRF722R and IRF723R types are N-CHANNEL ENHANCEMENT MODE advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown D avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high G speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF types are supplied in the JEDEC TO-220AB plastic Ss package. Absolute Maximum Ratings (To = +259C), Unless Otherwise Specified IRF720 IRF721 IRF722 IRF723 IRF720R IRF721R IRF722R IRF723R UNITS Drain-Source Voltage (1) ....... 0... ccc c