IRF7233PBF HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS(on) = 0.020 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drai

IRF7233PBF HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS(on) = 0.020 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drai

t D2PAK SO8 IRF7210PBF Discrete Hexfet SO8 IRF7210TR Discrete Hexfet SO8 IRF7210 Discrete Hexfet SO8 IRF7220TRPBF Discrete Hexfet SO8 IRF7220PBF Discrete Hexfet SO8 IRF7220TR Discrete Hexfet SO8 IRF7220 Discrete Hexfet SO8 IRF7233TRPBF Discrete Hexfet SO8 IRF7233PBF Discrete Hexfet SO8 IRF7233TR Discrete Hexfet SO8 IRF7233 Discrete Hexfet SO8 IRF7240PBF IRF7240TRPBF Discrete Hexfet Discrete Hexfet SO8 SO8 IRF7240 Discrete Hexfet SO8 IRF7240TR Discrete Hexfet SO8 http://www.szshouhe.com TEL: 0755-8380 8450 400V Single N-Channel HEXFET Power MOSFET in a 800 D2-Pak package 400V Single N-Channel HEXFET Power MOSFET in a 50 D2-Pak package 800 400V 3.300A D2PAK 400V Single N-Channel HEXFET Power MOSFET in a 800 D2-Pak package 400V Single N-Channel HEXFET Power MOSFET in a 800 D2-Pak package 400V Single N-Channel HEXFET Power MOSFET in a 50 D2-Pak package 4,000 14V 16.000A SO-8 -12V Single P-Channel HEXFET Power MOSFET in a 95 SO-8 package -12V Single P-Channel HEXFET Power MOSFET in a 4,000 SO-8 packag