IRF7233PbF HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS(on) = 0.020 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drai

IRF7233 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D 1 8 S 2 7 D S 3 6 D 4 5 D S G VDSS = -12V RDS(on) = 0.020W T o p V ie w Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. S O -8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Cu

IRF7233PbF HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS(on) = 0.020 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drai

40 80 1000 1000 0 0 0 4.3E+06 4.3E+06 8.6E+06 212 212 0 Micro-3, N-channel IRLML2402 IRLML2502 IRLML2502 Total 110 227 231 150 150 150 20 20 20 40 40 40 120 1000 1000 1000 0 0 0 0 4.3E+06 4.3E+06 4.3E+06 1.3E+07 212 212 212 71 SO-8, P-channel, Low Voltage IRF7233 IRF7233 IRF7404 IRF7404 IRF7314 IRF7205 Total 206 206 113 119 145 144 150 150 150 150 150 150 9.6 9.6 20 20 20 30 20 20 40 40 20 40 180 1000 1000 1000 1000 1000 1000 0 0 0 0 0 0 0 2.1E+06 2.1E+06 4.3E+06 4.3E+06 2.2E+06 4.3E+06 1.9E+07 430 430 212 212 424 211 47 SO-8, P-channel, Mid Voltage IRF6216 IRF6217 Total 144 144 150 150 120 120 80 80 160 1000 1000 0 0 0 8.5E+06 8.5E+06 1.7E+07 107 107 54 SO-8, N-channel, Low Voltage IRF7476 IRF7101 IRF7101 IRF7311 IRF7311 IRF7403 IRF7413 IRF7413A IRF7413A IRF7455 IRF7811A IRF7811W IRF7822 IRF7822 IRF7822 IRL7821 IRF7484 IRF7484 IRF7341Q IRF7491 IRF7380 Total 112 150 205 150 205 103 108 150 206 108 109 205 227 228 232 231 143 146 145 220 211 150 150 150 150 150 150 150 150 150 150 150

IRF7233 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS(on) = 0.020 T op V ie w Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, V

IRF7233 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS(on) = 0.020 T op V ie w Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, V

IRF7233 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS(on) = 0.020 T op V ie w Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. S O -8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Curr

BF Discrete Hexfet Discrete Hexfet D2PAK SO8 IRF7210PBF Discrete Hexfet SO8 IRF7210TR Discrete Hexfet SO8 IRF7210 Discrete Hexfet SO8 IRF7220TRPBF Discrete Hexfet SO8 IRF7220PBF Discrete Hexfet SO8 IRF7220TR Discrete Hexfet SO8 IRF7220 Discrete Hexfet SO8 IRF7233TRPBF Discrete Hexfet SO8 IRF7233PBF Discrete Hexfet SO8 IRF7233TR Discrete Hexfet SO8 IRF7233 Discrete Hexfet SO8 IRF7240PBF IRF7240TRPBF Discrete Hexfet Discrete Hexfet SO8 SO8 IRF7240 Discrete Hexfet SO8 IRF7240TR Discrete Hexfet SO8 http://www.szshouhe.com TEL: 0755-8380 8450 400V Single N-Channel HEXFET Power MOSFET in a 800 D2-Pak package 400V Single N-Channel HEXFET Power MOSFET in a 50 D2-Pak package 800 400V 3.300A D2PAK 400V Single N-Channel HEXFET Power MOSFET in a 800 D2-Pak package 400V Single N-Channel HEXFET Power MOSFET in a 800 D2-Pak package 400V Single N-Channel HEXFET Power MOSFET in a 50 D2-Pak package 4,000 14V 16.000A SO-8 -12V Single P-Channel HEXFET Power MOSFET in a 95 SO-8

ate is to use 40 mA as the ADN8830 V TEC LOAD Figure 15. Measuring Efficiency of the ADN8830 Circuit Table V. Recommended FETs for Linear Output Amplifier Part Number Type CGD (nF) FDW2520C* NMOS PMOS NMOS PMOS NMOS PMOS 0.17 0.15 0.5 2.2 0.23 0.6 IRF7401 IRF7233 FDR6674A FDR840P Ext. CGD (nF) CSNUB (nF) 2.2 3.3 1.0 3.3 1.0 3.3 rDS, ON (m) IMAX (A) Manufacturer 18 35 22 20 9.5 12 6.0 4.5 8.7 9.5 11.5 10 Fairchild Fairchild International Rectifier International Rectifier Fairchild Fairchild *Recommend transistors in typical application circuit Figure 1. Table VI. Recommended FETs for PWM Output Amplifier Part Number Type CISS (nF) rDS,ON (m) Continuous IMAX (A) Manufacturer FDW2520C* NMOS PMOS NMOS PMOS NMOS PMOS 1.33 1.33 1.0 3.5 1.6 1.5 18 35 30 17 22 40 6.0 4.5 5.3 7.3 8.7 6.7 Fairchild Fairchild Vishay Siliconix Vishay Siliconix International Rectifier International Rectifier Si7904DN Si7401DN IRF7401 IRF7404 *Recommend transistors in typical application circuit Figure 1. REV. B -17- ADN8830 T

the current while finding the gate TEC LOAD V Figure 16. Measuring Efficiency of the ADN8830 Circuit Table V. Recommended FETs for Linear Output Amplifier Part Number Type CGD (nF) FDW2520C* NMOS PMOS NMOS PMOS NMOS PMOS 0.17 0.15 0.5 2.2 0.23 0.6 IRF7401 IRF7233 FDR6674A FDR840P Ext. CGD (nF) CSNUB (nF) 2.2 3.3 1.0 3.3 1.0 3.3 rDS,ON (m) IMAX (A) Manufacturer 18 35 22 20 9.5 12 6.0 4.5 8.7 9.5 11.5 10 Fairchild International Rectifier International Rectifier Fairchild Fairchild *Recommend transistors in typical application circuit Figure 1. Table VI. Recommended FETs for PWM Output Amplifier Part Number Type CISS (nF) rDS,ON (m) Continuous IMAX (A) Manufacturer FDW2520C* NMOS PMOS NMOS PMOS NMOS PMOS 1.33 1.33 1.0 3.5 1.6 1.5 18 35 30 17 22 40 6.0 4.5 5.3 7.3 8.7 6.7 Fairchild Si7904DN Si7401DN IRF7401 IRF7404 *Recommend transistors in typical application circuit Figure 1. REV. 0 -17- Vishay Siliconix Vishay Siliconix International Rectifier International Rectifier ADN8830 The voltmeter to the T

ate is to use 40 mA as the ADN8830 V TEC LOAD Figure 15. Measuring Efficiency of the ADN8830 Circuit Table V. Recommended FETs for Linear Output Amplifier Part Number Type CGD (nF) FDW2520C* NMOS PMOS NMOS PMOS NMOS PMOS 0.17 0.15 0.5 2.2 0.23 0.6 IRF7401 IRF7233 FDR6674A FDR840P Ext. CGD (nF) CSNUB (nF) 2.2 3.3 1.0 3.3 1.0 3.3 rDS, ON (m) IMAX (A) Manufacturer 18 35 22 20 9.5 12 6.0 4.5 8.7 9.5 11.5 10 Fairchild International Rectifier International Rectifier Fairchild Fairchild *Recommend transistors in typical application circuit Figure 1. Table VI. Recommended FETs for PWM Output Amplifier Part Number Type CISS (nF) rDS,ON (m) Continuous IMAX (A) Manufacturer FDW2520C* NMOS PMOS NMOS PMOS NMOS PMOS 1.33 1.33 1.0 3.5 1.6 1.5 18 35 30 17 22 40 6.0 4.5 5.3 7.3 8.7 6.7 Fairchild Si7904DN Si7401DN IRF7401 IRF7404 *Recommend transistors in typical application circuit Figure 1. REV. A -17- Vishay Siliconix Vishay Siliconix International Rectifier International Rectifier ADN8830 The voltmeter to the

.56 2.57 (148880) P-CHANNEL HEXFET POWER MOSFETs * = Tape Cut V(BR) ID (A) Mfg. Part RDS(ON) DSS (V) @ 25C () No. -12 -4.3 50 IRLML6401TRPBF* 50 IRLML6401GTRPBF* -12 -4.3 -12 -8 14 IRF7702GTRPBF* -12 -8.9 24 IRF7433PBF -12 9.2 21 IRF7329TRPBF* -12 -9.5 13 IRF7233TRPBF* -12 -10 11 IRF7701GTRPBF* -12 -11 12 IRF7220PBF -12 -11 12 IRF7220PBF -12 -11.5 14 IRF7420PBF -12 -11.5 26 IRF7420TRPBF* -12 -16 7 IRF7210PBF -12 -16 7 IRF7410PBF -12 -16 7 IRF7410GTRPBF -12 -16 7 IRF7410GPBF -14 -11 8.2 IRF7220GTRPBF* -14 -11 20 IRF7220TRPBF* -20 -0.78 600 IRLML6302TRPBF* 600 IRLML6302GTRPBF* -20 -0.78 -20 -1.7 170 IRF7524D1TRPBF* -20 -2.3 200 IRLMS6702TRPBF* -20 -2.3 400 IRF7104TRPBF* 0.09 IRLML2246TRPBF* -20 -2.6 -20 -3.6 90 IRF7604TRPBF* 1.800.463.9275 * www.newark.com STIBOINFO((NEWARK_MAIN_C124_293)) 1 N-CHANNEL HEXFET(R) POWER MOSFETs: 100 TO 200V (CONT.) C-293 M-293 Y-293 B-293 USEXP1-293 Price Power VGS Each Dissi@ Rds(on) pation (W) Pkg. (V) Stock No. 10-99 -4.5 1.3 3-SOT-23 63J7615 0.32 0.50 39T2126 0.52

NG Products to be released within next 3-4 months Potential products no current plans... see bus.mgmt. Dual SO-8 SOT-223 DPak Effective 14 June, 1999 BVdss -12V/ -14V 20V -20 V Rds(on) gate, Change spd Micro3 Micro6 single/dual Micro8 Single SO-8 0.020 LL IRF7233 91849 0.014 LL IRF7220 91850 0.007 LL .250-.300 LL 0.135 LL IRLML2402 91257 IRF7501/7 91265/69 IRLMS1902 91540 IRF7101 90871 0.100 LL, L 0.050 LL 0.035 LL 0.029 LL 0.022 LL 0.020 LL IRL3302S 91692 0.016 LL IRL3202S 91675 0.013 LL IRL3102S 91691 0.008 LL IRL3402S 91693 0.006 LL IRL3502S 91676 0.600 LL 0.270 LL 0.2 - 0.25 LL, L 0.090 LL 0.06 - 0.09 LL IRF7301/IRF7307 91238/91242 IRF7601 91261 IRF7311/IRF7317 91435 / 91568 IRF7401 91244 IRLML6302 91259 IRF7504/7 91267/69 IRLMS6702 91414 IRF7104 91096 IRF7304/IRF7307 91240/91242 IRF7604 91263 IRF7207 91879 3/99 7/99 IRF7204 91103 0.060 IRF7314/IRF7317 91436 / 91568 LL 0.05 - 0.055 LL Y 0.040 LL Y 0.025 LL Y 25 V 0.100 LL IRF7105 91097 -25 V 0.250 LL IRF7105 91097 0.250 L 0.1-0.135 L 0.050 L

ate is to use 40 mA as the ADN8830 V TEC LOAD Figure 15. Measuring Efficiency of the ADN8830 Circuit Table V. Recommended FETs for Linear Output Amplifier Part Number Type CGD (nF) FDW2520C* NMOS PMOS NMOS PMOS NMOS PMOS 0.17 0.15 0.5 2.2 0.23 0.6 IRF7401 IRF7233 FDR6674A FDR840P Ext. CGD (nF) CSNUB (nF) 2.2 3.3 1.0 3.3 1.0 3.3 rDS, ON (m) IMAX (A) Manufacturer 18 35 22 20 9.5 12 6.0 4.5 8.7 9.5 11.5 10 Fairchild Fairchild International Rectifier International Rectifier Fairchild Fairchild *Recommend transistors in typical application circuit Figure 1. Table VI. Recommended FETs for PWM Output Amplifier Part Number Type CISS (nF) rDS,ON (m) Continuous IMAX (A) Manufacturer FDW2520C* NMOS PMOS NMOS PMOS NMOS PMOS 1.33 1.33 1.0 3.5 1.6 1.5 18 35 30 17 22 40 6.0 4.5 5.3 7.3 8.7 6.7 Fairchild Fairchild Vishay Siliconix Vishay Siliconix International Rectifier International Rectifier Si7904DN Si7401DN IRF7401 IRF7404 *Recommend transistors in typical application circuit Figure 1. REV. D -17- ADN8830 T

ate is to use 40 mA as the ADN8830 V TEC LOAD Figure 15. Measuring Efficiency of the ADN8830 Circuit Table V. Recommended FETs for Linear Output Amplifier Part Number Type CGD (nF) FDW2520C* NMOS PMOS NMOS PMOS NMOS PMOS 0.17 0.15 0.5 2.2 0.23 0.6 IRF7401 IRF7233 FDR6674A FDR840P Ext. CGD (nF) CSNUB (nF) 2.2 3.3 1.0 3.3 1.0 3.3 rDS, ON (m) IMAX (A) Manufacturer 18 35 22 20 9.5 12 6.0 4.5 8.7 9.5 11.5 10 Fairchild Fairchild International Rectifier International Rectifier Fairchild Fairchild *Recommend transistors in typical application circuit Figure 1. Table VI. Recommended FETs for PWM Output Amplifier Part Number Type CISS (nF) rDS,ON (m) Continuous IMAX (A) Manufacturer FDW2520C* NMOS PMOS NMOS PMOS NMOS PMOS 1.33 1.33 1.0 3.5 1.6 1.5 18 35 30 17 22 40 6.0 4.5 5.3 7.3 8.7 6.7 Fairchild Fairchild Vishay Siliconix Vishay Siliconix International Rectifier International Rectifier Si7904DN Si7401DN IRF7401 IRF7404 *Recommend transistors in typical application circuit Figure 1. REV. D -17- ADN8830 T