IRF723 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs Features Related Literature 2.8A and 3.3A, 350V and 400V * DS(ON) = 1.80 and 2.50 SOA is Power Dissipation Limited * Nanosecond Switching Speeds + Linear Transfer Characteristics + High Input Impedance Single Pulse Avalanche Energy Rated - TB334 Guidelines for Soldering Surface Mount Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17404. Components to PC Boards Symbol Ordering information 3 PAR

IRF723 S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description * 2.8A and 3.3A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. * rDS(ON) = 1.8 and 2.5 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Formerly developmental t

IRF7233 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D 1 8 S 2 7 D S 3 6 D 4 5 D S G VDSS = -12V RDS(on) = 0.020W T o p V ie w Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. S O -8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Cu

IRF7238 400 Volt, 1.8 Ohm HEXFET Product Summary TO-220AB Plastic Package The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. IRF720 400V 1.82 3.3A The efficient geometry and unique processing of this latest p State of the Art design achieves: very low on-state IRF 721 350V 1.60 3.3A resistance combined with high transconductance; superior IRF722 400v | 2.52 2.8A reverse energy and diode recovery dv/dt capability. (RF723 * 350V 2.50 - 2.8A a ror} a ea Part Number | BVpss | Rpgion) _| |p The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage FEATURES: control, very fast switching, ease of paralleling and sae : temperature stability of the electrical parameters. a Repetitive Avalanche Ratings M@ Dynamic dv/dt Rating They are well suited for applications such as switching : ; trary power supplies, motor controls, inverters, choppers, audio mM Simple Drive Requirements . amplifiers and high energy puls

and 2.50 Si * DRAIN ingle Pulse Avalanche Energy Rated => SOURCE (FLANGE) O DRAIN * SOA is Power-Dissipation Limited | <=> GATE Nanosecond Switching Speeds Linear Transfer Characteristics * High Input Impedance Description The IRF720, IRF721, IRF722, and IRF723 are n-channel | Terminal Diagram enhancement-mode silicon-gate power field-effect transis- tors. IRF720R, IRF721R, IRF722R and IRF723R types are N-CHANNEL ENHANCEMENT MODE advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown D avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high G speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF types are supplied in the JEDEC TO-220AB plastic Ss package. Absolute Maximum Ratings (To = +259C), Un

istics High input impedance Majority carrier device The IRF720, {RF721, IRF722 and ItRF723 are n-channel enhancement-mode silicon-gate power field- effect transistors designed for applications such as switch- Standard Power MOSFETs IRF720, IRF721, IRF722, IRF723 N-CHANNEL ENHANCEMENT MODE 6O s 92CS-33741 TERMINAL DIAGRAM TERMINAL DESIGNATION SOURCE ing regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching tran- ee) = DRAIN sistors requiring high speed and low gate-drive power. C These types can be operated directly from integrated [_ circuits. TOP VIEW GATE The !RF-types are supplied in the JEDEC TO-220AB plastic 92cs-39528 package. JEDEC TO-220AB Absolute Maximum Ratings Parameter IAF720 IRF721 IRF722 IRF723 Units. Vos Drain - Source Voltage (D 400 350 400 350 v VoGr Drain - Gate Voltage (Rgg = 20 KO) @ 400 350 400 350 Vv Ip @Te = 25C Continuous Drain Current 3.0 3.0 2.5 2.5 A Ip @ Te = 100C Continuous Drain Current 2.0 2.9 15 1

IRF7233 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS(on) = 0.020 T op V ie w Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, V

IRF723R File Number 1991 Avalanche Energy Rated N-Channel Power MOSFETs 2.5A and 3.0A, 350V-400V tps(on) = 1.8N and 2.50 TERMINAL DIAGRAM Features: @ Single pulse avalanche energy rated D SOA is power-dissipation limited i Nanosecond switching speeds @ Linear transfer characteristics High input impedance S 9208-42658 -CHA The IRF720R, IRF721R, |RF722R and IRF723R are ad- N-CHANNEL ENHANCEMENT MODE vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel en- hancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, ; switching converters, motor drivers, relay drivers, and driv- SOURCE ers for high-power bipolar switching transistors requiring DRAIN high speed and low gate-drive power. These types can be (FLANGE) * O iS DRAIN operated directly from integrated circuits. ee The IRF-types are supplied in the JEDEC TO-220AB plast

IRF723 307 | BUZ11Fi BUZ11Fi 167 2SK308 IRF142 261 BUZ11P BUZ11Fi 167 2SK310 IRF722 307 | BUZ11S2 BUZ11S2 177 2SK311 IRF833 331 BUZ11S2FI | BUZ11S2Ft 177 2SK312 SGSP575 577 | BUZI4 SGSP591 595 28K313 IRF453 279 | BUZI5 SGSP591 595 28K319 IRF730 313 | BUZ20 BUZ20 183 28K320 IRF843 337 J BUZ21 BUZ21 187 2SK324 SGSP575 577 | BUZ24 BUZ24 * 25K345 SGSP358 505 | BUZ25 BUZ25 191 28K346 IRF523 285 | BUZ32 BUZ32 195 2SK349 IRFP453 355 | BUZ34 BUZ34 * 2SK350 IRFP453 355 | BUZ41A BUZ41A 199 2SK357 SGSP317 469 | BUZ42 BUZ42 203 2SK382 IRF822 325 BUZ45 BUZ45 207 2SK383 IRF530 291 BUZ45A BUZ45A 211 28K399 SGSP461 535 | BUZ60 BUZ60 215 2SK403 SGSP474 547 | BUZ60B BUZ60B 219 28K428 SGSP321 481 BUZ64 SGSP575 577 28K440 SGSP367 517 | BUZ71 BUz71 223 28K512 IRF452 279 | BUZ71A BUZ71A 229 2SK527 MTPSO5SAFI | 403 | BUZ71FI BUZ71F 223 2SK528 IRF722FI 307 | BUZ71P BUZ71Fi 223 2SK532 IRFS40F1 295 | BUZ72A BUZ72A 233 28K549 MTP3055A | 403 | BUZ73A SGSP367 S17 2SK552 IRF843 337 | BUZ74 BUZ74 237 2SK553 IRF842 337 | BUZ74A

IRF723 307 | BuziiFl =| BUZTIFI 167 2SK308 IRF142 261 | BuztiP | BUZztIFI 167 2SK310 IRF722 307 | Buzi1s2 | BUz11S2 177 28K311 IRF833 331 | BUZ11S2FI | BUZ11S2FI 177 28K312 SGSP575 | 577 | BUZ14 SGsP591 | 595 28K313 IRF453 279 | BUZ15 se@spse1 | 595 28K319 IRF730 313 | BUZ20 BUZ20 183 23K320 IRF843 337 | Buz? BUZ21 187 2SK324 sqsps75 | 577 | Buz24 BUZ24 * 2SK345 sqspa5s | 505 | BUZ25 BUZ25 191 28K346 IRF523 285 | BUZ32 BUZ32 195 2SK349 IRFP453 355 | BUZ34 BUZ34 * 28K350 IRFP453 355 | BUZ41A | BUZ41A 199 28K357 sasp317_ | 469 | Buz42 BUZ42 203 2SK382 IRF822 325 | BUz45 BUZ45 207 2SK383 IRF530 291 | BUZ45A | BUZ45A 211 28K399 s@sp461 | 535 | BUZ6O BUZ60 215 2S8K403 sqsp474 | 547 | BUZ60B | BUZ60B 219 28K428 sGsps21 | 481 | Buz64 SGSP575_ | 577 28K440 sGsp3e7 | 517 | Buzz! BUZ71 293 2SK512 IRF452 279 | BUZ7IA | BUZTIA 229 2SK527 MTP3055AF1 | 403 | BUZ7IFI | BUZ7IFI 223 2SK528 IRF722F1 | 307 | BUz71P | BUZ7IFI 293 2SK532 IRFS40F| | 295 | BUzZ72A | BUZ72A 233 28K549 MTP3055A | 403 | BUZ73A SGSP367_ |

erating area Improved high temperature reliability Rugged polysilicon gate cell structure N-CHANNEL POWER MOSFETS TO-220 IRF720/721/722/723 PRODUCT SUMMARY Part Number Vos | Rosen) to IRF720 400V 1.89 3.34 IRF721 350V 4.80 3.3A | IRF722 400V | 2.50 | 2.8A IRF723 350V 2.50 2.8A MAXIMUM RATINGS | Characteristics Symbol IRF720 IRF721 IRF722 IRF723 Unit Drain-Source Voltage (1) Voss 400 350 400 350 | Vde Drain-Gate Voltage (Rgs=1.0MQ)(1) Voar 400 350 400 350 Vdc Gate-Source Voltage Vas +20 Vde Continuous Drain Current Tc=25C Ip 3.3 | 3.3 2.8 2.8 Adc Continuous Drain Current Tc=100C Ib 2.1 | 2.1 1.8 1.8 Adc Drain CurrentPulsed (3) _ Ibm 13. | 13 1 11 Adc Gate Current~Puised lam 15 Adc Single Pulsed Avalanche Energy (4) Eas 190 mJ Avalanche Current las 3.3 A Totai Power Dissipation @ Tc=25C Pp 50 Watts Derate above 25C 0.40 wiec Operating and Storage _ Junction to Case Ty, Tstg 55 to 150 c Maximum Lead Temp. for Soldering Purposes, 1/8 from case for seconds Th 300 C Notes: (1) Ty=25C to 15

IRF7233PbF HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS(on) = 0.020 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drai

IRF7233PbF HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -12V RDS(on) = 0.020 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drai

3 2-132 2-132 2-132 2-132 IRF710 IRF711 IRF712 IRF713 2-157 2-157 2-157 2-157 FRC1620 FRM3205CC FRM3210CC FRM3215CC 3-3 2-63 2-63 2-63 IRF150 IRF151 IRF152 IRF153 2-83 2-83 2-83 2-83 IRF440 IRF441 IRF442 IRF443 2-138 2-138 2-138 2-138 IRF720 IRF721 IRF722 IRF723 2-107 2-107 2-107 2-107 FRM3220CC FRP805 FRP810 FRP815 2-63 2-47 2-47 2-47 IRF220 IRF221 IRF222 IRF223 2-87 2-87 2-87 2-87 IRF450 IRF451 IRF452 IRF453 2-143 2-143 2-143 2-143 IRF730 IRF731 IRF732 IRF733 2-112 2-112 2-112 2-112 FRP820 FRP840 FRP850 FRP860 2-47 4-6 4-6 4-6 IRF230 IRF231 IRF232 IRF233 2-92 2-92 2-92 2-92 IRF510 IRF511 IRF512 IRF513 2-147 2-147 2-147 2-147 IRF740 IRF741 IRF742 IRF743 2-118 2-118 2-118 2-118 FRP1005 FRP1010 FRP1015 FRP1020 2-51 2-51 2-51 2-51 IRF240 IRF241 IRF242 IRF243 2-98 2-98 2-98 2-98 IRF520 IRF521 IFR522 IRF523 2-67 2-67 2-67 2-67 IRF820 IRF821 IFR822 IRF823 2-127 2-127 2-127 2-127 FRP1605 FRP1605CC FRP1610 FRP1610CC 2-55 2-59 2-55 2-59 IRF250 IRF251 IRF252 IRF253 2-103 2-103 2-103 2-103 IRF530 IRF531 IR

40 80 1000 1000 0 0 0 4.3E+06 4.3E+06 8.6E+06 212 212 0 Micro-3, N-channel IRLML2402 IRLML2502 IRLML2502 Total 110 227 231 150 150 150 20 20 20 40 40 40 120 1000 1000 1000 0 0 0 0 4.3E+06 4.3E+06 4.3E+06 1.3E+07 212 212 212 71 SO-8, P-channel, Low Voltage IRF7233 IRF7233 IRF7404 IRF7404 IRF7314 IRF7205 Total 206 206 113 119 145 144 150 150 150 150 150 150 9.6 9.6 20 20 20 30 20 20 40 40 20 40 180 1000 1000 1000 1000 1000 1000 0 0 0 0 0 0 0 2.1E+06 2.1E+06 4.3E+06 4.3E+06 2.2E+06 4.3E+06 1.9E+07 430 430 212 212 424 211 47 SO-8, P-channel, Mid Voltage IRF6216 IRF6217 Total 144 144 150 150 120 120 80 80 160 1000 1000 0 0 0 8.5E+06 8.5E+06 1.7E+07 107 107 54 SO-8, N-channel, Low Voltage IRF7476 IRF7101 IRF7101 IRF7311 IRF7311 IRF7403 IRF7413 IRF7413A IRF7413A IRF7455 IRF7811A IRF7811W IRF7822 IRF7822 IRF7822 IRL7821 IRF7484 IRF7484 IRF7341Q IRF7491 IRF7380 Total 112 150 205 150 205 103 108 150 206 108 109 205 227 228 232 231 143 146 145 220 211 150 150 150 150 150 150 150 150 150 150 150