HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE3055T is designed for general purpose of amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25C) * Maximum Temperature Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature ..................................................................................................................... 150 C Maximum * Maximum Power Dissipation Total Power Dissipation (TC=25C) .................................................................................................................... 75 W Total Power Dissipation (TA=25C) ................................................................................................................... 0.6 W * Maximum Voltages and Currents (TA=25C) BVCBO Collector to Base Voltage..........................................................................

HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE3055T is designed for general purpose of amplifier and switching applications. Absolute Maximum Ratings (Ta=25C) * Maximum Temperature Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ..................................................................................... 150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Tc=25C) .................................................................................... 75 W Total Power Dissipation (Ta=25C) ................................................................................... 0.6 W * Maximum Voltages and Currents (Ta=25C) BVCBO Collector to Base Voltage ...................................................................................... 70 V BVCEO Collector to Emitter Voltage.................................................................................