ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDB070AN06A0 N-Channel PowerTrench(R) MOSFET 60 V, 80 A, 7 m Features Applications * RDS(on) = 6.1 m ( Typ.) @ VGS = 10 V, ID = 80 A * Synchronous Rectification for ATX / Server / Telecom PSU * Qg(tot) = 51 nC ( Typ.) @ VGS = 10 V * Battery Protection Circuit * Low Miller Charge * Motor Drives and Uninterruptible Power Supplies * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82567 D D G G D2-PAK S S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FDB070AN06A0 Unit V DSS Drain to Source Voltage 60 V VGS Gate to Source Voltage 20 V 80 A 15 A Drain Current ID Continuous (TC < 97oC, VGS = 10V) o o Continuous (TA = 25 C, VGS = 10V, R JA = 43 C/W) Pulsed EAS PD

FDB070AN06A0_F085 N-Channel PowerTrench(R) MOSFET 60V, 80A, 7m Features Applications * r DS(ON) = 6.1m (Typ.), V GS = 10V, ID = 80A * Motor / Body Load Control * Qg(tot) = 51nC (Typ.), VGS = 10V * ABS Systems * Low Miller Charge * Powertrain Management * Low QRR Body Diode * Injection Systems * UIS Capability (Single Pulse and Repetitive Pulse) * DC-DC converters and Off-line UPS * Qualified to AEC Q101 * Distributed Power Architectures and VRMs * RoHS Compliant * Primary Switch for 12V and 24V systems Formerly developmental type 82567 D GATE G SOURCE TO-263AB DRAIN (FLANGE) S FDB SERIES MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter Ratings 60 Units V VGS Gate to Source Voltage 20 V Continuous (TC < 97oC, VGS = 10V) 80 A Continuous (TA = 25oC, VGS = 10V, R JA = 43oC/W) 15 A Drain Current ID Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Figure 4 A 190 mJ Power dissipation 175 W Derate above 25oC 1.17 W/oC Operating and Storage

FDB070AN06A0_F085 N-Channel PowerTrench(R) MOSFET 60V, 80A, 7m Features Applications * r DS(ON) = 6.1m (Typ.), V GS = 10V, ID = 80A * Motor / Body Load Control * Qg(tot) = 51nC (Typ.), VGS = 10V * ABS Systems * Low Miller Charge * Powertrain Management * Low QRR Body Diode * Injection Systems * UIS Capability (Single Pulse and Repetitive Pulse) * DC-DC converters and Off-line UPS * Qualified to AEC Q101 * Distributed Power Architectures and VRMs * RoHS Compliant * Primary Switch for 12V and 24V systems Formerly developmental type 82567 D GATE G SOURCE TO-263AB DRAIN (FLANGE) S FDB SERIES MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter Ratings 60 Units V VGS Gate to Source Voltage 20 V Continuous (TC < 97oC, VGS = 10V) 80 A Continuous (TA = 25oC, VGS = 10V, R JA = 43oC/W) 15 A Drain Current ID Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Figure 4 A 190 mJ Power dissipation 175 W Derate above 25oC 1.17 W/oC Operating and Storage

FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench(R) MOSFET 60V, 80A, 7m Features Applications * r DS(ON) = 6.1m (Typ.), V GS = 10V, ID = 80A * Motor / Body Load Control * Qg(tot) = 51nC (Typ.), VGS = 10V * ABS Systems * Low Miller Charge * Powertrain Management * Low QRR Body Diode * Injection Systems * UIS Capability (Single Pulse and Repetitive Pulse) * DC-DC converters and Off-line UPS * Qualified to AEC Q101 * Distributed Power Architectures and VRMs Formerly developmental type 82567 * Primary Switch for 12V and 24V systems D DRAIN (FLANGE) SOURCE GATE DRAIN G GATE SOURCE TO-220AB TO-263AB FDP SERIES FDB SERIES DRAIN (FLANGE) S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter Ratings 60 Units V VGS Gate to Source Voltage 20 V Continuous (TC < 97oC, VGS = 10V) 80 A Continuous (TA = 25oC, VGS = 10V, R JA = 43oC/W) 15 A Drain Current ID Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Figure 4 A 190 mJ Power dissipation 175 W Dera

FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench(R) MOSFET 60V, 80A, 7m Features Applications * r DS(ON) = 6.1m (Typ.), V GS = 10V, ID = 80A * Motor / Body Load Control * Qg(tot) = 51nC (Typ.), VGS = 10V * ABS Systems * Low Miller Charge * Powertrain Management * Low QRR Body Diode * Injection Systems * UIS Capability (Single Pulse and Repetitive Pulse) * DC-DC converters and Off-line UPS * Qualified to AEC Q101 * Distributed Power Architectures and VRMs Formerly developmental type 82567 * Primary Switch for 12V and 24V systems D DRAIN (FLANGE) SOURCE GATE DRAIN G GATE SOURCE TO-220AB TO-263AB FDP SERIES FDB SERIES DRAIN (FLANGE) S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter Ratings 60 Units V VGS Gate to Source Voltage 20 V Continuous (TC < 97oC, VGS = 10V) 80 A Continuous (TA = 25oC, VGS = 10V, R JA = 43oC/W) 15 A Drain Current ID Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Figure 4 A 190 mJ Power dissipation 175 W Dera

FDB070AN06A0 N-Channel PowerTrench(R) MOSFET 60 V, 80 A, 7 m Features Applications * RDS(on) = 6.1 m ( Typ.) @ VGS = 10 V, ID = 80 A * Synchronous Rectification for ATX / Server / Telecom PSU * Qg(tot) = 51 nC ( Typ.) @ VGS = 10 V * Battery Protection Circuit * Low Miller Charge * Motor Drives and Uninterruptible Power Supplies * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82567 D D G G D2-PAK S S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FDB070AN06A0 Unit V DSS Drain to Source Voltage 60 V VGS Gate to Source Voltage 20 V 80 A 15 A Drain Current ID Continuous (TC < 97oC, VGS = 10V) o o Continuous (TA = 25 C, VGS = 10V, R JA = 43 C/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Figure 4 A 190 mJ 175 Derate above 25oC Operating and Storage Temperature W 1.17 W/oC -55 to 175 C o Thermal Characteristics RJC Thermal Resistance Junction to Case, Max. RJA Thermal Resista

FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench(R) MOSFET 60V, 80A, 7m Features Applications * r DS(ON) = 6.1m (Typ.), V GS = 10V, ID = 80A * Motor / Body Load Control * Qg(tot) = 51nC (Typ.), VGS = 10V * ABS Systems * Low Miller Charge * Powertrain Management * Low QRR Body Diode * Injection Systems * UIS Capability (Single Pulse and Repetitive Pulse) * DC-DC converters and Off-line UPS * Distributed Power Architectures and VRMs * Primary Switch for 12V and 24V systems Formerly developmental type 82567 D DRAIN (FLANGE) SOURCE GATE DRAIN G GATE SOURCE TO-220AB TO-263AB FDP SERIES FDB SERIES DRAIN (FLANGE) S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter Ratings 60 Units V VGS Gate to Source Voltage 20 V Continuous (TC < 97oC, VGS = 10V) 80 A Continuous (TA = 25oC, VGS = 10V, R JA = 43oC/W) 15 A Drain Current ID Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Figure 4 A 190 mJ Power dissipation 175 W Derate above 25oC 1.17 W/oC

ertrain Management Injection Systems DC-DC converters and Off -line UPS Distributed Pow er Architectures and VRMs Primary Sw itch for 12V and 24V systems Formerly developmental type 82567 Ordering Information Device Output Voltage Marking Package Shipping FDB070AN06A0-F085 TBD FDB070AN06A0 TO-263AB Tape and Reel (c) 2017 Semiconductor Components Industries, LLC August-2017, Rev. 2 Publication Order Number: FDB070AN06A0-F085/D FDB070AN06A0-F085 -- N-Channel PowerTrench(R) MOSFET FDB070AN06A0-F085 N-Channel PowerTrench(R) MOSFET 60V, 80A, 7m TC = 25 unless otherwise noted Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings

FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench(R) MOSFET 60 V, 80 A, 7 m Features Applications * R DS(ON) = 6.1 m (Typ.), VGS = 10 V, ID = 80 A * Synchronous Rectification for ATX / Server / Telecom PSU * Qg(tot) = 51 nC (Typ.), VGS = 10 V * Battery Protection Circuit * Low Miller Charge * Motor Drives and Uninterruptible Power Supplies * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82555 D D G G DS D2-PAK TO-220 G S S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FDB070AN06A0 FDP070AN06A0 Unit V DSS Drain to Source Voltage 60 V VGS Gate to Source Voltage 20 V Continuous (TC < 97oC, VGS = 10V) 80 A Continuous (TA = 25oC, VGS = 10V, R JA = 43oC/W) 15 A Drain Current ID Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Figure 4 A 190 mJ Power dissipation 175 W Derate above 25oC 1.17 W/oC Operating and Storage Temperature o -55 to 175 C Thermal Characteristics RJC Thermal Resistance Junction

FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench(R) MOSFET 60V, 80A, 7m Features Applications * r DS(ON) = 6.1m (Typ.), V GS = 10V, ID = 80A * Motor / Body Load Control * Qg(tot) = 51nC (Typ.), VGS = 10V * ABS Systems * Low Miller Charge * Powertrain Management * Low QRR Body Diode * Injection Systems * UIS Capability (Single Pulse and Repetitive Pulse) * DC-DC converters and Off-line UPS * Qualified to AEC Q101 * Distributed Power Architectures and VRMs Formerly developmental type 82567 * Primary Switch for 12V and 24V systems D DRAIN (FLANGE) SOURCE GATE DRAIN G GATE SOURCE TO-220AB TO-263AB FDP SERIES FDB SERIES DRAIN (FLANGE) S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter Ratings 60 Units V VGS Gate to Source Voltage 20 V Continuous (TC < 97oC, VGS = 10V) 80 A Continuous (TA = 25oC, VGS = 10V, R JA = 43oC/W) 15 A Drain Current ID Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Figure 4 A 190 mJ Power dissipation 175 W Dera

FDB070AN06A0 N-Channel PowerTrench(R) MOSFET 60 V, 80 A, 7 m Features Applications * RDS(on) = 6.1 m ( Typ.) @ VGS = 10 V, ID = 80 A * Synchronous Rectification for ATX / Server / Telecom PSU * Qg(tot) = 51 nC ( Typ.) @ VGS = 10 V * Battery Protection Circuit * Low Miller Charge * Motor Drives and Uninterruptible Power Supplies * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82567 D D G G D2-PAK S S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FDB070AN06A0 Unit V DSS Drain to Source Voltage 60 V VGS Gate to Source Voltage 20 V 80 A 15 A Drain Current ID Continuous (TC < 97oC, VGS = 10V) o o Continuous (TA = 25 C, VGS = 10V, R JA = 43 C/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Figure 4 A 190 mJ 175 Derate above 25oC Operating and Storage Temperature W 1.17 W/oC -55 to 175 C o Thermal Characteristics RJC Thermal Resistance Junction to Case, Max. RJA Thermal Resista

ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDB070AN06A0_F085 N-Channel PowerTrench(R) MOSFET 60V, 80A, 7m Features Applications rDS(ON) = 6.1m (Typ.), VGS = 10V, ID = 80A Qualified to AEC Q101 Qg(tot) = 51nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) RoHS Compliant Motor / Body Load Control ABS Systems Powertrain Management Injection Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems Formerly developmental type 82567 Ordering Information Device Output Voltage Marking Package Shipping FDB070AN06A0_F085 TBD FDB070AN06A0 TO-263AB Tape and Reel (c) 2017 Semiconductor Components Industries, LLC FDB070AN06A0_F085 * Rev. 1.2

Package FDP038AN06A01 N 60 Single 0.0038 .0074@6V 95 80 310 TO-220 FDI038AN06A01 N 60 Single 0.0038 .0074@6V 95 80 310 TO-262 (I2PAK) FDB050AN06A01 N 60 Single 0.005 .011@6V 61 80 245 TO-263 (D2PAK) FDP050AN06A01 N 60 Single 0.005 .011@6V 61 80 245 TO-220 FDB070AN06A01 N 60 Single 0.007 - 51 80 175 TO-263(D2PAK) FDD070AN06A01 N 60 Single 0.007 - 51 50 175 TO-252 (DPAK) FDP070AN06A01 N 60 Single 0.007 - 51 80 175 TO-220 FDB10AN06A01 N 60 Single 0.0105 .027@6V 28 75 135 TO-263(D2PAK) FDD10AN06A01 N 60 Single 0.0105 .027@6V 28 50 135 TO-252 (DPAK) FDP10AN06A01 N 60 Single 0.0105 .027@6V 28 75 135 TO-220 FDB14AN06LA01 N 60 Single 0.0116 .0146@5V 24 60 125 TO-263 (D2PAK) FDD14AN06LA01 N 60 Single 0.0116 .0146@5V 24 50 125 TO-252 (DPAK) FDP14AN06LA01 N 60 Single 0.0116 .0146@5V 24 60 125 TO-220 FDB13AN06A01 N 60 Single 0.0135 .034@6V 22 62 115 TO-263 (D2PAK) FDD13AN06A0_F085 N 60 Single 0.0135 .034@6V 22 50 115 TO-252 (DPAK) FDP13AN06A01 N 60 Single 0.0135 .034@6V 22 62 115 TO-220 FDB20AN06A01 N 60 Sin

I2PAK) FDB050AN06A0 60 Single 0.005 .011 @ 6V 61 80 245 TO-263 (D2PAK) FDD050AN06A0 60 Single 0.005 .011 @ 6V 61 50 245 TO-252 (DPAK) FDP050AN06A0 60 Single 0.005 .011 @ 6V 61 80 245 TO-220 FDB5800 60 Single 0.006 .007 @ 5V|.0072 104 80 242 TO-263 (D2PAK) FDB070AN06A0 60 Single 0.007 - 51 80 175 TO-263 (D2PAK) FDD070AN06A0 60 Single 0.007 - 51 50 175 TO-252 (DPAK) FDP070AN06A0 60 Single 0.007 - 51 80 175 TO-220 FDB10AN06A0 60 Single 0.0105 .027 @ 6V 28 75 135 TO-263 (D2PAK) FDD10AN06A0 60 Single 0.0105 .027 @ 6V 28 50 135 TO-252 (DPAK) FDP10AN06A0 60 Single 0.0105 .027 @ 6V 28 75 135 TO-220 FDB14AN06LA0 60 Single 0.0116 .0146 @ 5V 24 60 125 TO-263 (D2PAK) FDD14AN06LA0 60 Single 0.0116 .0146 @ 5V 24 50 125 TO-252 (DPAK) FDP14AN06LA0 60 Single 0.0116 .0146 @ 5V 24 60 125 TO-220 FDB13AN06A0 60 Single 0.0135 .034 @ 6V 22 62 115 TO-263 (D2PAK) FDD13AN06A0 60 Single 0.0135 .034 @ 6V 22 50 115 TO-252 (DPAK) FDP13AN06A0 60 Single 0.0135 .034 @ 6V 22 62 115 TO-220 FDB20AN06A0 60 Single 0.02 - 15 45 90 TO-

880_NF080 FDD8880_NL FDD8896_NF054 FDD8896_NL FDFS2P103 FDFS2P103A FDFS2P106A_NL FDFS6N303 FDFS6N303_NL FDG311N_NL FDG313N_NL FDG314P FDG316P_NL Replacement Product(s) FAN5333BSX NONE NONE FAN5607HMPX NONE FAN6520AMX FCD4N60TM_WS FCD5N60TM_WS FCD7N60TM_WS FDB070AN06A0 FDB10AN06A0 FDD24AN06LA0 FDB2552 FDB3652 FDB8880 FDB6035AL FDB8896 FDB7030BL FDB8896 FDC2612 FDC3601N FDC602P FDC6036P_F077 FDC604P FDC606P FDC6306P FDC6327C FDC6333C FDC637BNZ FDC634P FDC640P FDC642P FDC6506P FDC655BN FDC658AP FDC658AP FDC796N_F077 FQD20N06TM FDD14AN06LA0_SB82248 FDD24AN06LA0_SB82249 FDS3672 FDD3690 FDD3706 FDD4685_F085 FDD5612 FDD5614P FDD5670 FDD5690 FDD8882 FDD8882 FDD8880 FDD8880 FDD8880 FDD8880 FDD8880 FDD8896 FDD6685 FDD8874 FDD8882 FDD6N50TM_WS FDD8880 FDD8778 FDD8876 FDD8878 FDD8880 FDD8880 FDD8896 FDD8896 NONE NONE FDFS2P106A FDFS6N754 FDFS6N754 FDG311N FDG313N NONE FDG316P Manufacturer of Replacement Product(s) Fairchild Semiconductor N/A N/A Fairchild Semiconductor N/A Fairchild Semiconductor Fairchild S