BSS64LT1G Driver Transistor NPN Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO 80 Vdc Collector -Base Voltage VCBO 120 Vdc Emitter -Base Voltage VEBO 5.0 Vdc IC 100 mAdc Collector Current - Continuous 1 BASE 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol Max 1 Unit 2 PD 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C RqJA SOT-23 (TO-236) CASE 318 STYLE 6 PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be

BSS64LT1G Driver Transistor NPN Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO 80 Vdc Collector -Base Voltage VCBO 120 Vdc Emitter -Base Voltage VEBO 5.0 Vdc IC 100 mAdc Collector Current - Continuous 1 BASE 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol Max 1 Unit 2 PD 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C RqJA SOT-23 (TO-236) CASE 318 STYLE 6 PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be

BSS64LT1G Driver Transistor NPN Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO 80 Vdc Collector -Base Voltage VCBO 120 Vdc Emitter -Base Voltage VEBO 5.0 Vdc IC 100 mAdc Collector Current - Continuous 1 BASE 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C PD RqJA 1 2 SOT-23 (TO-236) CASE 318 STYLE 6 PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to s

Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BSS64LT1 SOT-23 3,000 / Tape & Reel SOT-23 (Pb-Free) 3,000 / Tape & Reel BSS64LT1G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 February, 2006 - Rev. 4 1 Publication Order Number: BSS64LT1/D BSS64LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 80 - 120 - 5.0 - - - 0.1 500 - 200 20 - - - 0.15 0.2 - - 60 - - 20 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 4.0 mAdc) V(BR)CEO Collector -Base Breakdown Voltage (IC = 100 mAdc) V(BR)CBO Emitter -Base Breakdown Voltage (IE = 100 mAdc) V(BR)EBO Collector Cutoff Current (VCE = 90 Vdc) (TA = 150C) ICBO Emitter Cutoff Current (VEB = 4.