BSS64LT1/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector - Emitter Voltage VCEO 80 Vdc Collector - Base Voltage VCBO 120 Vdc Emitter - Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit Total Device Dissipation FR- 5 Board(1) TA = 25C Derate above 25C PD 225 mW 1.8 mW/C Thermal Resistance Junction to Ambient RqJA 556 C/W PD 300 mW 2.4 mW/C RqJA 417 C/W TJ, Tstg - 55 to +150 C Collector Current -- Continuous CASE 318 - 08, STYLE 6 SOT- 23 (TO - 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING BSS64LT1 = AM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 80 -- 120 -- 5.0 -- -- -- 0.1 500 -- 200 Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 4.0 mAdc) V(BR)CEO Collector - Base Breakdown Voltage (IC

c) (TA = 150C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Vdc Vdc Vdc Adc nAdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 1 Publication Order Number: BSS64LT1/D BSS64LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 20 -- -- -- 0.15 0.2 -- -- 60 -- -- 20 Unit ON CHARACTERISTICS DC Current Gain (VCE = 1.0 Vdc, IC = 10 mAdc) HFE Collector-Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 400 Adc) (IC = 50 mAdc, IB = 15 mAdc) VCE(sat) Forward Base-Emitter Voltage VBE(sat) -- Vdc -- SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 20 MHz) fT Output Capacitance (VCB = 10 Vdc, f = 1.0 MHz) MHz Cob http://onsemi.com 2 pF BSS64LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of t

n tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2009 August, 2009 - Rev. 5 1 Publication Order Number: BSS64LT1/D BSS64LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 80 - 120 - 5.0 - - - 0.1 500 - 200 20 - - - 0.15 0.2 - - 60 - - 20 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 4.0 mAdc) V(BR)CEO Collector -Base Breakdown Voltage (IC = 100 mAdc) V(BR)CBO Emitter -Base Breakdown Voltage (IE = 100 mAdc) V(BR)EBO Collector Cutoff Current (VCE = 90 Vdc) (TA = 150C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Vdc Vdc Vdc mAdc nAdc ON CHARACTERISTICS DC Current Gain (VCE = 1.0 Vdc, IC = 10 mAdc) HFE Collector -Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 400 mAdc) (IC = 50 mAdc, IB = 15 mAdc) VCE(sat) Forward Base -Emitter Voltage VBE(sat) - Vdc - SMALL-SIGNAL CHARACTERISTIC

tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 February, 2006 - Rev. 4 1 Publication Order Number: BSS64LT1/D BSS64LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 80 - 120 - 5.0 - - - 0.1 500 - 200 20 - - - 0.15 0.2 - - 60 - - 20 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 4.0 mAdc) V(BR)CEO Collector -Base Breakdown Voltage (IC = 100 mAdc) V(BR)CBO Emitter -Base Breakdown Voltage (IE = 100 mAdc) V(BR)EBO Collector Cutoff Current (VCE = 90 Vdc) (TA = 150C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Vdc Vdc Vdc mAdc nAdc ON CHARACTERISTICS DC Current Gain (VCE = 1.0 Vdc, IC = 10 mAdc) HFE Collector -Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 400 mAdc) (IC = 50 mAdc, IB = 15 mAdc) VCE(sat) Forward Base -Emitter Voltage VBE(sat) - Vdc - SMALL- SIGNAL CHARACTERISTIC

BSS64LT1/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector - Emitter Voltage VCEO 80 Vdc Collector - Base Voltage VCBO 120 Vdc Emitter - Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit Total Device Dissipation FR- 5 Board(1) TA = 25C Derate above 25C PD 225 mW 1.8 mW/C Thermal Resistance Junction to Ambient RqJA 556 C/W PD 300 mW 2.4 mW/C RqJA 417 C/W TJ, Tstg - 55 to +150 C Collector Current -- Continuous CASE 318 - 08, STYLE 6 SOT- 23 (TO - 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING BSS64LT1 = AM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 80 -- 120 -- 5.0 -- -- -- 0.1 500 -- 200 Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 4.0 mAdc) V(BR)CEO Collector - Base Breakdown Voltage (IC

tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 1994 November, 2016 - Rev. 6 1 Publication Order Number: BSS64LT1/D BSS64LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max 80 - 120 - 5.0 - - - 0.1 500 - 200 20 - - - 0.15 0.2 - - 60 - - 20 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 4.0 mAdc) V(BR)CEO Collector -Base Breakdown Voltage (IC = 100 mAdc) V(BR)CBO Emitter -Base Breakdown Voltage (IE = 100 mAdc) V(BR)EBO Collector Cutoff Current (VCE = 90 Vdc) (TA = 150C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Vdc Vdc Vdc mAdc nAdc ON CHARACTERISTICS DC Current Gain (VCE = 1.0 Vdc, IC = 10 mAdc) HFE Collector -Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 400 mAdc) (IC = 50 mAdc, IB = 15 mAdc) VCE(sat) Forward Base -Emitter Voltage VBE(sat) - Vdc - SMALL- SIGNAL CHARACTERISTI

(TA = 150C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Vdc Vdc Vdc Adc nAdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 November, 2001 - Rev. 3 1 Publication Order Number: BSS64LT1/D BSS64LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 20 -- -- -- 0.15 0.2 -- -- 60 -- -- 20 Unit ON CHARACTERISTICS DC Current Gain (VCE = 1.0 Vdc, IC = 10 mAdc) HFE Collector-Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 400 Adc) (IC = 50 mAdc, IB = 15 mAdc) VCE(sat) Forward Base-Emitter Voltage VBE(sat) -- Vdc -- SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 20 MHz) fT Output Capacitance (VCB = 10 Vdc, f = 1.0 MHz) MHz Cob http://onsemi.com 2 pF BSS64LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of t

tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 1994 November, 2016 - Rev. 6 1 Publication Order Number: BSS64LT1/D BSS64LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max 80 - 120 - 5.0 - - - 0.1 500 - 200 20 - - - 0.15 0.2 - - 60 - - 20 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 4.0 mAdc) V(BR)CEO Collector -Base Breakdown Voltage (IC = 100 mAdc) V(BR)CBO Emitter -Base Breakdown Voltage (IE = 100 mAdc) V(BR)EBO Collector Cutoff Current (VCE = 90 Vdc) (TA = 150C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Vdc Vdc Vdc mAdc nAdc ON CHARACTERISTICS DC Current Gain (VCE = 1.0 Vdc, IC = 10 mAdc) HFE Collector -Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 400 mAdc) (IC = 50 mAdc, IB = 15 mAdc) VCE(sat) Forward Base -Emitter Voltage VBE(sat) - Vdc - SMALL- SIGNAL CHARACTERISTI

(TA = 150C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Vdc Vdc Vdc Adc nAdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 372 Publication Order Number: BSS64LT1/D BSS64LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 20 -- -- -- 0.15 0.2 -- -- 60 -- -- 20 Unit ON CHARACTERISTICS DC Current Gain (VCE = 1.0 Vdc, IC = 10 mAdc) HFE Collector-Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 400 Adc) (IC = 50 mAdc, IB = 15 mAdc) VCE(sat) Forward Base-Emitter Voltage VBE(sat) -- Vdc -- SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 20 MHz) fT Output Capacitance (VCB = 10 Vdc, f = 1.0 MHz) MHz Cob http://onsemi.com 373 pF DA121TT1 Preferred Device Silicon Switching Diode MAXIMUM RATINGS (TA = 25C) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Wid

A = 150C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Vdc Vdc Vdc Adc nAdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 November, 2001 - Rev. 3 538 Publication Order Number: BSS64LT1/D BSS64LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max 20 -- -- -- 0.15 0.2 -- -- 60 -- -- 20 Unit ON CHARACTERISTICS DC Current Gain (VCE = 1.0 Vdc, IC = 10 mAdc) HFE Collector -Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 400 Adc) (IC = 50 mAdc, IB = 15 mAdc) VCE(sat) Forward Base -Emitter Voltage VBE(sat) -- Vdc -- SMALL-SIGNAL CHARACTERISTICS Current -Gain -- Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 20 MHz) fT Output Capacitance (VCB = 10 Vdc, f = 1.0 MHz) Cob http://onsemi.com 539 MHz pF BSS64LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion

(TA = 150C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Vdc Vdc Vdc Adc nAdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 372 Publication Order Number: BSS64LT1/D BSS64LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 20 -- -- -- 0.15 0.2 -- -- 60 -- -- 20 Unit ON CHARACTERISTICS DC Current Gain (VCE = 1.0 Vdc, IC = 10 mAdc) HFE Collector-Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 400 Adc) (IC = 50 mAdc, IB = 15 mAdc) VCE(sat) Forward Base-Emitter Voltage VBE(sat) -- Vdc -- SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 20 MHz) fT Output Capacitance (VCB = 10 Vdc, f = 1.0 MHz) MHz Cob http://onsemi.com 373 pF DA121TT1 Preferred Device Silicon Switching Diode MAXIMUM RATINGS (TA = 25C) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Wid

(TA = 150C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Vdc Vdc Vdc Adc nAdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 372 Publication Order Number: BSS64LT1/D BSS64LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 20 -- -- -- 0.15 0.2 -- -- 60 -- -- 20 Unit ON CHARACTERISTICS DC Current Gain (VCE = 1.0 Vdc, IC = 10 mAdc) HFE Collector-Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 400 Adc) (IC = 50 mAdc, IB = 15 mAdc) VCE(sat) Forward Base-Emitter Voltage VBE(sat) -- Vdc -- SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 20 MHz) fT Output Capacitance (VCB = 10 Vdc, f = 1.0 MHz) MHz Cob http://onsemi.com 373 pF DA121TT1 Preferred Device Silicon Switching Diode MAXIMUM RATINGS (TA = 25C) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Wid

(TA = 150C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Vdc Vdc Vdc Adc nAdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 2 372 Publication Order Number: BSS64LT1/D BSS64LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 20 -- -- -- 0.15 0.2 -- -- 60 -- -- 20 Unit ON CHARACTERISTICS DC Current Gain (VCE = 1.0 Vdc, IC = 10 mAdc) HFE Collector-Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 400 Adc) (IC = 50 mAdc, IB = 15 mAdc) VCE(sat) Forward Base-Emitter Voltage VBE(sat) -- Vdc -- SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 20 MHz) fT Output Capacitance (VCB = 10 Vdc, f = 1.0 MHz) MHz Cob http://onsemi.com 373 pF