205, 202 246, 255 249 242, 249 242, 249 242, 249 865 869 787 40, 45 837 29, 35 242, 249 242, 249 193 787 61 61 196 196 196 205 811 813 815 826 Bipolar Transistors General-Purpose Transistors V(BR)CEO IC mA Max Min MPSW55 60 500 MPS6729 80 MPSW06 MPSW56 - BSS64LT1 BC846ALT1 BC846BLT1 - - - MMBT2484LT1 MMBT6428LT1 - MMBT6429LT1 BC817-16LT1 BC817-25LT1 BC817-40LT1 - - - BC847ALT1 BC847BLT1 BC847CLT1 BC850BLT1 BC850CLT1 - - MMBT2222ALT1 MMBT3904LT1 - MMBT4401LT1 - BC848ALT1 BC848BLT1 BC848CLT1 BC849BLT1 BC849CLT1 - - - - - MMBT5088LT1 MMBT5089LT1 MMBT4124LT1 BSS63LT1 - - - BC856ALT1 BC856BLT1 MMBT2907ALT1 - - MMBT5087LT1 - - - - BC807-16LT1 BC807-25LT1 BC807-40LT1 - - - - - BC857ALT1 BC857BLT1 - - MMBT3906LT1 - MMBT4403LT1 - - - - - BC858ALT1 BC858BLT1 BC858CLT1 BC859BLT1 BC859CLT1 - - - NPN MPSW05 - PNP hFE fT NF Max MHz Min dB Max 60 - 50 250 500 50 250 - - 80 500 80 - 50 - 100 80 65 65 65 65 60 60 50 50 45 45 45 45 45 45 45 45 45 45 45 45 45 45 40 40 40 40 40 30 30 30 30 30 30 30 30 30 30 30 25 2

BSS64LT1 Driver Transistor NPN Silicon Features * Pb-Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO 80 Vdc Collector -Base Voltage VCBO 120 Vdc Emitter -Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit 225 1.8 mW mW/C 556 C/W Collector Current - Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 3 PD RqJA 1 2 SOT-23 (TO-236) CASE 318 STYLE 6 PD 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits a

BSS64LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 120 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 6 SOT-23 (TO-236AB) COLLECTOR 3 1 BASE DEVICE MARKING 2 EMITTER BSS64LT1 = AM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 80 -- 120 -- 5.0 -- -- -- 0.1 500 -- 200 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 4.0 mAdc) V(BR)CEO Collector-Base Breakdown Voltage (IC = 100 Adc) V(BR)CBO Emitter-Base Brea

rly high current levels. Pinout: 1-Base, 2-Emitter, 3-Collector hFE@ IC Device Marking V(BR)CEO VCE(sat) VBE(sat) Min Max mA 0.25 0.15 -- -- 100 20 -- -- 100 10 - 0.25 - 0.25 - 0.90 -- 30 100 -- -- 25 100 Case 318-08 -- TO-236AB (SOT-23) -- NPN MMBTA06LT1 BSS64LT1 1GM AM 80 80 Case 318-08 -- TO-236AB (SOT-23) -- PNP BSS63LT1 MMBTA56LT1 T1 2GM 100 80 The following devices are designed to conserve energy. They offer ultra-low collector saturation voltage. Case 318-08 -- TO-236AB (SOT-23) -- PNP MMBT1010LT1 GLP 15 0.1 1.1 300 600 100 15 0.1 1.1 300 600 100 Case 318-03 -- SC-59 -- PNP MSD1010T1 GLP Table 21. Plastic-Encapsulated Surface Mount General Purpose Amplifiers Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector hFE@ IC Device Marking V(BR)CEO Min Max mA BH 80 40 250 150 80 40 25 150 Case 318E-04 -- SOT-223 -- NPN BCP56T1 Case 318E-04 -- SOT-223 -- PNP Pinout: 1-Gate, 2-Drain, 3-Source, 4-Drain BCP53T1 AH Devices listed in bold, italic are Motorola preferred devices. Selector Guide 1-16 Motor

205, 202 246, 255 249 242, 249 242, 249 242, 249 865 869 787 40, 45 837 29, 35 242, 249 242, 249 193 787 61 61 196 196 196 205 811 813 815 826 Bipolar Transistors General-Purpose Transistors V(BR)CEO IC mA Max Min MPSW55 60 500 MPS6729 80 MPSW06 MPSW56 - BSS64LT1 BC846ALT1 BC846BLT1 - - - MMBT2484LT1 MMBT6428LT1 - MMBT6429LT1 BC817-16LT1 BC817-25LT1 BC817-40LT1 - - - BC847ALT1 BC847BLT1 BC847CLT1 BC850BLT1 BC850CLT1 - - MMBT2222ALT1 MMBT3904LT1 - MMBT4401LT1 - BC848ALT1 BC848BLT1 BC848CLT1 BC849BLT1 BC849CLT1 - - - - - MMBT5088LT1 MMBT5089LT1 MMBT4124LT1 BSS63LT1 - - - BC856ALT1 BC856BLT1 MMBT2907ALT1 - - MMBT5087LT1 - - - - BC807-16LT1 BC807-25LT1 BC807-40LT1 - - - - - BC857ALT1 BC857BLT1 - - MMBT3906LT1 - MMBT4403LT1 - - - - - BC858ALT1 BC858BLT1 BC858CLT1 BC859BLT1 BC859CLT1 - - - NPN MPSW05 - PNP hFE fT NF Max MHz Min dB Max 60 - 50 250 500 50 250 - - 80 500 80 - 50 - 100 80 65 65 65 65 60 60 50 50 45 45 45 45 45 45 45 45 45 45 45 45 45 45 40 40 40 40 40 30 30 30 30 30 30 30 30 30 30 30 25 2

BSS64LT1/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector - Emitter Voltage VCEO 80 Vdc Collector - Base Voltage VCBO 120 Vdc Emitter - Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit Total Device Dissipation FR- 5 Board(1) TA = 25C Derate above 25C PD 225 mW 1.8 mW/C Thermal Resistance Junction to Ambient RqJA 556 C/W PD 300 mW 2.4 mW/C RqJA 417 C/W TJ, Tstg - 55 to +150 C Collector Current -- Continuous CASE 318 - 08, STYLE 6 SOT- 23 (TO - 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING BSS64LT1 = AM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 80 -- 120 -- 5.0 -- -- -- 0.1 500 -- 200 Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 4.0 mAdc) V(BR)CEO Collector - Base Breakdown

BSS64LT1G Driver Transistor NPN Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO 80 Vdc Collector -Base Voltage VCBO 120 Vdc Emitter -Base Voltage VEBO 5.0 Vdc IC 100 mAdc Collector Current - Continuous 1 BASE 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C PD RqJA 1 2 SOT-23 (TO-236) CASE 318 STYLE 6 PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to s

BSS64LT1G Driver Transistor NPN Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO 80 Vdc Collector -Base Voltage VCBO 120 Vdc Emitter -Base Voltage VEBO 5.0 Vdc IC 100 mAdc Collector Current - Continuous 1 BASE 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol Max 1 Unit 2 PD 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C RqJA SOT-23 (TO-236) CASE 318 STYLE 6 PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be

BSS64LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 120 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C PD 225 mW 1.8 mW/C Thermal Resistance Junction to Ambient RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 6 SOT-23 (TO-236AB) COLLECTOR 3 1 BASE DEVICE MARKING 2 EMITTER BSS64LT1 = AM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 80 -- 120 -- 5.0 -- -- -- 0.1 500 -- 200 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 4.0 mAdc) V(BR)CEO Collector-Base Breakdown Voltage (IC = 100 Adc) V(BR)CBO Emitter-Base Brea

BSS64LT1/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector - Emitter Voltage VCEO 80 Vdc Collector - Base Voltage VCBO 120 Vdc Emitter - Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit Total Device Dissipation FR- 5 Board(1) TA = 25C Derate above 25C PD 225 mW 1.8 mW/C Thermal Resistance Junction to Ambient RqJA 556 C/W PD 300 mW 2.4 mW/C RqJA 417 C/W TJ, Tstg - 55 to +150 C Collector Current -- Continuous CASE 318 - 08, STYLE 6 SOT- 23 (TO - 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING BSS64LT1 = AM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 80 -- 120 -- 5.0 -- -- -- 0.1 500 -- 200 Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 4.0 mAdc) V(BR)CEO Collector - Base Breakdown

BSS64LT1G Driver Transistor NPN Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO 80 Vdc Collector -Base Voltage VCBO 120 Vdc Emitter -Base Voltage VEBO 5.0 Vdc IC 100 mAdc Collector Current - Continuous 1 BASE 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol Max 1 Unit 2 PD 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C RqJA SOT-23 (TO-236) CASE 318 STYLE 6 PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be

205, 202 246, 255 249 242, 249 242, 249 242, 249 865 869 787 40, 45 837 29, 35 242, 249 242, 249 193 787 61 61 196 196 196 205 811 813 815 826 Bipolar Transistors General-Purpose Transistors V(BR)CEO IC mA Max Min MPSW55 60 500 MPS6729 80 MPSW06 MPSW56 - BSS64LT1 BC846ALT1 BC846BLT1 - - - MMBT2484LT1 MMBT6428LT1 - MMBT6429LT1 BC817-16LT1 BC817-25LT1 BC817-40LT1 - - - BC847ALT1 BC847BLT1 BC847CLT1 BC850BLT1 BC850CLT1 - - MMBT2222ALT1 MMBT3904LT1 - MMBT4401LT1 - BC848ALT1 BC848BLT1 BC848CLT1 BC849BLT1 BC849CLT1 - - - - - MMBT5088LT1 MMBT5089LT1 MMBT4124LT1 BSS63LT1 - - - BC856ALT1 BC856BLT1 MMBT2907ALT1 - - MMBT5087LT1 - - - - BC807-16LT1 BC807-25LT1 BC807-40LT1 - - - - - BC857ALT1 BC857BLT1 - - MMBT3906LT1 - MMBT4403LT1 - - - - - BC858ALT1 BC858BLT1 BC858CLT1 BC859BLT1 BC859CLT1 - - - NPN MPSW05 - PNP hFE fT NF Max MHz Min dB Max 60 - 50 250 500 50 250 - - 80 500 80 - 50 - 100 80 65 65 65 65 60 60 50 50 45 45 45 45 45 45 45 45 45 45 45 45 45 45 40 40 40 40 40 30 30 30 30 30 30 30 30 30 30 30 25 2

uous 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature CASE 318 -08, STYLE 6 SOT-23 (TO -236AB) 66 7 DEVICE MARKING BSS64LT1 = AM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 80 -- 120 -- 5.0 -- -- -- 0.1 500 -- 200 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 4.0 mAdc) V(BR)CEO Collector -Base Breakdown Voltage (IC = 100 Adc) V(BR)CBO Emitter -Base Breakdown Voltage (IE = 100 Adc) V(BR)EBO Collector Cutoff Current (VCE = 90 Vdc) (TA = 150C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO Vdc Vdc Vdc Adc nAdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2001 November, 2001 - Rev. 3 538 Publication Order Number: BSS64LT1/D BSS64LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Co

BSS64LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 120 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 6 SOT-23 (TO-236AB) COLLECTOR 3 1 BASE DEVICE MARKING 2 EMITTER BSS64LT1 = AM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 80 -- 120 -- 5.0 -- -- -- 0.1 500 -- 200 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 4.0 mAdc) V(BR)CEO Collector-Base Breakdown Voltage (IC = 100 Adc) V(BR)CBO Emitter-Base Brea

BSS64LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector-Emitter Voltage V CEO 80 Vdc Collector-Base Voltage V CBO 120 Vdc Emitter-Base Voltage V EBO 5.0 Vdc 100 mAdc Collector Current -- Continuous IC CASE 318-08, STYLE 6 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C 417 -55 to +150 C/W C RJA TJ , Tstg DEVICE MARKING BSS64LT1 = AM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 80 -- Vdc Collector-Base Breakdown Voltage (I C = 100 Adc ) V (BR)CBO 120 -- Vdc Emitter-Base Breakdown Voltage V (BR)EBO 5.0 -- Vdc ( V CB = 90 Vdc ) -- 0.1 ( T A = 150C ) Emitter Cutoff Current --