BSS64 NPN Silicon AF and Switching Transistors 3 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX42, BSS63 (PNP) 2 1 Type Marking Pin Configuration BCX41 EKs 1=B 2=E 3=C SOT23 BSS64 AMs 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BSS64 BCX41 VCEO 80 125 Collector-base voltage VCBO 120 125 Emitter-base voltage VEBO 5 5 DC collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 79 C Ptot 330 mW Junction temperature Tj 150 C Storage temperature Tstg 800 1 V mA A mA -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-20-2001 BCX41, BSS64 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. typ. Unit max. DC Characteristics Co

OT89 BF820W 1Vt; 1V- SC-70/SOT323 BSR40 AR1 SC-62/SOT89 BF821 1Wp; 1Wt SOT23 BSR41 AR2 SC-62/SOT89 BF822 1Xp; 1Xt SOT23 BSR42 AR3 SC-62/SOT89 BF822W 1Wt; 1W- SC-70/SOT323 BSR43 AR4 SC-62/SOT89 BF823 1Yp; 1Yt SOT23 BSS63 BMp; BMt SOT23 BF824 F8p; F8t SOT23 BSS64 AMp; AMt SOT23 BF824W F8t; F8- SC-70/SOT323 BST15 BT1 SC-62/SOT89 BF840 NCp; NCt SOT23 BST16 BT2 SC-62/SOT89 BFS19 F2p; F2t SOT23 BST39 AT1 SC-62/SOT89 BFS20 G1p; G1t SOT23 BST40 AT2 SC-62/SOT89 BFS20W N1t; N1- SC-70/SOT323 BST50 AS1 SC-62/SOT89 BRY61 A5p; A5t SOT23 BST51 AS2 SC-62/SOT89 BRY62 A51 SOT143B BST52 AS3 SC-62/SOT89 BSP16 BSP16 SC-73/SOT223 BST60 BS1 SC-62/SOT89 BSP19 BSP19 SC-73/SOT223 BST61 BS2 SC-62/SOT89 BSP20 BSP20 SC-73/SOT223 BST62 BS3 SC-62/SOT89 BSP31 BSP31 SC-73/SOT223 BSV52 B2p; B2t SOT23 BSP32 BSP32 SC-73/SOT223 PDTA114EE 03 SC-75/SOT416 BSP33 BSP33 SC-73/SOT223 PDTA114EEF 03 SC-89/SOT490 BSP41 BSP41 SC-73/SOT223 PDTA114EK 03 SC-59/SOT346 BSP43 BSP43 SC-73/SOT223 PDTA114ET p03; t03 SOT23 BSP50 BSP50 SC-73/SOT223 PDTA

BSS64 NPN high voltage transistor Product specification Supersedes data of 2004 Jan 16 2004 Mar 12 Philips Semiconductors Product specification NPN high voltage transistor BSS64 FEATURES PINNING * Low current (max. 100 mA) PIN * High voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector * High-voltage general purpose and switching applications * Intended for thick and thin-film circuit applications. handbook, halfpage DESCRIPTION 3 3 NPN transistor in a SOT23 plastic package. PNP complement: BSS63. 1 MARKING 1 MARKING CODE(1) TYPE NUMBER BSS64 Top view 60* or AM 2 2 MAM255 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BSS64 - DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNI

BSS64 NPN Silicon AF and Switching Transistors 3 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX42, BSS63 (PNP) 2 1 Type Marking Pin Configuration BCX41 EKs 1=B 2=E 3=C SOT23 BSS64 AMs 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BSS64 BCX41 VCEO 80 125 Collector-base voltage VCBO 120 125 Emitter-base voltage VEBO 5 5 DC collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 79 C Ptot 330 mW Junction temperature Tj 150 C Storage temperature Tstg 800 1 V mA A mA -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-20-2001 BCX41, BSS64 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. typ. Unit max. DC Characteristics Co

BSS64 NPN high-voltage transistor Product specification Supersedes data of 1997 Sep 04 Philips Semiconductors VT 1999 Apr 15 PHILIPSPhilips Semiconductors Product specification meee ee ee ee NPN high-voltage transistor BSS64 meee ee FEATURES PINNING e Low current (max. 100 mA) PIN DESCRIPTION e High voltage (max. 80 V). 1 base 2 emitter APPLICATIONS 3 collector e High-voltage general purpose and switching applications e Intended for application in thick and thin-film circuits. DESCRIPTION NPN transistor in a SOT23 plastic package. [4 8 3 PNP complement: BSS63. 1 MARKING TYPE NUMBER MARKING CODE) IH 1 IH > 2 BSS64 AM* , Top view MAM255 Note Fig.1 Simplified outline (SOT23) and symbol. 1. *=p: Made in Hong Kong. * = t: Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vcopo collector-base voltage open emitter - 120 Vv VcEo collector-emitter voltage open base - 80 V VeBo emitter-base

BSS64LT1 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 120 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 6 SOT-23 (TO-236AB) COLLECTOR 3 1 BASE DEVICE MARKING 2 EMITTER BSS64LT1 = AM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 80 -- 120 -- 5.0 -- -- -- 0.1 500 -- 200 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 4.0 mAdc) V(BR)CEO Collector-Base Breakdown Voltage (IC = 100 Adc) V(BR)CBO Emitter-Base Brea

A 2SC3839K ZMV834A BCW60FF ZMV835A BCX70G BCX70G BCX70G BCX70G BCX52-10 BCX70H BCX70H BCX70H BCX70H BCP53 BCX53 ZMV930 BCX70J BCX70J BCX70J BCX70J ZMV931 BCX70K ZMV932 BCX70K BCX70K BCX70K BCX53-10 BCX53-16 MMBTA55L ZMV933 BFP405 MMBT3904W BCX52-16 BFP420 BSS64 BSS64 BSS64 BSS64 Max Max Max Max Max Max Max Max Max Max Max Max Sie Phi Phi Zet Sie Phi Ph Roh Sie Zet Roh Zet Sie Zet Phi Sie Phi Phi Sie Phi Sie Phi Phi Mot Sie Zet Phi Sie Phi Phi Zet Phi Zet Sie Phi Phi Sie Sie Mot Zet Sie Mot Sie Sie Mot Sie Phi Phi ZB ZB ZB ZB ZB ZB ZB ZB ZB ZB ZB ZB P P N I N N N N P I N I N I N N N N P N N N N P P I N N N N I N I N N N P P N I MQ N P MQ N N N N SC70 SC70 SC70 SC70 SC70 SC70 SC70 SC70 SC70 SC70 SC70 SC70 SOT89 SOT89 SOT23 SOD323 SOT23 SOT23 SOT23 SOT89 SOD323 SOD323 SOT23 SOD323 SOT23 SOT23 SOT23 SOT23 SOT89 SOT23 SOT23 SOT23 SOT23 SOT223 SOT89 SOD323 SOT23 SOT23 SOT23 SOT23 SOD323 SOT23 SOD323 SOT23 SOT23 SOT23 SOT89 SOT89 SOT23 SOD323 SOT343 SOT323 SOT89 SO

BSS64 NPN high voltage transistor Product data sheet Supersedes data of 2004 Jan 16 2004 Mar 12 NXP Semiconductors Product data sheet NPN high voltage transistor BSS64 FEATURES PINNING * Low current (max. 100 mA) PIN * High voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector * High-voltage general purpose and switching applications * Intended for thick and thin-film circuit applications. handbook, halfpage DESCRIPTION 3 3 NPN transistor in a SOT23 plastic package. PNP complement: BSS63. 1 MARKING 1 MARKING CODE(1) TYPE NUMBER BSS64 Top view 60* or AM 2 2 MAM255 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BSS64 - DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO col

BSS64LT1 Driver Transistor NPN Silicon Features * Pb-Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO 80 Vdc Collector -Base Voltage VCBO 120 Vdc Emitter -Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit 225 1.8 mW mW/C 556 C/W Collector Current - Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 3 PD RqJA 1 2 SOT-23 (TO-236) CASE 318 STYLE 6 PD 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits a

hfe 100 AL MMBTA55L Mot N SOT23 pnp 25V (MPSA55) AL ZMV933 Zet I SOD323 12-42pF hyperabrupt varicap ALs BFP405 Sie MQ SOT343 AM MMBT3904W Mot N SOT323 2N3904 AM BCX52-16 Sie P SOT89 pnp 60V BCX52 hfe 160 AMs BFP420 Sie MQ SOT343 npn fT 25GHz 4.5V 35mA AM BSS64 Mot N SOT23 npn 80V 0.1A fT 60MHz AMs BSS64 Sie N SOT23 npn 80V 0.1A fT 60MHz AMp BSS64 Phi N SOT23 npn 80V 0.1A fT 60MHz AMt BSS64 Phi N SOT23 npn 80V 0.1A fT 60MHz AM ZMV933A Zet I SOD323 12-42pF hyperabrupt varicap AN BCW60FN Sie N SOT23 gp npn 35V 0.2A ANs BFP450 Sie MQ SOT343 npn fT 25GHz 4.5V 100mA AN ZMV934 Zet I SOD323 25-95pF hyperabrupt varicap AN 2SC5659 Roh N VMT3 npn HF 25V 50mA 300MHz AN 2SC4618 Roh N EMT3 npn HF 25V 50mA 300MHz AN 2SC4098 Roh N UMT3 npn HF 25V 50mA 300MHz AN 2SC2413K Roh N SMT3 npn HF 25V 50mA 300MHz AO BCW60AR ITT R SOT23R BCY58-vii AO ZMV934A Zet I SOD323 25-95pF hyperabrupt varicap AP BCW60BR ITT R SOT23R BCY58-viii AP CMDZ2L4 CSC I SOD323 zener 250mW Iz 0.5mA 2.4V A

BSS64 NPN high voltage transistor Product data sheet Supersedes data of 2004 Jan 16 2004 Mar 12 NXP Semiconductors Product data sheet NPN high voltage transistor BSS64 FEATURES PINNING * Low current (max. 100 mA) PIN * High voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector * High-voltage general purpose and switching applications * Intended for thick and thin-film circuit applications. handbook, halfpage DESCRIPTION 3 3 NPN transistor in a SOT23 plastic package. PNP complement: BSS63. 1 MARKING 1 MARKING CODE(1) TYPE NUMBER BSS64 Top view 60* or AM 2 2 MAM255 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BSS64 - DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO col

BSS64LT1G Driver Transistor NPN Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO 80 Vdc Collector -Base Voltage VCBO 120 Vdc Emitter -Base Voltage VEBO 5.0 Vdc IC 100 mAdc Collector Current - Continuous 1 BASE 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol Max 1 Unit 2 PD 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C RqJA SOT-23 (TO-236) CASE 318 STYLE 6 PD Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be

BSS64 NPN high-voltage transistor Product specification Supersedes data of 1997 Sep 04 1999 Apr 15 Philips Semiconductors Product specification NPN high-voltage transistor BSS64 FEATURES PINNING * Low current (max. 100 mA) PIN * High voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector * High-voltage general purpose and switching applications * Intended for application in thick and thin-film circuits. DESCRIPTION handbook, halfpage 3 NPN transistor in a SOT23 plastic package. PNP complement: BSS63. 3 1 MARKING MARKING CODE(1) TYPE NUMBER BSS64 1 AM Top view Note Fig.1 1. = p : Made in Hong Kong. = t : Made in Malaysia. 2 2 MAM255 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 120 V VCEO collector-emitter voltage open base - 80 V VEBO emitter-base voltage open collector - 5 V IC collector curre

data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BSS64 NPN high voltage transistor Product data sheet Supersedes data of 2004 Jan 16 2004 Mar 12 NXP Semiconductors Product data sheet NPN high voltage transistor BSS64 FEATURES PINNING * Low current (max. 100 mA) PIN * High voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector * High-voltage general purpose and switching applications * Intended for thick and thin-film circuit applications. handbook, halfpage DESCRIPTION 3 3 NPN transistor in a SOT23 plastic package. PNP complement: BSS63. 1 MARKING 1 MARKING CODE(1) TYPE NUMBER BSS64 Top view 60* or AM 2 2 MAM255 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INF

ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. BSS64 BSS64 C E SOT-23 B Mark: U3 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory shoul