rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 -- 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 60 V Per transistor VDS drain-source voltage Tamb = 25 C VGS gate-source voltage Tamb = 25 C ID drain current RDSon drain-source on-state

BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 -- 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 60 V Per transistor VDS drain-source voltage Tamb = 25 C VGS gate-source voltage Tamb = 25 C ID drain current RDSon drain-source on-state resistance - - 20 V Tamb = 25 C; VGS = 10 V [1] - - 320 mA Tj = 25 C; VGS = 10 V; ID = 300 mA [2] - 0.9 1.6 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Pulse test: tp 300 s;

BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 -- 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 60 V Per transistor VDS drain-source voltage Tamb = 25 C VGS gate-source voltage Tamb = 25 C ID drain current RDSon drain-source on-state resistance - - 20 V Tamb = 25 C; VGS = 10 V [1] - - 320 mA Tj = 25 C; VGS = 10 V; ID = 300 mA [2] - 0.9 1.6 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Pulse test: tp 300 s;

BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 -- 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 60 V Per transistor VDS drain-source voltage Tamb = 25 C VGS gate-source voltage Tamb = 25 C ID drain current RDSon drain-source on-state resistance - - 20 V Tamb = 25 C; VGS = 10 V [1] - - 320 mA Tj = 25 C; VGS = 10 V; ID = 300 mA [2] - 0.9 1.6 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Pulse test: tp 300 s;

BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 -- 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 60 V Per transistor VDS drain-source voltage Tamb = 25 C VGS gate-source voltage Tamb = 25 C ID drain current RDSon drain-source on-state resistance - - 20 V Tamb = 25 C; VGS = 10 V [1] - - 320 mA Tj = 25 C; VGS = 10 V; ID = 300 mA [2] - 0.9 1.6 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Pulse test: tp 300 s;

2 2N7002F 60 2000 0.475 0.69 2N7002E 60 3000 0.385 0.69 NX7002AK 60 4500 0.19 0.33 2N7002 60 5000 0.3 PMBF170 60 5000 0.3 NXS7002AK 60 5000 0.19 0.33 PMGD780SN 60 920 0.49 1.05 BSS138BKS 60 1600 0.32 0.6 2N7002BKS 60 1600 0.3 0.5 2N7002PS 60 1600 0.32 0.6 BSS138PS 60 1600 0.32 0.72 NX7002AKS 60 4500 0.17 0.33 Type number SOT666 TO-220AB (SOT78) TO-236AB (SOT23) TSSOP6 (SOT363) 130 Types in bold green represent products in development For the most up to date product information, please visit www.nxp.com/mosfets 29 75 V - 80 V N-channel MOSFETs Package name D2PAK (SOT404) TO-220AB (SOT78) I2PAK (SOT226) Power-SO8 (LFFPAK56) TO-220AB (SOT78) 30 Type number VDS [max] [V] RDSon [max] @ 10 V [m] ID [max] [A] QG(tot) [typ] (nC) PSMN005-75B 75 5 75 165 PSMN008-75B 75 8.5 75 122.8 PHB110NQ08T 75 9 75 113.1 PHB29N08T 75 27 19 PSMN2R8-80BS 80 3 120 139 PSMN3R3-80BS 80 3.5 120 111 PSMN4R4-80BS 80 4.5 100 125 PSMN5R0-80BS 80 5.1 100 101 PSMN6R5-80BS 80 6.9 100 71 PSMN8R7-80BS 80 8.7 90 52 PSMN012-80BS 80 11 7

0 0.36 0.6 BSS138BK 60 1600 0.36 0.6 BSS138P 60 1600 0.36 0.72 2N7002F 60 2000 0.475 0.69 2N7002E 60 3000 0.385 0.69 2N7002K 60 3900 0.34 2N7002 60 5000 0.3 PMBF170 60 5000 0.3 PMGD780SN 60 920 0.49 1.05 2N7002BKS 60 1600 0.3 0.5 2N7002PS 60 1600 0.32 0.6 BSS138PS 60 1600 0.32 0.72 For the most up to date product information, please visit www.nxp.com/mosfets 13 75 V - 80 V N-channel MOSFETs Package D2PAK (SOT404) 10.0 x 15.0 x 4.5 DFN3333-8 (SOT873-1) 3.3 x 3.3 x 1.0 I2PAK (SOT226) 10.0 x 14.0 x 4.5 Power-SO8 (LFPAK) 5.0 x 6.0 x 1.1 TO-220AB (SOT78) 15.5 x 10.0 x 4.3 RDSon [max] @ VGS = 10 V (m) ID [max] (A) Typenumber VDS [max] (V) PSMN005-75B 75 5 75 165 PSMN008-75B 75 8.5 75 122.8 PHB110NQ08T 75 9 75 113.1 PHB29N08T 75 PSMN2R8-80BS 80 3 QG(tot) [typ] (nC) 27 19 120 139 PSMN3R3-80BS 80 3.5 120 111 PSMN4R4-80BS 80 4.3 120 111 PSMN5R0-80BS 80 4.7 100 87 PSMN6R5-80BS 80 6.9 100 71 PSMN8R7-80BS 80 8.7 90 52 PSMN012-80BS 80 11 74 36 PSMN017-80BS 80 17 50 26 PSMN050-80BS 80 46 22 9 PSMN023-80LS 80 23

n the Spotlight Package PMGD280UN Housed in a small SMD plastic package SOT23 Very fast switching TrenchMOS technology AEC-Q101 qualified 1.8 V RDSon rated for Low Voltage Gate Drive 0.49 1 - 6 7.2 1.05 - 780 1100 - - 0.36 0.9 1.5 5 13 0.72 - 900 1000 - - BSS138PS 0.3 1 2.5 7 15 0.6 - 1000 1300 - - 2N7002PS 2N7002PV 0.3 1 2.5 11 19 0.5 2 1000 1300 - - 2N7002BKS 2N7002BKV Small-signal MOSFETs single (P-channel) types in bold represent new products TSOP6 SOT457 (SC-74) SOT23 SOT363 (SC-88) SOT323 (SC-70) SOT416 (SC-75) SOT883 (SC-101) 4.5 x 2.5 x 1.5 2.9 x 1.5 x 1.0 2.9 x 1.3 x 1.0 2.0 x 1.25 x 0.95 2.0 x 1.25 x 0.95 1.6 x 0.8 x 0.77 1.0 x 0.6 x 0.5 1300 600 250 300 200 150 250 BSS84AKT* BSS84AKM* SOT223 (SC-73) SOT89 (SC-62) 6.5 x 3.5 x 1.65 1700 MOSFETs SOT363 (SC-88) Package M3D109 Size (mm) P tot(mW) VDS (V) VGS (V) 12 8 8 20 12 8 30 50 20 20 ID (A) VGS(th) min (V) VGS(th) max (V) ESD ton typ (ns) toff typ (ns) QG typ (nC) protection (kV) RDSon typ (m) @ Vgs = 10 V 4.5 V 2.5 V 1.8 V 1.52 0.4 -

n the Spotlight Package PMGD280UN Housed in a small SMD plastic package SOT23 Very fast switching TrenchMOS technology AEC-Q101 qualified 1.8 V RDSon rated for Low Voltage Gate Drive 0.49 1 - 6 7.2 1.05 - 780 1100 - - 0.36 0.9 1.5 5 13 0.72 - 900 1000 - - BSS138PS 0.3 1 2.5 7 15 0.6 - 1000 1300 - - 2N7002PS 2N7002PV 0.3 1 2.5 11 19 0.5 2 1000 1300 - - 2N7002BKS 2N7002BKV Small-signal MOSFETs single (P-channel) types in bold represent new products TSOP6 SOT457 (SC-74) SOT23 SOT363 (SC-88) SOT323 (SC-70) SOT416 (SC-75) SOT883 (SC-101) 4.5 x 2.5 x 1.5 2.9 x 1.5 x 1.0 2.9 x 1.3 x 1.0 2.0 x 1.25 x 0.95 2.0 x 1.25 x 0.95 1.6 x 0.8 x 0.77 1.0 x 0.6 x 0.5 1300 600 250 300 200 150 250 BSS84AKT * BSS84AKM * SOT223 (SC-73) SOT89 (SC-62) 6.5 x 3.5 x 1.65 1700 MOSFETs SOT363 (SC-88) Package M3D109 Size (mm) P tot (mW) VDS (V) VGS (V) 12 8 8 20 12 8 30 50 20 20 ID (A) VGS(th) min (V) VGS(th) max (V) ESD ton typ (ns) toff typ (ns) QG typ (nC) protection (kV) RDSon typ (m) @ Vgs = 10 V 4.5 V 2.5 V 1.8 V 1.52 0.4

0 30 30 30 30 30 60 60 60 60 60 20 30 60 60 20 20 20 20 20 20 30 30 RDSon max @ VGS = 10 V (m) channel type PMDPB28UN PMDPB42UN PMDPB38UNE* PMDPB30XN* PMDPB56XN PMDPB95XNE* PMDPB70EN PMGD130UN PMGD290XN PMGD400UN NX3008NBKS PMGD175XN PMGD370XN NX3020NAKS* BSS138PS BSS138BKS 2N7002BKS 2N7002PS NX7002AKS PMDT290UNE NX3008NBKV 2N7002BKV 2N7002PV PMDPB58UPE PMDPB65UP PMDPB85UPE PMDPB55XP PMDPB70XPE PMDPB80XP PMDPB70XP PMC85XP Type number Package name Dual MOSFETs 3.1 2 2.9 14.4 1.9 265 185 268 660 170 3 0.88 0.72 0.89 0.52 0.7 0.65 0.33 0.72 0.6 0.5 0.6 0.33 0.45 0.52 0.5 0.6 6.3 4.5 5.4 16.5 5 5.7 5.2 5.2 130 83 34 43 34 75 37 11 38 42 33 30 11 55 34 33 30 804 380 514 785 600 550 680 680 N N N N N N N N N N Y N N N Y Y Y Y N Y Y Y Y N N N N N N N N 0.55 31 Y 0.26 24 Y 0.76 58 Y 0.55 31 Y 0.26 24 Y * in development, release Q3/2012 RDSon max @ VGS = 10 V (m) RDSon max @ VGS = 5 V (m) 20 20 8 8 8 8 2 1 2 2 2 2 0.33 0.17 0.4 0.22 0.8 0.55 1.1 1.1 0.6 0.6 0.5 0.5 2.1 2.1 1.1 1.1 0.95 1.3 1600 7500 2000