SM BC477CSM BC477XCSM BC477YCSM BC478CSM BC479CSM BC847BCSM BCW29CSM BCW30CSM BCW31CSM BCW32CSM BCW33CSM BCW34XCSM BCX17CSM BCY58ACSM BCY58BCSM BCY58CCSM BCY58CSM BCY59ACSM BCY59BCSM BCY59CCSM BCY59CSM BCY70CSM BCY71CSM BCY72CSM BCY78CSM BF257CSM BF258CSM BF259CSM BFT30CSM BFT57CSM BFT58CSM BFT59CSM BFW44CSM PNP PNP NPN NPN NPN NPN NPN NPN NPN PNP PNP NPN PNP PNP PNP PNP PNP NPN PNP PNP PNP PNP NPN NPN PNP NPN NPN NPN NPN NPN NPN NPN NPN PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN NPN PNP LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 20V 25V 25V 15V 15V 45V 45V 20V 20V 45V 50V 160V 80V 80V 80V 40V 40V 45V 32V 32V 32V 32V 20V 45V 45V 32V 32V 32V 32V 45V 45V 45V 45V 40V 45V 25V 32V 160V 250V 300V 60V 160V 200V 300V 150V 0.05A 0.1A 0.1A 0.003A 0.003A 0.03A 0.1A 0.1A 0.1A 0.1A 0.2A 0.1A 0.1A 0.1A 0.1A 0.1A 0.1A 0.1A 0.1A 0.1A 0.

; X10 L19 30V |; 20V | 5V 100MA 150C | 625MWF 100M | 1R7 65MN 1MA| FRM |MOU : 2 BF257 NS } T039 Lo4 160V |160V | 5V 100MA 176C SOOMWF 55M] 7P 25MN 3OMA| TVM SES | BF257 0 . BF257A NS | T1039 LO4 18GV /180V | 5V 1OOMA 175C 500MWF 55M, 7P 25MN 3OMA|RLA|TIB} BF259 | 2N3440 2 BF257B NS | TO39 Lo4 220V 4220V | 5V 100MA 175C 5OOMWE 55M; 7P 25MN SOMA} RLA|TIB] BF259 | 2N3440 2 BF257C NS | TO33 Lo4 220V j220V | 5V 100MA 175C | SOOMWE 55M] 7P 25MN 30MA]RLA |TIB) BF259 2N3440 2 BF257D NS | TO39 | LO4 160V {160V |} 5V 100MA 175C ; SOOMWF 55M | 7P |30/150 3OMA}RLA|TIB{ BF259 } 2N3440 2 BF257G NS |] TO39 | LO4 170V | 176V 5V 100MA 175C | SOOMWF 55M] 7P 25MN 30OMA} RLAITIB| BF259 | 2N3440 2 BF257N NS | TO39 Lo4 180V |180V 5V 100MA 175C | SOOMWF 55M | 7P 25MN 3OMA)RLA|TIB| BF259 | 2N3440 2 BF257S NS {| TO39 Lo4 140v /140V j 5V 100MA 175C | SOOMWF 55M] 7P Z5MN 30MA) RLA|TIB8| BF259 | 2N3440 2 BF258 NS | TO039 Lo4 250V /250V | 5V 100MA

{0,03 | 1-4,6 BC177B ,KT209M; -U,,220 V pez 41 Sp | Kt34078 25 | 25 4o | 4,5 | 0,3 |0,05 | 1-4,6 BC177B ,XT209M; -U,9=20 V BCZ 12 Sp KT209M 60 | 60 45 4 |0,3 | 0,05 3 9456 KT31078 ; | ~U,5230 vi BD1098 sn | BD3S4B 60 |40 {80} so {48 |3 5 | 38 BD 115 sa | BF259 220|480 |60 | 145 |0,9 [0,15 |4.2 | 4.5,6|SF259 5Originaltyp| Zonenfolgef Ersatztyp| U | U B . I Abweichungen Benerkungen,weitere Bauform Material CBO CEO. (MHz) | (Ww) CA) | gegeniiber Ersatztypen (v)}q ) Originaltyp CER (Vv) 4 {2 3 4 5 6 |> < BD 119 Sn SF359 300 | 300 p40 70 | (10) | 0,4 |4 5,6 |BF259 veraltet 3 BD 124 sn | BDY13=40 70 [45 75 | 120] 15 | 2 | 1-3,5,6/4 |BD3545 28 BD 130 Sn KD503 400 | 60 45 441| 400 | 15 | 2,4+6 2N3055 3 BD 134 Sn KT817W _70 145 150 80 | 15 | 3 4,2,5 |4! |BD354B,BD237 27 BD 135 Sn BD139 45 145 -|100]. 250] 8 4 1,2 KT8176,W;kp1. zu BD136 27 BD 136 | Sp BD140 45 |45 [400] 250] 8 4 4,2 KT816G,Wikpl. zu BD135 2? BD 137 Sn BD139 60. }60 |100] 250] 8 4 41,2 KT8419G,Wekpl. zu BD138 27 BD 138 Sp BD14

ot max. @ Ic @ VCE @ 25C (SAT) max. mA/A V/mV mA/A mW / W PackageMftr. IC A/mA min 1V 1V 0.5V 0.5V 0.5V 0.5V 0.5V 500mW 500mW 625mW 625mW 625mW 625mW 625mW TO-39 TO-39 TO-92 TO-92 TO-92 TO-92 TO-92 Mftrs.List No. NPN PNP BF422 BF423ZL1G BF423 BF423ZL1G ST BF259 BF259 MC BF259 BF259 ON MPSA42RLRPG MPSA42RLRPG ON MPSA92RLRPG MPSA92RLRPG FCH MPSA42 MPSA42 MC MPSA42 MPSA42 MC MPSA92 MPSA92 50mA 625mW TO-92 ON 50mA 625mW TO-92 FCH 0.5A 1W TO-92 ST 50mA 625mW TO-92 MC MPSA44G KSP44 STBV42 MPSA44 MPSA44G KSP44 STBV42 MPSA44 452219 NPN 2N3705 2N3904 2SC1815-Y BC182 MAG FCH TOSH FCH 120-8606 984-6743 121-3347 984-6760 BC182B BC182L FCH FCH 101-7649 101-7650 BC182LB BC183 BC183C BC183LC BC184C BC184L BC237BG FCH FCH FCH FCH FCH FCH ON 101-7651 101-7653 101-7655 101-7656 101-7657 101-7658 955-6389 BC238 BC557B MAG FCH 120-8595 101-7678 BC640 PMBT2222A PMBT3904 FCH NXP NXP STX117-AP BC337 BC33716 BC337-25ZL1G BC337-40ZL1G BC546 BC546BZL1G BC547B BC33716 BC547BZL1G BC547

BF259 HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for videooutput stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Parameter Unit BF 257 BF258 BF25 9 V CBO Collector-base Voltage (I E = 0) 160 250 300 V V CEO Collector-emitter Voltage (I B = 0) 160 250 300 V V E BO Emitter-base Voltage (I C = 0) IC 5 V Collector Current 100 mA 200 mA 5 W I CM Collector Peak Current Pt o t Total Power Dissipation at T amb 50 C T stg Storage Temperature - 55 to 200 C Tj Junction Temperature 200 C October 1988 1/5 BF257-BF258-BF259 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max C/W C/W 30 175 ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified) Symbol I CB

3 BC107 V. BFP177 BC108 V BFP178 BC109 V BFPI79 * BC147 * BF180 * BC148 * BF181 * BC149 * BF182 * BC157 * BFI83 * BC158 * BFI94 * BC159 * BF1O5 ~ * BFIO6 BSXP59 * BF197 BSXP60 * BF200 BSXP61 BSXP65 BF214 BSXP66 BF215 BSXP67 * BF257 BSXP87 * BF258 BSXP92 * BF259 BSXP93 BSXP94 BFP519 BSYP62 BFP520 BSYP63 BFP521 BUYP52 BFP619 oO BUYP53 BFP620 BUYP54 BFP621 TG2 BFP719 TG3A . 0 BFP720 TG3F 0 BFP721 o TG4 BFP722 TGS TG8 BFWP21 TG5O * BFYP99 TG51 BSWP30 o TG52. o TG53 Oo TG55 PODZIAL OGOLNY TRANZYSTOROW WEDEUG ZASTOSOWAN Zastosowanie do wzmacniaczy matej czestotliwogei ' TG5, TG8, TG50, TG51, Typy tranzystorw BC107, BC108, BC147, BC148, BC157, BC158, BC177, BC178, BC237, BC238, BC527, BC528, BCP627, BCP628 TG2, TG3A, TG3F, TG4, TG52, TG53, TG55 do wzmacniaczy matej czestotliwogci_ o * niskim poziomie szumw BC109, BC149, BC159, BC179 do stopni mocy wzmac- niaczy matej czestotli- wosci BC211, BC313, BD254, BD255, BUYP52, BUYPS53, BUYP54Zastosowanie Typy tranzystorw Zastosowanie Typy tranzystor6w do stopni

BF259 High Voltage Power Transistors Application: * Devices with breakdown voltages of 160V minimum. * NPN Silicon High Voltage Power Transistors. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42 48 Dimensions : Millimetres Pin Configuration 1. Emitter 2. Base 3. Collector Page 1 31/05/05 V1.0 BF259 High Voltage Power Transistors Absolute Maximum Ratings Parameter Symbol BF259 Collector Base Voltage VCBO Collector Emitter Voltage VCEO Emitter Base Voltage VEBO 5 IC 100 ICM 300 Units 300 Collector Current-Continuous V mA Collector Current-Peak Power Dissipation at Ta = 25C Derate above 25C 1 5.71 PD Power Dissipation at TC = 25C Derate above 25C Operating and Storage Junction Temperature Range W mW/C 5 28.57 Tj, Tstg -65 to +200 Junction to Ambient in Free Air Rth(j-a) 175 Junction to Case Rth(j-c) 35 C Thermal Characteristics C/W Electrical Characteri

BF259/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol PBF259,S Unit Collector - Emitter Voltage VCEO 300 Vdc Collector - Base Voltage VCBO 300 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 Watts mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg - 55 to +150 C Symbol Max Unit Operating and Storage Junction Temperature Range 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector - Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 300 -- Vdc Collector - Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 300 -- Vdc Emitter - Base Breakdown Voltage (IE = 100 mAdc,

BF259 TO-39 Metal Can Package INTENDED FOR VIDEO OUTPUT STAGES IN BLACK AND WHITE AND IN COLOUR TELEVISION REVEIVERS. ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise) DESCRIPTION SYMBOL VCEO Collector Emitter Voltage VCBO Collector Base Voltage Emitter Base Voltage Collector Current Continuous Peak Total Power Dissipation @ Ta=25C Derate Above 25C Total Power Dissipation@ Tc=25C Derate Above 25C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Ambient Junction to Case BF258 250 BF259 300 UNITS V 160 250 300 V VEBO <----------------5----------------> V IC <-------------100---------------> mA ICM <------------300----------------> mA PD Tj, Tstg <------------1.0---------------> <---------------6.67-------------> <----------------7----------------> <---------------46.67-----------> <---------- -65 to +175------> W mW/C W mW/C C Rth(j-a) <----------------150--------------> C/W Rth(j-c) <----------------21.43-----------> C/W PD ELECTRICAL CHARACTE

BF259 TO-39 Metal Can Package INTENDED FOR VIDEO OUTPUT STAGES IN BLACK AND WHITE AND IN COLOUR TELEVISION REVEIVERS. ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise) DESCRIPTION SYMBOL VCEO Collector Emitter Voltage VCBO Collector Base Voltage Emitter Base Voltage Collector Current Continuous Peak Total Power Dissipation @ Ta=25C Derate Above 25C Total Power Dissipation@ Tc=25C Derate Above 25C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Ambient Junction to Case BF258 250 BF259 300 UNITS V 160 250 300 V VEBO <----------------5----------------> V IC <-------------100---------------> mA ICM <------------300----------------> mA PD Tj, Tstg <------------1.0---------------> <---------------6.67-------------> <----------------7----------------> <---------------46.67-----------> <---------- -65 to +175------> W mW/C W mW/C C Rth(j-a) <----------------150--------------> C/W Rth(j-c) <----------------21.43-----------> C/W PD ELECTRICAL CHARACTE

BDY25 BpY25 | BDY23 BDY23 BDY23 | epy23 BO169 BD169 ; BD169 ' BD169 BO169 , BO169 , 8D169 BD169 eswee : | BSWe66 BSW66 | BSwee | BEYSO BFYSO | BFvso | BFY5O | BEI79C | BEI79C | aswsa | 8Sws4 | BFY5O | BFYSO BFY50 | BFYSO | BFY50 ; BFY50 | aevso | BFYSO. | BF259 | ae2s9 ' BF259 | BF259 BF259 BF259 | BF179C | peter | BF179C | BFI79C | BDY79 BCW36 | BC4878 : BCW36 BCW36 BCW36 2N1893 2N1893 2N1893 2N1893 2N1893 2N1893 2N1893 2N1893 2N3444 2N3441 2N3441 2N3441 2N3054 2N3054 2N3054 2N3054 2N3054 2N3054 2N3054 2N3054 2N3445 2N3445 2N3445 2N3445 2N4923 2N4923 2N4923 2N4923 2N4923 2N4923 2N4923 2N4923 2N1893 2N1893 2N1893 2N1893 2N2297 2N2297 2N2297 2N2297 2N2219A4 2N22194 2N2297 2N2297 2N2297 2N2297 2N2297 2N2297 2N2297 2N2297 2N3738 2N3704 2N5818 2N3704 2N3704 2N3704

BF259 NPN SILICON ANNULAR TRANSISTORS NPN SILICON 6-130 AMPLIFIER TRANSISTORS , .. designed for high-voltage DC - VHF video amplifier applications. @ High Collector-Emitter Breakdown Voltage BVcEO = 300 (Min) @ Ic = 30 mMAde BF259 @ Low Collector Cutoff Current ICBO = 50 nAdc (Max) @ Vcp = 250 Vde BF259 e@ DC Current Gain hee = 25 (Min) @ Ic = 30 mAdc AXIMUM RATINGS Rating Symbot | BF257 | BF258 | BF259 | Unit Collector-E mitter Voltage: VCEO 160 250 300 Vde Collector-E mitter Voltage VcER 160 250 300 Vde ast 9. Collector-Base Voltage Ves 160 250 300 vde - Lis >| Emitter-Base Voltage Ves 5.0 Vde . 4 Collector Current Continuous lo 100 mAdc | an Total Device Dissipation @ Tc = 25C Pp 50 ~+- Watts Operating Junction Temperature Range | Ty +175 2% HERMAL CHARACTERISTICS a0 Rating Symbol Max Unit [ [ Thermat Resistance, Junction to Case RTHJcase 30 ciw Pin 1. Emitter 2. Base 3. Collector ul 2.54 TP. Weight = 1.15 gram CASE 31 (1) TO-5 All Dimensions in Millimete

BF259 Rating Symbol | BF} BF} BF Unit 257/258|259 Collector-Emitter Voltage Veco _|160|260|300] Vdc CASE 79-04, STYLE 1 Collector-Emitter Voltage Veer _|160|260|300] Vdc TO-39 (TO-205AD) Collector-Base Voltage Vcspo |160/250]/300 Vde Emitter-Base Voltage VEBO 5.0 Vde 3 Collector Collector Current Continuous Ic 0.1 Adc Total Device Dissipation @Ta = 25C Pp 0.8 Watt 2 Derate above 25C 4.57 mWw/C Base Total Device Dissipation @Tc = 26C Pp 5.0 Watt 3 of; Derate above 25C 28.6 mW/C 1 Emitter Operating and Storage Junction Ty, Tstg |65 to +200 c Temperature Range HIGH VOLTAGE THERMAL CHARACTERISTICS . TRANSISTORS Characteristic Symbol Max Unit NPN SILICON Thermal Resistance, Junction to Case RaJc 35 C/W ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) [ Characteristic | Symbol [| Min [ Typ | Max | Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO Vde (Ic = 30 mAds, Ig = 0) BF257 160 _ _ BF258 250 _ _ BF259 300 _ Collector-Base Breakdown Voltage V(BR}CBO V

0MA 135C | 31OMWF 100M : 800MN iOMA| ALN|MOB| 8C349C | 2N3904 0 MPSA20 NS | 7092 Li4 40v | 40V | 4V 1OOMA 135C | 31OMWF 125M | 4P | 40/400 5MA| ALGIMOB| BC347A] 2N3903 6 MPSA42 NS | TO32 L14 300V | 300V 8v 500MA 150C | 625MWF 50M | 3P 40MN 30MA| ALE|MOU | BF259 1 MPSA43 NS | TO92 ul4 200V |200 | 6V 500MA 150C | 625MWF 50M} 4P | 50/200 30MA| ALE}MOU| BF258 L MPSA55 Ps | TO92 ui4 5OV ] 6OV | 4V 5OOMA 135C | 625MWF 50M) 12P 5OMN LOMA! AMGIMOB| BFX29 | 2N2905A} 9 MPSA56 Ps | TO92 L14 gov | 80V | 4V 500MA 135C | 625MWF 50M | 12P 5CMN 10MA| AMG|MOB] BFX29 | 2N2905A/ 9 MPSA62 PS | TO92 Li4 20V 500MA 15GC j 300MWF 125M 20KMN LOMA] AMD | MOU : : 2 MPSA63 ps | TCO92 L14 30V 500MA 150C | 3OOMWF 125M 20KMN 1LOOMA} AMD} MOU 2 MPSA64 Ps j TO92 L14 30V SQOMA 150C | 3O00OMWF 125M 20KMN 100MA} ALD | MOU 2 MPSA65 Ps | TO92 114 30v | 30V } eV 300MA 135C | 625MWF 100M 5P SOKMN 1OMA) ALNi MOB 0 MPSA66 Ps | 1092 L14 30v | 30V | 8Vv | 300MA 135C ) 625MWF 100M{ SP | 75KMN 1OMA| ALN] MOB : : 0 MPSA70 PS To92 L14 40v | 40

BF259RStD DATA High Voltage Wansistors @ NPN Silicon PBF259RS COLLECTOR 1 2 BASE @ 3 EMl~ER M~lMUM RATINGS I Rating I Collector-Emitier I Collector-Base Emitter-Base "oltage I Symbol I Value I Unit I v~~~ I 300 I Vdc Voltage Voltage VCBO 300 VEBO 5.0 Vdc Collector Current -- Continuous Ic 500 @ TA = 25C pD 625 5.0 Total Device Dissipation Derate above 25C @ Tc = 25C PD 1.%ti>*.;f ,:$g~$ .,, TJ, Tstg .~-. .,"'\, > CHARACTERIS$lC$"~~ .,> i, Collector- B~~+kdown (1c = :.$'@~?~E = O) Emi@~-~& Breakdown .J!j$,::,,.:,\:\:,,. .. .$~. I TO-92 (TO-226AA) I ,$ ~:x mti *\*:h*;. ,tww/oc Watts mW/OC `c +150 .t'ir.~.. *,..;,\. , Thermal Resistance, Junction to Casa~ Coiiector-Emitter ~~~kdo$fi (1c = 3.0 mAd~~&f,,~ I ,>+.}: >~ . >::*A ,, . ,,,, r.~,,!~'%i THERMAL CHARACTERISTICS ELECTRICAL * -59.to :\.>,. \~,;~. Vdq:; "~~ "'" &F Total Device Dissipation Derate above 25C Operating and Storage Junction Temperature Range I 83.3 I = 25C unless othemise noted) "ROJC `cm I .,! Voltage (1) Voltage Voltage