rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia BAV99 series High-speed switching diodes Rev. 8 -- 18 November 2010 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration Package configuration NXP JEITA JEDEC BAV99 SOT23 - TO-236AB dual series small BAV99S SOT363 SC-88 - quadruple; 2 series very small BAV99W SOT323 SC-70 - dual series very small 1.2 Features and benefits High switching speed: trr 4 ns Low leakage current Small SMD plastic packages Low capacitance: Cd 1.5 pF Reverse voltage: VR 100 V AEC-Q101 qualified 1.3 Applications High-speed switching General-purpose switching Reverse pol

rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia BAV99 series High-speed switching diodes Rev. 8 -- 18 November 2010 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration Package configuration NXP JEITA JEDEC BAV99 SOT23 - TO-236AB dual series small BAV99S SOT363 SC-88 - quadruple; 2 series very small BAV99W SOT323 SC-70 - dual series very small 1.2 Features and benefits High switching speed: trr 4 ns Low leakage current Small SMD plastic packages Low capacitance: Cd 1.5 pF Reverse voltage: VR 100 V AEC-Q101 qualified 1.3 Applications High-speed switching General-purpose switching Reverse pol

BAV99 series High-speed switching diodes Rev. 8 -- 18 November 2010 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration Package configuration Nexperia JEITA JEDEC BAV99 SOT23 - TO-236AB dual series small BAV99S SOT363 SC-88 - quadruple; 2 series very small BAV99W SOT323 SC-70 - dual series very small 1.2 Features and benefits High switching speed: trr 4 ns Low leakage current Small SMD plastic packages Low capacitance: Cd 1.5 pF Reverse voltage: VR 100 V AEC-Q101 qualified 1.3 Applications High-speed switching General-purpose switching Reverse polarity protection 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit IR reverse current VR = 80 V - - 0.5 A VR reverse voltage - - 100 V trr reverse recovery time - - 4 ns Per diode [1] [1] When switched

BAV99 series High-speed switching diodes Rev. 8 -- 18 November 2010 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration Package configuration NXP JEITA JEDEC BAV99 SOT23 - TO-236AB dual series small BAV99S SOT363 SC-88 - quadruple; 2 series very small BAV99W SOT323 SC-70 - dual series very small 1.2 Features and benefits High switching speed: trr 4 ns Low leakage current Small SMD plastic packages Low capacitance: Cd 1.5 pF Reverse voltage: VR 100 V AEC-Q101 qualified 1.3 Applications High-speed switching General-purpose switching Reverse polarity protection 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit VR = 80 V - - 0.5 A - - 100 V - - 4 ns Per diode IR reverse current VR reverse voltage trr reverse recovery time [1] [1] When switched from

BAV99 series High-speed switching diodes Rev. 07 -- 14 April 2010 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration Package configuration NXP JEITA JEDEC BAV99 SOT23 - TO-236AB dual series small BAV99S SOT363 SC-88 - quadruple; 2 series very small BAV99W SOT323 SC-70 - dual series very small 1.2 Features and benefits High switching speed: trr 4 ns Low leakage current Small SMD plastic packages Low capacitance: Cd 1.5 pF Reverse voltage: VR 100 V AEC-Q101 qualified 1.3 Applications High-speed switching General-purpose switching Reverse polarity protection 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit VR = 80 V - - 0.5 A - - 100 V - - 4 ns Per diode IR reverse current VR reverse voltage trr reverse recovery time [1] [1] When switched from I

BAV99 series High-speed switching diodes Rev. 05 -- 20 August 2008 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration Package configuration NXP JEITA JEDEC BAV99 SOT23 - TO-236AB dual series small BAV99S SOT363 SC-88 - quadruple; 2 series very small BAV99W SOT323 SC-70 - dual series very small 1.2 Features n High switching speed: trr 4 ns n Low leakage current n Small SMD plastic packages n Low capacitance: Cd 1.5 pF n Reverse voltage: VR 100 V 1.3 Applications n High-speed switching n General-purpose switching n Reverse polarity protection 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions IR reverse current VR = 80 V VR reverse voltage Min Typ Max Unit Per diode trr [1] reverse recovery time [1] - - 0.5 A - - 100 V - - 4 ns When switched from IF = 10 mA to IR

BAV99 series High-speed switching diodes Rev. 8 -- 18 November 2010 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration Package configuration NXP JEITA JEDEC BAV99 SOT23 - TO-236AB dual series small BAV99S SOT363 SC-88 - quadruple; 2 series very small BAV99W SOT323 SC-70 - dual series very small 1.2 Features and benefits High switching speed: trr 4 ns Low leakage current Small SMD plastic packages Low capacitance: Cd 1.5 pF Reverse voltage: VR 100 V AEC-Q101 qualified 1.3 Applications High-speed switching General-purpose switching Reverse polarity protection 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit VR = 80 V - - 0.5 A - - 100 V - - 4 ns Per diode IR reverse current VR reverse voltage trr reverse recovery time [1] [1] When switched from

NC) C2234 47N(NC) PR2- PR2- 7 R2229 47R(NC) C2235 47N(NC) Y2- Y2- 7 R2230 47R(NC) C2236 47N(NC) PB2- PB2- 7 R2202 47R C2202 47N PR1+ PR1+ 7 R2203 47R C2203 47N Y1+ Y1+ 7 R2204 47R C2204 47N PB1+ PB1+ 7 R2205 470R C2205 1N SOY1 SOY1 7 C2238 B_PB2 0.1uF(NC) BAV99(NC) C C2209 47N PR1- PR1- R2210 47R R2211 47R C2210 47N Y1- Y1- 7 C2211 47N PB1- PB1- 7 C2239 0.1uF(NC) 1 BAV99(NC) +3V3_ESD D2202 PR1 D2203 2 C2215 Y1 0.1uF(NC) 3 C2216 PB1 0.1uF(NC) BAV99(NC) D2201 BAS32L(NC) 2 C2217 3 1 BAV99(NC) 7 D2204 2 3 1 47R 2 3 1 D2205 BAS32L(NC) C2208 10P(NC) R2209 D2208 2 3 1 BAV99(NC) 2 30R Y1 C2227 47R(NC) C2233 10P(NC) B PR1 47R(NC) R2222 2 C2232 10P(NC) 2 30R(NC) 9 7 6 4 3 1 C2231 10P(NC) 1 FB2210 R2227 75R 1%(NC) CN2201 RCA JACK 2*3 R2226 75R 1%(NC) R2225 75R 1%(NC) 8 5 2 B_PB2 R2221 A K 2 30R(NC) 1 1 FB2209 0.1uF(NC) 1 2 2 30R(NC) BAV99(NC) A K 1 FB2208 G_Y2 1 R_PR2 CN2201 B1 CN2202 D1 CN2203 E7 C2201 E3 C2202 B5 C2203 B5 C2204 C5 C2205 C5 C

odes General Purpose Diodes IF (max) 250mA Type D = Dual T = Triple DD=Double dual Q = Quadruple BAL74 BAL99 BAR74 BAS16 BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16-07L4 BAS16S BAS16U BAS16W BAS21 BAS21-03W BAS21U BAS28 BAS28W BAV70 BAV70S BAV70U BAV70W BAV99 BAV99S BAV99U BAV99W BAW101 BAW56 BAW56S BAW56U BAW56W SMBD914/ MMBD914 SMBD7000/ MMBD7000 Maximum Ratings D T T T D D D DD DD D D DD DD D D D DD DD D D Characteristics (TA = 25C) Package Family Pin1) Conf. C03 C32 C02 C02 C01 VR [V] IF [mA] VBR [V] IR [A] VR [V] VF [V] IF [mA] trr [ns] 50 70 50 75 75 80 75 75 80 75 75 75 200 200 200 75 75 70 70 70 70 70 70 70 70 300 70 70 70 70 250 250 250 250 250 200 250 250 200 250 200 250 250 250 250 200 200 200 200 200 200 200 200 200 200 250 200 200 200 200 50 70 50 75 75 85 75 75 85 75 75 75 250 250 250 85 85 70 70 70 70 70 70 70 70 300 70 70 70 70 < 0.10 < 2.50 < 0.10 < 1.00 < 1.00 < 0.10 < 1.00 < 1.00 < 0.10 < 1.00 < 2.50 < 1.00 < 0.10 < 0.10 < 0.10 < 1.00 <

BAV99 series High-speed switching diodes 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration Package configuration NXP JEITA JEDEC BAV99 SOT23 - TO-236AB dual series small BAV99S SOT363 SC-88 - quadruple; 2 series very small BAV99W SOT323 SC-70 - dual series very small 1.2 Features n High switching speed: trr 4 ns n Low leakage current n Small SMD plastic packages n Low capacitance: Cd 1.5 pF n Reverse voltage: VR 100 V 1.3 Applications n High-speed switching n General-purpose switching n Reverse polarity protection 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions IR reverse current VR = 80 V VR reverse voltage Min Typ Max Unit Per diode trr [1] reverse recovery time [1] - - 0.5 A - - 100 V - - 4 ns When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. <

PLATE;2,W4L20T0.15 288100054002 DIODE;BAT54C,SCHOTTKY DIODE,SOT2 D19,D21,D515 342503400004 CONTACT PLATE;W5L45T0.13,7170LI, 288100701002 DIODE;BAV70LT1,70V,225MW,SOT-23 D516,PD10,PD506,PD507 342673100025 CONTACT PLATE;W5L46T0.13 ,2T,806 288100099001 DIODE;BAV99,70V,450MA,SOT-23 D1,D2 342673100024 CONTACT PLATE;W5L62T0.13 ,1/3T,8 288100099001 DIODE;BAV99,70V,450MA,SOT-23 D1 342504300003 CONTACT PLATE;W5L63T0.13,8500 288100056003 DIODE;BAW56,70V,215mA,SOT-23 D508 342673100023 CONTACT PLATE;W5L80T0.13 ,1/5T,4 288100084002 DIODE;BZX84C5V6,5.2~6V,350mA,SOT ZD1,ZD2 342503400002 CONTACT PLATE;W5L9T0.13,7170LI,P 288101004024 DIODE;EC10QS04,RECT,40V,1A,CHIP, D28,PD508 313000150109 CORE;110OHM/100MH,15.0*14.0*23.0 288101004024 DIODE;EC10QS04,RECT,40V,1A,CHIP, PD501 340676300001 COVER ASSY;8060B 288100112003 DIODE;EC11FS2-TE12L,SCHOTTKY,200 D501,PD8 340673100021 COVER ASSY;DDR,8060 288103104001 DIODE;EC31QS04-TE12L,40V,3A,SMT PD1,PD4,PD6,PD7,PD9 340673100002 COVER ASSY;HINGE,8060 288104148001 D

0CA 1SMA20CAT3 1SMA22A SMAJ22A 1SMA22AT3 1SMA22CA 1SMA22CAT3 1SMA24A SMAJ24A 1SMA24AT3 1SMA24CA 1SMA24CAT3 BAV70W SD103AWS N/A BAT43WS N/A N/A B0540WS N/A BAT760 N/A SDM20U30 SDM20U40 N/A N/A SDM20U30 N/A SDM10U45 BAS40DW-05 N/A N/A BAS40TW BAT54S N/A N/A BAV99T N/A BAV70T N/A BAW56T UF1504 UF1505 SB120 SB130 1N4148WS BAV21WS SB150 SB160 BAV20W BAV20W N/A SMAJ10A N/A SMAJ10CA N/A SMAJ10CA N/A N/A SMAJ11A N/A SMAJ11CA N/A SMAJ11CA N/A N/A SMAJ12A N/A SMAJ12CA N/A SMAJ12CA N/A N/A SMAJ13A N/A SMAJ13CA N/A SMAJ13CA N/A N/A SMAJ14A N/A SMAJ14CA N/A SMAJ14CA N/A N/A SMAJ15A N/A SMAJ15CA N/A SMAJ15CA N/A N/A SMAJ16A N/A SMAJ16CA N/A SMAJ16CA N/A N/A SMAJ17A N/A SMAJ17CA N/A SMAJ17CA N/A N/A SMAJ18A N/A SMAJ18CA N/A SMAJ18CA N/A N/A SMAJ20A N/A SMAJ20CA N/A SMAJ20CA N/A N/A SMAJ22A N/A SMAJ22CA N/A SMAJ22CA N/A N/A SMAJ24A N/A SMAJ24CA N/A SMAJ24CA N/A 1SMA26A SMAJ26A 1SMA26AT3 1SMA26CA 1SMA26CAT3 1SMA28A SMAJ28A 1SMA28AT3 1SMA28CA 1SMA28CAT3 1SMA30A SMAJ30A 1SMA30AT3 1SMA30CA 1SMA30CAT3 1SMA33A SMAJ33A

BAV99... Silicon Switching Diode * For high-speed switching applications * Series pair configuration BAV99 BAV99F BAV99T BAV99W BAV99S BAV99U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 1 D 2 2 3 Type Package Configuration Marking BAV99 BAV99F* BAV99S BAV99T BAV99U BAV99W SOT23 TSFP-3 SOT363 SC75 SC74 SOT323 series series dual series series dual series series A7s A7s A7s A7s A7s A7s * Preliminary 1 Mar-10-2004 BAV99... Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol Value Diode reverse voltage VR 80 Peak reverse voltage VRM 85 Forward current IF 200 Non-repetitive peak surge forward current IFSM 4.5 t = 1 ms 1 t = 1 s, single 0.5 t = 1 s, double 0.75 mA mW Ptot BAV99, T S 28C 330 BAV99F, TS tbd 250 BAV99S, TS 85C BAV99T, TS 104C 250 BAV99U, TS 113C 250 <

BAV99... Silicon Switching Diode * For high-speed switching applications * Series pair configuration BAV99 BAV99F BAV99T BAV99W BAV99S BAV99U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 1 D 2 2 3 Type Package Configuration Marking BAV99 BAV99F* BAV99S BAV99T BAV99U BAV99W SOT23 TSFP-3 SOT363 SC75 SC74 SOT323 series series dual series series dual series series A7s A7s A7s A7s A7s A7s * Preliminary 1 Mar-10-2004 BAV99... Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol Value Diode reverse voltage VR 80 Peak reverse voltage VRM 85 Forward current IF 200 Non-repetitive peak surge forward current IFSM 4.5 t = 1 ms 1 t = 1 s, single 0.5 t = 1 s, double 0.75 mA mW Ptot BAV99, T S 28C 330 BAV99F, TS tbd 250 BAV99S, TS 85C BAV99T, TS 104C 250 BAV99U, TS 113C 250 <

BAV99... Silicon Switching Diode * For high-speed switching applications * Series pair configuration * BAV99S / U: For orientation in reel see package information below * Pb-free (RoHS compliant) package1) * Qualified according AEC Q101 BAV99 BAV99W BAV99S BAV99U $ ! " # , ! , , " , , , ! Type Package Configuration Marking BAV99 BAV99S BAV99U BAV99W SOT23 SOT363 SC74 SOT323 series dual series dual series series A7s A7s A7s A7s 1Pb-containing package may be available upon special request 1 2007-09-19 BAV99... Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol Value Diode reverse voltage VR 80 Peak reverse voltage VRM 85 Forward current IF 200 Non-repetitive peak surge forward current IFSM 4.5 t = 1 ms 1 t = 1 s, single 0.5 t = 1 s, double 0.75 BAV99, TS 28C 330 BAV99S, TS 85C 250 BAV99U, TS 113C 250 BAV9