Q25 Q26 Q27 Q3 Q31 Q32 Q33 Q34 Q35 Q36 Q37 Q38 Q39 Q4 Q40 Q41 Q5 loc Q6 Q7 Q8 Q9 R103 R104 R106 R11 R111 R114 R115 R116 R117 R118 R119 R12 R124 R125 R126 R127 R129 R133 R134 R135 R136 R137 R138 R139 R143 R144 R145 R147 R149 PART CODE PART NAME 49590009S0 T2N7002M-B T2SA1037KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2N7002M-B T2SA1037KB T2SC2412KB T2SA1037KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SA1037KB T2SC2412KB T2SC2412KB T2SC2412KB parts_code T2SC2412KB T2SC2412KB T2SA1037KB T2SA1037KB HRFT101JBA HRFT101JBA HRFT332JBA HRFT472JBA HRFT470JBA HRFT101JBA HRFT332JBA HRFT332JBA HRFT000-BA HRFT101JBA HRFT101JBA HRFT472JBA HRFT750JBA HRFT332JBA HRFT101JBA HRFT332JBA HRFT303JBA HRFT103JBA HRFT103JBA HRFT562JBA HRFT512JBA HRFT512JBA HRFT332JBA HRFT272JBA HRFT470JBA HRFT472JBA HRFT331JBA HRFT332JBA HRFT331JBA CONN W

2N7002MTF N-Channel Small Signal MOSFET FEATURES BVDSS = 60 V ! Lower RDS(on) RDS(on) = 5.0 ! Improved Inductive Ruggedness ! Fast Switching Times ID = 200 mA ! Lower Input Capacitance ! Extended Safe Operating Area SOT-23 ! Improved High Temperature Reliability Product Summary 1.Gate 2. Source 3. Drain Part Number BVDSS RDS(on) 2N7002 60V 5.0 ID 115mA Absolute Maximum Ratings Symbol VDSS ID Characteristic Value 60 Drain-to-Source Voltage Continuous Drain Current (TC=25) 115 Continuous Drain Current (TC=100) 73 Units V mA IDM Drain Current-Pulsed 800 mA VGS Gate-to-Source Voltage 20 V Total Power Dissipation (TC=25) 0.2 W Linear Derating Factor 1.6 mW/ - 55 to +150 PD TJ , TSTG Operating Junction and Storage Temperature Range Thermal Resistance Symbol Characteristic Typ. Max. Units RJA Junction-to-Ambient -- 625 /W Rev. C1 N-Channel Small Signal MOSFET 2N7002MTF Electrical Characteristics (TC=25 unless otherwise specified) Symbol Characteristic Min. Typ. Max. Units Test Condition BVD

2N7002MTF Advanced Small Signal MOSFET FEATURES BVDSS = 60 V ! Lower RDS(on) RDS(on) = 5.0 ! Improved Inductive Ruggedness ! Fast Switching Times ID = 200 mA ! Lower Input Capacitance ! Extended Safe Operating Area SOT-23 ! Improved High Temperature Reliability Product Summary 1.Gate 2. Source 3. Drain Part Number BVDSS RDS(on) 2N7002 60V 5.0 ID 115mA Absolute Maximum Ratings Symbol VDSS ID Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25) 115 Continuous Drain Current (TC=100) 73 V mA mA 20 V Total Power Dissipation (TC=25) 0.2 W Linear Derating Factor 0.16 W/ - 55 to +150 Drain Current-Pulsed Gate-to-Source Voltage TJ , TSTG Units 800 IDM VGS PD Value 60 Operating Junction and Storage Temperature Range Thermal Resistance Symbol Characteristic Typ. Max. Units RJA Junction-to-Ambient -- 62.5 /W Rev. A1 N-CHANNEL Small Signal MOSFET 2N7002MTF Electrical Characteristics (TC=25 unless otherwise specified) Symbol Characteristic Min. Typ. Max. Units Test Condition BVD

2N7002MTF N-Channel Small Signal MOSFET FEATURES BVDSS = 60 V ! Lower RDS(on) RDS(on) = 5.0 ! Improved Inductive Ruggedness ! Fast Switching Times ID = 200 mA ! Lower Input Capacitance ! Extended Safe Operating Area SOT-23 ! Improved High Temperature Reliability Product Summary 1.Gate 2. Source 3. Drain Part Number BVDSS RDS(on) 2N7002 60V 5.0 ID 115mA Absolute Maximum Ratings Symbol VDSS ID Characteristic Value 60 Drain-to-Source Voltage Continuous Drain Current (TC=25) 115 Continuous Drain Current (TC=100) 73 Units V mA IDM Drain Current-Pulsed 800 mA VGS Gate-to-Source Voltage 20 V Total Power Dissipation (TC=25) 0.2 W Linear Derating Factor 1.6 mW/ - 55 to +150 PD TJ , TSTG Operating Junction and Storage Temperature Range Thermal Resistance Symbol Characteristic Typ. Max. Units RJA Junction-to-Ambient -- 625 /W Rev. C1 N-Channel Small Signal MOSFET 2N7002MTF Electrical Characteristics (TC=25 unless otherwise specified) Symbol Characteristic Min. Typ. Max. Units Test Condition BVD

2N7002M1PT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.115 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FBPT-723 FEATURE * Small surface mounting type. (FBPT-723) * High density cell design for low RDS(ON). * Suitable for high packing density. 0.50.05 1.20.05 * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. CONSTRUCTION 1.20.05 0.050.04 * N-Channel Enhancement 0.840.05 0.320.05 0.15(REF.) 0.47(REF.) (3) D (3) CIRCUIT (2) 0.280.05 (1) G 0.220.05 Dimensions in millimeters S (2) Absolute Maximum Ratings (1) 0.23(REF.) 0.250.05 FBPT-723 TA = 25C unless otherwise noted 2N7002M1PT Symbol Parameter VDSS Drain-Source Voltage 60 Units V VGSS Gate-Source Voltage 20 V ID Maximum Drain Current - Continuous 115 mA PD Maximum Power Dissipation 150 mW TJ,TSTG Operating Temperature Range TSTG Storage Temperature Range 150 C -55 to 150 C 625 C

Q25 Q26 Q27 Q3 Q31 Q32 Q33 Q34 Q35 Q36 Q37 Q38 Q39 Q4 Q40 Q41 Q5 loc Q6 Q7 Q8 Q9 R103 R104 R106 R11 R111 R114 R115 R116 R117 R118 R119 R12 R124 R125 R126 R127 R129 R133 R134 R135 R136 R137 R138 R139 R143 R144 R145 R147 R149 PART CODE PART NAME 49590009S0 T2N7002M-B T2SA1037KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2N7002M-B T2SA1037KB T2SC2412KB T2SA1037KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SC2412KB T2SA1037KB T2SC2412KB T2SC2412KB T2SC2412KB parts_code T2SC2412KB T2SC2412KB T2SA1037KB T2SA1037KB HRFT101JBA HRFT101JBA HRFT332JBA HRFT472JBA HRFT470JBA HRFT101JBA HRFT332JBA HRFT332JBA HRFT000-BA HRFT101JBA HRFT101JBA HRFT472JBA HRFT750JBA HRFT332JBA HRFT101JBA HRFT332JBA HRFT303JBA HRFT103JBA HRFT103JBA HRFT562JBA HRFT512JBA HRFT512JBA HRFT332JBA HRFT272JBA HRFT470JBA HRFT472JBA HRFT331JBA HRFT332JBA HRFT331JBA CONN W

2N7002MTF Advanced Small Signal MOSFET FEATURES BVDSS = 60 V ! Lower RDS(on) RDS(on) = 5.0 ! Improved Inductive Ruggedness ! Fast Switching Times ID = 200 mA ! Lower Input Capacitance ! Extended Safe Operating Area SOT-23 ! Improved High Temperature Reliability Product Summary 1.Gate 2. Source 3. Drain Part Number BVDSS RDS(on) 2N7002 60V 5.0 ID 115mA Absolute Maximum Ratings Symbol VDSS ID Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25) 115 Continuous Drain Current (TC=100) 73 V mA mA 20 V Total Power Dissipation (TC=25) 0.2 W Linear Derating Factor 0.16 W/ - 55 to +150 Drain Current-Pulsed Gate-to-Source Voltage TJ , TSTG Units 800 IDM VGS PD Value 60 Operating Junction and Storage Temperature Range Thermal Resistance Symbol Characteristic Typ. Max. Units RJA Junction-to-Ambient -- 62.5 /W Rev. B1 N-CHANNEL Small Signal MOSFET 2N7002MTF Electrical Characteristics (TC=25 unless otherwise specified) Symbol Characteristic Min. Typ. Max. Units Test Condition BVD

2N7002MTF Advanced Small Signal MOSFET FEATURES BVDSS = 60 V ! Lower RDS(on) RDS(on) = 5.0 ! Improved Inductive Ruggedness ! Fast Switching Times ID = 200 mA ! Lower Input Capacitance ! Extended Safe Operating Area SOT-23 ! Improved High Temperature Reliability Product Summary 1.Gate 2. Drain 3. Source Part Number BVDSS RDS(on) 2N7002 60V 5.0 ID 115mA Absolute Maximum Ratings Symbol VDSS ID Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25) 115 Continuous Drain Current (TC=100) 73 V mA mA 20 V Total Power Dissipation (TC=25) 0.2 W Linear Derating Factor 0.16 W/ - 55 to +150 Drain Current-Pulsed Gate-to-Source Voltage TJ , TSTG Units 800 IDM VGS PD Value 60 Operating Junction and Storage Temperature Range Thermal Resistance Symbol Characteristic Typ. Max. Units RJA Junction-to-Ambient -- 62.5 /W Rev. A N-CHANNEL Small Signal MOSFET 2N7002MTF Electrical Characteristics (TC=25 unless otherwise specified) Symbol Characteristic Min. Typ. Max. Units Test Condition BVDS

Q 1LV164245D 1LV164245D 1TPS2211-D 1LV164245D 1LV164245D 1DRX3975-Q 1HEF4053BD 1M340MP--D HFF300B02A HFF300B02A HFF300B02A HFF300B02A HFF300B02A HFF300B02A HFF300B02A HFF300B02A HFF300B02A HFF300B02A HFF300B02A HFF300B02A HFF300B02A HFF300B02A HFF300B02A T2N7002M-B T2N7002M-B T2SC2412KB PART NAME PART DESCRIPTION C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA R CHIP C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA C CHIP CERA DIODE CHIP DIODE CHIP DIODE CHIP DIODE CHIP DIODE CHIP DIODE CHIP DIODE CHIP DIODE CHIP IC CHIP TV DECODER IC CHIP SDRAM IC CHIP SDRAM IC CHIP FLASH MEMORY IC CHIP REGULATOR IC CHIP DRIVE IC CHIP IC CHIP IC CHIP IC CHIP IC CHIP IC C

2N7002M MOSFET( N-Channel ) D WBFBP-03B (1.2x1.2x0.5) unit: mm DESCRIPTION TOP High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching G performance. They can be used in most applications requiring up to 400mA DC D and can deliver pulsed currents up to 2A. These products are particularly suited 1. GATE for low voltage, low current applications such as small servo motor control, power 2. SOURCE MOSFET gate drivers, and other switching applications. S BACK 3. DRAIN S G FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. APPLICATION N-Channel Enhancement Mode Field Effect Transistor For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: 72 D 72 G S MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units 60 V VDS Drain-Source voltage ID Drain Current 1

Online POWER MOSFETS 1 SupreMOS(R) MOSFET TRANSISTORS (CONT.) ENHANCEMENT MODE FETs (CONT.) VDS Mfg. Part No. (V) 30 FDN357N 30 NDS355AN 30 FDT439N 30 NDS351AN 50 BSS138 60 RFP30N06LE* 60 NDT3055 60 NDT3055L 60 NDT014L 60 2N7000* 60 2N7002 60 2N7002DW 60 2N7002MTF 60 RFP50N06 60 RFP70N06 60 NDP7060 100 RFP12N10L* 100 BSS123 500 IRF840B 500 IRFP450B ID Rds(on) (A) () 1.9 90 1.7 125 6.3 45 1.2 250 0.22 3.5 30 47 4 100 4 100 2.8 160 0.2 5 0.12 0.075 0.12 0.075 0.12 0.075 50 0.022 70 0.014 75 13 12 200 0.17 6 8 800 14 390 Rds(on) Test Voltage, Vgs PD (V) (W) Pkg. 4.5 0.5 SuperSOT 10 0.5 SuperSOT 4.5 3 SOT-223 10 0.5 SuperSOT 10 0.36 SOT-23 5 96 TO-220-3 10 3 SOT-223 10 3 SOT-223 10 3 SOT-223-4 10 0.4 TO-92 10 0.2 SOT-23 5 0.2 SC-70 10 0.2 SOT-23 10 131 TO-220-3 10 150 TO-220-3 10 150 TO-220-3 5 60 TO-220-3 10 0.36 SOT-23 10 147 TO-220 10 205 TO-3PN Tape Cut Price Each Stock No. 58K8842 58K2018 38C7188 58K9481 58K8769 58K9514 58K2021 72K9001 34C1635 58K9650 58K9651 05R0387 34C2015 58K9518 58K2128 34C

.7 0.5 NDS355N 30 Single FDN361AN 30 Single 0.1 0.15 - - 2.1 1.8 0.5 NDS351AN 30 Single 0.16 0.25 - - 1.9 1.2 0.5 NDS351N 30 Single FDN372S 30 SyncFET 0.04 0.05 - - 5.8 2.6 0.5 BSS138 50 Single 3.5 6 - - 1.7 0.22 0.36 FDN5630 60 Single 0.1 - - - 7 1.7 0.5 2N7002MTF 60 Single 5 - - - - 0.115 0.2 MMBF170 60 Single 5 - - - 1.7 0.5 0.3 NDS7002A 60 Single 2 3 - - 1.7 0.28 0.3 2N7000 60 Single 5 5.3 - - 1.7 0.2 0.4 2N7002 60 Single 7.5 7.5 - - 1.7 0.12 0.2 BSS123 100 Single 6 - - - 1.4 0.17 0.36 Replaced by NDS355AN Replaced by NDS351AN SOT-23/SuperSOT-3 P-Channel NDS0605 -60 Single 5 - - - 1.8 0.18 0.36 FDN5618P -60 Single 0.17 0.23 - - 8.6 1.2 0.5 NDS0610 -60 Single 10 20 - - 1.8 0.12 0.36 BSS84 -50 Single 10 - - - 0.9 0.13 0.36 www.fairchildsemi.com Discrete SuperSOT-3/SOT-23 (Continued) RDS(ON) Max () @ VGS = BVDSS Min. (V) Config. 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V FDN360P -30 Single 0.03 0.125 - - 6.2 2 0.5 NDH8502P -30 Single FDN358P -30 Single 0.125 0.2 - - 4 1.5 0.5 NDS356AP -30 Single

stor housed in a surface mount SOT-23 for micro- assembly applications. This device is an excellent choice for switching applications where breakdown (B,) and low on-resistance are important. ORDERING INFORMATION Part Number Temperature Range Package Type 2N7002M 55C to +150C Plastic SOT-23 Package 2N7002X -55C to +150C Sorted Chips in Carriers PRODUCT SUMMARY V erypss Foscony L (Vv) (Q) (A) 60 75 0.115 Pin Connections SOT-23 DRAIN 1 2N7002 10-7ABSOLUTE MAXIMUM RATINGS (T, = +25C unless otherwise specified.) Parameter Conditions Continuous Drain A= T, = 100C T,= T 8 80 -55 to 1 -55 to 150 2N7002 Therma] Resistance Limits Units Junction-to-Ambient 625 K/w NOTE: |. Pulse width limited by maximum junction temperature. SPECIFICATIONS' Parameter Conditions Ve Gate- Zero Gate Vi On-State Drain-Source Forward T: Common Source Reverse T T DD - Von = 10V, Rg = 250 (Switching time is essentially of pp = L5V,R,. = Vou = 10V, Rg = 250 (Switching time is essentially of Notes: 1. T, = 25C unless otherwise spec

100 24 60 FBPT-723 SC-70 SC-70 SC-75 SOT-23/SC-59 SOT-23/SC-59 SOT-23/SC-59 SC-59 SC-59 SC-59 SC-59 SC-59 SC-59 SOT-23 SOT-23 SOT-23 SOT-23/SC-59 SOT-23/SC-59 Drain to Source Voltage Gate to Source Voltage VDSS V Outline No. N CHANNEL ENHANCEMENT MOS FET 2N7002M1PT CHT2302WPT 2N7002EPT 2N7002TPT CHT2302PT CHT2324PT CHT2312PT CHM2310PT CHM2304PT CHM2316PT CHM2314PT CHM2342PT CHM2362PT CHT870PT CHT170PT CHM310PT CHT100PT 2N7002PT 72 22 702E 702 02 24 12 10 04 16 14 42 62 BT AT 310 AT 7002 60 20 60 60 20 20 20 30 30 30 30 40 60 60 60 100 30 60 N CHANNEL ENHANCEMENT MOS FET CHM7400SPT 740S 30 +/-12 2800 0.085 2300/4.5 1.6 1 24 SC-88 CHM2316QPT 2316 30 +/-20 6000 0.050 4900/4.5 3 1 30 SC-74 +/-20 +/-12 +/-20 +/-20 +/-20 500 5400 500 2000 300 4.5 0.036 2 0.065 5.3 500/10 4300/2.5 300/10 500/10 75/4.5 2.5 1.2 2.0 2.5 2.5 1 1 10 10 1 48 20 60 60 48 SC-70 SC-59 SOT-23 SOT-23 SOT-23/SC-59 N CHANNEL ENHANCEMENT MOS FET 2N7002ESEPT CHM2308ESPT CHM1592PT CHM1273PT 2N7002ESPT PK1 2308 1592 1273 PK1 60 20 60 6

361AN 30 Single 0.1 0.15 - - 2.1 1.8 0.5 0.5 NDS351AN 30 Single 0.16 0.25 - - 1.3 1.4 FDN372S 30 SyncFET 0.04 0.05 - - 5.8 2.6 0.5 BSS138 50 Single 3.5 6 - - 1.7 0.22 0.36 FDN5630 60 Single 0.1 0.12@6V - - 7 1.7 0.5 NDS7002A 60 Single 2 3 - - 1.7 0.28 0.3 2N7002MTF 60 Single 5 - - - - 0.115 0.2 MMBF170 60 Single 5 - - - 1.7 0.5 0.3 2N7002 60 Single 7.5 7.5 - - 1.7 0.12 0.2 FDN363N 100 Single 0.24 0.35@6V - - 4 1 0.5 BSS123 100 Single 6 10 - - 1.7 0.17 0.36 Single 0.17 0.23 - - 8.6 1.2 0.5 0.36 SuperSOT-3/SOT-23 P-Channel -60 FDN5618P NDS0605 -60 Single 5 - - - 1.8 0.18 NDS0610 -60 Single 10 20 - - 1.8 0.12 0.36 BSS84 -50 Single 10 - - - 0.9 0.13 0.36 FDN360P -30 Single 0.08 0.125 - - 6.2 2 0.5 FDN358P -30 Single 0.125 0.2 - - 4 1.5 0.5 NDS356AP -30 Single 0.2 0.3 - - 3.4 1.1 0.5 NDS352AP -30 Single 0.3 0.5 - - 2 0.9 0.5 FDV304P -25 Single - 1.1 1.5@2.7V - 1.1 0.46 0.35 FDV302P -25 Single - 10 13@2.7V - 0.22 0.12 0.35 FDN304P -20 Single - 0.052 0.07 0.1 12 2.4 0.5 www.fairchildsemi.com 2-6 Fairchi