2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 -- 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 C - - 60 V VGS gate-source voltage Tamb = 25 C - - 20 V ID drain current Tamb = 25 C; VGS = 10 V - - 340 mA RDSon drain-source on-state resistance Tj = 25 C; VGS = 10 V; ID = 500 mA - 1 1.6 [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 2N7002BKV NXP Semiconductors 60 V,

2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 -- 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 C - - 60 V VGS gate-source voltage Tamb = 25 C - - 20 V ID drain current Tamb = 25 C; VGS = 10 V - - 350 mA RDSon drain-source on-state resistance Tj = 25 C; VGS = 10 V; ID = 500 mA - 1 1.6 [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 2N7002BK NXP Semiconductors 60 V, 350 mA N-chann

rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 -- 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 C - - 60 V VGS gate-source voltage Tamb = 25 C - - 20 V ID drain current Tamb

2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 2 -- 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Logic-level compatible Trench MOSFET technology Ultra thin package profile with 0.37 mm height ESD protection up to 2 kV 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 C - - 60 V VGS gate-source voltage -20 - 20 V - - 450 mA - 1 1.6 drain current ID VGS = 10 V; Tamb = 25 C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = 10 V; ID = 450 mA; Tj = 25 C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, m

2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 -- 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 C - - 60 V VGS gate-source voltage Tamb = 25 C ID drain current RDSon drain-source on-state resistance - - 20 V Tamb = 25 C; VGS = 10 V [1] - - 450 mA Tj = 25 C; VGS = 10 V; ID = 500 mA [2] - 1 1.6 [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Pulse test: tp 300 s; 0

2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 -- 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 C - - 60 V VGS gate-source voltage Tamb = 25 C ID drain current RDSon drain-source on-state resistance - - 20 V Tamb = 25 C; VGS = 10 V [1] - - 450 mA Tj = 25 C; VGS = 10 V; ID = 500 mA [2] - 1 1.6 [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Pulse test: tp 300 s; 0

2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 -- 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS VGS Conditions Min Typ Max Unit drain-source voltage Tamb = 25 C - - 60 V gate-source voltage Tamb = 25 C - - 20 V ID drain current Tamb = 25 C; VGS = 10 V - - 310 mA RDSon drain-source on-state resistance Tj = 25 C; VGS = 10 V; ID = 500 mA - 1 1.6 [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 2N7002BKW NXP Semiconductors 60 V, 310 mA N-chann

rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 -- 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 C - - 60 V VGS gate-source voltage Tamb = 25 C ID drain current RD

2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 -- 25 October 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 C - - 60 V VGS gate-source voltage Tamb = 25 C ID drain current RDSon drain-source on-state resistance - - 20 V Tamb = 25 C; VGS = 10 V [1] - - 450 mA Tj = 25 C; VGS = 10 V; ID = 500 mA [2] - 1 1.6 [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Pulse test: tp 300 s; 0.01. 2

2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 -- 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS Conditions Min Typ drain-source voltage Tamb = 25 C - VGS gate-source voltage Tamb = 25 C - ID drain current Tamb = 25 C; VGS = 10 V RDSon drain-source on-state resistance Tj = 25 C; VGS = 10 V; ID = 500 mA [1] [1] Max Unit - 60 V - 20 V - - 310 mA - 1 1.6 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 2N7002BKW Nexperia 60 V, 310 mA N-channel Trench

2N7002BKMB 60 V, single N-channel Trench MOSFET Rev. 2 -- 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Logic-level compatible Trench MOSFET technology Ultra thin package profile with 0.37 mm height ESD protection up to 2 kV 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 C - - 60 V VGS gate-source voltage -20 - 20 V - - 450 mA - 1 1.6 drain current ID VGS = 10 V; Tamb = 25 C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = 10 V; ID = 450 mA; Tj = 25 C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mountin

2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 -- 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 C - - 60 V VGS gate-source voltage Tamb = 25 C - - 20 V ID drain current Tamb = 25 C; VGS = 10 V - - 300 mA RDSon drain-source on-state resistance Tj = 25 C; VGS = 10 V; ID = 500 mA - 1 1.6 [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 2N7002BKS NXP Semiconductors

2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 -- 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 C - - 60 V VGS gate-source voltage Tamb = 25 C - - 20 V ID drain current Tamb = 25 C; VGS = 10 V - - 350 mA RDSon drain-source on-state resistance Tj = 25 C; VGS = 10 V; ID = 500 mA - 1 1.6 [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 2N7002BK NXP Semiconductors 60 V, 350 mA N-chann

2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 -- 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS VGS Conditions Min Typ Max Unit drain-source voltage Tamb = 25 C - - 60 V gate-source voltage Tamb = 25 C - - 20 V ID drain current Tamb = 25 C; VGS = 10 V - - 290 mA RDSon drain-source on-state resistance Tj = 25 C; VGS = 10 V; ID = 500 mA - 1 1.6 [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 2N7002BKT NXP Semiconductors 60 V, 290 mA N-chann

hts reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 2 -- 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Logic-level compatible Trench MOSFET technology Ultra thin package profile with 0.37 mm height ESD protection up to 2 kV 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 C - - 60 V VGS gate-source voltage -20 - 20