2N7002-HF (N-Channel) RoHS Device Halogen Free SOT-23 Features -Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) D Equivalent Circuit 0.056(1.40) 0.047(1.20) D G G : Gate S : Source D : Drain G S 0.083(2.10) 0.066(1.70) 0.006(0.15) 0.002(0.05) 0.044(1.10) 0.035(0.90) 0.103(2.60) 0.086(2.20) S 0.020(0.50) 0.013(0.35) Maximum Ratings (at TA=25C) 0.007(0.20)min Symbol Value VDS 60 V Drain current ID 250 mA Power dissipation PD 350 mW TJ, TSTG -55 ~ +150 C Parameter Drain-Source voltage Junction and storage temperature 0.006(0.15)max Unit Dimensions in inches and (millimeter) Electrical Characteristics (at TA=25C unless otherwise noted) Parameter Conditions Drain-Source breakdown voltage VGS=0V, ID=10A Gate-Threshold voltage VDS=VGS, ID=250A Gate-body leakage VDS=0V, VGS=15V Symbol Min Typ V(BR)DSS 60 70 Vth(GS) 1 1.5 Max Unit V IGSS 10 VDS=60V, VGS=0V Zero gate voltage drain current 2.5 1 IDSS A 500 VDS=60V, VGS=0V, TJ=125C VGS=10V, VDS=7.5V On-state drain current 800 1300 500 700 ID(ON) VGS=4.5V,

2N7002-HF (N-Channel) RoHS Device Halogen Free SOT-23 Features -Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) D Equivalent Circuit 0.056(1.40) 0.047(1.20) D G G : Gate S : Source D : Drain G S 0.083(2.10) 0.066(1.70) 0.006(0.15) 0.002(0.05) 0.044(1.10) 0.035(0.90) 0.103(2.60) 0.086(2.20) S 0.020(0.50) 0.013(0.35) Maximum Ratings (at TA=25C) 0.007(0.20)min Symbol Value VDS 60 V Drain current ID 250 mA Power dissipation PD 350 mW TJ, TSTG -55 ~ +150 C Parameter Drain-Source voltage Junction and storage temperature 0.006(0.15)max Unit Dimensions in inches and (millimeter) Electrical Characteristics (at TA=25C unless otherwise noted) Parameter Conditions Drain-Source breakdown voltage VGS=0V, ID=10A Gate-Threshold voltage VDS=VGS, ID=250A Gate-body leakage VDS=0V, VGS=15V Symbol Min Typ V(BR)DSS 60 70 Vth(GS) 1 1.5 Max Unit V IGSS 10 VDS=60V, VGS=0V Zero gate voltage drain current 2.5 1 IDSS A 500 VDS=60V, VGS=0V, TJ=125C VGS=10V, VDS=7.5V On-state drain current 800 1300 500 700 ID(ON) VGS=4.5V,