2N3906N Semiconductor PNP Silicon Transistor Descriptions * General small signal application * Switching application Features * Low collector-emitter saturation voltage : 0.4V (Max.) @ IC=-50mA, IB=-5mA * Low collector output capacitance : 4.5pF (Max.) @ VCB=-5V, IE=0, f=1MHz * Complementary pair with 2N3904N Ordering Information Type NO. Marking 2N3906N 2N3906 Package Code T0-92N Outline Dimensions unit : mm 4.20~4.40 4.20~4.40 2.25 Max. 2.14 Typ. 13.50~14.50 0.52 Max. 0.90 Max. 1.27 Typ. 1 2 3 0.40 Max. 3.09~3.29 3.55 Typ PIN Connections 1. Emitter 2. Base 3. Collector KSD-T0C039-000 1 2N3906N Absolute Maximum Ratings (Ta=25C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current IC -200 mA Collector power dissipation PC 400 mW Junction temperature TJ 150 C Tstg -55~150 C Storage temperature range Electrical Characteristics Ta=25C Characteristic Symbol Collector-emitter