2N3906-G (PNP) RoHS Device Features TO-92 -PNP silicon epitaxial planar transistor for 0.185(4.70) 0.173(4.40) 0. 135 ( 3. 43) M i n. 0.185(4.70) 0.169(4.30) 2N3904-G is recommended. 0.055 (1. 14) 0. 0 20( 0 .51 ) 0. 0 14( 0. 36) 0. 043(1. 10) 0.022(0.55) 0.015(0.38) -This transistor is available in the SOT-23 0.146(3.70) -As complementary type, the NPN transistor 0. 5 71(1 4 .5 0 ) 0.555 (1 4. 1 0) case with the type designation MMBT3906-G. Collector 3 0.050(1.270)TYP 2 Base 0. 01 5( 0. 38 ) M ax. 0.0 63(1. 60 ) Ma x. 1. Emitter 2. Base 0.104(2.64) 0.096(2.44) 1 2 3 1 Emitter 0.130(3.30) switching and amplifier application. 3. Collector Dimensions in inches and (millimeter) Maximum Ratings (at TA=25C unless otherwise noted) Parameter Symbol Min Max Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -40 V Emitter-Base voltage VEBO -5 V Collector Current-Continuous IC -0.2 A Collector Dissipation PC 0.625 W +150 O Storage Temperature and Junction Temperature TSTG , TJ -55 C REV:

or current and thus regulate VINREG at 2V with respect to SVOUT-. See the Applications Information section. If this input voltage regulation feature is not desired, connect VINREG to INTVCC. TEMP+ (J1, J6): Temperature Sensor, Positive Input. Emitter of a 2N3906-Genre PNP bipolar junction transistor (BJT). Optionally interface to temperature monitoring circuitry such as LTC(R)2997, LTC2990, LTC2974 or LTC2975. Otherwise leave electrically open. Pins J1 and J6 are electrically connected together internal to the LTM4651, and thus it is only necessary to connect one TEMP+ pin to monitoring circuitry. The remaining TEMP+ pin can be used for redundant connectivity or routed to an ICT test point for design-for-test considerations, as desired. Rev. A For more information www.analog.com 9 LTM4651 PIN FUNCTIONS TEMP- (J2, J7): Temperature Sensor, Negative Input. Collector and base of a 2N3906-Genre PNP bipolar junction transistor (BJT). Optionally interface to temperature monitoring circuitry

2N3906-G (PNP) RoHS Device Features TO-92 -PNP silicon epitaxial planar transistor for 0.185(4.70) 0.173(4.40) 0. 135 ( 3. 43) M i n. 0.185(4.70) 0.169(4.30) 2N3904-G is recommended. 0.055 (1. 14) 0. 0 20( 0 .51 ) 0. 0 14( 0. 36) 0. 043(1. 10) 0.022(0.55) 0.015(0.38) -This transistor is available in the SOT-23 0.146(3.70) -As complementary type, the NPN transistor 0. 5 71(1 4 .5 0 ) 0.555 (1 4. 1 0) case with the type designation MMBT3906-G. Collector 3 0.050(1.270)TYP 2 Base 0. 01 5( 0. 38 ) M ax. 0.0 63(1. 60 ) Ma x. 1. Emitter 2. Base 0.104(2.64) 0.096(2.44) 1 2 3 1 Emitter 0.130(3.30) switching and amplifier application. 3. Collector Dimensions in inches and (millimeter) Maximum Ratings (at TA=25C unless otherwise noted) Parameter Symbol Min Max Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -40 V Emitter-Base voltage VEBO -5 V Collector Current-Continuous IC -0.2 A Collector Dissipation PC 0.625 W +150 O Storage Temperature and Junction Temperature TSTG , TJ -55 C REV:

2N3906-G (PNP) RoHS Device Features TO-92 -PNP silicon epitaxial planar transistor for 0.1 85(4.70 ) 0.1 73(4.40 ) 0.185(4.70) 0.169(4.30) 2N3904-G is recommended. 0. 135 ( 3. 43) M i n. 0.055(1. 14) 0. 0 20( 0 .51) 0. 0 14( 0. 36) 0.043(1. 10) 0.0 22(0.55 ) 0.0 15(0.38 ) -This transistor is available in the SOT-23 0.146(3.70) -As complementary type, the NPN transistor 0. 5 71(1 4 .5 0 ) 0.555 (1 4. 1 0) case with the type designation MMBT3906-G. Collector 3 0. 01 5( 0. 38) M ax. 0.130(3.30) switching and amplifier application. 0.063(1. 60) Ma x. 1. Emitter 0.0 50(1.27 ) Typ. 2 Base 2. Base 0.1 04(2.64 ) 0.0 96(2.44 ) 1 2 3 1 Emitter 3. Collector Dimensions in inches and (millimeter) Maximum Ratings(T A=25oC unless otherwise noted) Parameter Symbol Min Max Unit Collector-Base voltage V CBO -40 V Collector-Emitter voltage V CEO -40 V Emitter-Base voltage V EBO -5 V Collector current-Continuous IC -0.2 A Col lec tor di ssipa tion PC 0. 62 5 W +1 50 O St or ag e tempe rat ur e an d jun ction tempe r

d terminating to SGND connect to this pin. Connect IMONb to IMONa to achieve default power inductor analog indicator current characteristics: 1V at full scale (4A) load current. (See IMONa.) TEMP+ (J1, J6): Temperature Sensor, Positive Input. Emitter of a 2N3906-Genre PNP bipolar junction transistor (BJT). Optionally interface to temperature monitoring circuitry such as LTC(R)2997, LTC2990, LTC2974 or LTC2975. Otherwise leave electrically open. Pins J1 and J6 are electrically connected together internal to the LTM4653, and thus it is only necessary to connect one TEMP+ pin to monitoring circuitry. The remaining TEMP+ pin can be used for redundant connectivity or routed to an ICT test point for design-for-test considerations, as desired. TEMP- (J2, J7): Temperature Sensor, Negative Input. Collector and base of a 2N3906-Genre PNP bipolar junction transistor (BJT). Optionally interface to temperature monitoring circuitry such as LTC2997, LTC2990, LTC2974 or LTC2975. Otherwise leave elec

d terminating to SGND connect to this pin. Connect IMONb to IMONa to achieve default power inductor analog indicator current characteristics: 1V at full scale (4A) load current. (See IMONa.) TEMP+ (J1, J6): Temperature Sensor, Positive Input. Emitter of a 2N3906-Genre PNP bipolar junction transistor (BJT). Optionally interface to temperature monitoring circuitry such as LTC(R)2997, LTC2990, LTC2974 or LTC2975. Otherwise leave electrically open. Pins J1 and J6 are electrically connected together internal to the LTM4653, and thus it is only necessary to connect one TEMP+ pin to monitoring circuitry. The remaining TEMP+ pin can be used for redundant connectivity or routed to an ICT test point for design-for-test considerations, as desired. 10 TEMP- (J2, J7): Temperature Sensor, Negative Input. Collector and base of a 2N3906-Genre PNP bipolar junction transistor (BJT). Optionally interface to temperature monitoring circuitry such as LTC2997, LTC2990, LTC2974 or LTC2975. Otherwise leave e

" specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW (Ta=25C) Collector Current ICM: -200mA Collector - Base Voltage V(BR)CBO: -40V G H 1Emitter 2Base 3Collector J A CLASSIFICATION OF hFE(1) D REF. B Product-Rank 2N3906-O 2N3906-Y 2N3906-G Range 100~200 200~300 300~400 A B C D E F G H J K K E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector 3 2 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (Ta = 25C unless otherwise specified) Parameter Symbol Ratings Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 V IC -0.2 A PC 625 mW TJ, TSTG +150, -55 ~ +150 C Collector Current -Continuous Cpllector Power Dissipation Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise specified) Symbol Min. Typ. Max. Unit Collector-Base Breakdown Voltage Parameter V(BR)CBO -40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO -40 - - V I