V2N2219A JANTXV2N2219A 251 JANS2N2219AJANS2N2219A 251 JANSR2N2219A JANSR2N2219A 251 JAN2N2219ALJAN2N2219AL 251 JANTX2N2219AL JANTX2N2219AL 251 2N2219AL JANTXV2219AL 2N2219AL JANTXV2219AL 251 JANS2N2219AL JANS2N2219AL 251 JANSR2N2219AL JANSR2N2219AL 255 JAN2N2222A JAN2N2222A 255 JANTX2N2222A JANTX2N2222A 255 2N2222A JANTXV2N2222A 2N2222A JANTXV2N2222A 255 JANS2N2222AJANS2N2222A 255 JANSR2N2222A JANSR2N2222A Slash Die-Size Sheet Die-Size QPL Die LevelQPL DiePackage Level Package Type VEBO VEBO Power Rtja PowerTstg/Top Rtja Tstg/Top VCE(sat) VCE(sat) Type VCEO Rad Hard Rad(V) Hard VCBO VCEO (V) (V) VCBO (V)IC (A) IC (A) Max HFE Max HFE (V) (V) (W) Ta (C/W) (W) Ta (C) (C/W) (C) (V) (V) 30 X 182 30 30 X 30- - TO-18 TO-18 NPN - NPN 80 - 120 80 7 120 0.5 7 0.5 0.5 325 0.5 -65 to +200 325 120 -65 to +200 5 120 5 30 X 182 30 30 X 30- - TO-18 TO-18 NPN - NPN 80 - 12

-JQR-B 1N4002QCSM 1N4003QCSM 1N4003QCSM-JQR-B 1N4004QCSM 1N4004QCSM-JQR-B Quad Diode Quad Diode Quad Diode Quad Diode Quad Diode Quad Diode Quad Diode 2N2218AQF Quad Transistor 2N2218AXQF Quad Transistor 2N2219AQF Quad Transistor 2N2221AQF Quad Transistor 2N2222AQCSM Quad Transistor LCC6 2N2222AQF Quad Transistor 2N2222AQLCC20 2N2222EX8CSM Quad Transistor 8 Transistor Array LCC2 LCC2 LCC2 LCC2 LCC2 LCC2 LCC2 Quad Ceramic Flat Pack Quad Ceramic Flat Pack Quad Ceramic Flat Pack Quad Ceramic Flat Pack Polarity PN PN PN PN PN PN PN Output Line Load Voltage Regulation Regulation Voltage Voltage drop drop SIDE 1 SIDE 1 SIDE 1 (typ.) (max.) SIDE 2 SIDE 2 SIDE 2 (V) (max. %) (max. %) 15V 1.00% 1.00% 2V @ VCE/IC IC(cont) HFE(min) HFE(max) FET: VDSS ID(cont) Diode: Voltage Current 100V 4x1A 100V 4x1A 200V 4x1A 300V 4x1A 300V 4x1A 400V 4x1A 400V 4x1A 2.5V FT RDSS diode diode diode diode diode diode diode - - - NPN 40V 0.8A 40 120 10/0.15 250MHz NPN 40V 0.8A 40 120 10/0.15 250MHz NP

designators "M", "D", "P", "L", "R", "F', "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. * 1.2 Physical dimensions. The device packages for the encapsulated device types are as follows: (2N2221A and 2N2222A) (TO-18) in accordance with figure 1, (UA) in accordance with figure 2, (UB, UBC, UBN, and UBCN) in accordance with figure 3. The dimensions and topography for JANHC and JANKC unencapsulated die is as follows: The B version die in accordance with figure 4. The C version die in accordance with figure 5. The D version die in accordance with figure 6. 1.3 Maximum ratings. Unless otherwise specified TA = +25C. Types All devices IC VCBO VCEO VEBO TJ and TSTG mA dc V dc V dc V dc C 800 75 50 6 -65 to +200 Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact information can change, you may want to v

el designators "M", "D", "P", "L", "R", "F', "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. 1.2 Physical dimensions. The device packages for the encapsulated device types are as follows: (2N2221A and 2N2222A) (TO-18) in accordance with figure 1, (UA) in accordance with figure 2, (UB, UBC, UBN, and UBCN) in accordance with figure 3. The dimensions and topography for JANHC and JANKC unencapsulated die is as follows: The B version die in accordance with figure 4. The C version die in accordance with figure 5. The D version die in accordance with figure 6. 1.3 Maximum ratings. Unless otherwise specified TA = +25C. Types All devices IC VCBO VCEO VEBO TJ and TSTG mA dc V dc V dc V dc C 800 75 50 6 -65 to +200 Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact information can change, you may want to v

all be completed by 7 May 2010. INCH-POUND MIL-PRF-19500/255W w/AMENDMENT 1 7 February 2010 SUPERSEDING MIL-PRF-19500/255W 6 September 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2221A, 2N2221AL, 2N2222A, 2N2222AL, 2N2221AUA, 2N2222AUA, 2N2221AUB, 2N2222AUB, 2N2221AUBC, AND 2N2222AUBC, JAN, JANJ, JANTX, JANTXV, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHC, JANHCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, s

to comply with this revision shall be completed by 15 May 2002. MIL-PRF-19500/255N 15 February 2002 SUPERSEDING MIL-PRF-19500/255M 20 March 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2221A, 2N2221AL, 2N2222A, 2N2222AL, 2N2221AUA 2N2222AUA, 2N2221AUB, AND 2N2222AUB, JAN, JANJ, JANTX, JANTXV, JANTXVD, JANTXVH, JANTXVM, JANTXVR, JANS, JANSD, JANSH, JANSM, JANSR, JANHC, JANHCM, JANHCD, JANHCR, JANHCH, JANKC, JANKCM, JANKCD, JANKCR, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to four r

2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2?218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218A and 2N2219A) and in Jedec TO-18 (for 2N2221A and 2N2222A) metal cases. They are designed for high-speed switching appli cations at collector currents up to 500 mA, and tea- ture useful current gain over a wide range of collec- tor current, low leakage currents and low saturation voltages. & 2N2218A/2N2219A approved to CECC 50002-100, 2N2221AN2N2222A approved to CECC 50002101 available on request. TO-39 TO-18 INTERNAL SCHEMATIC DIAGRAM Cc B NPN S Gouy E ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VcBo Gollecter-base Voltage (I_ = 0) 75 Vv VcEo Collector-emitter Voltage (Ip = 0) 40 V VeEBo Emitter-base Voltage (Ic = 0) 6 Vv le Collector Gurrent 0.8 A Prot Total Power Dissipation at Tamy < 25 C for 2N2218A and 2N2219A 0.8 WwW for 2N2221A and 2N2222A 0.5 Ww at Tease = 25 C for 2N2218A an

2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218A and 2N2219A) and in Jedec TO-18 (for 2N2221A and 2N2222A) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218A/2N2219A approved to CECC 50002-100, 2N2221A/2N2222A approved to CECC 50002-101 available on request. TO-39 TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-base Voltage (I E = 0) 75 V V CEO Collector-emitter Voltage (I B = 0) 40 V V EBO Emitter-base Voltage (I C = 0) IC Pt o t 6 V 0.8 A 2N2219A 2N2222A 0.8 0.5 W W 2N2219A 2N2222A 3 1.8 W W Collector Current Total Power Dissipation at T amb 25 C for 2N2218A and for 2N2221A and at T c as e 25

O0MA 175C | 300MWF 180M 5P 1OOMN 2MAJ ALA |VAL ) BC107 2N929 0 BCY57 NS | TOiB Lol 25V | 20V 5V 100MA 175C | 300MWF 150M ; 5P | 200MN 2MA] ALA VAL | BC109 | 2N930 0 BCY58 NS | 7018 Lol 32v | 32V ] 7V) | 200MA 200C 1WF 125M | 6P 120MN 2MA|AMG VAL | BFX95 | 2N2222A| 0 BCY58A NS | T018 LoL 32V | 32V | 7V 100MA 175C | 390MWF 120M | 7P 125MN 2MA|ALG |ITB| BC107 | A157 0 BCY58B NS | T018 Lot 32V 32V Vv LOOMA 175C | 390MWF 120M | 7P 175MN 2MA|ALG ITB] BC1O7 | A157 0 BCY58C NS | TO18 Lol 32V 32V Vv 1O0MA 175C | 390MWF 120M | 7P | 250MN 2MA|ALN JITB| BCi09 | 2N930 0 BCY580 NS | TO18 Lol 32V | 32V WV 100MA 175C | 390MWF 120M | 7P | 350MN 2MA/ALN JITB| BCi09 | 2N930 0 BCY58/7 NS | T018 Lol 32V | 32V wv 200MA 2000 iWF 125M | 6P 120MN 2MA]AMG |VAL | BFX95 | 2N2222A] 0 BCY58/8 NS | 7018 LOL 32V | 32v | 7V 200MA 2000 IWF 125M } 6P 180MN 2MA|AMG |VAL | BFX95 | 2N2222A| 0 BCY58/9 NS | TO18 LoL 32V | 32V 1 7V 200MA 200C IWF 125M | 6P | 250MN : AMG {VAL | BFX95 | 2N2222A] 0 BC

ation 1.8 W Abmessungen in mm Dimensions in mm 254 Koltektor mit Gehduse verbunden Colfector connected with case Normgehause Case E 18A3 DIN 41876 JEDEC TO 18 Gewicht - Weight max. 0,5 g Absolute Grenzdaten 2N 2221 2N2221A Absolute maximum ratings 2N 2222 2N2222A Kollektor-Basis-Sperrspannung UcBo 60 75 Vv Collector-base voitage Kollektor-Emitter-Sperrspannung UcEO 30 40 Vv Collector-emitter voltage Emitter-Basis-Sperrspannung VEBO 5 6 Vv Emitter-base voltage Kollektorstrom Io 800 mA Collector current Gesamtverlustleistung Total power dissipation tamb = 25 oc Prot 500 mw lamb = 45 sc Prot 430 mW lease = 25 sc Prot 1,8 Ww loase = 45C Prot 1,55 Ww Sperrschichttemperatur tj 175 C Junction temperature Lagerungstemperaturbereich Istg -65 ... +200 C Storage temperature range B 2/V.2.551/0875A 1 4892 N 2221 -2N 2221 A-2N 2222: 2N2222A 70259 Th ' UcER 80 60 2N2227TA 2N2222A 40 2N 2221 2N 2222 20 Oo 0 40 80 120 c 0,1 1 10 kQ Tamb: case > Rope Warmewiderstande Min. Typ. Max. Therm

0m} 5P [40/120 ] 10MA) RMS }OBS| BSX20 | 2N2369 | 0 2n744/51 | ns | Tois | LoL rov | 12v | sv | 200ma | 175c} 300mwr | 280m] 5P 140/120 | OMA] RLS|OBS] 85X20 | 2N2369 } 0 2N745 nS | To18 | LoL asy | 30v . 175c | 150MWF ] 10M 20/55 | 10MA| RLGJOBS] BSwe4 | 2N2222A] 0 2NT46 ns | To18 | Lol 45v | 30V zoma | 175C | 150MWF | 10M 45/150 | 1OMALRLG/OBS} BSW64 | 2N2222A| 0 2N747 ns | TO18 | LoL 30v | 30v 2oma | 175C| 200MWF | 10M 30/90 | 10malALS}oas| Bswes | 2N2222A| 0 2N748 ns | To1s | Loi 30v | 30V zoma | 175C| 200MWF | 10M 20/40 | 1omal ALS |OBS| BSW66 | 2N2222A} 0 2N749 NS | TO18 | LOL 45v | 25V zoma | 175C| 200MWF | 50M] . 15/55 | 10MAlRLG|OBS| BSWe6 | 2N2222A] 0 2N750 ns | To18 | LoL sov | 50v 5uMA | 175C} 200MWF | 20M} 7P 4MN imal RLG}ogS| BSwe6 | 2N2222A| 2 2N751 NS | TO18 | Lot 20v | 20v 2oma | 175C | 200MWF | 20M 30/150 | 1OMA}RLG]OB8S} BSWEG | 2N2222A| 0 2N752 nS | To18 | LOL g5v | 45V tooma | 200C } SOOMWF } 200M 4

ILM 2.49K .25W 1% METAL FILM 3.01K .25W 1% METAL FILM 49.9K 25W 1% METAL FILM 3.01K 25W 1% METAL FILM 3.01K .25W 1% METAL FILM 3.01K .25W 1% METAL FILM 3.01K .25W 1% METAL FILM 100-OHM .25W 1%METAL FILM 1RF720 400V 3A 1RF830 MOSFET 500V TIP11 680V 2AG04,5 2N2222A, NPN40V .8A .4W 2N2907A PNP60V .6A .4W FE EEE EB F G05 G06 G04 SF EEEEERREREEERREEEER R28 BE aLL. 40-976 ZO01 Z01 Z01 Z02 Z02 ZO7 Z08 Z09 ZENER 849A487H05 862A288H35 837A693H18 837A693HI18 837A693H17 185A212H12 9448A01H56 185A212H12 1N4761A 75V 5% 1W 1N5384B 160V 5% SW UZ5234 340V 10% SW UZ5234 340V 10% SW UZ5240 400V 10% SW 1N4749A 24V 5% 1W 1N964B 13V 5% 400MW IN4749A 24V 5% IW POWER SUPPLY SUB ASSEMBLY 160758 COMP C01 C02 C03 Co9 C10 Cll LO1 TOL Dol DO3 DO8 LED2 Z03 1co1 IC02 1C03 ICO 1C05 ICo9 STYLE PC BOARD 1496B78H01 CAPACITOR 3536A32H01 3536A32H01 184A663H14 762A680H14 9645A36H05 879A911H10 879A911H10 T62A7TSTHI2 763A209H25 9645A36H05 762A680H14 3512A08H02 3516A08H01 762A680H14 188A669H14 762A680H14 763A209H07 CHOKE 3532A37H01 353

2N2222A Features * * * * SWITCHING TRANSISTOR JAN, JANTX, JANTXV Meets MIL 19500 /255 Collector - Base Voltage 75 V Collector - Current 800 mA High Speed, Medium Current Bipolar Transistor SMALL SIGNAL BIPOLAR NPN SILICON TO-18 COLLECTOR BASE EMITTER Maximum Ratings RATING Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25 C Derate above 25 C Total Device Dissipation @ TC = 25 C Derate above 25 C Operating Junction&Storage Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD TJ, Tstg VALUE 50 75 6 800 500 2.85 1.8 10.3 - 65 to + 200 UNIT Vdc Vdc Vdc mAdc mW mW/C WATTS mW/C C Thermal Characteristics CHARACTERISTIC Thermal Resistance, Junction to Ambient MSCO275A 01-29-98 SYMBOL R JA MAX 350 UNIT C/W DSW2N2222A < - > ( 33807) 2N2222A Electrical Characteristics (TA = 25C unless otherwise noted) OFF CHARACTERISTIC Collector - Emitter Breakdown Voltage (1) ( IC = 10 mA dc, IB = 0 ) Collect

2N2222A Features e Meets MIL 19500 /255 SWITCHING e Collector - Base Voltage 75 V TRANSISTOR Collector - Current 800 mA JAN, JANTX, JANTXV e High Speed, Medium Current Bipolar Transistor SMALL SIGNAL BIPOLAR NPN SILICON TO-18 COLLECTOR BASE EMITTER Maximum Ratings RATING SYMBOL VALUE UNIT Collector - Emitter Voltage Veco 50 Vdc Collector - Base Voltage Veso 75 Vdc Emitter - Base Voltage Veso 6 Vdc Collector Current -- Continuous le 800 mAdc Total Device Dissipation @ T, = 25 C Pp 500 mW Derate above 25 C 2.85 mwW/ C Total Device Dissipation @ T,; = 25 C Pp 1.8 WATTS Derate above 25 C 10.3 mwW/ C Operating Junction&Storage Temperature Range Tu, Tstg - 65 to + 200 Cc Them alCharactenistics CHARACTERISTIC SYMBOL MAX UNIT Thermal Resistance, Junction to Ambient RqJA 350 C/W MSCO275A 01-29-98 DSW2N2222A - > ( 33807)Microsemi Progress Powered by Technology FlectricalCharacteristics (k= 25C unless othe ise noted) 2N2222A OFF CHARACTERISTIC SYMBOL MIN MAX UNIT Collector - Emitte

2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. 2N2219A approved to CECC 50002-100, 2N2222A approved to CECC 50002-101 available on request. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-Base Voltage (IE = 0) 75 V V CEO Collector-Emitter Voltage (I B = 0) 40 V V EBO Emitter-Base Voltage (I C = 0) 6 V 0.8 A 0.8 0.5 W W 3 1.8 W W IC P t ot T stg Tj Parameter Collector Current o Total Dissipation at T amb 25 C for 2N2219A for 2N2222A at T case 25 o C for 2N2219A for 2N2222A St orage Temperature Max. Operating Junction Temperature November 1997 -6