2N2221 2N2222 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221 and 2N2222 are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO UNITS V 30 V 5.0 V 800 mA PD PD 500 mW 1.2 W -65 to +200 C Thermal Resistance TJ, Tstg JA 350 C/W Thermal Resistance JC 146 C/W MAX 10 UNITS nA Continuous Collector Current Power Dissipation Power Dissipation (TC=25C) Operating and Storage Junction Temperature ELECTRICAL SYMBOL ICBO ICBO VEBO IC 60 CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCB=50V VCB=50V, TA=150C - 10 A - 10 nA IC=10A 60 - V IC=10mA 30 - V BVEBO IE=10A 5.0 - V VCE(SAT) IC=150mA, IB=15mA IC=500mA, IB=50mA - 0.4 V - 1.6 V IC=150mA, IB=15mA IC=500mA, IB=50mA 0.6 1.3 V - 2.6 V 250 - MHz Cob VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0,

2N2221 2N2222 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221 and 2N2222 are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO UNITS V 30 V 5.0 V 800 mA PD PD 500 mW 1.2 W -65 to +200 C Thermal Resistance TJ, Tstg JA 350 C/W Thermal Resistance JC 146 C/W MAX 10 UNITS nA Continuous Collector Current Power Dissipation Power Dissipation (TC=25C) Operating and Storage Junction Temperature ELECTRICAL SYMBOL ICBO ICBO VEBO IC 60 CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCB=50V VCB=50V, TA=150C - 10 A - 10 nA IC=10A 60 - V IC=10mA 30 - V BVEBO IE=10A 5.0 - V VCE(SAT) IC=150mA, IB=15mA IC=500mA, IB=50mA - 0.4 V - 1.6 V IC=150mA, IB=15mA IC=500mA, IB=50mA 0.6 1.3 V - 2.6 V 250 - MHz Cob VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0,

Quad Transistors TO-116 Case (14 Pin DIP) TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (nA) MIN MIN MIN MAX hFE (V) @ IC (mA) MIN VCE (SAT ) @ IC Cob (V) (mA) MAX (pF) (MHz) fT NF Typ (dB) MAX MIN MAX tOFF COMMENTS PIN CONFIG.** (ns) MPQ2222 NPN AMPL/SWITCH 60 40 5.0 50 50 30 300 0.40 150 8.0 200 -- -- 4X 2N2222 A MPQ2222A NPN AMPL/SWITCH 60 40 6.0 60 10 40 500 0.30 150 8.0 200 -- -- 4X 2N222A A MPQ2369 NPN SAT SWITCH 40 15 4.5 400 20 20 100 0.25 10 4.0 450 -- 15 4X 2N2369 A MPQ2483 NPN LOW NOISE 60 40 6.0 20 45 150 10 0.50 10 8.0 50 3.0 -- 4X 2N2483 A MPQ2484 NPN LOW NOISE 60 40 6.0 20 45 300 10 0.50 10 8.0 50 2.0 -- 4X 2N2484 A MPQ2906 PNP AMPL/SWITCH 60 40 5.0 50 30 30 300 0.4 150 8.0 200 -- 150 TYP 4X 2N2906 B MPQ2907 PNP AMPL/SWITCH 60 40 5.0 50 30 50 300 0.40 150 8.0 200 -- 150 TYP 4X 2N2907 B MPQ2907A PNP AMPL/SWITCH 60 60 5.0 50 30 50 300 0.40 150 8.0 200 -- 150 TYP 4X 2N2907A B MPQ3467 PNP CORE DRIVER 40 40 5.0 200 30 20 500 0.50 500 2

Quad Transistors TO-116 Case (14 Pin DIP) TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (nA) MIN MIN MIN MAX hFE (V) @ IC (mA) MIN VCE (SAT ) @ IC Cob (V) (mA) MAX (pF) (MHz) fT NF Typ (dB) MAX MIN MAX tOFF COMMENTS PIN CONFIG.** (ns) MPQ2222 NPN AMPL/SWITCH 60 40 5.0 50 50 30 300 0.40 150 8.0 200 -- -- 4X 2N2222 A MPQ2222A NPN AMPL/SWITCH 60 40 6.0 60 10 40 500 0.30 150 8.0 200 -- -- 4X 2N222A A MPQ2369 NPN SAT SWITCH 40 15 4.5 400 20 20 100 0.25 10 4.0 450 -- 15 4X 2N2369 A MPQ2483 NPN LOW NOISE 60 40 6.0 20 45 150 10 0.50 10 8.0 50 3.0 -- 4X 2N2483 A MPQ2484 NPN LOW NOISE 60 40 6.0 20 45 300 10 0.50 10 8.0 50 2.0 -- 4X 2N2484 A MPQ2906 PNP AMPL/SWITCH 60 40 5.0 50 30 30 300 0.4 150 8.0 200 -- 150 TYP 4X 2N2906 B MPQ2907 PNP AMPL/SWITCH 60 40 5.0 50 30 50 300 0.40 150 8.0 200 -- 150 TYP 4X 2N2907 B MPQ2907A PNP AMPL/SWITCH 60 60 5.0 50 30 50 300 0.40 150 8.0 200 -- 150 TYP 4X 2N2907A B MPQ3467 PNP CORE DRIVER 40 40 5.0 200 30 20 500 0.50 500 2

Quad Transistors TO-116 Case (14 Pin DIP) TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (nA) MIN MIN MIN MAX hFE (V) @ IC (mA) MIN VCE (SAT ) @ IC Cob (V) (mA) MAX (pF) (MHz) fT NF Typ (dB) MAX MIN MAX tOFF COMMENTS PIN CONFIG.** (ns) MPQ2222 NPN AMPL/SWITCH 60 40 5.0 50 50 30 300 0.40 150 8.0 200 -- -- 4X 2N2222 A MPQ2222A NPN AMPL/SWITCH 60 40 6.0 60 10 40 500 0.30 150 8.0 200 -- -- 4X 2N222A A MPQ2369 NPN SAT SWITCH 40 15 4.5 400 20 20 100 0.25 10 4.0 450 -- 15 4X 2N2369 A MPQ2483 NPN LOW NOISE 60 40 6.0 20 45 150 10 0.50 10 8.0 50 3.0 -- 4X 2N2483 A MPQ2484 NPN LOW NOISE 60 40 6.0 20 45 300 10 0.50 10 8.0 50 2.0 -- 4X 2N2484 A MPQ2906 PNP AMPL/SWITCH 60 40 5.0 50 30 30 300 0.4 150 8.0 200 -- 150 TYP 4X 2N2906 B MPQ2907 PNP AMPL/SWITCH 60 40 5.0 50 30 50 300 0.40 150 8.0 200 -- 150 TYP 4X 2N2907 B MPQ2907A PNP AMPL/SWITCH 60 60 5.0 50 30 50 300 0.40 150 8.0 200 -- 150 TYP 4X 2N2907A B MPQ3467 PNP CORE DRIVER 40 40 5.0 200 30 20 500 0.50 500 2