2N2222 2N2222A* NPN Silicon *Motorola Preferred Devices 1 EMITTER MAXIMUM RATINGS Symbol 2N2219 2N2222 2N2219A 2N2222A Unit Collector - Emitter Voltage VCEO 30 40 Vdc Collector - Base Voltage VCBO 60 75 Vdc Emitter - Base Voltage VEBO 5.0 6.0 Vdc IC 800 800 mAdc 2N2219,A 2N2222,A Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C PD 0.8 4.57 0.4 2.28 Watts mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 3.0 17.1 1.2 6.85 Watts mW/C Operating and Storage Junction Temperature Range TJ, Tstg - 65 to +200 3 2 1 2N2219,A CASE 79-04, STYLE 1 TO-39 (TO-205AD) C 3 2 1 THERMAL CHARACTERISTICS Characteristic Symbol 2N2219,A 2N2222,A Unit Thermal Resistance, Junction to Ambient RqJA 219 437.5 C/W Thermal Resistance, Junction to Case RqJC 58 145.8 C/W LAST ORDER 23/09/99 LIFETIME BUY Rating 2N2222,A CASE 22-03, STYLE 1 TO-18 (TO-206AA) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherw

2N2222A MAXIMUM RATINGS *also available as JAN, JANTX, 2N2221 | 2N2221A JANTXV Rating Symbol 2N2222 | 2N2222A Unit Collector-Emitter Voltage Vocgo 30 40 Vde GENERAL PURPOSE Collector-Base Valtage Voso 60 75 Vde TRANSISTORS Emitter-Base Voltage Veso 5.0 6.0 Vde NPN SILICON Collector Current - Continuous Ie 800 mAdc Total Device Dissipation @ T, = 25C Pp 0.5 Watts Derate above 25C 2.28 mw/c ie Total Device Dissipation @ T, = 25C Pp 1.2 Watts Derate above 25C 6.85 mw/'c base Operating and Storage Junction Ty Toy -65 to +200 "C 3H yf, 1 Emmter Temperature Range TO-18 ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted) Characteristics | Symbol [| Min [| Max [| Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage ViBRyCEO Vde Ip =10 mAdc, Ip= 0 2N2221, 2N2222 30 2N2221A, 2N2222A 40 Collector-Base Breakdown Voltage Viprycpo Vdc Ip=10 pAde, Ip= 0 2N2221, 2N2222 60 2N2221A, 2N2222A 75 Emitter-Base Breakdown Vo

2N2222; 2N2222A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 29 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING * High current (max. 800 mA) PIN * Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case * Linear amplification and switching. DESCRIPTION 3 handbook, halfpage 1 2 NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A. 2 3 MAM264 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS 60 V - 75 V 2N2222 - 30 V 2N2222A - 40 V - 800 mA Tamb 25 C - 500 mW 75 - 250 - MHz 300 - MHz - 250 ns collector-emitter voltage open base IC collector current (DC) Ptot total power dissipation hFE DC current gain IC = 10 mA; VCE = 10 V fT transition frequency IC = 20 mA;

1722 2N1722A 2N1723 2N1724 2N1724A 2N 1725 2N1889 2N1890 2N 1893 2N1936 2N 1937 2N1973 2N1974 2N1975 2N2060 2N2102 . 2N2102A 2N2150 2N2151 2N2160 2N2192 2N2192A 2N2193 2N2193A 2N2194 2N2194A 2N2217 . 2N2218 2N2218A 2N2219 2N2219A 2N2220 . . 2N2221 2N2221A 2N2222 2N2222A 2N2223 2N2223A 2N2243 2N2243A 2N2270 2N2303 2N2386 2N2386A 2N2387 2N2388 2N2389 2N2390 2N2393 SEC.-PAGE POWER POWER POWER POWER POWER POWER POWER 477 477 4-77 POWER POWER 4-79 4-79 4-79 4-31 4-83 4-83 POWER POWER 4-86 4-88 4-88 4-88 4-88 4-88 4-88 4-93 4-93 4-93 4-93 493 4-93 4-93 4.93 4-93 4-93 4-105 4-105 4-107 4-107 4-112 4-114 4-116 4-116 4-117 4-117 4-119 4-119 4-121 TEXAS INSTRU NCORPORATE POST OFFICE BOX 5012 + DALLA! MENTS $, TEXAS 75222TYPE NUMBER INDEX TYPE NO. 2N2394 2N2395 2N2396 2N2432 2N2432A 2N2453 2N2483 2N2484 2N2497 2N2498 2N2499 2N2500 2N2537 2N2538 2N2539 2N2540 2N2586 2N2604 2N2605 2N2608 2N2609 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2646 2N2647 2N2802 2N2803 2N2804 2N2805 2N2806 2N2807 2N288

2N2222; 2N2222A FEATURES PINNING High current (max. 800 mA) PIN DESCRIPTION e Low voltage (max. 40 V), 1 emitter 2 base APPLICATIONS 3 collector, connected to case Linear amplification and switching. DESCRIPTION 1 3 NPN switching transistor in a TO-18 metal package. 2 PNP complement: 2N2907A. 2 3 MAM264 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Veso collector-base voltage open emitter 2N2222 - 60 Vv 2N2222A - 75 Vv Vceo collector-emitter voltage open base 2N2222 - 30 Vv 2N2222A - 40 Vv le collector current (DC) - 800 mA Prot total power dissipation Tamb S 25 C - 500 mw Nee DC current gain Io = 10 MA; Voge = 10 V 75 - fr transition frequency Ic = 20 MA; Voce = 20 V; f = 100 MHz 2N2222 250 ~ MHz 2N2222A 300 - MHz tot turn-off time loon = 150 MA; Igon = 15 MA; Ipo = -15 MA | - 250 ns 1997 May 29 123Philips Semiconductors Product specification N

2N2222 2N2222A | Unit 2N2222 Ax Collector-Emitter Voltage VcEO 30 40 Vde Collector-Base Voltage VcBo 60 75 Vde 2N2218, A/2N2219,A Emitter-Base Voltage VEBO 5.0 6.0 Vde CASE 79-04 Collector Current Continuous Ic 800 800 mAdc TO-39 (TO-205AD) 2N2218A STYLE 1 3 Conect ss 2N2219,A | 2N2222,4 co - Total Device Dissipation Pp G Fe 2 @ TA = 26C 08 0.4 Watt TPs Base Derate above 25C 4.57 2.28 mw*2N2222,A Derate above 25C 17.1 6.85 mwec CASE 22-03 Operating and Storage Junction Ty. Tstg ~65 to +200 C TO-18 (TO-206AA) emperature Range 3 STYLE 1 THERMAL CHARACTERISTICS ONDDIBA GENERAL PURPOSE Characteristic Symbol | 2N2219,A | 2N2222,A | Unit TRANSISTORS Thermal Resistance, Junction to Ambient | Raja 219 145.8 | CW NPN SILICON Thermal Resistance, Junction to Case Rec 58 437.5 C/W %&2N2219A and 2N2222A are Motorola designated preferred devices. ELECTRICAL CH

2N2222 | 2N2222A | Unit * Collector-Emitter Voltage VcEO 30 40 Vde 2N2222,A Collector-Base Voltage VcBo 60 75 Vde 2N2218, A/2N2219,A Emitter-Base Voltage VEBoO 5.0 6.0 Vdc CASE 79-04 Collector Current Continuous Ic 800 800 mAdc TO-39 (TO-205AD) 2N2218A STYLE 1 Coie 2N2219,A | 2N2222,A = Total Device Dissipation Pp ? a Ty = 25C 0.8 0.4 Watt fase Derate above 25C 4.57 2.28 mwrc 1 pent Total Device Dissipation Pp (a Te = 26C 3.0 1.2 Watts A/2N2222,A Derate above 25C 17.1 6.85 mwerc CASE 22-03 Operating and Storage Junction Ty. Tstg -65 to + 200 oF TO-18 (TO-206AA) Temperature Range 3 STYLE 1 THERMAL CHARACTERISTICS a OND2IBA GENERAL PURPOSE Characteristic Symbol | 2N2219,A | 2N2222,A | Unit TRANSISTORS Thermal Resistance, Junction to Ambient | Raya 219 437.5 C/W NPN SILICON Thermal Resistance, Junction to Case Rac 58 145.8 CW *&2N2219A and 2N2222A ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) are Motorola d

2N2222, 2N2218A, 2N2219A, 2N2221A, 2N2222A N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 7311916, MARCH 1973 DESIGNED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND GENERAL PURPOSE AMPLIFIER APPLICATIONS hfe... Guaranteed from 100 nA to 500 mA e High ft at20 V,20mA... 300 MHz (2N2219A, 2N2222A) 250 MHz (all others) 2N2218, 2N2221 for Complementary Use with 2N2904, 2N2906 e 2N2219, 2N2222 for Complementary Use with 2N2905, 2N2906 *mechanical data Device types 2N2217, 2N2218, 2N2218A, 2N2219, and 2N2219A are in JEDEC TO-5 packages. Device types 2N2220, 2N2221, 2N2221A, 2N2222, and 2N2222A are in JEDEC TO-18 packages. THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE 0 260 0100 = r ool OO a IN 1 1EAp5 2218 px 0780 TEMPERATURE ~ 3 CONLECTOR an Tope SD meas Pont i 0 100 ke =, 0570 v i fe Me gap apes) Pom bp oboe me te = i bone x sty ) pew te Lis Mags { 0700 es we 0.034 > 3100 MIN ee] a qoos 3 MEADS? BASE jas S7 0028 os | aif | x, DETAILS OF

pace Aerospace Aerospace Aerospace 2N2219JANTX 2N2219JANTXV 2N2221 2N2221A 2N2221AJAN Aerospace Aerospace Transistors, Transistors, Aerospace 2N2221AJANTX 2N2221AJANTXV 2N2221JAN 2N2221 JANTX 2N2221 JANTXV Aerospace Aerospace Aerospace Aerospace Aerospace 2N2222 2N2222A 2N2222AJAN 2N2222AJANTX 2N2222AJANTXV Transistors, Transistors, Aerospace Aerospace Aerospace 8-6/13 8-6/13 3-16/19 12-15/15 3-20/8 3-15/29 3-17/6 12-15/22 12-15/23 & Defense 12-15/24 & Defense 12-15/19 & Defense 12-15/20 & Defense 12-15/21 Sm. Signal 3-16/4 Sm. Signal 3-17/11 & Defense 12-15/28 & Defense 12-15/29 & Defense 12-15/30 & Defense 12-15/25 & Defense 12-15/26 & Defense 12-15/27 Sm. Signal Sm. Signal & Defense 3-15/30 3-17/7 12-15/34 & Defense 12-15/35 & Defense 12-15/36 & Defense 12-15/31 & Defense 12-15/32 & Defense 12-15/33 Sm. Signal Sm. Signal & Defense & Defense & Defense 3-16/5 3-17/13 12-15/40 12-15/41 12-15/42 DeviceNo. Page/ltem Family 2N2222JAN <

2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARE CASE TO-18 | CASE TO-92A NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM ie SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY. , THE 2N2222, 2N2222A ARE PACKED IN TO-18. THE PN2222, PN2222A ARE PACKED IN TO-92A. CBE "EBC. 2N2222 . PN2222 2N2222A PN2222A ABSOLUTE MAXIMUM RATINGS 2N2222 2N2222A PN2222 PN2222A Collector-Base Voltage VcBo 60V 75V 60V 75V Collector-Emitter Voltage VCEO 30V 40V 30V 40V Emitter-Base Voltage Vino 5V 6yOBY 6v Collector Current Ic 0.8A 0.8A 0.8A O.8A Total Power Dissipation (Tc $25C) Prot 1.8W 1.6W 1.2W 1.2W (Ta S 25C) 500mW 500mw 500mW 500mW Junction Temperature Tj 175C 175C 150C 150C Storage Temperature Range Tstg -65 to 200C = -55 to 150C ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted) 2N2222

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